2N7000
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
General Description
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The Supertex 2N7000 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Complementary N- and P-Channel devices
Applications
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Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Device
Package
Option
BVDSS/BVDGS
RDS(ON)
ID(ON)
(V)
(max)
(Ω)
2N7000-G
TO-92
60
5.0
75
(min)
(mA)
-G indicates package is RoHS compliant (‘Green’)
Pin Configuration
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
BVDSS
Drain-to-gate voltage
BVDGS
Gate-to-source voltage
±30V
Operating and storage temperature
Soldering temperature*
DRAIN
GATE
TO-92
-55°C to +150°C
+300°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
SOURCE
2N
7 0 0 0
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92
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2N7000
Thermal Characteristics
ID
ID
Power Dissipation
θjc
θja
IDR†
IDRM
Package
(continuous)†
(mA)
(pulsed)
(mA)
@TC = 25OC
(W)
( C/W)
( C/W)
(mA)
(mA)
TO-92
200
500
1.0
125
170
200
500
O
O
Notes:
† ID (continuous) is limited by max rated Tj.
Electrical Characteristics (T = 25°C unless otherwise specified)
A
Sym
Parameter
BVDSS
VGS(th)
IGSS
Min
Typ
Max
Units
Drain-to-source breakdown voltage
60
-
-
V
VGS = 0V, ID = 10µA
Gate threshold voltage
0.8
-
3.0
V
VGS = VDS, ID = 1.0mA
-
-
10
nA
VGS = ±15V, VDS = 0V
-
-
1.0
µA
VGS = 0V, VDS = 48V
-
-
1.0
mA
VGS = 0V, VDS = 48V,
TA = 125OC
mA
VGS = 4.5V, VDS = 10V
Gate body leakage current
IDSS
Zero gate voltage drain current
ID(ON)
On-state drain current
75
-
-
RDS(ON)
Static drain-to-source
on-state resistance
-
-
5.3
-
-
5.0
100
-
-
GFS
Forward transconductance
CISS
Input capacitance
-
-
60
COSS
Common source output capacitance
-
-
25
CRSS
Reverse transfer capacitance
-
-
5
t(ON)
Turn-on time
-
-
10
t(OFF)
Turn-off time
-
-
10
VSD
Diode forward voltage drop
-
0.85
-
Ω
mmho
Conditions
VGS = 4.5V, ID = 75mA
VGS = 10V, ID = 500mA
VDS = 10V, ID = 200mA
pF
VGS = 0V, VDS = 25V,
f = 1.0MHz
ns
VDD = 15V, ID = 500mA,
RGEN = 25Ω
V
VGS = 0V, ISD = 200mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
90%
INPUT
0V
PULSE
GENERATOR
10%
t(ON)
td(ON)
VDD
VDD
t(OFF)
tr
10%
td(OFF)
RL
RGEN
tF
D.U.T.
10%
INPUT
OUTPUT
0V
90%
OUTPUT
90%
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2
2N7000
Typical Performance Curves
Output Characteristics
2.5
Saturation Characteristics
2.5
VGS =10V
8V
2.0
VGS = 10V
2.0
1.5
ID (amperes)
ID (amperes)
8V
6V
1.0
4V
0.5
1.5
6V
1.0
4V
0.5
0
0
0
10
20
40
30
50
0
2
4
VDS (volts)
8
10
Power Dissipation vs. Case Temperature
Transconductance vs. Drain Current
1.0
2.0
VDS = 25V
0.8
0.6
PD (watts)
GFS (siemens)
6
VDS (volts)
TA = -55OC
25OC
0.4
TO-92
1.0
125OC
0.2
0
0
0
0.2
0.4
0.6
0.8
0
1.0
25
50
125
150
Thermal Resistance (normalized)
1.0
TO-92 (pulsed)
TO-92 (DC)
ID (amperes)
100
Thermal Response Characteristics
Maximum Rated Safe Operating Area
1.0
0.1
0.01
0.001
75
TC (OC)
ID (amperes)
TC = 25OC
0.1
0.8
0.6
0.4
TO-92
0.2
PD = 1W
TC = 25 OC
0
1.0
10
VDS (volts)
100
0.001
0.01
0.1
1
tp (seconds)
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3
10
2N7000
Typical Performance Curves (cont.)
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
5.0
1.1
VGS = 4.5V
RDS(ON) (ohms)
BVDSS (normalized)
4.0
1.0
VGS = 10V
3.0
2.0
1.0
0.9
0
0
50
100
150
0.5
0
Transfer Characteristics
2.5
1.9
1.4
O
VGS(th) (normalized)
TA = -55 � C
25 C
ID (amperes)
2.5
V(th) and RDS Variation with Temperature
O
1.5
O
125 C
1.0
0.5
1.6
RDS @ 10V, 1.0A
1.2
1.3
V(th) @ 1mA
1.0
1.0
0.8
0.7
0.4
0.6
0
0
2
4
6
8
10
-50
0
50
VGS (volts)
100
150
Tj (OC)
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
100
10
f = 1MHz
VDS = 10V
8
75
40V
VGS (volts)
C (picofarads)
2.0
1.6
VDS = 25V
2.0
1.5
1.0
ID (amperes)
Tj ( OC)
50
CISS
25
COSS
0
10
20
30
VDS (volts)
80 pF
4
2
CRSS
0
6
40 pF
0
40
0
0.2
0.4
0.6
0.8
1.0
QG (nanocoulombs)
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4
RDS(ON) (normalized)
-50
2N7000
3-Lead TO-92 Package Outline (N3)
D
A
1
Seating Plane
2
3
L
b
e1
e
c
Side View
Front View
E1
E
3
1
2
Bottom View
Symbol
Dimensions
(inches)
A
b
c
D
E
E1
e
e1
L
MIN
.170
.014†
.014†
.175
.125
.080
.095
.045
.500
NOM
-
-
-
-
-
-
-
-
-
MAX
.210
.022†
.022†
.205
.165
.105
.105
.055
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the original JEDEC drawing. The value listed is for reference only.
† This dimension is a non-JEDEC dimension.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version D080408.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an
adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the
replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications
are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com.
©2008
All rights reserved. Unauthorized use or reproduction is prohibited.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
Doc.# DSFP-2N7000
B091008
5