STMicroelectronics
New European Rad-Hard Products
fo Space
Thibault BRUNET
Marketing Manager
10/3/2014
Thibault Brunet – Aerospace & High Reliability Products
1
Outline
• ST Positioning in Space
• Space Portforlio Overview
• New Rad-Hard Products
•
•
•
•
•
•
ELDRS free 100 krad Bipolar Transistors
16-bit bus Interfaces & Level Shifters
LVDS Series
Voltage References
Fast Comparators
65 nm ASIC Platform
• Product Coming Soon
• New Generation Linear Voltage Regulator
• Dual Low Side Gate Driver
• Smart Electronic Fuse (ICL)
Thibault Brunet – Aerospace & High Reliability Products
10/3/2014
ST Positionning in Aerospace
• Best In Class Dedicated Products
• Selected Technologies :
• Rad-Hard Capable – Stable Quality & Longevity through Volume
• Specific Design with Specific Radiation Targets
• 30 years+ Experience for Assembly & Logistic in Rennes
• Stable Production Outcomes over Many Years
• Engineering Models Using Same Material as Flight Model
• Rad-Hard Qualified Products
• Agency Qualification : ESCC – QML-V – JANS
• Enhanced Radiation Requirements
• Enhanced Low Dose Rate – Displacement Damages – SET…
Best Products
Secure Procurement
No Upscreen Cost
Thibault Brunet – Aerospace & High Reliability Products
10/3/2014
3
ST portfolio for Aerospace
3Q14 Status
Discrete
devices
New
MOSFETs
Logic and
interfaces
Analog and
sensors
Power
management
LVDS
ADC
Linear
regulator
DAC
PWM
Controllers
Op-amps
Current
limiters
Bus drivers
New
Bipolar
transistors
Level shifters
ACMOS logic
Schottky
diodes
New
HCMOS logic
New
Bipolar
diodes
CMOS4000
New
Comparators
New
Gate Drivers
Voltage
references
Technology Provider
Legend:
ESCC
DLA
Thibault Brunet – Aerospace & High Reliability Products
10/3/2014
300 krad
Hirel
50/100 krad
Development
4
JANS & ESCC Bipolar Transistors
Part
Number
2N2222A
2N2907A
2N2920A*
2N3700
2N3810*
2N5153
2N5154
2N5401
2N5551
Type
NPN
PNP
NPN
NPN
PNP
PNP
NPN
PNP
NPN
Vceo
V
40
-60
60
80
-60
-80
80
-150
150
Ic
A
0.8
0.8
0.03
1.0
0.05
5.0
5
0.6
0.6
Hfe
Min
100
100
300
100
150
70
70
60
60
ESCC
Spec
5201-002
5202-001
5207-002
5201-004
5207-005
5204-002
5203-010
5202-014
5201-019
JANS / R
ELDRS
ELDRS
3Q14/1Q15
Now
3Q14/1Q15
3Q14/1Q15
3Q14/1Q15
ELDRS
ELDRS
Package **
LCC-3, UB
LCC3, UB
LCC-6, Flat-8
LCC-3, UB
LCC-6, Flat-8
TO-257, SMD.5
TO-257, SMD.5
LCC-3, UB
LCC-3, UB
Hirel
Y
Y
Y
Y
Y
Y
Y
Y
Y
5
ESCC
100 krad
ELDRS
ELDRS
2Q15
Now
2Q15
Now
Now
ELDRS
ELDRS
• ESCC 100 krad @ Low Dose Rate on Each Wafer
•
•
•
•
•
Each wafer tested @ 0.1 rad/s – 5 Biased + 5 Unbiased parts
RVT @ 50 / 70 / 100 krad + 24h @ 25°C + 168h @ 100°C annealing
Dedicated ESCC Part Number : ex : 5201/002/01R
Guarantee as per MIL-STD-750 Method 1019 (1/Hfe variation based)
Displacement Damage up to 2.1012 neutron/cm2 : Upon request
• 100 krad ELDRS free for all Products Tested so Far
(*) Dual matched transistors
(**) TO Packages not recommended for new designs
Thibault Brunet – Aerospace & High Reliability Products
10/3/2014
5
Very Low Dose Rate Characterization
2N2222A
2N2907A
• 10 mrad/s test on 4 biased & 4 unbiased parts from 1 wafer lot
• 100 mrad/s as per ST Low Dose Rate Specification
Thibault Brunet – Aerospace & High Reliability Products
10/3/2014
66
Very Low Dose Rate Characterization
2N5401
2N5551
• 10 mrad/s test on 4 biased & 4 unbiased parts from 1 wafer lot
• 100 mrad/s as per ST Low Dose Rate Specification
Thibault Brunet – Aerospace & High Reliability Products
10/3/2014
77
16bit Interfaces Series - 3 Volt
• 54VCXH162xxx series - QML-V - 300 krad :
300krad
• No SEE detected under 72MeV/cm²/mg LET ions.
• Cold Spare
• Family Overview :
•
•
•
•
•
54VCXH162244: 16bit Bus interface
LVTH
54VCXH162245: 16bit Bus Transceiver
54VCXHR162245: 16 bit Bus Transceiver with 26 Ω sets
54VCXH162373: 16bit D-type Latch
54VCXH162374: 16bit D-type Flip Flop
• 54VCXH163245 : 3.6v  1.65 volt 16 bit Level Shifter
• Bi Voltage Version of the 54VCXHR162245
• On going Evaluation for Voltage Range down to 1.45 Volt
• 54AC164245 : 4.5/5.5  2.3/3.6 volt 16-bit Level Shifter
• 100 krad (Si) – Cold Spare - No Power Sequencing Constraints
• Propagation delay : 8 ns typical – 20 ns max
Thibault Brunet – Aerospace & High Reliability Products
10/3/2014
8
LVDS Series : QML-V 300 krad
9
RHFLVDSR2D2
RHFLVDS31A
Flat-16
EM : Now
QML : Now
Flat-18
EM : Now
QML : Now
SMD : 5962-98651
SMD : 5962-06202
RHFLVDS2281
RHFLVDS32A
Flat-16
EM : Now
QML : Now
SMD : 5962-98652
Flat-64
EM : Now
QML : 4Q14
SMD : 5968-14234
LVDS Series – 300 krad – QML-V
Key Features
Radiation Hardness
• 400 Mbps (200MHz)
• 150 krad : No drift up to 150 krad
• ANSI TIA/EIA-644 Compliant
• Vcc : 3.3V Typ - 4.8 Volt AMR
• Power consumption : 55 mW
• Disable Pin - High Impedance
• Cold spare on all pins
• Fail Safe
• Large Common Mode
• - 4V to +5V
• 8KV ESD HBM on LVDS I/Os
• 2kV HBM on other I/Os
• CMOS 0.13 µm (HCMOS9A)
• Test still on-going
• SEL free
• @ 67 MeV.cm2/mg @ 125°C – 0° Tilt
• @ 134 MeV.cm2/mg @ 125°C – 60°C Tilt
• Driver :
• SET free @ 67 MeV.cm2/mg @ 25°C
• Cross Section 4.10-7 cm2 @ 25°C
• Receiver :
• SET free @ 32 MeV.cm2/mg @ 25°C
• Cross Section 4.10-7 cm2 @ 25°C
• SEU-free by Design
RHF1009 & RHF100 Voltage References
Adjustable 2.5 to 5.0 Volt / Fixed 1.2 Volt
• Key Features
•
•
•
•
•
•
•
Vout = 2.5 to 5.0 & 1.20V fixed
Ik = 12 mA max / 60µA min
TempCo = 5 ppm/ °C Typ
15 ppm / °C max
Accuracy= 0.15% min
Macro Models : Now
BiCMOS 0.25 µm (HF7CMOS)
EM : Now
QML : Now
K
TID : 300 krad (Si)
ELDRS free @ 100 krad (still going)
SEL free @ 120 MeV.cm2/mg
SET Cross Section < 3 10-4 cm2
Ik
Fixed
A
+V
Flat-10
R1
• Radiation Hardness
•
•
•
•
11
R2
K
C
Ik
Adjus.
Vref
R3
A
EVAL-RHF100
• Undershoot : Configuration Dependent EVAL-RHF1009A
• Report available upon Request
Thibault Brunet – Aerospace & High Reliability Products
10/3/2014
• Key Features :
Very High Speed Comparator
RHR801 Target Spec
• Vcc : 3.0 to 5.0 Volt
• Propagation delay : 7ns typ
EM : Now
QML : Now
• 100mV step + 50mV overdrive
• Rise & Fall Time : 1.1 ns on 10 pF
•
•
•
•
•
•
in
+2.5V to 5.5V
+
-
out
ref
Low consumption : 1.4 mA
Input Offset Voltage : 200µV typ
Equivalent Input Frequency : 72 MHz typ
Specified on Capacitive Load
Macro Models : Now
BiCMOS 0.25µm (HF7CMOS, Crolles)
1kW
10pF
Capacitive load
• Radiation Hardness
•
•
•
•
100 krad (Si) HDR – 30 Krad (Si) LDR
Flat-8
SEL : Immune at 110 MeV.cm²/mg @ 125°C
SET Cross Section < 3.10-6 cm2
SMD : 5962-014225
Report Available upon Request
Thibault Brunet – Aerospace & High Reliability Products 10/3/2014
12
65nm Rad-hard Platform
Key Features
Process
7 copper metallization with 5 thin and 2 thick
Compatible with flip-chip and wire bonding
Radiation
No SEL
- up to LET=60Mev/mg/cm2 @ 125C & Vdd=1.3V
Reliability
Mission profile: 20 years at 110C @ Vdd = 1.3V
High Speed
Enabled
Designed for Space
ESCC
Evaluated
Rad-hard IO
•
•
•
•
BIDIR
I2C
LVDS
cold spare support
Rad-hard Digital
•
•
•
•
• PLL 6 phases
200MHz– 1.2GHz
• HSSL : up to 6.25Gbps
(on-going Hardening)
Std-cells
SRAM
DPRAM (1R + 1W)
ROM
Digital test-chip
HSSL test-chip
Rad-hard process
C65SPACE
Modeling
• 3D TCAD
• Fault injection
• Design in Reliability (DIR)
• Space PDK
• Enhanced reliability
Rad-hard design
techniques
3D TCAD simulation
• Rad-hard schematics
• Rad-hard layout
DRC rules for Space
Rad-hard flip-flop
DiR model development flow
13
65 nm Rad-Hard Platform Status
14
• 4 Running ASIC & ASSP Developments
• ST partnering with ATMEL on some European projects
• CNES and ESA Funded programs
• 1st Tape out 4Q14/1Q15 can be used for 1st Qualification Domain
• ST frontline on some other European projects
• ESA Funded Program – Tape out
• Packaging : In development
• Wire Bonding & Flip Chip Solutions
• Additional Test Chip : Under Evaluation
• Includes New Digital IPs : Serdes, Fast Flip-Flop …
• Electrical Test : 4Q14 – Radiation Test : 1Q15
• First ESCC Qualification : 2015
Thibault Brunet – Aerospace & High Reliability Products
10/3/2014
Developments & Roadmap
Samples within 6 Month
Thibault Brunet – Aerospace & High Reliability Products
10/3/2014
15
Rad-Hard : Development
• Interfaces
• LVDS : Serializer & Deserializer
• Analog :
• Differential Opamp for CCD Sensor
• Low Power 5.5 V Opamp
• Power :
• Power Diodes
• Fast Bipolar Complementary Pair : 60V – 3A
• New Generation Voltage Regulator
• Gate Driver Family
• Configurable Current Limiter
• Point of Load
• PWM Controller
Thibault Brunet – Aerospace & High Reliability Products
10/3/2014
16
New Bipolar Transistors
Linearity – Matching – Radiation Hardness
Part
Number
2ST1360
2ST2360
Vceo
V
NPN 60
PNP -60
Type
Ic
A
0.8
0.8
Ic
Hfe Min
Peak A @ 100 mA
4.0
80
4.0
80
Comment
FT : 130 MHz
FT : 130 MHz
Package
17
Rad
Resistant
Tbd
Tbd
• ST New Bipolar Process
•
•
•
•
Higher Hfe @ constant size
Lower Vcesat @ constant current
Faster Switching
Good preliminary Radiation Test Results : Hfe > 100 after Radiation
• Next Steps :
• 2ST3360 NPN – PNP Pair in Flat-8D : Proto Now
• JANS Flight : 2Q15
Fast
Gate Driver
RESTRICTED
17
Thibault Brunet – Aerospace & High Reliability Products
•
10/3/2014
RH-PM4424
Rad-Hard Low Side MOSFET Drivers
• KEY FEATURES
EM : Now
• 8 / 9 A sink / source capability QML : 3Q15
•
•
•
•
•
•
Vcc : 4.5V to 18V
Power Dissipation: < 1.5W @ 70”C
Under Voltage Lock-Out
Separate Power & Signal Ground
Fast Rrise & Fall : 30 ns typ @ CL=4.7nF
In-out delay time: 110ns typ @ CL =10nF
• +/- 5ns Matching delay
• Vol = 20 mV @ Iout = 1 mA
• Low Consumption: 1.8mA max
• -55 to +150 °C (Recommended : 125°C)
• Radiation Hardness
• 300 krad – ELDRS free at 100 krad
• SEL free at 60 Mev.cm2/mg @ 125°C
• Cross Section 10-7 cm2
• SET Cross Section : 2.10-6 cm2 @ 25°C
• Report Available upon Request
Flat-10 and Flat-16P
BCD6 SOI
Inverting Versions : Samples 4Q14
18
RHFL6000
• Electrical Features
•
•
•
•
•
ST New Generation Voltage Regulator
Proto : Now
QML : 1Q15
Vin : 2.5 to 12 Volt
Vout : 1.2 Volt min
Iout : 2A max
Low Drop : 0.15 typ @ 0.4A
Full set of Protection
• Adjustable Over Current
• Overload Monitoring & Signaling
• Over Temperature
• Accessible Control Loop
• Inhibit Pin : 35 µA max shutdown
• HF2CMOSRH : Same as RHFL4913
• Radiation Targets
• 300 krad ELDRS free
• SEL Free @ 110 MeV.CM2/mg @ 125 °C
• SET Characterized
Flat-16
With connected lid
Thibault Brunet – Aerospace & High Reliability Products
10/3/2014
19
Integrated Current Limiter
Block Diagram
Integrated Current Limiter
Schematics
3rd June, 2010
Thibault Brunet – Aerospace & High Reliability Products
10/3/2014
20
Integrated Current Limiter
Key Features
• PROCESS: BCD6s – option 70V
• Wide Supply Voltage range : 10 V to 52V DC
Proto : Now
QML : 3Q15
• Very Low DC consumption : Total SSP system < 3mA
• Inhibit Pin
• High External Configurability
• Current Limit : 50 mA min
• Trip-Off & Linear
• TON time & TOFF (Trip-Off Mode)
• Around 1 to 100 ms
• 3 modes
• Latched – ReTriggerable - Foldback
Flat-20
• Under Voltage detection & Hysteresis
• 2 pins for Telemetry : analog current - digital & protection status
• Short Circuit Protection
EVAL-RHPMICL1xV1
3 June, 2010
rd
• Floating Ground Compatibility
Thibault Brunet – Aerospace & High Reliability Products
10/3/2014
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22
Thibault Brunet – Aerospace & High Reliability Products
10/3/2014