IXYS Integrated Circuits Division Announces New 700V Half-Bridge
Gate Driver
with Programmable Dead Time
IX21844 Drives Both High Side and Low Side MOSFETs and IGBTs
Beverly, Massachusetts, USA – January 16, 2014 – IXYS Integrated Circuits Division (ICD), Inc., a
wholly owned subsidiary of IXYS Corporation (NASDAQ: IXYS), announced the immediate availability
of the IX21844 Half Bridge Gate Driver IC. The IX21844 is a high voltage IC that can drive discrete
power MOSFETs and IGBTs that operate up to 600V. Both the high side and low side outputs feature
integrated power DMOS transistors, each capable of sourcing 1.4A and sinking 1.8A of gate drive
current. The IX21844's 700V absolute maximum rating provides additional margin for high voltage
applications.
The IX21844 is manufactured on IXYS ICD's advanced HVIC Silicon on Insulator (SOI) process,
making the IX21844 extremely robust, and virtually immune to negative transients and high dV/dt
noise.
The inputs are 3.3V and 5V logic compatible. Internal under-voltage lockout circuitry for both the high
side and low side outputs does not allow the IX21844 to turn on the discrete power transistors until
there is sufficient gate voltage. A programmable dead time can be set between 400ns and 5µs to
insure that both the high-side and low-side power MOSFET or IGBT are not enabled at the same time.
The output propagation delays are matched for use in high frequency applications.
The IX21844 can drive power discrete MOSFETs and IGBTs in half-bridge, full-bridge, and 3-phase
configurations. Typical applications include motor drives, high voltage inverters, uninterrupted power
supplies (UPS), and DC/DC converters. The IX21844 complements IXYS ICD's extensive low side
gate driver and optically isolated gate driver portfolios, as well as the full range of IXYS power
semiconductors.
The IX21844 is available in production quantities in 14-pin SOIC (IX21844N) and 14-lead DIP
(IX21844G) packages.
IX21844 Data Sheet
About IXYS ICD and IXYS, Inc.
IXYS Integrated Circuits Division, a leader in the design and manufacture of solid state relays and high
voltage integrated circuits, is a wholly owned subsidiary of IXYS Corporation. IXYS Corporation
develops and markets primarily high performance power semiconductor devices that are used in
controlling and converting electrical power efficiently in power systems for the telecommunication and
internet infrastructure, motor drives, medical systems and transportation. IXYS also serves its markets
with a combination of digital and analog integrated circuits, power systems and RF GaAs and GaN
based products. Additional information about IXYS Integrated Circuits Division and IXYS may be found
at www.ixysic.com and www.ixys.com.
Any statements contained in this press release that are not statements of historical fact may be
deemed to be forward looking statements. There are a number of important factors that could cause
the results of IXYS to differ materially from those indicated by these forward looking statements,
including, among others, risks detailed from time to time in the Company's SEC reports, including its
Annual Report on Form 10K for the year ended March 31, 2012 and 2011, and our other filings with
the SEC. The Company undertakes no obligation to publicly release the results of any revisions to
these forward looking statements.