THDT6511D
®
Application Specific Discretes TRANSIENT
A.S.D.™
VOLTAGE SUPPRESSOR
FOR SLIC PROTECTION
FEATURES
■
■
■
■
■
■
DUAL ASYMETRICAL TRANSIENT SUPPRESSOR
PEAK PULSE CURRENT : IPP = 40A, 10/100µs
HOLDING CURRENT : 150 mA min.
BREAKDOWN VOLTAGE : 65 V min.
LOW DYNAMIC CHARACTERISTICS
STAND CCITT K20 AND LSSGR
SO-8
DESCRIPTION
This device has been especially designed to
protect subscriber line cards against overvoltage.
Two diodes clamp positive overloads while
negative surges are suppressed by two protection
thyristors.
A particular attention has been given to the internal
wire bonding. The “4-point” configuration ensures
a reliable protection, eliminating overvoltages introduced by the parasitic inductances of the wiring
(Ldi/dt), especially for very fast transient
overvoltages.
(s)
t
c
u
d
o
r
P
e
VDE 0433 :
t
e
l
o
VDE 0878 :
I3124 :
10/700µs
5/310µs
10/700µs
5/310µs
1.2/50µs
1/20µs
0.5/700µs
0.2/310µs
2/10µs
2/10µs
s
b
O
FCC part 68 :
BELLCORE
TR-NWT-001089 :
2/10µs
2/10µs
10/1000µs
10/1000µs
1kV
38A
2kV
50A
1.5kV
40A
1kV
38A
2.5kV
125A (*)
e
t
le
TIP 1
o
s
b
O
-
COMPLIES WITH THE FOLLOWING STANDARDS :
CCITT K20 :
SCHEMATIC DIAGRAM
c
u
d
)
s
t(
o
r
P
8 TIP
GND 2
7 GND
GND 3
6 GND
RING 4
5 RING
2.5kV
125A (*)
1kV
40A (*)
(*) with series resistors or PTC.
August 2001 - Ed: 2
1/6
THDT6511D
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
Parameter
IPP
Peak pulse current
(see note 1)
ITSM
Non repetitive surge peak on-state current
F = 50 Hz
ITSM
F = 50 Hz, 60 x 1 s, 2 mn between pulse
Tstg
Tj
Storage temperature range
Maximum junction temperature
TL
Maximum lead temperature for soldering during 10s
Value
Unit
10/1000µs
5/310µs
2/10µs
40
50
125
A
t = 300 ms
t=1s
t=5s
10
3.5
1
A
1
A
- 55 to + 150
150
°C
260
°C
% I PP
Note 1 : Pulse waveform :
10/1000µs tr=10µs
5/310µs
tr=5µs
2/10µs
tr=2µs
tp=1000µs
tp=310µs
tp=10µs
100
c
u
d
50
0
tr
THERMAL RESISTANCES
Symbol
Rth (j-a)
Junction to ambient
)
s
(
ct
Stand-off voltage
IRM
Leakage current at stand-off voltage
VBR
Breakdown voltage
VBO
Breakover voltage
t
e
l
o
s
b
O
VF
2/6
r
P
e
Holding current
VBO
Peak forward voltage
IBO
Breakover current
IPP
Peak pulse current
C
Capacitance
αT
Temperature coefficient
170
°C/W
VF
VBR
V
VRM
IRM
Forward voltage drop
VFP
Unit
IF
Parameter
VRM
Value
I
u
d
o
Symbol
t
tp
o
s
b
O
-
Parameter
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C)
IH
e
t
le
o
r
P
)
s
t(
IH
IBO
Ipp
THDT6511D
1 - PARAMETERS RELATED TO DIODE LINE / GND
Symbol
Test conditions
Min.
Typ.
tp = 100 µs
VF
IF = 1 A
VFP
see curve fig. 1
Max.
Unit
2
V
NA
NA
NA
V
Min.
Typ.
Max.
Unit
NA : Non Available
2 - PARAMETERS RELATED TO PROTECTION THYRISTOR
Symbol
VBR
Tests conditions
IR = 1mA
65
68
VBO
IRM
VRM = 63 V
IBO
tp = 100 µs
IBO
F = 50 Hz
RG = 600 Ω
110
450
c
u
d
500
150
αT
VD = 100 mVRMS
dV/dt
85
100
IH
C
V
F = 1KHz
Linear ramp up to 67 % of VBR
)
s
(
ct
o
s
b
O
-
e
t
le
5
o
r
P
V
)
s
t(
µA
mA
mA
mA
10-4/°C
15
500
pF
kV / µs
u
d
o
r
P
e
t
e
l
o
s
b
O
3/6
THDT6511D
DYNAMIC CHARACTERISTICS : VFP and VBO
Figure 1 :
60
10
250 ns
10 us
5
2
10 ms
-85
t
1 us
-100
c
u
d
200 ns
-130
e
t
le
o
r
P
Under lightning and power crossing test, the device limits the transient voltage to the values
indicated in the figure
LSSGR TEST DIAGRAM
Figure 2 :
)
s
(
ct
u
d
o
r
P
e
o
s
b
O
-
THDT6511D
t
e
l
o
s
b
O
To stand the LSSGR test requirements, Rp must be  15 Ω
4/6
)
s
t(
THDT6511D
TYPICAL APPLICATION
RING
GENERATOR
- Vbat
PTC
LINE A
TIP
T
E
S
T
RING
RELAY
R
E
L
A
Y
LINE B
PTC
e
t
le
THDT6511D
(s)
RING
o
s
b
O
-
t
c
u
P1
d
o
r
P
e
t
e
l
o
Line B
o
r
P
Tip
D1
s
b
O
c
u
d
THBT200S
Line A
)
s
t(
Integrated
SLIC
- For positive surges versus GND (TIP), diode D1
will conduct.
- For negative surges versus GND (TIP),
protection device P1 will trigger at maximum
voltage equal to VBO.
Ring
5/6
THDT6511D
ORDER CODE
THDT
65
1
1
D
RL
Tape & reel
Asymmetrical Trisil
Low Dynamic Characteristics
Breakdown Voltage
Version
SO-8 Package
PACKAGE MECHANICAL DATA.
SO-8 Plastic
DIMENSIONS
REF.
Millimetres
Min.
)
s
(
ct
u
d
o
A
a1
a2
b
b1
C
c1
D
E
e
e3
F
L
M
S
0.1
0.35
0.19
e
t
le
4.8
5.8
o
s
b
O
-
3.8
0.4
Inches
Typ. Max. Min.
1.75
0.25 0.004
1.65
0.48 0.014
0.25 0.007
0.50
45° (typ)
5.0 0.189
6.2 0.228
1.27
3.81
4.0 0.15
1.27 0.016
0.6
8° (max)
c
u
d
o
r
P
)
s
t(
Typ. Max.
0.069
0.010
0.065
0.019
0.010
0.020
0.197
0.244
0.050
0.150
0.157
0.050
0.024
r
P
e
MARKING : DT651D
PACKAGING : Products supplied in antistatic tube or tape and reel.
Weight : 0.08g
t
e
l
o
s
b
O
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
6/6