HITFET BTS 117
Smart Lowside Power Switch
Features
Product Summary
• Logic Level Input
Drain source voltage
VDS
60
• Input Protection (ESD)
On-state resistance
RDS(on)
100 mΩ
• Thermal Shutdown
Current limit
ID(lim)
7
A
• Overload protection
Nominal load current
ID(ISO)
3.5
A
• Short circuit protection
Clamping energy
EAS
V
1000 mJ
• Overvoltage protection
• Current limitation
• Status feedback with external input resistor
• Analog driving possible
Application
• All kinds of resistive, inductive and capacitive loads in switching or
linear applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS  chip on chip technology. Fully protected by embedded protected functions.
V bb
+
LOAD
M
Drain
2
dv/dt
limitation
1
IN
ESD
Overload
protection
Current
Overvoltage
protection
lim itation
Overtemperature
protection
Short circuit
circuit
Short
protection
protection
Source
HIT F ET
Semiconductor Group
Page 1
3

13.07.1998
BTS 117
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Value
Drain source voltage
VDS
60
Drain source voltage for short circuit protection
Continuous input current 1)
VDS(SC)
32
Unit
V
mA
IIN
-0.2V ≤ VIN ≤ 10V
no limit
| IIN | ≤ 2
VIN < -0.2V or VIN > 10V
Operating temperature
Tj
- 40 ... +150
Storage temperature
Tstg
- 55 ... +150
Power dissipation
Ptot
50
W
EAS
1000
mJ
3000
V
°C
TC = 25 °C
Unclamped single pulse inductive energy
ID(ISO) = 3.5 A
Electrostatic discharge voltage (Human Body Model) VESD
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
Load dump protection VLoadDump2) = VA + VS
V
VLD
VIN=low or high; VA=13.5 V
td = 400 ms, RI = 2 Ω, ID=0,5*3.5A
75
td = 400 ms, RI = 2 Ω, ID= 3.5A
70
DIN humidity category, DIN 40 040
E
IEC climatic category; DIN IEC 68-1
40/150/56
Thermal resistance
junction - case:
R thJC
2.5
junction - ambient:
R thJA
75
R thJA
45
SMD version, device on PCB:
3)
K/W
1A sensor holding current of 500 µA has to be guaranted in the case of thermal shutdown (see also page 3)
2V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for Drain connection. PCB is vertical
without blown air.
Semiconductor Group
Page 2
13.07.1998
BTS 117
Electrical Characteristics
Symbol
Parameter
at Tj=25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
60
-
73
V
-
-
5
µA
1.3
1.7
2.2
V
IIN(1)
-
30
60
µA
Input current - current limitation mode, ID=ID(lim) : IIN(2)
-
120
300
800
2200
4000
Tj = 25 °C
500
-
-
Tj = 150 °C
300
-
-
Characteristics
Drain source clamp voltage
VDS(AZ)
Tj = - 40 ...+ 150°C, ID = 10 mA
Off state drain current
IDSS
VDS = 32 V, Tj = -40...+150 °C, VIN = 0 V
Input threshold voltage
VIN(th)
ID = 0.7 mA
Input current - normal operation, ID <ID(lim) :
VIN = 10 V
VIN = 10 V
Input current - after thermal shutdown, ID =0 A:
IIN(3)
VIN = 10 V
Input holding current after thermal shutdown
On-state resistance
IIN(H)
RDS(on)
mΩ
ID = 3.5 A, VIN = 5 V, Tj = 25 °C
-
90
120
ID = 3.5 A, VIN = 5 V, Tj = 150 °C
-
180
240
On-state resistance
RDS(on)
mΩ
ID = 3.5 A, VIN = 10 V, Tj = 25 °C
-
80
100
ID = 3.5 A, VIN = 10 V, Tj = 150 °C
-
160
200
3.5
-
-
Nominal load current (ISO 10483)
ID(ISO)
A
VIN = 10 V, VDS = 0.5 V, TC = 85 °C
Semiconductor Group
Page 3
13.07.1998
BTS 117
Electrical Characteristics
Parameter
Symbol
at Tj=25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
ID(SCp)
-
25
-
ID(lim)
7
10
15
ton
-
40
70
toff
-
70
150
-dVDS /dton
-
1
3
dVDS/dtoff
-
1
3
150
165
-
Characteristics
Initial peak short circuit current limit
A
VIN = 10 V, VDS = 12 V
Current limit 1)
VIN = 10 V, VDS = 12 V, tm = 350 µs,
Tj = -40...+150 °C
Dynamic Characteristics
Turn-on time
VIN to 90% ID :
µs
RL = 4.7 Ω, VIN = 0 to 10 V, Vbb = 12 V
Turn-off time
VIN to 10% ID :
RL = 4.7 Ω, VIN = 10 to 0 V, Vbb = 12 V
Slew rate on
70 to 50% Vbb:
V/µs
RL = 4.7 Ω, VIN = 0 to 10 V, Vbb = 12 V
Slew rate off
50 to 70% Vbb:
RL = 4.7 Ω, VIN = 10 to 0 V, Vbb = 12 V
Protection Functions
Thermal overload trip temperature
Tjt
Unclamped single pulse inductive energy
EAS
°C
mJ
ID = 3.5 A, Tj = 25 °C, Vbb = 32 V
1000
--
--
ID = 3.5 A, Tj = 150 °C, Vbb = 32 V
225
--
--
-
1
-
Inverse Diode
Inverse diode forward voltage
VSD
V
IF = 5*3.5A, tm = 300 µs, VIN = 0 V
1Device switched on into existing short circuit (see diagram Determination of I
D(lim) . Dependant on the application, these values
might be exceeded for max. 50 µs in case of short circuit occurs while the device is on condition
Semiconductor Group
Page 4
13.07.1998
BTS 117
Package and ordering code
all dimensions in mm
Ordering Code: Q67060-S6500-A2
Ordering code: Q67060-S6500-A3
Semiconductor Group
Page 9
13.07.1998