high-current rtp devices

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HIGH-CURRENT
RTP DEVICES
Reflowable Thermal Protection
For High-Power Automotive
Electronics Design
CIRCUIT PROTECTION /// HIGH-CURRENT RTP DEVICES
HIGH-CURRENT RTP DEVICES
Reflowable Thermal Protection
For High-Power Automotive Electronics Design
The Reflowable Thermal Protection (RTP) device is a low-resistance, robust surfacemountable thermal protector. The High-Current RTP (HCRTP) is specifically geared to
automotive applications where it can help designers comply with AECQ standards. The
HCRTP has a set open temperature and can be installed using reliable, lead (Pb)-free,
Surface Mount Device (SMD) assembly and reflow processes. The device’s high-current
capability of 90A at 23°C helps provide protection against thermal runaway when power
FETs and other components fail in applications such as ABS modules, glow plugs and
engine cooling fans.
The HCRTP device can withstand demanding environmental, life and reliability
requirements – such as shock, vibration, temperature cycling and humidity exposure –
of high-power, high-current automotive applications. In the field, the HCRTP device
opens if its internal junction exceeds the device’s specified open temperature of 210°C.
Temperature increases can have multiple sources, one of which is component failure of
power FETs, capacitors, resistors, triacs, etc. The HCRTP device’s open temperature is
selected so that the device does not open within normal component operating windows,
but does open in the case of a thermal runaway event, and before the melt temperature
of typical lead-free solders.
To simplify installation, improve reliability and optimize thermal coupling with the PCB,
the HCRTP device is surface mountable, which means no special SMD installation is
required. After installation, the HCRTP device utilizes a one-time electronic arming process
to become thermally sensitive. Before the arming procedure, the device can go through
installation temperatures of up to 260°C without opening. After arming, the device will
open when the critical junction exceeds the open temperature. Arming typically occurs at
end of line testing after reflow.
Benefits
• Helps prevent failed components from causing damage in case of a thermal event
• Allows the use of standard surface-mount production methods so that no special
assembly costs are required
• Low power dissipation and voltage drop
• Supports DC electronic circuits
• Suitable for high-power, high-current automotive applications
• Enables green design
Features
• Opens at temperature (210°C) below the critical thermal threshold
• Prior to activation, withstands Pb-free solder reflow processes with peak
temperatures up to 260°C without opening
Applications
• Helps provide protection against thermal runaway for power FETs and other
components if failure occurs in applications such as automotive ABS modules,
glow plugs and engine cooling fans, etc.
• Other DC thermal protection
CIRCUIT PROTECTION /// HIGH-CURRENT RTP DEVICES
PAGE 2
High-Current RTP Devices
Typical Application Block Diagram
Battery
P1
+
RTP
Failed powerFET
or other heat source
PTH
Load 1
–
ARM
Thermal
Coupling
Pin Configuration & Description Pad Layout Recommendations
Pin Description
Pin
Number
Pin
Name
1
P1
2
PTH
3
ARM
Pin Function
Power I/O pin
(Main power current path)
Thermally sensitive power I/O pin Intended to share protected component heat sink
Electronic arming pin
Pin Configuration
(Bottom View of Device)
Pad Dimensions in mm
(Top View – Through Component)
8.200
P1
PTH
P1
PTH
8.088
6.512
3.088
1.512
0.000
0.000
0.800
1.000
Parm
2.000
Parm
Definition Of Terms / Device Block Diagram
Junction
The internal interface which must achieve the “Open Temperature” for
the RTP device to open thermally after arming. This interface (thermal
element) is located directly above the PTH pad.
Open Temp
The device will open when the junction temperature achieves this value.
IARM and RARM
Current and resistance levels measured between the ARM pin and either
the P1 or PTH pin. These values are relevant only pre device arming.
RPP and IPP
Current and resistance levels measured between the P1 and PTH pins.
CIRCUIT PROTECTION /// HIGH-CURRENT RTP DEVICES
IARM
ARM
RARM
P1
Thermal
Protection
Device
Element
IPP
PTH
PAGE 3
High-Current RTP Devices
Method Of Operation – Electronic Arming
The RTP device is a unique thermal protector. It can be reflowed at temperatures up to 260°C without opening, yet in operation it
will open at temperatures well below 260°C. To achieve this functionality, the RTP device uses an electronic arming mechanism.
Electronic arming must be done after reflow, and can be done during final test.
The device is armed by sending a specified arming current through the ARM pin of the device. Arming is a time- & currentdependent event. Arming times vs. current are provided in the “Arming Characteristics” section of this overview. Current can
flow in either direction through the ARM pin.
Prior to arming, RARM should have typical resistance as specified in the “Arming Characteristics” section. Once armed, the ARM
pin will be electrically open relative to the P1 or PTH pins.
Arming has been successful once RARM exceeds the post-arming minimum resistance specified in the “Arming Characteristics”
section. RTP devices must be armed individually and cannot be armed simultaneously in series.
Once “armed”, the RTP device will permanently open when the device junction achieves its specified opening temperature.
Although multiple options exist, below is one simple arming option.
Sample Arming Options
During Test
Current Flow
P1
RTP
ARM pin connected between two test points
PTH PowerFET
ARM
Test
Point 1
Description
PTH  ARM = Arming
Test
Point 2
CIRCUIT PROTECTION /// HIGH-CURRENT RTP DEVICES
In this case, pin P1 is left “floating”, and arming can occur during
test, at a user defined time, by connecting to the Test Points and
applying sufficient current (IARM) between Test Point 1 and Test
Point 2 until the device is armed.
PAGE 4
High-Current RTP Devices
Absolute Max Ratings
Absolute Max Ratings
Max DC Open Voltage (1)
Max DC Interrupt Current
@ 16 VDC
(1)
ESD Rating (Human Body Model)
Max
Units
16
VDC
500
A
25
KV
Max Reflow Temperature (pre-arming)
260
°C
Operating Temperature Limits, Junction (PTH) and Storage
Temperature
-55
+150
°C
Performance Characteristics
Resistance and Open Characteristics
P1 to PTH
RPP (Resistance from P1 to PTH)
Operating Voltage
Open Temperature, post-arming
Installation dependent Operating Current,
post-arming (2)
Moisture Sensitivity Level Rating
(3)
Min
Typ
Max
Units
@ 23+/-3°C
–
100
150
@ 150+/-3°C
–
150
260
-
-
16
-
VDC
IPP = 0
202
210
218
°C
µΩ
@ 23+/-3°C
90
–
–
@ 140+/-3°C
45
–
–
–
–
1
–
–
Min
Typ
Max
Units
A
Arming Characteristics
Arming Characteristics
ARM
Arming Type
Electronically Armed
RARM (Resistance from ARM to P1 or PTH)
Arming Current (IARM) (4)
Arming Time (@23 +/-3°C)
Pre-Arming
–
500
Post-Arming
10
@ 23 +/-3°C
2
@ 2A
@ 5A
–
–
mΩ
–
–
KΩ
–
5
A
–
0.020
–
–
0.005
–
(4)
Sec
Performance capability at these conditions can be influenced by board design.
Performance should be verified in the user’s system.
(1)
Results were obtained on 44.5 x 57.2 x 1.6 (mm) single layer FR4 boards with 70µm (2oz) Cu traces, and a 645mm2, 70µm (2oz) Cu
heat spreader connected to the PTH pad of the RTP device. (See RTP device test board drawing) Results will vary based on user’s
configuration and should be validated by the user in the end system.
(2)
Operating current is measured on the RTP test boards at the specified temperature. It is a highly installation dependent value.
(3)
As per JEDEC J-STD-020C.
(4)
CIRCUIT PROTECTION /// HIGH-CURRENT RTP DEVICES
PAGE 5
High-Current RTP Devices
Typical Electrical Performance Characteristics
Typical Resistance (RPP) vs Temperature
(Passive Testing)
0.2
RTP200HR010SA
Typical Resistance
(RPP) vs Temperature
Typical Resistance
(RPP) vs Temperature
RPP (mOhms)
(Passive Testing)
(Passive Testing)
0.2
0.2
0.1
RPP (mOhms)
RPP (mOhms)
RTP200HR010SA
RTP200HR010SA
0.1
0.1
0.0
-50
0
50
100
150
200
Temperature (°C)
0.0
-50
0.0
0
-50
500
100
150
200
50
100
150
200
INSTALLATION
DEPENDENT
PERFORMANCE CHARACTERISTICS
Temperature (°C)
Temperature (°C)
Note: Results were obtained on 44.4 x 57.2 x 1.6(mm) of 2-sided FR4 board T4350 with 4.0 oz Copper trace.
RTP device pad connection of 283 sq.mm 4.0 oz copper heat spreader to P1 pad and 237 sq.mm 4.0 oz copper heat
Operating Current Vs Temperature
spreader to PTH pad.
(Mounted as described in above notice)
Results will vary based on user’s
1
120 configuration and should be validated by the user in the end system.
RTP200HR010SA
Typical Arming
Time
@23 +/-3˚C
Typical
Arming
Time @23 +/-3˚C
(Mounted as (Mounted
describedas
in described
above notice)
in above notice)
120
80
1
Arming Time (sec)
Operating Current
Vs Temperature
Operating
Current Vs Temperature
(Mounted as (Mounted
describedas
in described
above notice)
in above notice)
Operating Current (A)
120
100
1
20
0
-50
40
20
0
-50
40
0
50
0.1
0.01
100
500
100
50
150
100
200
150
200
0.1
0.01
150
Temperature (°C)
20
0
0
-50
Arming Time (sec)
60
60
0.001
0.01
0.001
200
2.0
3.0
Activation Curren
0.001
2.0
3.0
2.0
Temperature (°C)
Temperature (°C)
3.0
4.0
5.0
4.0
Activation Current
- IARM Current
(A)
Activation
- IARM (A)
Test Board: 44.5 x 57.2 x 1.6 mm, 70µm (2oz) Cu
2X .03 x 45˚
CHAMFER
ONLY ON THIS END
.205 (5.21)
1.250 (31.75)
.175 (4.45)
.100 (2.54)
.210 (5.33)
.335 (8.51)
IP1
.100 (2.54)
1.750
(44.45)
R.063 (R1.59)
IP1
IPTH
IARM
.335 (8.51)
R.088 (R2.22)
HC RTP Test Board
FR4 Cu 4.0 oz
40
80
0.1
RTP200HR010SA
RTP200HR010SA
Arming Time (sec)
60
100
TE CONNECTIVITY
T4350 Rev.3 MAY 2013
80
Operating Current (A)
Operating Current (A)
RTP200HR010SA
RTP200HR010SA
100
Typical Arming Time
(Mounted as described
IPTH
IARM
2.250 (57.15)
PTH pad area = 661mm2, P1 pad area = 393mm2, ARM pad area = 169mm2
CIRCUIT PROTECTION /// HIGH-CURRENT RTP DEVICES
PAGE 6
5.0
High-Current RTP Devices
Mechanical Dimensions
A
B
C
D
E
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
mm
11.35
11.85
3.00
3.70
5.70
6.40
7.90
8.40
1.30
1.60
inch
0.447
0.467
0.118
0.146
0.224
0.252
0.311
0.331
0.051
0.063
B
C
D
A
E
Material Construction
RoHS Compliant
ELV Compliant
Pb-Free
Halogen Free*
Directive 2002/95/EC
Compliant
Directive 2000/53/EC
Compliant
Pb
HF
* Halogen Free refers to: Br≤900ppm, Cl≤900ppm, Br+Cl≤1500ppm.
Recommended Reflow Profile
Reflow Profile
Classification Reflow Profiles
Profile Feature
Pb-Free Assembly
tp
Tp
Critical Zone
TL to Tp
Ramp up
Average Ramp-Up Rate (TsMAX to Tp)
3°C/second max.
TL
• Temperature Min (TsMIN)
150°C
• Temperature Max (TsMAX)
200°C
• Time (tsMIN to tsMAX)
60-180 seconds
Time maintained above:
• Temperature (TL)
217°C
• Time (tL)
60-150 seconds
Peak/Classification Temperature (Tp)
260°C
Temperature
Preheat
tL
TsMAX
TsMIN
ts
Preheat
25
Reflow Profile
Ramp down
t 25°C to Peak
Time
Time within 5°C of actual Peak Temperature
Time (tp)
20-40 seconds
Ramp-Down Rate
6°C/second max.
Time 25°C to Peak Temperature
8 minutes max.
CIRCUIT PROTECTION /// HIGH-CURRENT RTP DEVICES
PAGE 7
High-Current RTP Devices
Load Resistance
Alternate & Multi-FET Schematic Implementations
P1
N-Channel
PowerFET
P1
D
PTH
N-Channel
PowerFET
ARM
RTP
P1
G
D
PTH
D
G
G
D
S
PTH
ARM
G
D
Load 1
Battery
P1
RTP
P1
• Low side N-Channel FET architectures allow only
one FET to be installed per RTP device.
S
• Note: Load may limit “arming” current.
ARM
P1
S
N-Channel
PowerFET
ARM
RTP
PTH
RTP
Solution Considerations
S
S
PTH
ARM
RTP
PTH
D
S
G
ARM
Load 1 Load 1
Load Resistance
Battery Battery
Battery
RTP
Battery Battery
Single FET
Schematic
G
Load 2 Load 2
RTP
P1
G
D
ARM
D
RTP
P1
S
PTH
D
G
S
Load 1
Battery Battery
S
D
PTH
Load 1 Load 1
Load 2
Battery
S
• High Side FET designs allow multiple FETs to be
installed with 1 RTP device while all sharing the
same copper mounting pad (heat sink).
• In the Multi-FET configuration, care must be
taken to assure proper thermal response can be
achieved with each FET.
P1
Multi FET
High Side, N-Channel FET Protection
Low Side, N-Channel
Single FET Protection
Load Resistance
ARM
D
S
G
RTP
TH
Note: The degree of thermal connectivity between the Pheat
source and the RTP device is highly dependent on board layouts, PCB material,
S
G
D
heat sink structures, and relative placement and design of co-located components. It is the responsibility of the user to verify that the
ARM
RTP device provides sufficient protection
in the user’s specific
final device implementation.
G
G
Environmental Specifications
RTP200HR010SA
Test
Conditions
Passive thermal aging
150°C, 1000 hours
Active thermal aging
150°C, 5A bias, 408hr
Passive humidity aging
85°C, 85% RH, 1000 hours
Active humidity aging
85°C, 85% RH, 1000 hours
Storage humidity
Per IPC/JEDEC J-STD020A level 1 (MSL1)
Thermal shock
150°C, -55°C (500 times)
Qualification Testing
The Qualification testing plan for this series of RTP devices is built upon AEC automotive grade testing for ICs (AEC-Q100),
discrete semiconductors (AEC-Q101), and passive components (AEC-Q200), with the intent to demonstrate survivability to the
most stringent of the relevant requirements.
Contact TE Circuit Protection for updated qualification status and detailed procedures.
*A specific list of tests and conditions is available upon request.
CIRCUIT PROTECTION /// HIGH-CURRENT RTP DEVICES
PAGE 8
For More Information
circuitprotection.com/rtp-launch
TE Circuit Protection
308 Constitution Drive
Menlo Park, CA USA 94025-1164
Tel : (800) 227-7040, (650) 361-6900
Fax: (650) 361-4600
www.circuitprotection.com
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1-1773848-6 10/2014
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latest dimensions and design specifications.
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