SIPNA’S COLLEGE OF ENGINEERING & TECHNOLOGY, AMRAVATI
Department of Computer Science and Engineering.
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Branch: CMPS
Unit Test I
Year/Sem: 2nd year/ IIIrd Sem
Subject: EDC-I
st
Session: 2008-2009 (1 Half)
Syllabus : Unit I,II,III
Question Bank
Q1. Draw and explain full wave rectifier using a smoothing
capacitor with a resistice load and find an expression for
ripple factor across load.
Q2. Explain in brief:
a)cut in voltage
b)Break down voltage
c)Peak Inverse voltage
Q3. The reverse saturation current of a Si PN junction diode is
10 A.Calculate the diode current for the forward bias voltage
Of 0.6V at 25oC.
Q4. Explain the operation of Half Wave rectifier circuit with waveform
and derive the expression for efficiency.
Q5. What is base width modulation?What are the three consequences
of it.
Q6. Compare the various types of transistor configurations.
Q8. Explain the input and output characteristics of a transistor
in CB configuration.
Q9. Explain AI,Av,Ap,Ri,Ro and conversion efficiency.
Q10. What are various methods of transistor biasing?
Explain any one.
Q11. Draw and explain input output characteristics of CE
configuration.
Q12. Give the comparison of rectifiers.
Q13. Prove that the maximum rectification efficiency of full wave
Rectifier is 81.2%
Q14. Draw the complete Volt ampere characteristics of PN junction
Diode.Explain How it depends upon temperature.
Q15. Explain the concept of leakage current IICBO and ICEO.
How they are related to each other.
Q16. Explain the concept of Amplification.
Q17. Determine the bias resistor RB for fixed bias and collector to base
Bias circuit and also compare their stability factor values for both
The circuits.
VCC=12V,RC=330 , IB=0.3mA, = 100,VCEQ=6V.
Q18. What three factors contribute to instability.
Define these three stability factors.
Q19. Draw and explain collector to base bias circuit and state its disadvantages.
Q20. With a neat sketch explain the working of :
a)Center tap full wave rectifier
b)Bridge Full wave rectifier.
Q21. A Ge diode draws 40mA with forward bias of 0.25V.
The junction is at room temperature of 293ok.
Calculate the reverse saturation current of diode.
Q22. A Si diode has a forward voltage drop of 1.1V for forward
DC current of 100mA.It has a reverse current of 1 A for a
Reverse voltage of 10V.Calculate:
a)Bulk and reverse resistance
b)ac resistance at forward current dc current of
i)2.5mA
ii)25mA
Q24. Explain the operation of transistor in details.
Q25. Explain Voltage divider bias method for biasing of transistor.
Derive the expression for collector current.
Q26. Explain the following terms:
a) Temperature dependence of IC ii)Thermal runaway.
Q27. The reverse saturation current of a Si diode is 10 A.
Calculate the diode current for a forward bias voltage of 0.6V
at 25o C
Q28. Draw and explain the characteristics of pn junction diode.
Q30. Explain the concept of diode resistances.
Define and explain static and dynamic resistances.
Q31. In a collector to base bias ckt,
VCC = 12V,RC = 250ohm,IB =0.25mA, = 100 and VCEQ = 8V.
Calculate RB and stability factor.
Q32. Compare CE,CB,CC amplifiers.Also state their application.
Q33. What is need of Bleeder resistance and swinging choke in Filter system.
Q34. Prove that the percentage regulation of FWR using center tap transformer
Is given by:
% regulation = (Rf + Rs/2)/RL
Q35. Differentiate between avalanche and Zener Breakdown.
Q36. What is need of obtaining q point at proper level.
Discuss the graphical analysis to obtain operating point for
Transistor as an amplifier.