Order this document
by BC556/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
1
2
Symbol
BC
556
BC
557
BC
558
Unit
Collector – Emitter Voltage
VCEO
–65
–45
–30
Vdc
Collector – Base Voltage
VCBO
–80
–50
–30
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watt
mW/°C
TJ, Tstg
– 55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
Rating
Operating and Storage Junction
Temperature Range
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
–65
–45
–30
—
—
—
—
—
—
–80
–50
–30
—
—
—
—
—
—
–5.0
–5.0
–5.0
—
—
—
—
—
—
—
—
—
—
—
—
–2.0
–2.0
–2.0
—
—
—
–100
–100
–100
–4.0
–4.0
–4.0
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –100 µAdc)
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
Collector–Emitter Leakage Current
(VCES = –40 V)
(VCES = –20 V)
(VCES = –20 V, TA = 125°C)
V(BR)CEO
BC556
BC557
BC558
V
V(BR)CBO
BC556
BC557
BC558
V
V(BR)EBO
BC556
BC557
BC558
V
ICES
BC556
BC557
BC558
BC556
BC557
BC558
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
nA
µA
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Symbol
Characteristic
Min
Typ
Max
—
—
—
120
120
120
120
180
420
—
—
—
90
150
270
—
—
—
170
290
500
120
180
300
—
—
—
500
800
800
220
460
800
—
—
—
—
—
—
–0.075
–0.3
–0.25
–0.3
–0.6
–0.65
—
—
–0.7
–1.0
—
—
–0.55
—
–0.62
–0.7
–0.7
–0.82
—
—
—
280
320
360
—
—
—
—
3.0
6.0
—
—
—
2.0
2.0
2.0
10
10
10
125
125
125
240
450
—
—
220
330
600
500
900
260
500
900
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –10 µAdc, VCE = –5.0 V)
(IC = –2.0 mAdc, VCE = –5.0 V)
(IC = –100 mAdc, VCE = –5.0 V)
hFE
BC557A
BC556B/557B/558B
BC557C
BC556
BC557
BC558
BC557A
BC556B/557B/558B
BC557C
BC557A
BC556B/557B/558B
BC557C
Collector – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –10 mAdc, IB = see Note 1)
(IC = –100 mAdc, IB = –5.0 mAdc)
VCE(sat)
Base – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –100 mAdc, IB = –5.0 mAdc)
VBE(sat)
Base–Emitter On Voltage
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
(IC = –10 mAdc, VCE = –5.0 Vdc)
VBE(on)
—
V
V
V
SMALL–SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mA, VCE = –5.0 V, f = 100 MHz)
fT
BC556
BC557
BC558
Output Capacitance
(VCB = –10 V, IC = 0, f = 1.0 MHz)
Noise Figure
(IC = –0.2 mAdc, VCE = –5.0 V,
RS = 2.0 kW, f = 1.0 kHz, ∆f = 200 Hz)
Small–Signal Current Gain
(IC = –2.0 mAdc, VCE = –5.0 V, f = 1.0 kHz)
Cob
MHz
NF
BC556
BC557
BC558
dB
hfe
BC556
BC557/558
BC557A
BC556B/557B/558B
BC557C
pF
—
Note 1: IC = –10 mAdc on the constant base current characteristics, which yields the point IC = –11 mAdc, VCE = –1.0 V.
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC557/BC558
1.5
–1.0
TA = 25°C
–0.9
VCE = –10 V
TA = 25°C
VBE(sat) @ IC/IB = 10
–0.8
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
1.0
0.7
0.5
–0.7
VBE(on) @ VCE = –10 V
–0.6
–0.5
–0.4
–0.3
–0.2
0.3
VCE(sat) @ IC/IB = 10
–0.1
0.2
–0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50
IC, COLLECTOR CURRENT (mAdc)
0
–0.1 –0.2
–100 –200
Figure 1. Normalized DC Current Gain
–1.2
IC =
–10 mA
IC = –50 mA
IC = –200 mA
IC = –100 mA
IC = –20 mA
–0.4
–0.02
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR–EMITTER VOLTAGE (V)
TA = 25°C
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
–10 –20
–0.1
–1.0
IB, BASE CURRENT (mA)
–0.2
10
Cib
7.0
TA = 25°C
5.0
Cob
3.0
2.0
1.0
–0.4 –0.6
–1.0
–2.0
–4.0 –6.0
–10
–20 –30 –40
–10
–1.0
IC, COLLECTOR CURRENT (mA)
–100
Figure 4. Base–Emitter Temperature Coefficient
f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
Figure 3. Collector Saturation Region
C, CAPACITANCE (pF)
–100
1.0
–1.6
0
–50
Figure 2. “Saturation” and “On” Voltages
–2.0
–0.8
–0.5 –1.0 –2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mAdc)
400
300
200
150
VCE = –10 V
TA = 25°C
100
80
60
40
30
20
–0.5
–1.0
–2.0 –3.0
–5.0
–10
–20
–30
–50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
BC556
TJ = 25°C
VCE = –5.0 V
TA = 25°C
–0.8
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
–1.0
2.0
1.0
0.5
VBE(sat) @ IC/IB = 10
–0.6
VBE @ VCE = –5.0 V
–0.4
–0.2
0.2
VCE(sat) @ IC/IB = 10
0
–0.2
–1.0 –2.0 –5.0 –10 –20 –50 –100 –200
IC, COLLECTOR CURRENT (AMP)
–0.1 –0.2
–0.5
–50 –100 –200
–1.0 –2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
–2.0
–1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. DC Current Gain
–1.6
–1.2
IC =
–10 mA
–20 mA
–50 mA
–100 mA –200 mA
–0.8
–0.4
TJ = 25°C
0
–0.02
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0
IB, BASE CURRENT (mA)
–5.0
–10
–20
–1.4
–1.8
–2.6
–3.0
–0.2
f T, CURRENT–GAIN – BANDWIDTH PRODUCT
C, CAPACITANCE (pF)
TJ = 25°C
Cib
10
8.0
Cob
4.0
2.0
–0.1 –0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
4
–0.5 –1.0
–50
–2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mA)
–100 –200
Figure 10. Base–Emitter Temperature Coefficient
40
6.0
–55°C to 125°C
–2.2
Figure 9. Collector Saturation Region
20
θVB for VBE
–50 –100
500
VCE = –5.0 V
200
100
50
20
–100
–1.0
–10
IC, COLLECTOR CURRENT (mA)
Figure 12. Current–Gain – Bandwidth Product
Motorola Small–Signal Transistors, FETs and Diodes Device Data
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
SINGLE PULSE
0.1
0.07
0.05
SINGLE PULSE
t1
t2
DUTY CYCLE, D = t1/t2
0.03
0.02
0.01
0.1
ZθJC(t) = (t) RθJC
RθJC = 83.3°C/W MAX
ZθJA(t) = r(t) RθJA
RθJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
P(pk)
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
Figure 13. Thermal Response
–200
IC, COLLECTOR CURRENT (mA)
1s
3 ms
–100
TA = 25°C
–50
TJ = 25°C
BC558
BC557
BC556
–10
–5.0
–2.0
–1.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from
the data in Figure 13. At high case or ambient temperatures, thermal
limitations will reduce the power than can be handled to values less
than the limitations imposed by second breakdown.
–5.0
–10
–30 –45 –65 –100
VCE, COLLECTOR–EMITTER VOLTAGE (V)
Figure 14. Active Region — Safe Operating Area
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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6
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC556/D