B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Features Applications Voltage range 7 to 28V (42V peak), Limited down to 5V for start-stop systems Sleep mode current 20µA typically QFN package -40°C ... 150°C junction (170°C peak) • General Description • • Microcontroller supply 3.3V or 5V, up to 70mA, >70mA with external boost transistor Adjustable watchdog and reset generation Smart wake-up via BUS interface or KL15 • • Dead time generation (dynamical change) Motor current measurement amplifier • • • Over current switch-off (dynamical change) FET short circuit protections (dynamical change) Configurable voltage monitoring • • • LIN2.x transceiver, compatible down to LIN1.3 PWM interface, bidirectional with error feedback End-of-line high-speed flashing via LIN • • • • Ordering information Product ID Feature Packages E523.01C LIN2.x or PWM interface QFN44L7, QSOP44, QFN48L7 E523.11C PWM interface only see above E523.02C .01C, 2 half-bridges only see above E523.12C .11C, 2 half-bridges only • • • BLDC(EC) motor control , multiple DC motor control Fuel, Hydraulic, Oil and Water pumps Cooling fans, HVAC fans, positioning systems Turbo charger adjustment The IC is a system base chip for driving BLDC and DC motors in B6, full bridge or half bridge applications. The IC ensures a safe, autonomous start-up and wakeup. It is suitable for high temperature applications. An integrated linear regulator supplies an external microcontroller. The supply output current can be "boosted" with an external transistor. For controlling the motor, six power FET gate drivers with dynamically programmable, very precise dead time generation are implemented. Versions driving two half bridges only are available. Measurement functions for motor current, battery voltage and temperature are implemented. The IC has integrated programmable safety functions on motor over current, battery over and under voltage, over temperature and short circuits at all six power FETs. Two product versions with a “state of the art” LIN2.2A or bidirectional PWM interface are available. The LIN interface supports flash mode to upload a new firmware to the microcontroller. see above Typical Application Circuit This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Functional Diagram Figure 1: Functional diagram This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 2 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Pin Configuration Figure 2: QFN44L7 pin configuration, transparent top view, not to scale Figure 3: QFN48L7 pin configuration, transparent top view, not to scale, with >0.6mm distance between VBAT, VBATS, BUS to ground. This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 3 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Figure 4: QSOP44 pin configuration, transparent top view, not to scale Pin Description Table 1: Pin description pin number pin number pin number QFN44L7 QFN48L7 QSOP44 1 1 6 2 2 7 3 3 8 4 4 9 5 5 10 6 6 11 7 8 9 10 11 12 13 14 15 16 17 7 8 9 10 11 12 13 14 15 16 17 12 13 14 15 16 17 18 19 20 21 22 Name Type 1) Description PWMH3 PWMH2 PWMH1 TXD RXD PWML3 D, I D, I D, I D, I D, O D, I PWML2 PWML1 CLK CSB SI SO SCLK VSEL NRES n. c. VIN BUS D, I D, I D, I D, I D, I D, OHiZ D, I D, IO DOd, O A/D, I A, IO High side control signal, half bridge 3 2) high side control signal, half bridge 2 high side control signal, half bridge 1 Bus interface transmit signal Bus interface receive signal Low side control signal, half bridge 3 2), watchdog trigger Low side control signal, half bridge 2 Low side control signal, half bridge 1 Microcontroller clock SPI chip select (low active) SPI data in SPI data out SPI clock VCC voltage selection, interrupt output External microcontroller reset Must not be connected externally Analogue input voltage, emergency shut-off Bus interface (LIN or PWM) This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 4 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 pin number pin number pin number Name QFN44L7 QFN48L7 QSOP44 18 n. c. 18 19 23 BUSGND 20 n. c. 19 21 24 VBATS 22 n. c. 20 23 25 PGND2 21 24 26 S 22 25 27 D3 23 26 28 GH3 24 27 29 M3 25 28 30 GL3 26 29 31 D2 27 30 32 GH2 28 31 33 M2 29 32 34 GL2 31 34 36 GH1 32 35 37 M1 33 36 38 GL1 34 37 39 T 35 38 40 PGND1 36 39 41 VG 40 n. c. 37 41 42 VBAT 42 n. c. 38 43 43 VDD 39 44 4) 44 VCCP 40 44 4) 1 VCC 41 45 42 46 43 47 44 48 Die paddle Die paddle 2 3 4 5 - IP IM IO GND - Type 1) S A, I S A, I S A, O A, I A, O A, S A, O A, I A, O A, O A, I A, O D, I S S S S A, O A, I A, I A, I A, O S S Description Must not be connected externally Bus interface ground Must not be connected externally Motor bridge supply sense Must not be connected externally Power ground KL15 wake-up High side supply, half bridge 3 2) High side gate driver output, half bridge 3 2) Motor phase, half bridge 3 2) Low side gate driver output, half bridge 3 3) High side supply, half bridge 2 High side gate driver output, half bridge 2 Motor phase, half bridge 2 Low side gate driver output, half bridge 2 High side gate driver output, half bridge 1 Motor phase, half bridge 1 Low side gate driver output, half bridge 1 Debug and test mode activation Power ground Power FET gate driver supply voltage Must not be connected externally Main power supply (battery) Must not be connected externally Internal 3.3V voltage regulator VCC regulator driver output Microcontroller - IC interface voltage and feedback for VCC regulator Motor current measurement amplifier Motor current measurement amplifier Motor current measurement amplifier Ground Ground 5) S = supply, A = analogue, D = digital (push-pull), DOd = digital (open drain), I = input, O = output, OHiZ = output (high impedance default) To be connected to GND in 523.02 and 523.12 versions 3) To be left open in 523.02 and 523.12 versions 4) VCC and VCCP internally connected in QFN48L7 package 5) To be connected to ground with optimal thermal coupling 1) 2) Note: GND, BUSGND, PGND1, PGND2 have to be connected externally and with die paddle in shortest way. This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 5 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Figure 5: Pin clamping illustration This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 6 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 1 Absolute Maximum Ratings Stresses beyond these absolute maximum ratings listed below may cause permanent damage to the device. These are stress ratings only; operation of the device at these or any other conditions beyond those listed in the operational sections of this document is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. All voltage with respect to ground. Currents flowing into terminals are positive, those drawn out of a terminal are negative. Table 1.1: Absolute maximum ratings of pin voltages Description Condition VBAT, VBATS, VG, S, GL1-3 voltage t < 500ms BUS voltage t < 500ms M1-3 phase voltage Symbol VVBAT Min -0.3 -24 -27 -3V -0.3V -3V VBUS VM1-3 t < 500ms VIN voltage VVIN |IVIN| < 3mA, series resistance required D1-3 voltage VD1-3 t < 500ms D1-3 to M1-3 voltage VD1-3 - VM1-3 t < 500ms GH1-3 voltage VGH1-3 t < 500ms GL1-3 voltage BUSGND shift to GND VCCP voltage VCC voltage VGL1-3 VBUSGND VVCCP VVCCP 1) TXD, RXD, PWMH1-3, PWML1-3, CLK, IP, IM, CSB, SCLK, SI, SO, VSEL, NRES, T voltage VDD voltage IO voltage Load capacity at pin SO 1) Max 40 42 40 42 VVBATS + 3V 40 42 40 40 Unit V V V V V V V V -0.3 50 52 40 42 VM1-3 - 0.3V VD1-3 + 0.3V 50 52 -0.3V VVG + 0.3V -0.3 0.3 -0.3 8 -0.3 5.5 V V V V V V V V V VIO,VCC -0.3V VVCC + 0.3V - VVDD -0.3 3.6 V VIO,VDD CSO -0.3V - VVDD + 0.3V 1 nF To be connected on PCB Table 1.2: Absolute maximum ratings of pin currents Description GH1-3, GL1-3 current 1) Condition Symbol IO,DRV IGL1-3,sum,on Min -75 -400 -170 Max 75 400 170 Unit mA mA mA IGH1-3,GL1-3,sum,off -340 340 mA IO,VCC -5 5 mA t < 10µs Current sum of all on-switched GL1-3 Current sum of all off-switched GH1-3 and GL1-3 RXD,SO, RESN, IO current This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 7 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 1) Additional limitations due to IC total power dissipation have to be considered Table 1.3: Thermal absolute maximum ratings Description Storage temperature Ambient temperature Condition QFN44L7, QFN48L7 QSOP44 Junction temperature continuous QFN44L7, QFN48L7 QSOP44 Junction temperature life-time profile for QFN44L7 TJ < 110°C and QFN48L7 packages 2) TJ < 130°C TJ < 150°C TJ < 160°C TJ < 170°C Junction temperature life-time profile for QSOP44 TJ < 110°C package 2) TJ < 125°C IC total power dissipation for QFN44L7 and QFN48L7 package 3) IC total power dissipation for QSOP44 package 3) Symbol TS TA Ptot Min -40 -40 -40 -40 -40 1000 + 3000 + 6000 + 1000 + 120 9000 + 1000 - Max 150 150 125 150 125 2.4 4) Unit °C °C °C °C °C h h h h h h h W Ptot - 0.99 4) W TJ tT,J,QFN tT,J,QSOP The maximum junction temperature for special product versions with optional gold-bonding is limited to 150°C. 2) According to various automotive conform medium- and high-temperature profiles, refer to figure below 3) For high ambient temperatures Ptot decreases due to the thermal resistance of the IC package. 4) The maximum IC power dissipation is derived from the thermal resistances of IC and PCB and the temperature difference junction to ambient. The total IC power dissipation is calculated from the sum of: • VCC regulator power dissipation (VVBAT - VVCC) * IVCC • VG regulator power dissipation (VVBAT - VVG) * IVG • FET controller output dissipation at each of the 6 gate outputs (QPFET * fPWM)2 * (10...20)Ω • internal power dissipation VVBAT * 3mA 1) Figure 6: Life time parameter illustration This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 8 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 2 ESD Protection Description Condition Symbol Min Max Unit ESD HBM Protection at all Pins 1) VESD(HBM) -2 2 kV ESD HBM Protection at pin BUS 1) VESD(HBM) -8 8 kV ESD HBM Protection at pin S, VIN 1) VESD(HBM) -4 4 kV ESD CDM Protection at all Pins 2) VESD(CDM) -500 500 V ESD CDM Protection at Corner Pins 2) VESD(CDM)C -750 750 V According to AEC-Q100-002 (HBM) chip level test 2) According to AEC-Q100-011 (CDM) chip level test 1) This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 9 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 3 Recommended Operating Conditions Parameters are guaranteed within the range of recommended operating conditions unless otherwise specified. Positive currents flow into the device pins. The first electrical potential connected to the IC must be GND. Table 3.1: Recommended operating conditions Parameter Junction temperature VBAT voltage VBAT voltage at cold crank (wake-up functionality limited) Condition continuous Symbol Min Typ Max Unit TJ VVBAT -40 7 1) 6.7 1) 13 - 150 28 - °C V V 5.3 1) 5 1) - - V V 7 5 0 0 0 0.8 0 13 - 28 70 0.2 1 1.5 V V V mA VVCC VVCC V If VCC 5V mode: -IVCC < 10mA VCC 3.3V mode only VCC 3.3V mode only, -IVCC < 10mA VBATS voltage VBATS voltage at cold crank (short circuit protection limited) VVBATS VCC load current TXD, PWMH1-3, PWML1-3, CLK, CSB, SCLK, SI, VSEL -IVCCP VDI,VCC L level H level IP, IM voltage VAI For QFN44L7 and QSOP44 packages only: If a VCC boost transistor is used, the minimal needed VBAT voltage is increased by the individual basis-emitter voltage of the external boost-transistor (VBE,boost,VCC). 2) Refer to VCC regulator parameter specification, complete functionality not tested in production 1) Figure 7: VBAT recommended operating condition functional overview (not to scale) This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 10 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Table 3.2: SPI and CLK input clock recommended operating conditions Parameter Condition Symbol SPI frequency fSCLK Min - Typ - Max 4 Unit MHz SPI data setup time tspi,ds 62 - - ns SPI data hold time tspi,dh 62 - - ns SPI clock setup time tspi,cs 62 - - ns SPI clock hold time tspi,ch 62 - - ns SPI access gap CLK input clock frequency CLK input clock time low CLK input clock time high tspi,gap fCLK tCLK,L tCLK,H 3 4 15 15 - 32 - µs MHz ns ns 1) Multiple of 4MHz, 5MHz or 6MHz required This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 11 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 4 Electrical Characteristics VVBAT = 5V to 28V, for LIN parameters 7V to 18V, TA = -40°C to +150°C (reduced to -40°C to 125°C for QSOP44 packages), unless otherwise noted. Typical values are at VVBAT = 12.0V and TA = +25°C. Positive currents flow into the device pins. 4.1 Power Supply and Management Table 4.1: Thermal parameters Parameter Thermal resistance junction to case 2) Thermal resistance junction to ambient 1) Based on simulation 2) Not tested in production 2) Condition QFN44L7, QFN48L7 QSOP44 Table 4.2: Current consumption parameters Parameter Condition Current consumption in sleep mode TA < 50°C, VVBAT = VVBATS = 12V Current consumption in run mode, Modulated motor, power FET gate switching and microcon- fPWM = 25kHz troller current consumption not included Min - Typ 65 Max 5 1) - Unit K/W K/W Symbol (IVBAT + IVBATS)SLEEP Min - Typ 14 Max 50 Unit µA (IVBAT + IVBATS)ACT - 5 10 mA Min 1.7 - Typ 3.4 - Max 5 6 Unit V V tWU,up - 5 0.25 50 10 µs ms Ipd,S td,sleep 2 43 10 - 20 - µA µs Symbol VVCC3 Min 3.2 Typ 3.3 Max 3.4 Unit V VVCC5 4.85 5.0 5.15 V IVCC,lim -160 -120 -80 mA Table 4.3: Wake-up and shut-down parameters Parameter Condition S (KL15) threshold voltage VVBAT > 7V VBAT wake-up threshold during power-up (BUS = 'H' or S = 'H') S (KL15) filter delay VVBAT > 7V Over all wake-up delay until controller is Typical buffer capareleased (VG not available) cities S pull down current VS > 1.7 Delay time for entering sleep mode SLEEPCTRL[1] = 1 Table 4.4: VCC microcontroller supply parameters Parameter Condition VCC regulator output voltage 3.3V mode VVSEL = 'L', VVBAT > 5.3V, -IVCC < 70mA VVSEL = 'L', VVBAT > 5.0V, -IVCC < 10mA 1) VCC regulator output voltage 5V mode VVSEL = 'H', VVBAT > 7V, -IVCC < 70mA VVSEL = 'H', VVBAT > 6.7V, -IVCC < 10mA 1) VCC current limitation 1) Symbol Rth,J-C,QFN Rth,J-A,QSOP44 Symbol Vth,S VVBAT,wake,start-up td,S Not tested in production This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 12 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Table 4.5: Reset parameters Parameter VCC reset threshold 3.3V mode VCC reset threshold 5V mode Condition Rising Falling Hysteresis Rising Falling Hysteresis Symbol VVCC3,UV Table 4.6: Power FET gate voltage supply electrical parameters Parameter Condition VG regulator output voltage VVBAT >12V , -IVG < 35mA VG regulator output voltage at low VBAT 5.5V < VVBAT < 12V, -IVG < 35mA 5V < VVBAT < 5.5V, -IVG < 35mA VG current limitation Table 4.8: Digital pin parameters Parameter VSEL, CSB, SCLK, SI, CLK, TXD, PWMH1-3, PWML1-3 input threshold CSB, TXD pull-up current SCLK, SI, CLK, PWMH1-3, PWML1-3 pull-down current VSEL pull down current T input threshold Typ 2.85 2.75 0.1 4.35 4.25 0.1 6 Max 3.0 2.9 4.5 4.4 10 Unit V V V V V V µs Symbol VVG Min 11 Typ 12 Max 13 Unit V VVG,LV - 13V - - 13V - IVG,lim VVBAT 0.6V VVBAT 0.7V -110 -80 -35 mA Symbol VVDD fOSC Min 3.0 0.9 Typ 3.3 1 Max 3.6 1.1 Unit V MHz Min 0.22 0.21 0.01 - Typ 0.1 -50 50 Max 0.79 0.78 - Unit VVCC VVCC VVCC µA µA 10 0.85 10 0 0.82 -5 0 50 0.79 50 0.18 1 5 µA VVDD V µA VVCC VVCC µA 0.21 - 0.78 VVDD 0.22 - 0.79 VVDD VVCC5,UV VCC reset detection time Table 4.7: Internal supply parameters Parameter Internal supply VDD voltage Internal oscillator td,VCC,UV Min 2.7 2.6 0.05 4.15 4.05 0.05 2 Condition IVDD = 0A Condition Rising Falling Hysteresis Symbol Vth,i IPU IPD IVSEL,pd Vth,T Rising Falling T pull-down current SO, VSEL, RXD, NRES output voltage SO, VSEL, RXD output voltage SO, NRES output leakage Io < 1mA, 'L' level -Io < 1mA, 'H' level IT,pd Vo,LOW Vo,HIGH Io,leak VIN input threshold SECURCTRL[3] = 1 Vth,VIN VIN input hysteresis SECURCTRL[3] = 1 Vi,VIN,HYST 0.01 0.1 - VVDD VIN pull-down resistance 1) SECURCTRL[3] = 1 RPD,VIN - 125k - Ω 1) Not tested in production This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 13 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 4.2 Power FET Gate Driver Table 4.9: Power FET gate driver electrical parameters Parameter Condition On-resistance of high and low side drivers Switched on Switched off Current consumption of high side drivers Switched on Switched off Switch delay from input control signal to gate driver output BRIDGEMODE[6] =0 Symbol ron,G 1) Isup,D1-3 td,DRV BRIDGEMODE[6] =1 Emergency shut-off debounce time 1) 2) SECURCTRL[3] = 1 Max 20 10 300 150 Unit Ω Ω µA µA tsyn + tsyn + 300ns 2) 800ns 2) - 0 300 800 ns - 50 - μs Symbol Vth,SC,min Min 0.345 Typ 0.413 Max 0.486 Unit V Vth,SC,max 3 3.3 3.6 V SCTH[2:0] = 5, VVBAT > 5V, VVBATS > 5V 1.62 2.48 3.46 V SCTH[2:0] = 2, VVBAT > 5V, VVBATS > 3V SCTH_xS = 1 0.54 0.83 1.15 V Vth,SC,HRES,min 0 26 52 mV Vth,SC,HRES,max 3 3.3 3.6 V td,SC tMT,SC,max 12.6 3 14 15.4 µs μs Symbol Voffset,in Min -3 Typ 0 Max 3 Unit mV Ileak,in ERRA -3.5 -5 - 0 0 1 3.5 5 - mV µA % Minimum short circuit threshold in high resolution mode 1) Maximum short circuit threshold in high SCTH_xS = 127 resolution mode 1) Short circuit detection filter time 2) Maximum short circuit masking time (10% SCTH[6:4] = 7 accuracy) 2) tsyn 2) Typ 8 4 100 50 rGH1-3on, rGH1-3off,M, rGH1-3off, rGL1-3on, rGL1-3off Synchronizing time: tsyn = (4...5) * TCLK,dead Table 4.10: Power FET short circuit parameters Parameter Condition Minimum short circuit threshold in low res- SCTH[2:0] = 0 olution mode 1) Maximum short circuit threshold in low SCTH[2:0] = 7, resolution mode 1) VVBAT > 7V, VVBATS > 7V 1) tVIN,deb Min - High side and low side FETs Not tested in production 4.3 Measurement Functions Table 4.11: Motor current measurement amplifier parameters Parameter Condition Input offset VIP < 1.5V, TJ < 85°C VIP < 1.5V Input leakage current Current amplification error A = 100, VIM < 1.5V This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 14 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Parameter Output resistance Condition |IIO| < 2mA Table 4.12: Internal analogue signal measurement parameters Parameter Condition VBAT measurement divisor VG measurement divisor VIN measurement tolerance 0.3V < VVIN < 2V GL1-3 measurement tolerance 0.3V < VGL1-3 < 2V Temperature measurement tolerance 1) TJ > 125°C 1) Symbol rIO Min - Typ - Max 100 Unit Ω Symbol RDVBAT RDVG VERR,VIN VERR,GL1-3 Terr,HT Min 11.5 4.5 -10 -100 -11 Typ 12 5 0 0 0 Max 12.5 5.5 10 100 11 Unit mV mV K Symbol VVBAT,OV Min 29 28 0.5 50 Typ 30 29 1 70 Max 31 30 100 Unit V V V µs Min 13 12 0.5 6.0 5.8 0.1 5.0 4.8 0.1 50 Typ 14 13 1 6.4 6.2 0.2 5.4 5.2 0.2 70 Max 15 14 6.8 6.6 5.8 5.6 100 Unit V V V V V V V V V µs F31 Min -20 0 0.45 -3 Typ 0 0 8 / 64 0.5 55 / 64 63 / 64 0 Max 20 0.55 1 3 ta,OC 5 13 20 Unit mV VVDD VVDD VVDD VVDD VVDD %/ VVDD μs Not tested in production 4.4 Monitoring and Safety Table 4.13: VBAT over voltage parameters Parameter Condition VBAT over voltage threshold Rising Falling Hysteresis VBAT over voltage detection time td,VBAT,OV Table 4.14: VG over and under voltage parameters Parameter Condition VG over voltage threshold Rising Falling Hysteresis VG under voltage threshold for VVBAT,min > Rising 7V (SAFECTRL[5] = 0) Falling Hysteresis VG under voltage threshold for VVBAT,min > Rising 6V (SAFECTRL[5] = 1) Falling Hysteresis VG over and under voltage detection time Symbol VVG,OV VVG,UV VVG,UV,6V td,VG Table 4.15: Motor over current parameters Parameter Condition Motor over current comparator offset 1V < VIO < 2.7V Motor over current reference IOCOMPTHR = 0 IOCOMPTHR = 8 IOCOMPTHR = 32 IOCOMPTHR = 55 IOCOMPTHR = 63 Motor over current accuracy after calibra- 1) tion by microcontroller with external ADC Motor over current detection time 1) Symbol Voffset,IO VDAC,OC Calibration done at IOCOMPTHR = 8 and IOCOMPTHR = 55, measured at IOCOMPTHR = 32 This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 15 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Table 4.16: Over temperature parameters Parameter Condition Over temperature threshold Rising Falling Hysteresis Over temperature detection time 1) Symbol Totemp td,otemp Min 170 150 5 50 Typ 15 70 Max 200 100 Unit o C o C °C μs Min 230 5.4 115 57 28 14 2 200 Typ 256 8 128 64 32 16 4 400 Max 282 8.8 143 73 38 20 10 1000 Unit ms ms ms ms ms ms μs µs Production test is based on calculation Table 4.17: Watchdog parameters Parameter Condition Register watchdog first open window time Register watchdog closed window time WDCTRL[7] = 1 Register watchdog open window time WDCTRL[5:4] = 3 WDCTRL[5:4] = 2 WDCTRL[5:4] = 1 WDCTRL[5:4] = 0 CLK watchdog detection time Watchdog reset activation duration Symbol WDT,FOW WDT,CW WDT,OW WDT,d,CLK WDT,RES 4.5 Communication Interfaces Table 4.18: General BUS interface parameters Parameter Condition Symbol Min Typ Max Unit BUS dominant output voltage VBUS,DOM - 0.7 1.2 V BUS receiver dominant level VBUS,DOM - - 0.4 VVBAT BUS receiver recessive level VBUS,REC 0.6 - - VVBAT BUS receiver hysteresis VBUS,HYS 0.02 0.05 0.2 VVBAT IBUS,LIMIT 20 - 300 mA RBUS,SLAVE 10 40 100 kΩ tBUS,WU tBUS,LOW 70 3 9 150 12 μs ms Table 4.19: LIN specific DC parameters (523.01 and 523.02 only) Parameter Condition LIN conform functional range VBAT Recessive output voltage TXD = 'H' Symbol VLIN,VBAT VLIN,REC Typ - Max 18 VVBAT Unit V - Dominant output voltage VLIN,DOM Min 7 VVBAT -1V - 0.7 1.2 V VLIN,DOM1 - 1.1 2 V VLIN,DOM VLIN,REC 0.6 - 0.4 - VVBAT VVBAT TXD = 'L', VVBAT > 5V, RLIN = 1.3kΩ 1) 1) BUS output current limitation BUS pull-up resistance 1) BUS wake-up debounce time BUS dominant clamping time-out 1) 1) IOCFG[7] = 1 External resistor to VBAT Not tested in production Dominant output voltage TXD = 'L', VVBAT = 7.0V, RLIN = 500Ω 1) TXD = 'L', VVBAT = 18V, RLIN = 500Ω 1) Receiver dominant level Receiver recessive level This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 16 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Parameter LIN bus centre voltage Receiver hysteresis Output current limitation Pull-up resistance Leakage current (driver off) Leakage current flowing into pin BUS Pull-up current flowing out of pin BUS Leakage current, ground disconnected (GND = VBAT) Leakage current, supply disconnected Leakage current, supply disconnected Clamping voltage Input capacitance 2) 1) 2) Condition VLIN,BUSCNT = (VLIN,THDOM + VLIN,THREC) / 2 VLIN,THREC - VLIN,THDOM VLIN > 2.5V Symbol VLIN,BUSCNT Min 0.475 Typ - Max 0.525 Unit VVBAT VLIN,HYS ILIN,LIMIT RLIN,SLAVE 0.03 40 30 0.05 40 VLIN = 12V, VVBAT = 9V ... 12V, TJ < 50°C transmitter passive, 7V < VVBAT < 18V, 7V < VLIN < 18V, VLIN > VVBAT, TJ < 125°C transmitter passive, 7V < VVBAT < 18V, VLIN = 0V VVBAT = 13.5V, 0V < VLIN < 18V VLIN = 12V, VVBAT = 0V, TJ < 50°C VVBAT = 0V, 0V < VLIN < 18V TJ < 125°C VVBAT = 0V, ILIN = 1mA 7V < VVBAT < 18V IBUS_PAS_rec50 6 - VVBAT mA kΩ μA ILIN,BUSREC - 0.175 200 60 12 20 μA ILIN,BUSDOM -1 - - mA ILIN,NOGND -1 - 0.1 mA IBUS,50 - 1 2 μA ILIN - - 20 μA VLIN,CLAMP CLIN,PIN 40 - - 30 V pF Min 1 Typ - Max 3 Unit V/μs 0.5 - 3 V/μs tLIN,SYM tTXD,PDT tTXD,SYM tRXD,PDR tRXD,SYM tLIN,DB DLIN,1 -5 -2 -2 0.3 0.396 - 5 4 2 6 2 6 - μs μs μs μs μs μs - DLIN,2 - - 0.581 - DLIN,3 0.417 - - - External resistor to VBAT Not tested in production Table 4.20: LIN specific AC parameters (523.01 and 523.02 only) Parameter Condition Output slew rate 1) CLIN = 1nF ... 10nF, RLIN = 500Ω ... 1kΩ, 1μs < tLIN < 5μs, VVBAT = 18V CLIN = 1-10nF, RLIN = 500Ω ... 1kΩ, 1μs < tLIN < 5μs, VVBAT = 7V Symmetry of rising and falling edge 1) VVBAT = 18V 1) Transmit propagation delay Transmit propagation delay symmetry 1) Receiver propagation delay Receiver propagation delay symmetry Receiver debounce time Duty cycle VLIN,THREC,max = 0.744 * VVBAT, VLIN,THDOM,max = 0.581 * VVBAT, VVBAT = 7V ... 18V, tBIT = 50µs, DLIN,1 = tBUSREC,min / 2 / tBIT VLIN,THREC,min = 0.422 * VVBAT, VLIN,THDOM,min = 0.284 * VVBAT, VVBAT = 7V ... 18V, tBIT = 50µs, DLIN,2 = tBUSREC,max / 2 / tBIT V,LIN,THREC,max = 0.778 * VVBAT, VLIN,THDOM,max = 0.616 * VVBAT, Symbol SRLIN,OUT This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 17 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Parameter 1) Condition VVBAT = 7V ... 18V, tBIT = 96µs, DLIN,3 = tBUSREC,min / 2 / tBIT VLIN,THREC,min = 0.389 * VVBAT, VLIN,THDOM,min = 0.251 * VVBAT, VVBAT = 7V ... 18V, tBIT = 96µs, DLIN,4 = tBUSREC,max / 2 / tBIT Symbol Min Typ Max Unit DLIN,4 - - 0.590 - These parameters are a documentation of LIN1.3 specification only and not valid for this product (refer to section LIN Compatibility). Table 4.21: Firmware upload via LIN (flash mode) parameters (523.01 and 523.02 only) Parameter Condition Symbol Min LIN flash mode receive data baud rate 1) VVBAT=13V BLIN,RXD 1) LIN flash mode transmit data baud rate VVBAT=13V BLIN,TXD 1) Typ 115 250 Max - Unit kBd kBd Not tested in production This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 18 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 5 Typical Operating Characteristics 30 22 25 20 I(VBAT) + I(VBATS) / µA (I(VBAT) + I(VBATS)) / µA Sleep Mode Current vs. VBAT T = 50°C, V(VBAT) = V(VBATS) 20 15 10 5 18 16 14 12 10 8 0 0 5 10 15 20 25 30 35 -40 40 V(VBAT) / V -20 0 20 40 60 80 Temp. / °C V(VG) vs. V(VBAT) I(VG) = 10mA 14 5.5 12 V(VCC) / V 10 V(VG) / V Supply Mode Current vs. Temperature V(VBAT) = 13.5V 8 6 4 2 V(VCC) vs. V(VBAT) I(VCC) = -20mA 5.0 4.5 4.5 4.0 4.0 3.5 3.5 3.0 3.0 2.5 2.5 2.0 2.0 1.5 1.5 1.0 1.0 0.5 0.5 0.0 0 0 5 10 15 20 25 30 5.5 5.0 0.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 35 V(VBAT) / V V(VBAT) / V This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 19 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 V(VCC) vs. V(VBAT) 3,3V mode, I(VCC) = -20mA 3.31 V(VCC) vs. V(VBAT) 5V mode. I(VCC) = -20mA 5.05 5.04 3.30 5.03 5.02 5.01 V(VCC) / V V(VCC) / V 3.29 3.28 3.27 5.00 4.99 4.98 4.97 3.26 4.96 4.95 3.25 0 5 10 15 20 25 30 35 0 40 10 15 20 25 30 35 40 V(VBAT) / V V(VBAT) / V 1.60 5 V(VTEMP) vs. Temperature V(VBAT) = 13.5V 1.50 V(VTEMP) / V 1.40 1.30 1.20 1.10 1.00 0.90 0.80 0.70 -40 -20 0 20 40 60 80 100120140160180 Junction temp. / °C This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 20 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 6 Detailed functional description The IC is a system base chip including: Section 6.1: ● Power supply management ● Microcontroller supply with reset generation ● Power FET gate driver supply ● Sleep mode and wake-up functionality Section 6.2: ● Initial IC configuration for the customer application Section 6.3: ● B6 bridge power FET gate driver ● Dead time generation ● Power FET short circuit protection, drain-source monitoring Section 6.4: ● Motor current measurement ● Advanced analogue signal measurement Section 6.5: ● Monitoring and protection against failure effects ● Watchdog ● Interrupt Section 6.6: ● LIN or PWM interface ● SPI interface A dedicated functionality at VIN pin can be used to fulfil functional safety requirements. This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 21 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 6.1 Power Supply and Management The power supply contains: ● VCC linear voltage regulator for external microcontroller supply (3.3V or 5V, 70mA) ● VG linear voltage regulator for power FET switching (12V, 35mA) ● Power-on reset and microcontroller reset generation ● Power-up, sleep mode and wake-up sequencing Figure 8: Power supply block diagram Table 6.1: Register VREGCTRL (0x07), VCC and VG supply control MSB LSB Content - - - - VCC_SON VSEL VGON VCCON Reset value 0 0 0 0 0 0 0 1 Internal access - - - - R R R R External access R R R R R/W R/W R/W R/W Bit Description VCC_SON: 1: VCC is connected to VDD in sleep mode internally, if VSEL = 'L' 0: VCC is off in sleep mode VSEL: 1: µC supply VCC is 5V, 0: µC supply VCC is 3.3V VGON: 1: Enable VG supply VCCON: 1: Enable VCC supply 6.1.1 VCC Microcontroller Supply The VCC regulator is a linear NMOS regulator with current limitation. The level at VSEL pin sets the microcontroller supply voltage to 3.3V or 5V. The voltage selection has to be confirmed by setting VSEL bit in VREGCTRL register accordingly. This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 22 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Figure 9: VCC regulator block diagram, case microcontroller supply is 3.3V, VREGCTRL[2] to be set to 0 Figure 10: VCC regulator block diagram, case microcontroller supply is 5V, VREGCTRL[2] to be set to 1 To increase the available output current or to reduce power dissipation within the IC to allow higher ambient temperatures, an external NPN bipolar boost transistor may be inserted. This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 23 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Figure 11: VCC block diagram, case external VCC boost transistor Security warning: If using an external boost transistor an external current limitation must be inserted. Figure 12: Proposal of short circuit protection at microcontroller supply, when using an external boost transistor Note: The stability of the implemented circuitry has to be ensured by the customer. In sleep mode, the VCC regulator is switched off. If setting VCC_SON bit in VREGCTRL register, VCC pin is connected to the internal 3.3V supply VDD (VCC in 3.3V mode only). Then the output current is limited to 300µA. An overload leads to IC and microcontroller reset and restart. Note: If VCC is enabled in sleep mode, all input pins should have pull resistances externally to avoid increased current consumption. This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 24 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 6.1.2 Power FET Gate Voltage Supply VG The VG regulator is used to: ● supply the low side gate drivers ● charge the bootstrap capacitors via external bootstrap diodes. The VG regulator is a linear low drop PMOS regulator with current limitation. The output is safe against reverse currents. So in case of battery voltage drops, the regulator output voltage can be higher than battery voltage. The storage capacitor does not discharge against battery. Figure 13: VG regulator block diagram The chip internal divided VG voltage can be switched to AOUT by setting AMUX register via SPI. 6.1.3 Internal Supply VDD A linear 3.3V voltage regulator with current limitation supplies the internal digital and analogue components of the IC. External loads at VDD pin are not allowed. 6.1.4 Reset The internal supply VDD and the microcontroller supply VCC are monitored by the IC. After power-up or in case of low voltage at VCC or VDD, the IC is reset and the signal at NRES pin for the external microcontroller is set to L. The reset is set to H, if VDD and VCC is powered up successfully. NRES pin is an open drain output. Note: The VCC regulator is switched off, when NRES is 'L'. 6.1.5 IC State Control The IC is clocked by an integrated oscillator with f OSC frequency. This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 25 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Figure 14: IC states diagram Table 6.2: IC states description POR (Deep-) Sleep Power-up Initial configuration Run Internal supply on on on on on Oscillator off off on on on VCC supply off off on on on 2) VG supply off off off off on 2) Power FET gate driver disabled 1) disabled 1) disabled 1) disabled 1) enabled 2) Monitoring off off on on on Measurement off off off off on 1) High side and low side power FETs switched off 2) Depending on configuration 6.1.5.1 Power Up After applying battery voltage, the IC ensures a save power-up of microcontroller and B6 bridge. All high side and low side driver outputs are off (clamped to ground or to motor phase) to prevent the external B6 bridge from cross current. Sleep mode activation after power-up is level sensitive to S pin. If S pin is low, the IC enters sleep mode. If S pin is 'H', the IC is in active mode. This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 26 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Figure 15: Power up timing diagram, typical scenario with S = 'H' Figure 16: Power up timing diagram, typical scenario with S = 'L' This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 27 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 6.1.5.2 Shut-down and Sleep Mode Sleep mode (deep-sleep mode) is entered via SPI command written to SLEEPCTRL register. In sleep mode, all registers are cleared except the IRQSTAT1 and IRQSTAT2 interrupt status registers. All regulators and monitoring are off except VDD and power-on reset (POR) generation. Table 6.3: Register SLEEPCTRL (0x03) 1), sleep mode control MSB LSB Content - - - - - - DELAYSLE SLEEP EP Reset value 0 0 0 0 0 0 0 0 Internal access - - - - - - R/W R/W External access R R R R R R W W Bit Description DELAYSLEEP: Goto sleep after td,sleep SLEEP: Enter sleep mode 1) Bits in register are self-clearing Figure 17: Shut-down timing diagram This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 28 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 6.1.5.3 Wake Up Wake-up from sleep mode can be done by two independent wake-up sources: ● BUS pin: A falling edge at BUS pin followed by a dominant bus level maintained for a time period t BUS,WU results in a remote wake up request. If BUSWAKEEDGE bit in CHIPCTRL register is 0, the IC wakes up immediately. Else the IC wakes up at the next rising edge at BUS pin. ● S pin: A rising edge or high level at S pin wakes up the IC. The sensitivity can be configured by SSENS bit in CHIPCTRL register. Figure 18: Wake up via S pin, typical scenario Warning: Wake-up from sleep mode via S pin with SSENS = 0 requires a rising edge at S pin after writing the SPI sleep command. In several applications it cannot be ensured under all circumstances. Then wake-up events may not be recognized and the system remains in sleep mode (dead lock). To avoid this situation, SSENS bit in CHIPCTRL register has to be set to 1. This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 29 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Table 6.4: Register CHIPCTRL (0x02), wake-up configuration MSB LSB Content - - - - - SSENS BUSWAKEEDGE BUSWAKEEN Reset value 0 0 0 0 0 0 1 1 Internal access - - - - - R R R External access R R R R R R/W R/W R/W Bit Description SSENS: 1: Wake up at S is level sensitive (high level leads to wake up), 0: Wake up at S is edge sensitive (rising edge) BUSWAKEEDGE: 1: BUS wake up at rising edge, 0: BUS wake up at falling edge BUSWAKEEN: BUS wake up enable Figure 19: Wake-up via BUS pin, typical scenario with BUSWAKEEDGE = 1 This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 30 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Figure 20: Wake-up via BUS pin, typical scenario with BUSWAKEEDGE = 0 6.1.6 Board Level Protection VBAT (VBATS), S and GND must be protected against reverse polarity and ISO pulses on PCB level. Table 6.5: Reverse polarity protection concepts PCB Terminal Reverse Polarity Protection Device PCB Circuitry Description Battery (high side) NMOS transistor Charge pump Battery (high side) Diode Diode Increases the minimum battery voltage Ground (low side) NMOS transistor - VG regulator output can be used to drive the gate of the reverse polarity protection transistor. Note: For LIN applications, a low side reverse polarity protection is not possible due to EMC requirements. At VBAT (VBATS) filtering is necessary to prevent the IC from malfunction and destruction caused by EME and EMI. This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 31 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 6.2 Initial Configuration and Security Some registers of the IC are only writeable within the initial configuration state (refer to restricted register table). After power-up or wake-up an initial IC configuration via SPI needs to be done. The initial configuration: ● starts with the writing of CLKCTRL clock divider register. Before writing CLKCTRL register, any writing of restricted registers is ignored. ● ends with setting ESECURE bit in SECURCTRL register. Once ESECURE bit is set, any writing of restricted registers is ignored. The ESECURE bit can only be set, if all other bits in SECURCTRL register are left unchanged. So the register has to be written twice, if special IC features want to be selected. Example 1: SECURCTRL = 0x01, only 1 SPI access to the register necessary (no special features selected) Example 2: SECURCTRL = 0x18 (1st SPI access), SECURCTRL = 0x19 (2nd SPI access), analogue signal multiplexing and emergency shut-off selected Reset conditions of ESECURE bit are: ● Watchdog event (register watchdog or CLK watchdog) ● Under voltage at VDD or VCC (at low battery voltage or short circuit) ● Sleep state The restriction of the dead time registers (section “Power FET Gate Driver”) and analogue / digital signal multiplexing registers can be released by writing SECURCTRL register accordingly. Table 6.6: Register SECURCTRL (0x04), security configuration MSB LSB Content - - EDMUX EACMUX EMERGENCY EDEADMULT EDEADNEG ESECURE Reset value 0 0 0 0 0 0 0 0 Internal access - - R R R R R R External access R R R/W R/W R/W R/W R/W R/W Bit Description EDMUX: Enable write access to DMUX register in run mode EACMUX: Enable write access to AMUX and CMUX registers in run mode EMERGENCY: Enable emergency shut-off functionality of power FET gate driver at VIN pin EDEADMULT: Enable write access to DEADTIME_LH and DEADTIME_HL registers in run mode EDEADNEG: Allow negative dead times in DEADTIME_LH and DEADTIME_HL registers Security warning: Setting this bis is at own risk. The customer has to guarantee that no cross currents occur at the half bridge. Damage of IC and external components are possible. ESECURE: 1: Disables write access to all restricted registers (including ESECURE bit itself) This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 32 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 If EMERGENCY bit in SECURCTRL register is set, VIN pin is used as digital input to enable / disable the power FET gate driver. If VIN pin is 'L', the power FET gate driver outputs are switched off. Figure 21: IC states diagram, case VIN used for emergency shut-off Note: To reset the IC after finishing the initial configuration, just write a false watchdog trigger command to the IC. Note: It is recommended to check the configuration every few milliseconds. In case of bit failure detection, the registers must be rewritten immediately. Therefore it is necessary to force an IC reset (e. g. a false watchdog trig ger), since register writing is blocked by ESECURE bit in SECURCTRL register in run and fail save mode. Note: During final application, the use of a fuse is recommended to prevent the system from damage caused by accidental bit changes in the IC or aging of PCB elements, e. g. power FETs. Warning: During development of IC specific software, there is a higher risk of damaging IC and PCB elements due to falsely written configuration. A current limited power supply should be used. This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 33 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 6.3 Power FET Gate Driver The power FET gate driver contains 3 independent half bridge gate drivers with short circuit protection. Each half bridge consists of a high side and a low side driver controlled by PWMH1-3 and PWML1-3 input pins. The slew rate of the power FETs is adjusted by external gate resistors. Note: The gate-drain capacitance of the power FET causes a positive gate-source voltage during motor phase transients. Additional PCB elements have to be inserted to prevent the half bridge from cross current: ● Greater off- resistance than on-resistance of RGATE (2 resistors, 1 diode, refer to typical application diagram, recommended) ● Additional gate-source capacitor, increases the VG current consumption and power losses, not possible for large power FETs The high side supply voltage is done by bootstrap principle with external capacitors and diodes. Figure 22: FET controller block diagram in half bridge configuration Warning: The bootstrap principle and circuitry must be used even if a charge pump is inserted at PCB. It is not allowed to connect D1-3 pins to any charge pump terminal on PCB. Note: The bootstrap capacitors need to be recharged every PWM cycle. 100% duty cycle is not allowed. There is no monitoring the bootstrap under voltage. Emergency shut-off functionality: If EMERGENCY bit in SECURCTRL register is set and VIN pin is L, the power FET gate driver outputs are switched off. This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 34 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 6.3.1 Control Modes for Half Bridge Applications PWMH1-3 and PWML1-3 input pins can be used in 3 or 6 PWM input mode. Table 6.7: PWMH1-3 and PWML1-3 input configuration Mode Register Description PWMH input pin controls the high side driver, PWML controls the low side 6 PWM input BRIDGEMODE = 0x7F, driver independently. GATECFG = 0x12 The dead time has to be generated in the microcontroller. There is no digital latency of the PWMH / PWML input signals. 3 PWM input BRIDGEMODE = 0x6F, PWMH input pin controls the high side driver and the low side driver inversely. PWML input pin enables the PWMH driver control. PWML = 'L' GATECFG = 0x52 switches the motor phase to high-impedance, disregarding the level at PWMH. The dead time has to be written in the dead time registers DEADTIME_LH and DEADTIME_HL. The PWMH / PWML input signals are delayed (4 to 5 CLK clocks latency to be considered). Figure 23: 6 PWM input mode transfer characteristic timing diagram Figure 24: 3 PWM input mode transfer characteristic timing diagram This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 35 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Note: In products E523.02 and E523.12 the power FET gate driver output stages GH3 and GL3 are not available. 6.3.2 Dead Time and CLK Input Clock In 3 PWM input mode the dead time is generated in the IC. The dead time derives from the CLK input clock frequency and can be adjusted to the customer application. In 6 PWM input mode there is no need to apply the input clock at CLK pin 1). CLKCTRL, DEADTIME_LH and DEADTIME_HL registers can be set to 0x00 and the next subsections descriptions can be skipped. 1) Not if PWM duty cycle measurement special function is used. 6.3.2.1 CLK Input Clock The CLK input clock - applied by the microcontroller - is mainly used for dead time generation. The accuracy of the dead time is the same as the accuracy for the controller clock (quartz accuracy possible). The CLK input clock has to be symmetrical. The frequency of the applied CLK input clock must be written to CLKDIV register. The dead time clock f CLK,dead can be divided or doubled additionally. Security warning: The CLKCTRL register must be set very carefully in correlation with the CLK input clock frequency. Incorrectly set values may cause malfunction of the system. Table 6.8: Register CLKCTRL (0x01), CLK input clock and clock divider configuration MSB LSB Content F2X TDEADDIV2 TDEADDIV1 TDEADDIV0 CLKTEST CLKDIV2 CLKDIV1 CLKDIV0 Reset value 0 0 0 0 0 0 0 0 Internal access R R R R W R R R External access R/W R/W R/W R/W R R/W R/W R/W Bit Description F2X: Use double frequency of CLK input clock to halve the dead time step size (only available when TDEADDIV = 7) TDEADDIV[2:0]: Dead time clock divider (see table below) CLKTEST: Toggled on each SPI access to CLKCTRL register, if CLK is applied CLKDIV[2:0]: CLK input clock frequency (see table below) Table 6.9: CLK input clock frequency code table fCLK CLKDIV[2:0] fCLKDIV (clock base) 32 MHz 0 4 MHz 30 MHz 2 5 MHz 28 MHz 1 4 MHz 25 MHz 3 5 MHz 24 MHz 2 4 MHz 20 MHz 3 4 MHz 18 MHz 5 6 MHz This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 36 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 fCLK CLKDIV[2:0] fCLKDIV (clock base) 16 MHz 4 4 MHz 15 MHz 5 5 MHz 12 MHz 5 4 MHz 10 MHz 6 5 MHz 8 MHz 6 4 MHz 6 MHz 7 6 MHz 5 MHz 7 5 MHz 4 MHz 7 4 MHz Table 6.10: Dead time clock divider table TDEADDIV[2:0] Control clock to input clock ratio 7 1:1 6 1:2 5 1:3 4 1:4 3 1:5 2 1:6 1 1:7 0 1:8 6.3.2.2 Dead Time Generation The dead time between off-switching of the activated and on-switching of the opposite FET is programmable in DEADTIME_LH and DEADTIME_HL registers. The dead time clock base is defined in CLKCTRL register: T CLK ,dead =T CLK⋅8−CLKCTRL[6 : 4] The dead time value calculation is: case CLKCTRL[7] = 0: case CLKCTRL[7] = 1: t dead =DEADTIME _ xx [5 : 0]⋅T CLK , dead t dead =0.5⋅DEADTIME _ xx [5: 0 ]⋅T CLK ,dead This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 37 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Table 6.11: Register DEADTIME_LH (0x24), low to high transition dead time MSB LSB Content NEG PARITY D5 D4 D3 D2 D1 D0 Reset value 0 0 1 1 1 1 1 1 Internal access R R R R R R R R External access R/W W R/W R/W R/W R/W R/W R/W Bit Description NEG: On-switching before off-switching of the correspondent power FET (negative dead time with D[5:0] value) Security warning: Using small or negative dead times is on own risk due to the possibility of driver damage. PARITY: Even register parity (write only, read as 0) D[5:0]: Dead time value. Table 6.12: Register DEADTIME_HL (0x25), high to low transition dead time MSB LSB Content NEG PARITY D5 D4 D3 D2 D1 D0 Reset value 0 0 1 1 1 1 1 1 Internal access R R R R R R R R External access R/W W R/W R/W R/W R/W R/W R/W Bit Description NEG: On-switching before off-switching of the correspondent power FET (negative dead time with D[5:0] value) Security warning: Using small or negative dead times is on own risk due to the possibility of driver damage. PARITY: Even register parity (write only, read as 0) D[5:0]: Dead time value. Note: Even parity means, the number of all 1 in the register must be even. Note: The analogue delay of HS and LS driver may be different and has to be compensated by the dead time. It has to be guaranteed by the software that no cross current occurs in the half bridges. Example 1: CLK input frequency fCLK = 4 MHz: CLK input clock frequency CLKDIV has to be set to 7. Dead time clock divider TDEADDIV set to 7: Dead time resolution is TCLK,dead = 1 / 4MHz = 250ns. DEADTIME register set to 0x43: tdead = 750ns Example 2: CLK input frequency fCLK = 18MHz: CLK input clock frequency CLKDIV has to be set to 5. Dead time clock divider TDEADDIV set to 6: Dead time resolution is TCLK,dead = 1 / 6MHz * 2 = 333.3ns. DEADTIME register set to 0x04: tdead = 1.333µs This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 38 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 6.3.3 Short Circuit Protection The drain source voltage of the external low side and high side power FETs in on-state are monitored by the IC. If the motor phase voltage M exceeds a programmable threshold, the gate driver switches the power FETs off immediately. Reference for the high side FETs is VBATS sense voltage, for the low side FETs ground. Figure 25: Short circuit protection block diagram The thresholds of high side and low side power FETs are programmable in SCTH register in low resolution mode. If higher resolution is needed, registers SCTH_HS and SCTH_LS provide 128 equidistant steps derived from VDD voltage for both high side and low side independently. If one of these registers is written, SCTH[2:0] will be ignored for the corresponding side. The calculation of the threshold values is given in the following table. Note: It is mandatory to write SCTH register, since the short circuit masking time has to be adjusted. SCTH_HS and SCTH_LS registers have to be written after SCTH register access. Table 6.13: Short circuit value calculation Mode Mean value Tolerance (+/-) Low resolution SCTH [2: 0] ⋅3.3V 8 SCTH [2: 0] ⋅275mV24mV 8 High resolution SCTH _ xS ⋅3.3V 127 SCTH _ xS ⋅275mV24mV 127 After on-switching of the power FET the error detection is masked for a programmable time. The masking time is derived from the internal 1MHz oscillator: t MT , SC =SCTH [6 : 4 ]⋅2µs This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 39 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Table 6.14: Register SCTH (0x26), short circuit threshold selection (low resolution mode) and masking time MSB LSB Content - MT2 MT1 MT0 - TH2 TH1 TH0 Reset value 0 0 0 0 0 0 0 0 Internal access - R R R - R R R External access R R/W R/W R/W R R/W R/W R/W Bit Description MT[2:0]: Short circuit initial masking time value TH[2:0]: Short circuit threshold value Table 6.15: Register SCTH_HS (0x28), high side short circuit threshold selection (high resolution mode) MSB LSB Content - D6 D5 D4 D3 D2 D1 D0 Reset value 0 0 0 0 1 1 1 1 Internal access - R R R R R R R External access R R/W R/W R/W R/W R/W R/W R/W Bit Description D[6:0]: Short circuit threshold value. On write access TH[2:0] bits of SCTH register are set to 0xF Table 6.16:Register SCTH_LS (0x29), low side short circuit threshold selection (high resolution mode) MSB LSB Content - D6 D5 D4 D3 D2 D1 D0 Reset value 0 0 0 0 1 1 1 1 Internal access - R R R R R R R External access R R/W R/W R/W R/W R/W R/W R/W Bit Description D[6:0]: Short circuit threshold value On write access TH[2:0] bits of SCTH register are set to 0xF This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 40 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Figure 26: Examples of short circuit detection, timing diagram 6.3.3.1 Superior Short Circuit Failure Reaction A superior reaction to a short circuit failure can be configured in SCPCTRL register. Table 6.17: Register SCPCTRL (0x0B), superior short circuit protection control MSB LSB Content - - - SCALL - - SCFCT1 SCFCT0 Reset value 0 0 0 0 0 0 0 0 Internal access - - - R - - R R External access R R R R/W R R R/W R/W Bit Description SCALL: 1: Switch off all power FETs on short circuit, 0: Switch off only correspondent FET on short circuit SCFCT[1:0]: See following table This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 41 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Table 6.18: Superior short circuit protection behaviour SCFCT[1:0] Description Depiction 0 Re-try of power FET switching at every rising edge of the correspondent input control. Interrupt is thrown after first short circuit failure detection 1 Drivers remain off until interrupt is cleared by the microcontroller 2 One re-try of power FET switching allowed, after that all drivers remain off until interrupt is cleared by the microcontroller 3 Two re-tries of power FET switching allowed, after that all drivers remain off until interrupt is cleared by the microcontroller 6.3.4 Divergent Usage of Power FET Gate Driver The power FET gate driver can be used differently from half bridge applications for driving single power FETs or direct loads. Each half bridge consisting of one high side and one low side driver can be configured in BRIDGEMODE and GATECFG1-3 registers. This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 42 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Table 6.19: Register BRIDGEMODE (0x20), bridge mode configuration MSB LSB Content - ASYNC DM31 DM30 DM21 DM20 DM11 DM10 Reset value 0 0 0 0 0 0 0 0 Internal access - R R R R R R R External access R R/W R/W R/W R/W R/W R/W R/W Bit Description ASYNC: 1: PWMH1-3 and PWML1-3 are not synchronized (CLK input clock does not have ot be applied), 0: PWMH1-3 and PWML1-3 are synchronized, CLK input clock must be applied DM3[1:0]: Phase 3 driver mode, see below for coding DM2[1:0]: Phase 2 driver mode, see below for coding DM1[1:0]: Phase 1 driver mode, see below for coding Table 6.20: Register GATECFG1-3 (0x21, 0x22, 0x23), motor phase gate driver control configuration MSB LSB Content GLSYNC GLINV GHHZ GHPWM GHLEVEL GLHZ GLPWM GLLEVEL Reset value 0 0 0 1 0 0 1 0 Internal access R R R R R R R R External access R/W R/W R/W R/W R/W R/W R/W R/W Bit Description GLSYNC: Low side driver is controlled synchronous (non inverted) to high side driver (ignored if DM = 3) GLINV: Low side driver is controlled inverted to HS driver (ignored if DM != 3) GHHZ: Switch GH to high impedance GHPWM: Use PWMH input pin to control high side driver (ignored if GHHZ = 1) GHLEVEL: High side driver output level, if GHHZ = 0 and GHPWM = 0 (control via SPI possible) GLHZ: Switch GL to high impedance GLPWM: Use internal high side driver control to control low side driver (ignored if GLHZ = 1, depending on GLHZ, GLSYNC and GLINV), refer to GLLEVEL: Low side driver output level, if GLHZ = 0 and GLPWM = 0 (control via SPI possible) Note: GLINV = 1 and GLSYNC = 1: driver off due to security reasons This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 43 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Figure 27: Illustration of GATECFG register driver control configuration Table 6.21: Gate driver applications Divergent usage of Application DM (BRIDGEGATECFG half bridge MODE register) register recomrequirement mendation Half bridge (standard) BLDC, EC, DC motors 3 Depiction “0-0--0--” Note: recharge of bootstrap capacitor necessary This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 44 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Divergent usage of Application DM (BRIDGEGATECFG half bridge MODE register) register recomrequirement mendation 1 NMOS high side and 1 NMOS low side FET DC motors, other loads 2 “000xx0xx” 2 NMOS low side FETs DC motors, other loads 1 “000xx0xx” 2 direct loads Small 1 motors, other loads “00xxxxxx” Depiction Note: recharge of bootstrap capacitor necessary This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 45 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Divergent usage of Application DM (BRIDGEGATECFG half bridge MODE register) register recomrequirement mendation 1 direct load, reduced on-resistance Small 1 motors, other loads “10xxxx--” Driving of external charge pump Active high 1 side reverse polarity protection “00010000” - - - 0 Depiction Disabled, GH and GL switched to ground Security warning: DM1-3 set to 1 or 2: The short circuit protection is not or only partially available. In these cases the over current detection may be used instead. Security warning: DM1-3 set to 1 or 2: Both drivers operate independently, so the customer has to guaranty that no cross current occurs from battery to ground. Note: External loads, which are connected to VBAT directly, are on-switched during power-up, since the driver outputs are switched to ground. Note: If using inductive loads in other than half bridge configuration, it is necessary to add free wheeling diodes to prevent the IC from exceeding absolute maximum ratings. Examples: Some gate control examples are given in the following table. Table 6.22: Gate control configuration examples Description GATECFG register PWMH input on HS driver, PWML input on LS driver “00010010” PWMH controls GH and GL inversely, PWML enables half bridge “01010010” PWMH input on HS driver, LS driver statically to level L “0001000L” HS driver statically to level L, PWML input on LS driver “0000L001” HS and LS driver high impedance “00100100” This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 46 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 6.4 Measurement Functions Measurement of motor current and internal analogue signals is available in the IC. 6.4.1 Motor Current Measurement Amplifier An integrated low speed operational amplifier with external elements measures the motor current via a low side shunt resistor. Common mode input voltage and gain of the amplifier have to be adjusted by external resistor values. The amplifier output IO can be connected to an ADC input of the microcontroller. The maximum output voltage is limited by the internal 3.3V supply VDD. Figure 28: Motor current measurement amplifier circuitry 6.4.2 Analogue Signal Measurement The IC is able to provide divided pin potentials and internal analogue signals to the microcontroller. The analogue signals can be switched to IO pin via AMUX register. The observable voltage range at IO pin is limited from 0V to VVDD. Table 6.23: Register AMUX (0x17), analogue signal measurement selection MSB LSB Content - - - S4 S3 S2 S1 S0 Reset value 0 0 0 0 0 0 0 0 Internal access - - - R R R R R External access R R R R/W R/W R/W R/W R/W Bit Description S[4]: Reserved, bit must be 0 S[3:0]: Analogue signal selection. See below for coding. This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 47 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Table 6.24: Analogue signals measurement code table AMUX Analogue signal to IO pin 0 Current amplifier mode (standard) 1 VVIN 2 VIP 3 VTEMP 4 VVBAT / 12 5 VVG / 5 6 Over current comparator threshold (IOCOMPTHR) 7 Low side power FET short circuit threshold (SCTH, SCTH_LS) 8 VGL1 9 VGL2 10 VGL3 AMUX register write access is locked, if EACMUX bit in SECURCTRL register is 0. Security warning: The switching of internal signals to IO pin disables the motor current measurement. The absence of motor over current protection is completely at own risk. Note: This functionality is disabled by default. The activation is subject to the security rules described in section Initial Configuration and Security (setting EACMUX bit in SECURCTRL register). Example: A recommended scenario from over current measurement to apply an internal signal to the microcontroller is: ● Set EN_OC bit in IRQMSK1 to 0 (disable interrupt flag) ● Set IOCOMPTHR register to maximum value (63) to prevent the IC from false over current failure detection ● Set AMUX register Example: A recommended scenario to return to over current measurement is: ● Set AMUX register to 0 ● Set IOCOMPTHR register to proper value ● Set EN_OC bit in IRQMSK1 to 1 (enable interrupt flag) This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 48 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 6.5 Monitoring and Safety The IC provides several failure monitoring and protection functions: ● Battery over voltage at VBAT pin ● VG power FET supply under voltage ● VCC microcontroller supply under voltage ● Motor over current ● IC over temperature ● Watchdog Table 6.25: Monitoring functions Function VBAT over voltage Failure condition Failure actions Reset condition VVBAT > VVBAT,OV, Switch all high side SAFECTRL[3] power FETs off =1 Depiction VVBAT < VVBAT,OV cases SAFECTRL[7:6]: 0: Switch all low side power FETs on 1: Switch all low side power FETs off 2: allow switching of low side power FETs VG under voltage VVG < VVG,UV, Switch all power FETs SAFECTRL[2] off =1 VVG > VVG,UV This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 49 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Function Failure actions Reset condition Switch all power FETs off, reset of external microcontroller, reset of internal registers except IRQSTATx VVCC >VVCC,UV, restart of the IC and external microcontroller Motor over cur- VIO > VDAC,OC rent Switch all power FETs off VIO < VDAC,OC, Over temperat- TJ > Totemp ure with SAFECTRL[1] =1 Switch all power FETs, VCC and VG regulator off, disable BUS, reset of external microcontroller, reset of internal registers except IRQSTATx TJ < Totemp, VCC under voltage Failure condition VVCC < VVCC,UV Depiction cleared interrupt restart of the IC and external microcontroller This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 50 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Function Failure condition Over temperat- TJ > Totemp ure with SAFECTRL[1] =0 Failure actions Reset condition Switch all power FETs off, disable BUS, Depiction TJ < Totemp Safety warning: The microcontroller has to switch into low power mode immediately, else the IC might be damaged. Watchdog event No watchdog Switch all power FETs trigger or false off, reset of external trigger microcontroller, reset of internal registers except IRQSTATx Restart of the IC and external microcontroller The SAFECTRL safety functions register configures the failure reactions of the IC. This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 51 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Table 6.26: Register SAFECTRL (0x05), safety function configuration MSB LSB Content VBATOV_ VBATOV_ VGUV6V FR1 FR0 SOC SVBATO SVG OTVCCOFF OTSLEEP Reset value 0 0 0 1 1 1 1 0 Internal access R R R R R R R R External access R/W R/W R/W R/W R/W R/W R/W R/W Bit Description VBATOV_FR[1:0]: Refer to following table VGUV6V: VVG under voltage threshold select for VVBAT > 7V (0) or VVBAT > 6V (1) SOC: Safety function on over current SVBATO: Safety function on VBAT over voltage SVG: Safety function on VG over or under voltage OTVCCOFF: Disable VCC supply on over temperature. This bit has no effect when OTSLEEP is 1 (VCC is always off in sleep mode). OTSLEEP: IC shut down on over temperature Table 6.27: VBAT over voltage failure reaction code table SAFECTRL[7:6] VBAT over voltage failure reaction 0 All LS-FETs are switched on, all HS-FETs are switched off automatically 1 All FETs are switched off automatically 2 All HS-FETs are switched off automatically, switching of LS-FETs allowed 6.5.1 Motor Over Current The motor current measurement amplifier output at IO pin is monitored by the IC. If the voltage exceeds a programmable threshold, a motor over current is detected. The threshold value is calculated to: V th , OC = IOCOMPTHR±8 ⋅V VDD 64 Table 6.28: Register IOCOMPTHR (0x16), motor over current threshold MSB LSB Content - - D5 D4 D3 D2 D1 D0 Reset value 0 0 0 0 0 0 0 0 Internal access - - R R R R R R R R/W R/W R/W R/W R/W R/W External access R Bit Description D[5:0]: Motor over current threshold value This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 52 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Figure 29: Motor over current circuitry If CMUX register is written accordingly, the motor over current functionality can be applied to other internal analogue signals. Security warning: The deactivation of motor over current monitoring is completely at own risk. Note: This functionality is disabled by default. The activation is subject to the security rules described in section Initial Configuration and Security (setting EACMUX bit in SECURCTRL register). Table 6.29: Register CMUX (0x18), motor over current comparator input signal selection MSB LSB Content - - - S4 S3 S2 S1 S0 Reset value 0 0 0 0 0 0 0 0 Internal access - - - R R R R R External access R R R R/W R/W R/W R/W R/W Bit Description S4: Reserved, bit must be 0 S3: Motor over current comparator configuration. See below for coding. Table 6.30: Switch analogue signals to motor over current comparator code table CMUX Analogue signals 0 Motor over current comparator (standard) 1 VVIN 2 VIP 3 VTEMP 4 VVBAT / 12 5 VVG / 5 6 Over current comparator threshold (IOCOMPTHR) 7 Low side power FET short circuit threshold (SCTH, SCTH_LS) This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 53 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 CMUX Analogue signals 8 VGL1 9 VGL2 10 VGL3 Note: CMUX register write access is locked, if EACMUX bit in SECURCTRL register is 0. 6.5.2 Watchdog There are two watchdogs available: ● Register watchdog: standard or window watchdog for monitoring of the external microcontroller ● CLK watchdog: monitoring of the CLK input clock signal Table 6.31: Register WDCTRL (0x10), watchdog control MSB LSB Content WDUSEC PINTRIG W WDTOW1 WDTOW0 WDFOW WDTEST REGWDEN CLKWDEN Reset value 1 0 1 1 - - 1 1 Internal access R R R R W W R R External access R/W R/W R/W R/W R R R/W R/W Bit Description WDUSECW: Use closed window for register watchdog (WDT,CW ) PINTRIG: 1: Register watchdog is triggered on PWML3 rising edge, 0: Register watchdog is triggered via WDTRIG register (SPI access) WDTOW[1:0]: Register watchdog open window time (WDT,OW) WDFOW: Register watchdog is in first open window WDTEST: 1: Register watchdog is stopped (T pin = 'H'), 0: Register watchdog is running REGWDEN: Enable register watchdog CLKWDEN: Enable CLK watchdog For debugging purposes and software upload only, the watchdog can be stopped by setting T pin to VCC level. 6.5.2.1 Register Watchdog The register watchdog can be configured in WDCTRL register within the first open window. It can be triggered by SPI access to WDTRIG register or a rising edge at PWML3 input pin. This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 54 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Table 6.32: Register WDTRIG (0x11), watchdog trigger MSB LSB Content - - - - - - - TRIG Reset value 0 0 0 0 0 0 0 0 Internal access - - - - - - - R External access R R R R R R R R/W Bit Description TRIG: Value has to be toggled on each write access in order to trigger the watchdog 6.5.2.2 CLK Watchdog If enabled in WDCTRL register, the CLK watchdog is running when the IC is in run mode. If the CLK input clock signal is missing, a watchdog failure event is created. 6.5.3 Interrupt The interrupt bits in IRQSTAT1 and IRQSTAT2 registers are set in case of the accordant failure event. Although there is no dedicated interrupt pin, an interrupt can be signalized to the microcontroller. Table 6.33: Interrupt output configuration possibilities Output Pin Mode Configuration Signal direction Shared functionality with VSEL 1) VVCC = 3.3V IOCFG[1] = 1, IOCFG[0] = 1 High active VCC regulator voltage selection VSEL 1) VVCC = 5V IOCFG[1] = 1, IOCFG[0] = 1 Low active VCC regulator voltage selection - IOCFG[1] = 0, IOCFG[0] = 1 Low active SPI interface SO 2) 1) Shared functionality with VSEL pin: Only available in run mode, since VSEL is used for VCC regulator voltage selection in power-up mode. 2) Shared functionality with SO pin: If CSB = 'L', SO is used as SPI data output in any configuration. An interrupt bit is cleared by writing 1 to the interrupt bit in IRQSTAT registers or power-up (applying battery voltage). It is not clear during sleep mode. The interrupt mask bits in IRQMSK1 and IRQMSK2 registers mask the effect of the interrupt bits in IRQSTAT registers on the selected interrupt output pin (VSEL or SO). Warning: If shared functionality at SO pin is used, a SPI command causes events at the interrupt line, to be masked by the microcontroller. Note: Even if the failure reaction is disabled in SAFECTRL register, the interrupt bits are set. Note: A wired-or interrupt line at SO pin is not allowed. Note: After finishing initial configuration the VG under voltage interrupt is likely set, since the VG voltage regulator needs some time to power-up. This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 55 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Table 6.34: Register IRQMSK1 (0x12), interrupt mask register MSB LSB Content EN_OT EN_OC EN_SC_H EN_SC_H EN_SC_H EN_SC_L EN_SC_L EN_SC_L S3 S2 S1 S3 S2 S1 Reset value 0 0 0 0 0 0 0 0 Internal access R R R R R R R R External access R/W R/W R/W R/W R/W R/W R/W R/W Bit Description EN_OT: Enable over temperature interrupt EN_OC: Enable motor over current interrupt / CMUX multiplexer interrupt EN_SC_HS3: Enable HS 3 short circuit interrupt EN_SC_HS2: Enable HS 2 short circuit interrupt EN_SC_HS1: Enable HS 1 short circuit interrupt EN_SC_LS3: Enable LS 3 short circuit interrupt EN_SC_LS2: Enable LS 2 short circuit interrupt EN_SC_LS1: Enable LS 1 short circuit interrupt Table 6.35: Register IRQSTAT1 (0x13), interrupt status register MSB LSB Content OT OC SC_HS3 SC_HS2 SC_HS1 SC_LS3 SC_LS2 SC_LS1 Reset value 0 0 0 0 0 0 0 0 Internal access R/W R/W R/W R/W R/W R/W R/W R/W External access R/W R/W R/W R/W R/W R/W R/W R/W Bit Description OT: Over temperature interrupt flag OC:Motor over current interrupt flag / CMUX multiplexer interrupt flag SC_HS3: HS 3 short circuit interrupt flag SC_HS2: HS 2 short circuit interrupt flag SC_HS1: HS 1 short circuit interrupt flag SC_LS3: LS 3 short circuit interrupt flag SC_LS2: LS 2 short circuit interrupt flag SC_LS1: LS 1 short circuit interrupt flag This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 56 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Table 6.36: Register IRQMSK2 (0x14), interrupt mask register MSB LSB Content - EN_CLK_ EN_REG_ EN_PWM EN_VBAT_ EN_VG_O EN_VG_U EN_VCC_ WD WD OV V V UV Reset value 0 0 0 0 0 0 0 0 Internal access - R R R R R R R External access R R/W R/W R/W R/W R/W R/W R/W Bit Description EN_CLK_WD: Enable clock watchdog interrupt EN_REG_WD: Enable register watchdog interrupt EN_PWM: Enable dedicated hardware at BUS pin (PWM mode) interrupt EN_VBAT_OV: Enable VBAT over voltage interrupt EN_VG_OV: Enable VG over voltage interrupt EN_VG_UV: Enable VG under voltage interrupt EN_VCC_UV: Enable VCC under voltage interrupt Table 6.37: Register IRQSTAT2 (0x15), interrupt status register MSB LSB Content - CLK_WD REG_WD PWM VBAT_OV VG_OV VG_UV VCC_UV Reset value 0 0 0 0 0 0 0 0 Internal access - R/W R/W R/W R/W R/W R/W R/W External access R R/W R/W R/W R/W R/W R/W R/W Bit Description CLK_WD: Clock watchdog interrupt flag REG_WD: Register watchdog interrupt flag PWM: Dedicated hardware at BUS pin (PWM mode) interrupt flag VBAT_OV: VBAT over voltage interrupt flag VG_OV: VG over voltage interrupt flag VG_UV: VG under voltage interrupt flag VCC_UV: VCC under voltage interrupt flag 6.5.4 Internal Digital Signal Monitoring Internal digital signals, e. g. monitoring comparator outputs or digital input pin levels, can be monitored by the microcontroller. They can be switched to SO pin transparently via DMUX register or read via SPI in DMON1-2 register. DMUX register write access is locked, if EDMUX bit in SECURCTRL register is 0. Table 6.38: Register DMUX (0x19), digital value output SO selection MSB LSB Content - - - - S3 S2 S1 S0 Reset value 0 0 0 0 0 0 0 0 Internal access - - - - R R R R External access R R R R R/W R/W R/W R/W Bit Description S3:0 : SO pin digital signal output selection. See below for coding. This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 57 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Table 6.39: Digital signal output code table Signal at SO pin 1) DMUX 0 No internal digital signal output 1 VSEL pin level 2 S pin level 3 T pin level 4 Motor over current comparator level 5 Over temperature comparator level 6 On-state of low side gate driver output GL1 7 On-state of low side gate driver output GL2 8 On-state of low side gate driver output GL3 9 VG under voltage comparator level 1) Shared functionality with SO pin: If CSB = 'L', SO is used as SPI data output in any configuration. Table 6.40: Register DMON1 (0x1A), digital value monitoring MSB LSB Content OT OC SC_HS3 SC_HS2 SC_HS1 SC_LS3 SC_LS2 SC_LS1 Reset value - - - - - - - - Internal access W W W W W W W W External access R R R R R R R R Bit Description OT: Over temperature comparator level OC: Motor over current comparator level SC_HS3: High side 3 short circuit comparator level SC_HS2: High side 2 short circuit comparator level SC_HS1: High side 1 short circuit comparator level SC_LS3: Low side 3 short circuit comparator level SC_LS2: Low side 2 short circuit comparator level SC_LS1: Low side 1 short circuit comparator level This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 58 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Table 6.41: Register DMON2 (0x1B), digital value monitoring MSB LSB Content S VTHONLS VTHONLS VTHONLS VBAT_OV VG_OV 3 2 1 VG_UV - Reset value - - - - - - - 0 Internal access W W W W W W W W External access R R R R R R R R Bit Description S: Pin S input comparator level VTHONLS3: Low side 3 on threshold comparator level VTHONLS2: Low side 2 on threshold comparator level VTHONLS1: Low side 1 on threshold comparator level VBAT_OV: VBAT over voltage comparator level VG_OV: VG over voltage comparator level VG_UV: VG under voltage comparator level This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 59 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 6.6 Communication Interfaces 6.6.1 BUS interface (LIN or PWM mode) The BUS interface is a bidirectional, single wired, high voltage, low active interface. It can be used as a transceiver for LIN standard (523.01 and 523.02 only) or PWM control with error feedback. Figure 30: BUS block diagram The BUS interface can be used as master or slave. The transmission data on TXD pin is converted into the BUS signal through a current limited, wave-shaping low side driver. The receiver converts the data stream from BUS to RXD pin. In recessive state, BUS is pulled to VBAT by an internal pull-up resistor (30kΩ typically) and a diode in series, so no external pull-up components are required for slave applications. Master applications require an additional external pull-up resistor and a series diode. The BUS transceiver can handle a voltage swing from 40V down to ground and survive -27V. The device also prevents from back current through the BUS pin to the supply pin in case of a ground shift or loss or supply voltage disconnection. Figure 31: BUS transceiver transmit timing This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 60 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Figure 32: BUS transceiver receive timing 6.6.2 Flash Mode and TXD Time-Out A flash mode allows an increasing of the transmit baud rate up to 115 kBd and the receive baud rate up to 250kBd. The flash mode can be activated by setting IOCFG[6] = 1. In order to prevent the BUS from being permanent dominant in case of permanent low level at TXD pin, a TXD time-out timer switches BUS to recessive mode after approximately 8ms. The timer is triggered by a negative TXD edge and reset by a positive TXD edge. This function can be deactivated by writing IOCFG[7] = 0. 6.6.3 LIN Compatibility (523.01 and 523.02 only) The IC fulfils LIN standard 2.2A (ISO 9141). LIN conformity is given at battery voltage 7V to 18V. LIN2.2 transceivers are backward compatible down to LIN1.3 at physical layer. But not the other way around. A node using LIN 2.2 physical layer can operate in a LIN 1.3 cluster. 1) 1) Refer to LIN Specification Package Revision 2.2A December 31, 2010, Page 15 6.6.4 Communication Interfaces Configuration BUS interface and interrupt output can be configured in IOCFG register. This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 61 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Table 6.42: Register IOCFG (0x06), interface configuration MSB LSB Content TXDTO_E LIN_FLAS PWMN H FREQ BUSIF PWMIF - VSELDIR EINT Reset value 1 0 0 0 0 0 0 0 Internal access R R R R R - R R External access R/W R/W R/W R/W R R R/W R/W Bit Description TXDTO_EN: Enable TXD dominant clamping time-out LIN_FLASH: Enable LIN flash mode PWMFREQ: 1: 2 kHz mode (500 kHz sampling frequency), 0: 1 kHz mode (250 kHz sampling frequency) BUSIF: Enable dedicated hardware for duty cycle measurement PWMIF: 1: Apply dedicated hardware for duty cycle measurement on S pin, 0: Apply dedicated hardware for duty cycle measurement on BUS pin VSELDIR: 1 VSEL is interrupt output, 0: SO is interrupt output EINT: Enable shared functionality at VSEL or SO pin (interrupt output) 6.6.5 Dedicated Hardware for PWM Duty Cycle Measurement Dedicated hardware can be used to support the external microcontroller in polling the RXD pin. The bus PWM interface uses the internal frequency f CLKDIV / 16 (refer to section CLK input clock): ● 4Mhz / 16 = 250kHz for 4MHz clock base ● 5Mhz / 16 = 312.5kHz for 5MHz clock base ● 6Mhz / 16 = 375kHz for 6MHz clock base The registers are updated every 16 * 255 / fCLKDIV: ● 16 * 255 / 4MHz = 1.020ms for 4MHz clock base ● 16 * 255 / 5MHz = 816us for 5MHz clock base ● 16 * 255 / 6MHz = 680us for 6MHz clock base. The PMW_LH and PWM_HL registers contain the time values of RXD edge events of the previous sample period. Value 255 means, that there was no proper edge found. To signalize the availability of new register values, an interrupt is generated. If the controller does not read the register values within the current sample period, the old values will be overwritten by the new ones. This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 62 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Figure 33: PWM duty cycle measurement timing diagram Table 6.43: Register PWM_LH (0x09), PWM rising edge position MSB LSB Content D7 D6 D5 D4 D3 D2 D1 D0 Reset value 0 0 0 0 0 0 0 0 Internal access W W W W W W W W External access R R R R R R R R Bit Description D[7:0]: PWM rising edge position value Table 6.44: Register PWM_HL (0x0A),PWM falling edge position MSB LSB Content D7 D6 D5 D4 D3 D2 D1 D0 Reset value 0 0 0 0 0 0 0 0 Internal access W W W W W W W W External access R R R R R R R R Bit Description D[7:0]: PWM falling edge position value Note: The sampling clock is not depending on the PWM-frequency of the interface. So, with slow PWM interfaces it may take a number of readouts by the µC to be able to calculate the information which is transferred by the PWM This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 63 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 interface. The advantage of this "open" solution is, that the controller is able to analyse even special PWM coding with additional information hidden inside the cycle. 6.6.6 SPI The SPI clock is high active (CPOL = 0). The data is sampled with second clock edge (CPHA = 1). The SPI output pin SO is high resistive, if CSB = 'H' (SPI inactive). Note: It is recommended to re-read every SPI write command to ensure a correct configuration of the IC. Figure 34: SPI write command Figure 35: SPI read command A[6:0]: register address, D[7:0]: register data Figure 36: SPI timing diagram This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 64 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 6.9 Register Table Table 6.47: Registers Register Name Address Description CLKCTRL 0x01 CLK input clock and clock divider configuration CHIPCTRL 0x02 Wake-up configuration SLEEPCTRL 0x03 Sleep mode control SECURCTRL 0x04 Security configuration SAFECTRL 0x05 Safety function configuration IOCFG 0x06 Interface configuration VREGCTRL 0x07 VCC and VG supply control PWM_LH 0x09 PWM rising edge position PWM_HL 0x0A PWM falling edge position SCPCTRL 0x0B Superior short circuit protection control WDCTRL 0x10 Watchdog control WDTRIG 0x11 Watchdog trigger IRQMSK1 0x12 Interrupt mask register IRQSTAT1 0x13 Interrupt status register IRQMSK2 0x14 Interrupt mask register IRQSTAT2 0x15 Interrupt status register IOCOMPTHR 0x16 IO Comparator threshold AMUX 0x17 Analogue signal measurement selection CMUX 0x18 Motor over current comparator input signal selection DMUX 0x19 Digital value output SO selection DMON1 0x1A Digital value monitoring DMON2 0x1B Digital value monitoring BRIDGEMODE 0x20 Bridge mode configuration GATECFG1 0x21 Motor phase gate driver control configuration, half bridge 1 GATECFG2 0x22 Motor phase gate driver control configuration, half bridge 2 GATECFG3 0x23 Motor phase gate driver control configuration, half bridge 3 DEADTIME_LH 0x24 Low to high transition dead time DEADTIME_HL 0x25 High to low transition dead time SCTH 0x26 Short circuit threshold selection (low resolution mode) and masking time SCTH_HS 0x28 High side short circuit threshold selection (high resolution mode) SCTH_LS 0x29 Low side short circuit threshold selection (high resolution mode) This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 65 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 After setting ESECURE bit in SECURCTRL register, the registers listed in the table below are read-only. Table 6.48: Restricted registers Restriced Register Name Comment CLKCTRL BRIDGEMODE GATECFG1-3[7:3] DEADTIME_LH Writeable if bit EDEADMULT in register SECURCTRL is set. DEADTIME_HL Writeable if bit EDEADMULT in register SECURCTRL is set. SECURCTRL SAFECTRL SCPCTRL WDCTRL IOCFG[7:1] VREGCTRL CHIPCTRL AMUX Writeable if bit EACMUX in register SECURCTRL is set. CMUX Writeable if bit EACMUX in register SECURCTRL is set. DMUX Writeable if bit EDMUX in register SECURCTRL is set. This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 66 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 7 Package Reference 7.1 QFN44L7 Package Outline and Dimensions are according JEDEC MO-220 K, variant VKKD-3 Note: The mm values are valid, the inch values contain rounding errors. Note: For assembler specific pin1 identification please see QM document 08SP0363.xx (Pin 1 specification) This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 67 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 7.2 QFN48L7 Package Outline and Dimensions are according JEDEC MO-220 K, variant VKKD-6, except reduced terminal length of 0.4mm. Note: The mm values are valid, the inch values contain rounding errors. Note: For assembler specific pin1 identification please see QM document 08SP0363.xx (Pin 1 specification) This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 68 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 7.3 QSOP44 Package Outline and Dimensions: No special JEDEC specification available for 300mil QSOP. Package dimensions are according JEDEC MS-013-E, variant AE (SO28). Differences are e (pitch) and b (terminal lead width, is within JEDEC MS-013-E but, in general, more at the lower limit). Note: The mm values are valid, the inch values contain rounding errors. Note: For assembler specific pin1 identification please see QM document 08SP0363.xx (Pin 1 specification) This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 69 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 8 Typical Application Figure 37: Typical application Note: Do not insert filter capacitors between battery and the positive terminal of shunt resistor. This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 70 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Table 8.1: External Components External Components VBAT capacitance Condition Symbol CVBAT 6) ceramic Min Typ Max Unit 33 47 - μF 80 100 - μF Battery input capacitance, close to battery and ground PCB input 6) CVBAT,EMC - 10 - nF Bridge supply storage capacitance 6) CVBAT,storage - 2) - mF CVG 8 10 50 μF 80 100 120 nF 8 3) 50 μF 80 100 120 nF CVDD RVSEL RINT 80 4.7 - 330 56 500 6.8 - nF kΩ kΩ CBST 80 330 4) nF - - - - VG capacitance 6) RESR > 0.8Ω ceramic VCC capacitance CVCC ceramic VDD capacitance VSEL pull resistance Interrupt series resistor ceramic VSEL used as interrupt output Bootstrap capacitance Bootstrap diode RESR > 3Ω (series DBST resistance might be added alternatively), Ipeak > 4A Series gate resistances of power FETs RGate 20 - - Ω Power FET gate-source pull resistance RGS - 100 - kΩ fPWM = 25kHz, 12V QFET - - 250 nC fPWM = 50kHz, 12V - - 100 nC Case no reverse RSC,HS polarity protection at power FET stage 80 - - Ω Capacitive gate charge of power FETs High side short circuit reference protection series resistance, comparator threshold is increased by ISC,HS * RSC,HS Current measurement amplifier resistances RSH, RFP, RFN, RPP, RG 5) - - T pull down resistance, short distance to ground RT - 1.2 kΩ 0 No other components than buffer capacitors allowed Depending on application Depending on load transients 4) Depending on CVG 5) Amplifier to be designed by customer 6) For ISO pulse and load dump >50V required 1) 2) 3) To avoid EMC problems at PCB level, the clock lines on PCB – particularly the CLK line at high frequency (>6MHz) - must be designed very carefully: ● Make short connection between microcontroller and IC at clock and ground line ● Avoid ground loops ● Insert 100Ω ... 120Ω resistors close to clock driver output for line matching reasons This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 71 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 9 Revision History Rev. ID .00 Author H. Hauswald Date 07.05.2014 Description of changes Initial version (based on E523.01B data sheet) This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 72 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 Table of Content 1 Absolute Maximum Ratings...................................................................................................................................... 7 2 ESD Protection....................................................................................................................................................... 10 3 Recommended Operating Conditions..................................................................................................................... 11 4 Electrical Characteristics........................................................................................................................................ 13 4.1 Power Supply and Management.................................................................................................................... 13 4.2 Power FET Gate Driver.................................................................................................................................. 15 4.3 Measurement Functions................................................................................................................................. 15 4.4 Monitoring and Safety.................................................................................................................................... 16 4.5 Communication Interfaces............................................................................................................................. 17 5 Typical Operating Characteristics........................................................................................................................... 20 6 Detailed functional description............................................................................................................................... 22 6.1 Power Supply and Management.................................................................................................................... 23 6.1.1 VCC Microcontroller Supply................................................................................................................... 23 6.1.2 Power FET Gate Voltage Supply VG...................................................................................................... 26 6.1.3 Internal Supply VDD............................................................................................................................... 26 6.1.4 Reset...................................................................................................................................................... 26 6.1.5 IC State Control...................................................................................................................................... 26 6.1.5.1 Power Up....................................................................................................................................... 27 6.1.5.2 Shut-down and Sleep Mode........................................................................................................... 29 6.1.5.3 Wake Up........................................................................................................................................ 30 6.1.6 Board Level Protection........................................................................................................................... 32 6.2 Initial Configuration and Security.................................................................................................................... 33 6.3 Power FET Gate Driver.................................................................................................................................. 35 6.3.1 Control Modes for Half Bridge Applications............................................................................................ 36 6.3.2 Dead Time and CLK Input Clock............................................................................................................ 37 6.3.2.1 CLK Input Clock............................................................................................................................. 37 6.3.2.2 Dead Time Generation................................................................................................................... 38 6.3.3 Short Circuit Protection.......................................................................................................................... 40 6.3.3.1 Superior Short Circuit Failure Reaction ......................................................................................... 42 6.3.4 Divergent Usage of Power FET Gate Driver........................................................................................... 43 6.4 Measurement Functions................................................................................................................................. 48 6.4.1 Motor Current Measurement Amplifier................................................................................................... 48 6.4.2 Analogue Signal Measurement.............................................................................................................. 48 6.5 Monitoring and Safety.................................................................................................................................... 50 6.5.1 Motor Over Current................................................................................................................................ 53 6.5.2 Watchdog............................................................................................................................................... 55 6.5.2.1 Register Watchdog......................................................................................................................... 55 6.5.2.2 CLK Watchdog............................................................................................................................... 56 6.5.3 Interrupt.................................................................................................................................................. 56 6.5.4 Internal Digital Signal Monitoring............................................................................................................ 58 6.6 Communication Interfaces............................................................................................................................. 61 6.6.1 BUS interface (LIN or PWM mode)........................................................................................................ 61 This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 73 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 6.6.2 Flash Mode and TXD Time-Out............................................................................................................. 62 6.6.3 LIN Compatibility (523.01 and 523.02 only)............................................................................................ 62 6.6.4 Communication Interfaces Configuration............................................................................................... 62 6.6.5 Dedicated Hardware for PWM Duty Cycle Measurement.......................................................................63 6.6.6 SPI......................................................................................................................................................... 65 6.9 Register Table................................................................................................................................................ 66 7 Package Reference................................................................................................................................................ 68 7.1 QFN44L7 ...................................................................................................................................................... 68 7.2 QFN48L7....................................................................................................................................................... 69 7.3 QSOP44......................................................................................................................................................... 70 8 Typical Application.................................................................................................................................................. 71 9 Revision History..................................................................................................................................................... 73 This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 74 / 75 B6 Bridge FET Driver with LIN/PWM Interface E523.01C, 02C, 11C, 12C PRELIMINARY INFORMATION – May, 7, 2014 WARNING – Life Support Applications Policy Elmos Semiconductor AG is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing Elmos Semiconductor AG products, to observe standards of safety, and to avoid situations in which malfunction or failure of an Elmos Semiconductor AG Product could cause loss of human life, body injury or damage to property. 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ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0128E.00 75 / 75