US2882 - Melexis

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US2882
Bipolar Hall Switch – Very Hiigh Sensitivity
Features and Benefits
Application Exam
mples
Wide operating voltage range frrom 3.5V to
24V
Very high magnetic sensitivity
CMOS technology
Chopper-stabilized amplifier stage
tage
Low current consumption
Open drain output
Thin SOT23 3L and flat TO-92 3L
both RoHS Compliant
packages
Automotive, Consu
umer and Industrial
Solid-state switch
Brushless DC motor
otor commutation
Speed detection
Linear position dete
detection
Angular position d
detection
Proximity detection
on
Ordering Code
Product Code Temperature Code
US2882
E
US2882
K
US2882
L
US2882
E
US2882
K
US2882
L
Legend:
Temperature Code:
Package Code
SE
SE
SE
UA
UA
UA
Option Code
AAA-000
AAA-000
AAA-000
AAA-000
AAA-000
AAA-000
Package Code:
Option Code:
Packing Form:
L for Temperature Range -40°C to 150°C
E for Temperature Range -40°C to 85°C
K for Temperature Range -40°C to 125°C
SE for TSOT, UA for TO-92(Flat)
xxx-000:
000: Standard version
RE for Reel,
Reel BU for Bulk
Ordering example:
US2882ESE
US2882ESE-AAA-000-RE
1 Functional Diagram
Packing Form Code
RE
RE
RE
BU
BU
BU
2 General Descriptio
ion
The Melexis US2882 is a bipollar Hall-effect switch
designed in mixed signal CMO
OS technology.
The device integrates a volltage regulator, Hall
sensor with dynamic offset ccancellation system,
Schmitt trigger and an open-d
drain output driver, all
in a single package.
Thanks to its wide operating
ng voltage range and
extended choice of temperrature range, it is
suitable for use in automot
otive and consumer
applications.
390100288201
Rev 003
The device is delivered in a Thin Small Outline
Transistor (TSOT) for surface
e mount process and
in a Plastic Single In Line (TO
O-92 flat) for throughhole mount.
Both 3-lead packages are RoHS compliant.
Data Sheet
Page 1 of 12
Sep/12
US2882
Bipolar Hall Switch – Very High Sensitivity
Table of Contents
1 Functional Diagram ........................................................................................................ 1
2 General Description ........................................................................................................ 1
3 Glossary of Terms .......................................................................................................... 3
4 Absolute Maximum Ratings ........................................................................................... 3
5 Pin Definitions and Descriptions ................................................................................... 3
6 General Electrical Specifications .................................................................................. 4
7 Magnetic Specifications ................................................................................................. 4
8 Output Behaviour versus Magnetic Pole ...................................................................... 4
9 Detailed General Description ......................................................................................... 5
10 Unique Features ............................................................................................................ 5
11 Performance Graphs .................................................................................................... 6
11.1 Magnetic parameters vs. TA.....................................................................................................................6
11.2 Magnetic parameters vs. VDD...................................................................................................................6
11.3 VDSon vs. TA ..............................................................................................................................................6
11.4 VDSon vs. VDD ............................................................................................................................................6
11.5 IDD vs. TA ..................................................................................................................................................6
11.6 IDD vs. VDD ................................................................................................................................................6
11.7 IOFF vs. TA .................................................................................................................................................7
11.8 IOFF vs. VDD ...............................................................................................................................................7
12 Test Conditions ............................................................................................................. 7
12.1 Supply Current .........................................................................................................................................7
12.2 Output Saturation Voltage .......................................................................................................................7
12.3 Output Leakage Current ..........................................................................................................................7
12.4 Magnetic Thresholds ...............................................................................................................................7
13 Application Information................................................................................................ 8
13.1 Typical Three-Wire Application Circuit ....................................................................................................8
13.2 Two-Wire Circuit ......................................................................................................................................8
13.3 Automotive and Harsh, Noisy Environments Three-Wire Circuit ............................................................8
14 Application Comments ................................................................................................. 8
15 Standard information regarding manufacturability of Melexis products with
different soldering processes........................................................................................... 9
16 ESD Precautions ........................................................................................................... 9
17 Package Information................................................................................................... 10
17.1 SE Package (TSOT-3L).........................................................................................................................10
17.2 UA Package (TO-92 flat) .......................................................................................................................11
18 Disclaimer.................................................................................................................... 12
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Data Sheet
Sep/12
US2882
Bipolar Hall Switch – Very High Sensitivity
3 Glossary of Terms
MilliTesla (mT), Gauss
RoHS
TSOT
ESD
BLDC
Units of magnetic flux density:
1mT = 10 Gauss
Restriction of Hazardous Substances
Thin Small Outline Transistor (TSOT package) – also referred with the Melexis
package code “SE”
Electro-Static Discharge
Brush-Less Direct-Current
4 Absolute Maximum Ratings
Parameter
Symbol
Supply Voltage
VDD
Supply Current
IDD
Output Voltage
VOUT
Output Current
IOUT
Storage Temperature Range
TS
Maximum Junction Temperature
TJ
Table 1: Absolute maximum ratings
Value
28
50
28
50
-50 to 150
165
Units
V
mA
V
mA
°C
°C
Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximumrated conditions for extended periods may affect device reliability.
Operating Temperature Range
Temperature Suffix “E”
Temperature Suffix “L”
Symbol
TA
TA
Value
-40 to 85
-40 to 150
Units
°C
°C
5 Pin Definitions and Descriptions
SE Pin № UA Pin № Name
1
1
VDD
2
3
OUT
3
2
GND
Table 2: Pin definitions and descriptions
SE package
390100288201
Rev 003
Type
Supply
Output
Ground
Function
Supply Voltage pin
Open Drain Output pin
Ground pin
UA package
Page 3 of 12
Data Sheet
Sep/12
US2882
Bipolar Hall Switch – Very High Sensitivity
6 General Electrical Specifications
DC Operating Parameters T A = 25oC, VDD = 3.5V to 24V (unless otherwise specified)
Parameter
Symbol
Supply Voltage
VDD
Supply Current
IDD
Output Saturation Voltage
VDSon
Output Leakage Current
IOFF
Output Rise Time
tr
Output Fall Time
tf
Maximum Switching Frequency
FSW
SE Package Thermal Resistance
RTH
UA Package Thermal Resistance
RTH
Table 3: Electrical specifications
Test Conditions
Operating
B < BRP
IOUT = 20mA, B > BOP
B < BRP, VOUT = 24V
RL = 1kΩ, CL = 20pF
RL = 1kΩ, CL = 20pF
Min
3.5
1.1
Typ
12
2.6
0.11
0.01
0.25
0.25
10
301
200
Single layer (1S) Jedec board
Max
24
5
0.5
10
Units
V
mA
V
µA
µs
µs
KHz
°C/W
°C/W
7 Magnetic Specifications
DC Operating Parameters VDD = 3.5V to 24V (unless otherwise specified)
Parameter
Symbol
Operating Point
BOP
Release Point
BRP
Hysteresis
BHYST
Operating Point
BOP
Release Point
BRP
Hysteresis
BHYST
Table 4: Magnetic specifications
Test Conditions
Min
-3
-6
1.5
-3.5
-6
1.5
E spec. (TA max = 85°C)
L spec. (TA max = 150°C)
Typ
Max
6
3
6
6
3.5
6
Units
mT
mT
mT
mT
mT
mT
Note: For typical values, please refer to the performance graphs in section 11
8 Output Behaviour versus Magnetic Pole
DC Operating Parameters TA = -40 oC to 150 oC, VDD = 3.5V to 24V (unless otherwise specified)
Parameter
Test Conditions (SE) OUT (SE) Test Conditions (UA) OUT (UA)
South pole
B < BRP
High
B > BOP
Low
North pole
B > BOP
Low
B < BRP
High
Table 5: Output behaviour versus magnetic pole
South pole
North pole
North pole
OUT = high
390100288201
Rev 003
OUT = low (VDSon)
SE package
South pole
OUT = high
OUT = low (VDSon)
UA package
Page 4 of 12
Data Sheet
Sep/12
US2882
Bipolar Hall Switch – Very Hiigh Sensitivity
9 Detailed General Descri
ription
Based on mixed signal CMOS technology, Melexis US2882 is a Hall-effect device with verry high magnetic
sensitivity. It allows using generic magnet
agnets, weak magnets or larger air gap.
The chopper-stabilized amplifier uses switched capacitor technique to suppress the offset generally observed
with Hall sensors and amplifiers. The CMOS
CM
technology makes this advanced technique possible
po
and
contributes to smaller chip size and lo
ower current consumption than bipolar technology. The
he small chip size is
also an important factor to minimize th
he effect of physical stress.
This combination results in more stablle magnetic characteristics and enables faster and more
m
precise design.
The wide operating voltage from 3.5V to 24V, “L” and “E” operating temperature range and
d low current
consumption make this device especia
ally suitable for automotive and BLDC motor applica
ations.
The output signal is open-drain type. Such
S
output allows simple connectivity with TTL or CMOS
CM
logic by using
a pull-up resistor tied between a pull-u
up voltage and the device output.
10 Unique Features
The US2882 exhibits bipolar magneticc switching characteristics. Therefore, it operates with
th both south and
north poles.
Typically, the device behaves as a latch with ssymmetric
operating and release switching points (BOP=|B
|BRP|). This means
magnetic fields with equivalent strength and o
opposite direction
drive the output high and low.
Removing the magnetic field (B→0) keeps the
e output in its
previous state. This latching property defines the device as a
magnetic memory.
Latch characteristic
ng points, the device may also behave as a unipolar
ar positive switch (BOP
Depending on the magnetic switching
and BRP strictly positive) or negative switch
s
(BOP and BRP strictly negative). That is the out
utput can be set high
and low by only using one magnetic pole.
p
In such case, removing the magnetic field chang
ges the output level.
Unipolar positive switch character
eristic
Unipolar negative switch char
haracteristic
In latch, positive or negative switch behaviour,
be
a magnetic hysteresis BHYST keeps BOP and
nd BRP separated by
a minimal value. This hysteresis prevents
ents output oscillation near the switching point.
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Data Sheet
Sep/12
US2882
Bipolar Hall Switch – Very High Sensitivity
11 Performance Graphs
11.1 Magnetic parameters vs. TA
11.2 Magnetic parameters vs. VDD
6
6
Brp, VDD=5V
Bop, VDD=12V
Brp, VDD=12V
Bop, VDD=24V
4
Brp, VDD=24V
2
Magnetic field (mT)
Magnetic field (mT)
4
Bop, VDD=5V
0
-2
-4
Bop, Ta=25°
C
Brp, Ta=25°
C
Bop, Ta=85°
C
Bop, Ta=85°
C
Bop, Ta=150°
C
Brp, Ta=150°
C
2
0
-2
-4
-6
-6
-40
-20
0
20
40
60
80
100
120
140
0
5
10
Ta (°
C)
15
20
VDD (Volts)
11.3 VDSon vs. TA
11.4 VDSon vs. VDD
0.5
0.5
0.4
0.4
Ta=-40°
C
Ta=25°
C
Ta=85°
C
Ta=150°
C
VDD=12V
0.3
VDSon (Volts)
VDSon (Volts)
VDD=5V
VDD=24V
0.2
0.1
0.3
0.2
0.1
0
0
-40
-20
0
20
40
60
80
100
120
140
0
5
10
Ta (°
C)
15
20
15
20
VDD (Volts)
11.5 IDD vs. TA
11.6 IDD vs. VDD
6
6
Ta=-40°
C
Ta=25°
C
5
5
VDD=5V
Ta=85°
C
Ta=150°
C
VDD=12V
4
VDD=24V
IDD (mA)
IDD (mA)
4
3
3
2
2
1
1
0
0
-40
-20
0
20
40
60
80
100
120
140
0
Ta (°
C)
390100288201
Rev 003
5
10
VDD (Volts)
Page 6 of 12
Data Sheet
Sep/12
US2882
Bipolar Hall Switch – Very Hiigh Sensitivity
11.7 IOFF vs. TA
11.8 IOFF vs. VDD
30
30
25
25
VDD=5V
Ta=-40°
C
Ta=25°
C
VDD=12V
20
20
Ta=85°
C
Ioff (uA)
Ioff (uA)
VDD=24V
15
Ta=150°
C
15
10
10
5
5
0
0
-40
-20
0
20
40
60
80
100
120
140
0
Ta (°
C)
5
10
15
5
20
VDD (Volts)
12 Test Conditions
Note : DUT = Device Under Test
12.1 Supply Current
12.2 Output Saturation Vo
oltage
12.3 Output Leakage Current
nt
12.4 Magnetic Thresholds
s
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Page 7 of 12
Data Sheet
Sep/12
US2882
Bipolar Hall Switch – Very Hiigh Sensitivity
13 Application Informatio
on
13.1 Typical Three-Wire Applica
lication Circuit
13.2 Two-Wire
re Circuit
13.3 Automotive and Harsh, Noisy
No
Environments
Three-Wire Circuit
Note:
With this circuit, p
precise ON and OFF
currents can be de
detected using only
two connecting wiires.
The resistors RL and
a Rb can be used
to bias the input ccurrent. Refer to the
part specifications
ons for limiting values.
BRP :
BOP :
IOFF = IR + IDD = VDD/Rb + IDD
ION = IOFF + IOUT = IOFF + VDD/RL
14 Application Comments
ts
For proper operation, a 100nF bypass
s capacitor should be placed as close as possible to tthe device between
the VDD and ground pin.
For reverse voltage protection, it is rec
commended to connect a resistor or a diode in series
es with the VDD pin.
When using a resistor, three points are
e important:
- the resistor has to limit the re
everse current to 50mA maximum (VCC / R1 ≤ 50mA))
- the resulting device supply voltage
v
VDD has to be higher than VDD min (VDD = VCCC – R1.IDD)
- the resistor has to withstand
nd the power dissipated in reverse voltage condition (P
PD = VCC 2 / R1)
When using a diode, a reverse current
ent cannot flow and the voltage drop is almost constant
tant (≈0.7V).
Therefore, a 100Ω/0.25W resistor for 5V application and a diode for higher supply voltage
e are recommended.
Both solutions provide the required revverse voltage protection.
When a weak power supply is used or when the device is intended to be used in noisy envi
vironment, it is
recommended that figure 13.3 from
om the Application Information section is used.
The low-pass filter formed by R1 and C1
C and the zener diode Z1 bypass the disturbances or voltage spikes
occurring on the device supply voltage
age VDD. The diode D1 provides additional reverse volta
tage protection.
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Page 8 of 12
Data Sheet
Sep/12
US2882
Bipolar Hall Switch – Very High Sensitivity
15 Standard information regarding manufacturability of Melexis
products with different soldering processes
Our products are classified and qualified regarding soldering technology, solderability and moisture sensitivity
level according to following test methods:
Reflow Soldering SMD’s (Surface Mount Devices)
•
•
IPC/JEDEC J-STD-020
Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices
(classification reflow profiles according to table 5-2)
EIA/JEDEC JESD22-A113
Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing
(reflow profiles according to table 2)
Wave Soldering SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)
•
•
EN60749-20
Resistance of plastic- encapsulated SMD’s to combined effect of moisture and soldering heat
EIA/JEDEC JESD22-B106 and EN60749-15
Resistance to soldering temperature for through-hole mounted devices
Iron Soldering THD’s (Through Hole Devices)
•
EN60749-15
Resistance to soldering temperature for through-hole mounted devices
Solderability SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)
•
EIA/JEDEC JESD22-B102 and EN60749-21
Solderability
For all soldering technologies deviating from above mentioned standard conditions (regarding peak
temperature, temperature gradient, temperature profile etc) additional classification and qualification tests
have to be agreed upon with Melexis.
The application of Wave Soldering for SMD’s is allowed only after consulting Melexis regarding assurance of
adhesive strength between device and board.
Melexis is contributing to global environmental conservation by promoting lead free solutions. For more
information on qualifications of RoHS compliant products (RoHS = European directive on the Restriction Of the
use of certain Hazardous Substances) please visit the quality page on our website:
http://www.melexis.com/quality.aspx
16 ESD Precautions
Electronic semiconductor products are sensitive to Electro Static Discharge (ESD).
Always observe Electro Static Discharge control procedures whenever handling semiconductor products.
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Rev 003
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Data Sheet
Sep/12
US2882
Bipolar Hall Switch – Very Hiigh Sensitivity
17 Package Information
0.127 +0.023
- 0.007
0.891 +/-0.05
0.20
0.15
0.20
1.90 BSC
0.30
0.45
0.95 BSC
see note 3
2.90 BSC
17.1 SE Package (TSOT-3L)
390100288201
Rev 003
Page 10 of 12
Data Sheet
Sep/12
US2882
Bipolar Hall Switch – Very Hiigh Sensitivity
14.5+/-0.5
2.5 min
see note 4
1.65+/-0.10
3.00+/-0.20
17.2 UA Package (TO-92 flat)
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Rev 003
Page 11 of 12
Data Sheet
Sep/12
US2882
Bipolar Hall Switch – Very High Sensitivity
18 Disclaimer
Devices sold by Melexis are covered by the warranty and patent indemnification provisions appearing in its
Term of Sale. Melexis makes no warranty, express, statutory, implied, or by description regarding the
information set forth herein or regarding the freedom of the described devices from patent infringement.
Melexis reserves the right to change specifications and prices at any time and without notice. Therefore, prior
to designing this product into a system, it is necessary to check with Melexis for current information. This
product is intended for use in normal commercial applications. Applications requiring extended temperature
range, unusual environmental requirements, or high reliability applications, such as military, medical lifesupport or life-sustaining equipment are specifically not recommended without additional processing by
Melexis for each application.
The information furnished by Melexis is believed to be correct and accurate. However, Melexis shall not be
liable to recipient or any third party for any damages, including but not limited to personal injury, property
damage, loss of profits, loss of use, interrupt of business or indirect, special incidental or consequential
damages, of any kind, in connection with or arising out of the furnishing, performance or use of the technical
data herein. No obligation or liability to recipient or any third party shall arise or flow out of Melexis’ rendering
of technical or other services.
© 2012 Melexis NV. All rights reserved.
For the latest version of this document, go to our website at
www.melexis.com
Or for additional information contact Melexis Direct:
Europe, Africa, Asia:
Phone: +32 1367 0495
E-mail: [email protected]
America:
Phone: +1 248 306 5400
E-mail: [email protected]
ISO/TS 16949 and ISO14001 Certified
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Rev 003
Page 12 of 12
Data Sheet
Sep/12
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