TIP120/121/122
TIP120/121/122
Medium Power Linear Switching Applications
• Complementary to TIP125/126/127
TO-220
1
1.Base
2.Collector
3.Emitter
NPN Epitaxial Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
: TIP120
: TIP121
: TIP122
Value
60
80
100
Units
V
V
V
60
80
100
V
V
V
VCEO
Collector-Emitter Voltage : TIP120
: TIP121
: TIP122
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
5
A
ICP
Collector Current (Pulse)
8
A
IB
Base Current (DC)
120
mA
PC
Collector Dissipation (Ta=25°C)
2
W
Collector Dissipation (TC=25°C)
65
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Equivalent Circuit
C
B
R1
R2
R1 ≅ 8kΩ
R 2 ≅ 0.12 k Ω
E
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
ICEO
ICBO
Parameter
Collector-Emitter Sustaining Voltage
: TIP120
: TIP121
: TIP122
Test Condition
IC = 100mA, IB = 0
Min.
Max.
60
80
100
Units
V
V
V
Collector Cut-off Current
: TIP120
: TIP121
: TIP122
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
0.5
0.5
0.5
mA
mA
mA
: TIP120
: TIP121
: TIP122
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
0.2
0.2
0.2
mA
mA
mA
2
mA
2.0
4.0
V
V
Collector Cut-off Current
IEBO
Emitter Cut-off Current
VBE = 5V, IC = 0
hFE
* DC Current Gain
VCE = 3V,IC = 0.5A
VCE = 3V, IC = 3A
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 3A, IB = 12mA
IC = 5A, IB = 20mA
VBE(on)
* Base-Emitter ON Voltage
VCE = 3V, IC = 3A
2.5
V
Cob
Output Capacitance
VCB = 10V, IE = 0, f = 0.1MHz
200
pF
1000
1000
* Pulse Test : PW≤300µs, Duty cycle ≤2%
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TIP120/121/122
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Typical characteristics
10000
hFE, DC CURRENT GAIN
VCE = 4V
1000
100
0.1
1
10
3.5
IC = 250IB
3.0
2.5
2.0
1.5
V BE(sat)
1.0
V CE(sat)
0.5
0.1
IC[A], COLLECTOR CURRENT
1
10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
10
10
0.1
1
10
IC[A], COLLECTOR CURRENT
100
1
0.1
TIP120
TIP121
TIP122
0.01
1
VCB[V], COLLECTOR-BASE VOLTAGE
VEB[V], EMITTER-BASE VOLTAGE
s
5m
Cob
Cib
s
1m
100
C
D
Cob[pF] Cib[pF], CAPACITANCE
s
0u
10 us
0
50
f=0.1MHz
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Output and Input Capacitance
vs. Reverse Voltage
Figure 4. Safe Operating Area
80
PC[W], POWER DISSIPATION
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TIP120/121/122
Package Demensions
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
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©2001 Fairchild Semiconductor Corporation
Rev. H3