HIGH-CURRENT RTP DEVICES Reflowable Thermal Protection For High-Power Automotive Electronics Design CIRCUIT PROTECTION /// HIGH-CURRENT RTP DEVICES HIGH-CURRENT RTP DEVICES Reflowable Thermal Protection For High-Power Automotive Electronics Design The Reflowable Thermal Protection (RTP) device is a low-resistance, robust surfacemountable thermal protector. The High-Current RTP (HCRTP) is specifically geared to automotive applications where it can help designers comply with AECQ standards. The HCRTP has a set open temperature and can be installed using reliable, lead (Pb)-free, Surface Mount Device (SMD) assembly and reflow processes. The device’s high-current capability of 90A at 23°C helps provide protection against thermal runaway when power FETs and other components fail in applications such as ABS modules, glow plugs and engine cooling fans. The HCRTP device can withstand demanding environmental, life and reliability requirements – such as shock, vibration, temperature cycling and humidity exposure – of high-power, high-current automotive applications. In the field, the HCRTP device opens if its internal junction exceeds the device’s specified open temperature of 210°C. Temperature increases can have multiple sources, one of which is component failure of power FETs, capacitors, resistors, triacs, etc. The HCRTP device’s open temperature is selected so that the device does not open within normal component operating windows, but does open in the case of a thermal runaway event, and before the melt temperature of typical lead-free solders. To simplify installation, improve reliability and optimize thermal coupling with the PCB, the HCRTP device is surface mountable, which means no special SMD installation is required. After installation, the HCRTP device utilizes a one-time electronic arming process to become thermally sensitive. Before the arming procedure, the device can go through installation temperatures of up to 260°C without opening. After arming, the device will open when the critical junction exceeds the open temperature. Arming typically occurs at end of line testing after reflow. Benefits • Helps prevent failed components from causing damage in case of a thermal event • Allows the use of standard surface-mount production methods so that no special assembly costs are required • Low power dissipation and voltage drop • Supports DC electronic circuits • Suitable for high-power, high-current automotive applications • Enables green design Features • Opens at temperature (210°C) below the critical thermal threshold • Prior to activation, withstands Pb-free solder reflow processes with peak temperatures up to 260°C without opening Applications • Helps provide protection against thermal runaway for power FETs and other components if failure occurs in applications such as automotive ABS modules, glow plugs and engine cooling fans, etc. • Other DC thermal protection CIRCUIT PROTECTION /// HIGH-CURRENT RTP DEVICES PAGE 2 High-Current RTP Devices Typical Application Block Diagram Battery P1 + RTP Failed powerFET or other heat source PTH Load 1 – ARM Thermal Coupling Pin Configuration & Description Pad Layout Recommendations Pin Description Pin Number Pin Name 1 P1 2 PTH 3 ARM Pin Function Power I/O pin (Main power current path) Thermally sensitive power I/O pin Intended to share protected component heat sink Electronic arming pin Pin Configuration (Bottom View of Device) Pad Dimensions in mm (Top View – Through Component) 8.200 P1 PTH P1 PTH 8.088 6.512 3.088 1.512 0.000 0.000 0.800 1.000 Parm 2.000 Parm Definition Of Terms / Device Block Diagram Junction The internal interface which must achieve the “Open Temperature” for the RTP device to open thermally after arming. This interface (thermal element) is located directly above the PTH pad. Open Temp The device will open when the junction temperature achieves this value. IARM and RARM Current and resistance levels measured between the ARM pin and either the P1 or PTH pin. These values are relevant only pre device arming. RPP and IPP Current and resistance levels measured between the P1 and PTH pins. CIRCUIT PROTECTION /// HIGH-CURRENT RTP DEVICES IARM ARM RARM P1 Thermal Protection Device Element IPP PTH PAGE 3 High-Current RTP Devices Method Of Operation – Electronic Arming The RTP device is a unique thermal protector. It can be reflowed at temperatures up to 260°C without opening, yet in operation it will open at temperatures well below 260°C. To achieve this functionality, the RTP device uses an electronic arming mechanism. Electronic arming must be done after reflow, and can be done during final test. The device is armed by sending a specified arming current through the ARM pin of the device. Arming is a time- & currentdependent event. Arming times vs. current are provided in the “Arming Characteristics” section of this overview. Current can flow in either direction through the ARM pin. Prior to arming, RARM should have typical resistance as specified in the “Arming Characteristics” section. Once armed, the ARM pin will be electrically open relative to the P1 or PTH pins. Arming has been successful once RARM exceeds the post-arming minimum resistance specified in the “Arming Characteristics” section. RTP devices must be armed individually and cannot be armed simultaneously in series. Once “armed”, the RTP device will permanently open when the device junction achieves its specified opening temperature. Although multiple options exist, below is one simple arming option. Sample Arming Options During Test Current Flow P1 RTP ARM pin connected between two test points PTH PowerFET ARM Test Point 1 Description PTH ARM = Arming Test Point 2 CIRCUIT PROTECTION /// HIGH-CURRENT RTP DEVICES In this case, pin P1 is left “floating”, and arming can occur during test, at a user defined time, by connecting to the Test Points and applying sufficient current (IARM) between Test Point 1 and Test Point 2 until the device is armed. PAGE 4 High-Current RTP Devices Absolute Max Ratings Absolute Max Ratings Max DC Open Voltage (1) Max DC Interrupt Current @ 16 VDC (1) ESD Rating (Human Body Model) Max Units 16 VDC 500 A 25 KV Max Reflow Temperature (pre-arming) 260 °C Operating Temperature Limits, Junction (PTH) and Storage Temperature -55 +150 °C Performance Characteristics Resistance and Open Characteristics P1 to PTH RPP (Resistance from P1 to PTH) Operating Voltage Open Temperature, post-arming Installation dependent Operating Current, post-arming (2) Moisture Sensitivity Level Rating (3) Min Typ Max Units @ 23+/-3°C – 100 150 @ 150+/-3°C – 150 260 - - 16 - VDC IPP = 0 202 210 218 °C µΩ @ 23+/-3°C 90 – – @ 140+/-3°C 45 – – – – 1 – – Min Typ Max Units A Arming Characteristics Arming Characteristics ARM Arming Type Electronically Armed RARM (Resistance from ARM to P1 or PTH) Arming Current (IARM) (4) Arming Time (@23 +/-3°C) Pre-Arming – 500 Post-Arming 10 @ 23 +/-3°C 2 @ 2A @ 5A – – mΩ – – KΩ – 5 A – 0.020 – – 0.005 – (4) Sec Performance capability at these conditions can be influenced by board design. Performance should be verified in the user’s system. (1) Results were obtained on 44.5 x 57.2 x 1.6 (mm) single layer FR4 boards with 70µm (2oz) Cu traces, and a 645mm2, 70µm (2oz) Cu heat spreader connected to the PTH pad of the RTP device. (See RTP device test board drawing) Results will vary based on user’s configuration and should be validated by the user in the end system. (2) Operating current is measured on the RTP test boards at the specified temperature. It is a highly installation dependent value. (3) As per JEDEC J-STD-020C. (4) CIRCUIT PROTECTION /// HIGH-CURRENT RTP DEVICES PAGE 5 High-Current RTP Devices Typical Electrical Performance Characteristics Typical Resistance (RPP) vs Temperature (Passive Testing) 0.2 RTP200HR010SA Typical Resistance (RPP) vs Temperature Typical Resistance (RPP) vs Temperature RPP (mOhms) (Passive Testing) (Passive Testing) 0.2 0.2 0.1 RPP (mOhms) RPP (mOhms) RTP200HR010SA RTP200HR010SA 0.1 0.1 0.0 -50 0 50 100 150 200 Temperature (°C) 0.0 -50 0.0 0 -50 500 100 150 200 50 100 150 200 INSTALLATION DEPENDENT PERFORMANCE CHARACTERISTICS Temperature (°C) Temperature (°C) Note: Results were obtained on 44.4 x 57.2 x 1.6(mm) of 2-sided FR4 board T4350 with 4.0 oz Copper trace. RTP device pad connection of 283 sq.mm 4.0 oz copper heat spreader to P1 pad and 237 sq.mm 4.0 oz copper heat Operating Current Vs Temperature spreader to PTH pad. (Mounted as described in above notice) Results will vary based on user’s 1 120 configuration and should be validated by the user in the end system. RTP200HR010SA Typical Arming Time @23 +/-3˚C Typical Arming Time @23 +/-3˚C (Mounted as (Mounted describedas in described above notice) in above notice) 120 80 1 Arming Time (sec) Operating Current Vs Temperature Operating Current Vs Temperature (Mounted as (Mounted describedas in described above notice) in above notice) Operating Current (A) 120 100 1 20 0 -50 40 20 0 -50 40 0 50 0.1 0.01 100 500 100 50 150 100 200 150 200 0.1 0.01 150 Temperature (°C) 20 0 0 -50 Arming Time (sec) 60 60 0.001 0.01 0.001 200 2.0 3.0 Activation Curren 0.001 2.0 3.0 2.0 Temperature (°C) Temperature (°C) 3.0 4.0 5.0 4.0 Activation Current - IARM Current (A) Activation - IARM (A) Test Board: 44.5 x 57.2 x 1.6 mm, 70µm (2oz) Cu 2X .03 x 45˚ CHAMFER ONLY ON THIS END .205 (5.21) 1.250 (31.75) .175 (4.45) .100 (2.54) .210 (5.33) .335 (8.51) IP1 .100 (2.54) 1.750 (44.45) R.063 (R1.59) IP1 IPTH IARM .335 (8.51) R.088 (R2.22) HC RTP Test Board FR4 Cu 4.0 oz 40 80 0.1 RTP200HR010SA RTP200HR010SA Arming Time (sec) 60 100 TE CONNECTIVITY T4350 Rev.3 MAY 2013 80 Operating Current (A) Operating Current (A) RTP200HR010SA RTP200HR010SA 100 Typical Arming Time (Mounted as described IPTH IARM 2.250 (57.15) PTH pad area = 661mm2, P1 pad area = 393mm2, ARM pad area = 169mm2 CIRCUIT PROTECTION /// HIGH-CURRENT RTP DEVICES PAGE 6 5.0 High-Current RTP Devices Mechanical Dimensions A B C D E Min Max Min Max Min Max Min Max Min Max mm 11.35 11.85 3.00 3.70 5.70 6.40 7.90 8.40 1.30 1.60 inch 0.447 0.467 0.118 0.146 0.224 0.252 0.311 0.331 0.051 0.063 B C D A E Material Construction RoHS Compliant ELV Compliant Pb-Free Halogen Free* Directive 2002/95/EC Compliant Directive 2000/53/EC Compliant Pb HF * Halogen Free refers to: Br≤900ppm, Cl≤900ppm, Br+Cl≤1500ppm. Recommended Reflow Profile Reflow Profile Classification Reflow Profiles Profile Feature Pb-Free Assembly tp Tp Critical Zone TL to Tp Ramp up Average Ramp-Up Rate (TsMAX to Tp) 3°C/second max. TL • Temperature Min (TsMIN) 150°C • Temperature Max (TsMAX) 200°C • Time (tsMIN to tsMAX) 60-180 seconds Time maintained above: • Temperature (TL) 217°C • Time (tL) 60-150 seconds Peak/Classification Temperature (Tp) 260°C Temperature Preheat tL TsMAX TsMIN ts Preheat 25 Reflow Profile Ramp down t 25°C to Peak Time Time within 5°C of actual Peak Temperature Time (tp) 20-40 seconds Ramp-Down Rate 6°C/second max. Time 25°C to Peak Temperature 8 minutes max. CIRCUIT PROTECTION /// HIGH-CURRENT RTP DEVICES PAGE 7 High-Current RTP Devices Load Resistance Alternate & Multi-FET Schematic Implementations P1 N-Channel PowerFET P1 D PTH N-Channel PowerFET ARM RTP P1 G D PTH D G G D S PTH ARM G D Load 1 Battery P1 RTP P1 • Low side N-Channel FET architectures allow only one FET to be installed per RTP device. S • Note: Load may limit “arming” current. ARM P1 S N-Channel PowerFET ARM RTP PTH RTP Solution Considerations S S PTH ARM RTP PTH D S G ARM Load 1 Load 1 Load Resistance Battery Battery Battery RTP Battery Battery Single FET Schematic G Load 2 Load 2 RTP P1 G D ARM D RTP P1 S PTH D G S Load 1 Battery Battery S D PTH Load 1 Load 1 Load 2 Battery S • High Side FET designs allow multiple FETs to be installed with 1 RTP device while all sharing the same copper mounting pad (heat sink). • In the Multi-FET configuration, care must be taken to assure proper thermal response can be achieved with each FET. P1 Multi FET High Side, N-Channel FET Protection Low Side, N-Channel Single FET Protection Load Resistance ARM D S G RTP TH Note: The degree of thermal connectivity between the Pheat source and the RTP device is highly dependent on board layouts, PCB material, S G D heat sink structures, and relative placement and design of co-located components. It is the responsibility of the user to verify that the ARM RTP device provides sufficient protection in the user’s specific final device implementation. G G Environmental Specifications RTP200HR010SA Test Conditions Passive thermal aging 150°C, 1000 hours Active thermal aging 150°C, 5A bias, 408hr Passive humidity aging 85°C, 85% RH, 1000 hours Active humidity aging 85°C, 85% RH, 1000 hours Storage humidity Per IPC/JEDEC J-STD020A level 1 (MSL1) Thermal shock 150°C, -55°C (500 times) Qualification Testing The Qualification testing plan for this series of RTP devices is built upon AEC automotive grade testing for ICs (AEC-Q100), discrete semiconductors (AEC-Q101), and passive components (AEC-Q200), with the intent to demonstrate survivability to the most stringent of the relevant requirements. Contact TE Circuit Protection for updated qualification status and detailed procedures. *A specific list of tests and conditions is available upon request. CIRCUIT PROTECTION /// HIGH-CURRENT RTP DEVICES PAGE 8 For More Information circuitprotection.com/rtp-launch TE Circuit Protection 308 Constitution Drive Menlo Park, CA USA 94025-1164 Tel : (800) 227-7040, (650) 361-6900 Fax: (650) 361-4600 www.circuitprotection.com www.circuitprotection.com.cn (Chinese) www.te.com/japan/bu/circuitprotection/ (Japanese) Brazil Tel : 55-21-3958-0937 Email: [email protected] UK / Ireland / Benelux / Israel / South Africa / France / Italy / Portugal / Turkey / Greece / Spain Tel : 33-1-34208455 Fax : 33-1-34208479 Email: [email protected] Germany / Austria / Switzerland / Baltic / Eastern Europe / Nordic / Others Tel : 49-89-6089485 Fax : 49-89-6089394 Email: [email protected] Japan Tel : 81-44-844-8194 Fax : 81-44-844-8040 Email: [email protected] Korea Tel : 82-2-3415-4654 Fax : 82-2-3486-1786 Email: [email protected] China, Shenzhen / Guangzhou Tel : 86-755-2515-4780 Fax : 86-755-2598-0419 Email: [email protected] Taiwan Tel : 886-2-2171-5213 Fax: 886-2-8768-1277 Email: [email protected] Thailand / Malaysia / Vietnam Tel : 60-4-810-2112 Mobile: 60-19-472-5628 Fax : 60-4-6433288 Email: [email protected] China, Hong Kong Tel : 852-2738-8181 Fax : 852-2735-0243 Email: [email protected] China, Beijing Tel : 86-21-6106-7597 Fax : 86-21-6485-3255 Email: [email protected] China, Shanghai Tel : 86-21-6106-7379 Fax : 86-21-6485-3255 Email: [email protected] Singapore / Indonesia / Australia / Philippines Tel : 63-2-988-9465 Mobile: 63-918-942-2360 Fax : 63-2-848-0205 Email: [email protected] India Tel : 91-80-4011-5647 Mobile: 91-99-0248-8886 Email: [email protected] te.com © 2014 Tyco Electronics Corporation, a TE Connectivity Ltd. company. All Rights Reserved. 1-1773848-6 10/2014 TE Connectivity, TE connectivity (Logo) and TE (logo) are trademarks. Other logos, product and/or company names might be trademarks of their respective owners. While TE has made every reasonable effort to ensure the accuracy of the information in this brochure, TE does not guarantee that it is error-free, nor does TE make any other representation, warranty or guarantee that the information is accurate, correct, reliable or current. TE reserves the right to make any adjustments to the information contained herein at any time without notice. TE expressly disclaims all implied warranties regarding the information contained herein, including, but not limited to, any implied warranties of merchantability or fitness for a particular purpose. The dimensions in this catalog are for reference purposes only and are subject to change without notice. Specifications are subject to change without notice. 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