GaN LED
S-13CBAUP
◆Applications：
◆Product characters：
●Display
●Super high brightness with long life.
●All the chips are 100% tested and sorted.
●High uniformity with wavelength and brightness.
◆Mechanical Specification：
Dimension
●Chip size：13milx9mil(315±38μm×215±38μm)
●Thickness：4.0mil (100 ± 15μm)
●P bonding pad：3.2mil (80 ± 10μm)
●N bonding pad：3.2mil (80 ± 10μm)
Metallization
●Topside P electrode:Au
●Topside N electrode:Au
◆Electro-optical Characteristics at 22℃：
Parameter
Symbol
Condition
Min
Vf1
If =20mA
2.8
Vf4
If =1μA
1.8
Reverse current
Ir
Vr=-10V
Dominant wavelength
λd
If =20mA
Spectral half-width
∆λ
If =20mA
Typ
Max
Unit
3.4
V
Forward voltage
J1
Radiant flux
IV
J2
If =20mA
K1
462.5
2.6
V
1
μA
472.5
nm
24
nm
200
220
220
240
240
270
Mcd
Note：
●GaN LED chip is an electrostatic sensitive device,so ESD protection during chip handling is recommended.
●The wavelength span is 2.5nm，the dominant wavelength maintains a tolerance of ±1.0nm.
●All measurements are done with San’an electro-optical testing equipment.
●Radiant flux measurement allows a tolerance of±10%.
●Customer’s special requirments are also welcome.
E2
GaN LED
S
S-13CBAUP
◆
◆Absolu
ute Maxiimum Ra
atings：
Parameter
Symbol
Condition
Rating
Unit
Forw
ward DC currrent
If
Tc = 22℃
≤30
mA
Junction temperature
Tj
----
≤115
˚C
chip
-40~+85
˚C
chip--on-tape/storrage
0~40
˚C
chip-on--tape/transpo
ortation
-20~+65
˚C
----
280(<10s)
˚C
Stora
age temperatture
Temperatu
ure during pa
ackaging
Tstg
----
Note：
N
●
●Maximum
ra
atings are pa
ackage depen
ndent. The above
a
maximum ratings were
w
determined using a Printed Circ
cuit
B
Board(PCB)
w
without
an en
ncapsulant. Stresses
S
in excess
e
of the
e absolute ma
aximum ratin
ngs such as forward
f
curre
ent
and junction te
emperature may
m cause da
amage to the LED.
●
●The
LED is not
n designed
d to be driven
n in reverse bias, we suggest it should be operated under forwarrd current.
◆
◆Charact
teristic Curves：
C
：
Fig.1-Re
elative Luminous Intensity
y vs. Forward
d Current
Fig.3--Relative Inte
ensity (@20m
mA) vs. Ambie
ent
Fig.2-Forrward Current vs. Forward
d Voltage
Fig.4- Forrward Voltage
e (@20mA) vs
s. Ambient
Temperrature
Te
emperature
Fig.5
5- Dominant Wavelength
W
(@
@20mA) vs.
Fig.6F
Maximum Driving F
Forward DC Current
C
vs. Am
mbient
Ambien
nt Temperaturre
ature ( Deratin
ng based on Tj max=115℃
℃)
Tempera
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