SBB-5089Z
Product Description
Sirenza Microdevices’ SBB-5089Z is a high performance InGaP HBT MMIC
amplifier utilizing a Darlington configuration with an active bias network.
The active bias network provides stable current over temperature and
process Beta variations. Designed to run directly from a 5V supply, the
SBB-5089Z does not require a dropping resistor as compared to typical
Darlington amplifiers. The SBB-5089Z product is designed for high linearity
5V gain block applications that require small size and minimal external
components. It is internally matched to 50 ohms.
The matte tin finish on Sirenza’s lead-free package utilizes a post annealing
process to mitigate tin whisker formation and is RoHS compliant per EU
Directive 2002/95. This package is also manufactured with green molding
compounds that contain no antimony trioxide nor halogenated fire retardants.
Gain & Return Loss vs. Frequency (w/ BiasTees)
30
20
S21
dB
10
0.05-6 GHz, Cascadable Active Bias
InGaP HBT MMIC Amplifier
Pb
RoHS Compliant
& Green Package
Product Features
•
•
•
•
•
•
•
Wideband Flat Gain to 4GHz: +/-1.1dB
P1dB = 20.4 dBm @ 1950MHz
Single Fixed 5V Supply
Robust 1000V ESD, Class 1C
Patented Thermal Design & Bias Circuit
Low Thermal Resistance
MSL 1 moisture rating
Applications
0
•
•
•
•
-10
S22
-20
S11
-30
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
Wideband Intrumentation
Wireless Data, Satellite Terminals
-40
0
1
2
3
Frequency (GHz)
Symbol
S21
P1dB
IP3
Bandwidth
4
5
Parameters
Small Signal Gain
6
Units
Frequency
Min.
Typ.
Max.
dB
850 MHz
1950 MHz
6000 MHz
19
18.5
14.5
20.5
20
16
21.5
Output Power at 1 dB Compression
dBm
850 MHz
1950 MHz
19
20.5
20.5
Third Order Intercept Point
dBm
850 MHz
1950 MHz
33
38.5
35
S11, S22: Minimum 10dB Return Loss (typ.)
MHz
22
17.5
3000
S11
Input Return Loss
dB
1950 MHz
10
14
S22
Output Return Loss
dB
1950 MHz
10
14
S12
Reverse Isolation
dB
1950 MHz
23.3
NF
Noise Figure
dB
1950 MHz
4.2
4.9
VD
Device Operating Voltage
V
5
5.25
ID
Device Operating Current
mA
75
92
RTH, j-l
Thermal Resistance (junction - lead)
Test Conditions:
VD = 5V
T L = 25°C
65
°C/W
ID = 75 mA Typ.
ZS = Z L = 50 Ohms
69.9
OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm
Tested with Bias Tees
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-103839 Rev F
SBB-5089Z 0.05-6 GHz Cascadable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies (With 0.5-3.5 GHz Application Circuit)
Frequency (MHz)
Symbol
S21
Parameter
Small Signal Gain
Unit
500
850
1950
2500
3500
4000
dB
20.8
20.8
20.1
19.8
18.7
17.8
OIP3
Output Third Order Intercept Point
dBm
38.6
39.2
34.9
32.8
29.4
26.8
P1dB
Output Power at 1dB Compression
dBm
20.5
20.4
20.4
19.4
16.9
14.7
S11
Input Return Loss
dB
27.2
22.7
14.6
12.9
10.6
11.6
S22
Output Return Loss
dB
31.8
21.5
13.5
12.0
13.5
27.5
S12
Reverse Isolation
dB
22.7
22.8
23.4
23.7
24.7
25.7
dB
3.8
3.8
4.1
4.1
4.3
4.6
Noise Figure
TestNF
Conditions:
ID = 75 mA Typ.
VCC = 5V
Test Conditions:
TL = 25°C
OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
Noise Figure @ 25C
8
7
6
dB
5
4
3
2
Avg. BiasTee
1
Avg. AppCkt
P1dB vs. Frequency with App. Ckt.
25
0
0.5
1
1.5
2
2.5
3
3.5
20
4
dBm
Frequency (GHz)
15
OIP3 vs. Frequency with App. Ckt.
45
P1dB 25C
10
P1dB -40C
P1dB 85C
40
5
dBm
35
0.5
30
25
1
1.5
2
2.5
Frequency (GHz)
3
3.5
4
IP3 25C
IP3 -40C
20
IP3 85C
15
0.5
1
303 S. Technology Ct.
Broomfield, CO 80021
1.5
2
2.5
Frequency (GHz)
3
3.5
4
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-103839 Rev F
SBB-5089Z 0.05-6 GHz Cascadable MMIC Amplifier
S-Parameters over Temperature (Bias Tee)
S11 vs. Frequency
0
S21 vs. Frequency
25
20
-10
dB
dB
15
-20
10
25C
-30
25C
-40C
-40C
5
85C
85C
-40
0
0
1
2
3
Frequency (GHz)
4
5
6
0
S12 vs. Frequency
-10
0
-15
-10
1
2
3
4
Frequency (GHz)
5
6
5
6
S22 vs. Frequency
-20
dB
dB
-20
-25
-30
-30
25C
25C
-35
-40C
-40
-40C
85C
85C
-40
-50
0
1
2
3
4
Frequency (GHz)
5
6
0
1
2
3
4
Frequency (GHz)
Device Current over Temperature (Bias Tee)
Id vs. Temperature
Current vs. Voltage Over Temp. (Bias Tees)
105
84
82
Current (mA)
Current (mA)
95
80
85
75
25C
65
-40C
85C
55
78
-40C
303 S. Technology Ct.
Broomfield, CO 80021
25C
Temperature
85C
Phone: (800) SMI-MMIC
3
4.5
4.6
4.7
4.8
4.9
5
5.1
Voltage (V)
5.2
5.3
5.4
5.5
http://www.sirenza.com
EDS-103839 Rev F
SBB-5089Z 0.05-6 GHz Cascadable MMIC Amplifier
0.5 to 3.5GHz Application Circuit S-Parameters over Temperature
S11 vs. Frequency
0
S21 vs. Frequency
25
20
-10
dB
dB
15
-20
25C
10
-40C
25C
-30
85C
-40C
5
85C
-40
0
0
1
2
Frequency (GHz)
3
4
0
S12 vs. Frequency
-10
0
-15
-10
2
Frequency (GHz)
3
4
3
4
S22 vs. Frequency
-20
dB
dB
-20
1
-25
-30
-30
25C
-35
25C
-40
-40C
-40C
85C
85C
-50
-40
0
1
2
Frequency (GHz)
3
0
4
1
2
Frequency (GHz)
Device Current over Temperature (w/App. Ckt.)
Current vs. Voltage Over Temp. (App. Ckt.)
Id vs. Temperature
105
84
Current (mA)
Current (mA)
95
82
80
85
75
25C
65
-40C
85C
55
78
4.5
-40C
303 S. Technology Ct.
Broomfield, CO 80021
25C
Temperature
85C
Phone: (800) SMI-MMIC
4
4.6
4.7
4.8
4.9
5
5.1
5.2
5.3
5.4
5.5
Voltage (V)
http://www.sirenza.com
EDS-103839 Rev F
SBB-5089Z 0.05-6 GHz Cascadable MMIC Amplifier
Application Schematic
Application Circuit Element Values
Reference
Designator
VS
1 uF
1200
pF
CB
Frequency (MHz)
500 to 3500
CB
68pF
LC
82nH 1008CS
LC
4
1 SBB-5089 3
RF in
CB
2
RF out
CB
Evaluation Board Layout
+
Absolute Maximum Ratings
Parameter
Absolute Limit
Max. Device Current (ID)
100 mA
Max. Device Voltage (VD)
5.5 V
Max. RF Input Power
+12 dBm
Max. Operating Dissipated
Power
0.55 W
Max. Junction Temp. (TJ)
+150°C
Operating Temp. Range (TL)
-40°C to +85°C
Max. Storage Temp.
+150°C
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating
values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH, j-l
TL=TLEAD
ESD Class 1C
Appropriate precautions in handling, packaging and testing
devices must be observed.
Mounting Instructions
1. Solder the copper pad on the backside of the device package to
the ground plane.
2. Use a large ground pad area with many plated through-holes as
shown.
3. We recommend 1 or 2 ounce copper. Measurement for this
datasheet were made on a 31 mil thick FR-4 board with 1
ounce copper on both sides.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
MSL (Moisture Sensitivity Level) Rating: Level 1
http://www.sirenza.com
EDS-103839 Rev F
SBB-5089Z 0.05-6 GHz Cascadable MMIC Amplifier
Suggested PCB Pad Layout
Dimensions in inches [millimeters]
Nominal Package Dimensions
Dimensions in inches (millimeters)
Refer to package drawing posted at www.sirenza.com for tolerances
Bottom View
Side View
Package Marking
4
3
1
1
2
BB5Z
2
3
Lead Free
Pin #
Function
1
RF IN
RF input pin. This pin requires the use of
an external DC blocking capacitor chosen
for the frequency of operation.
2, 4
GND
Connection to ground. Use via holes for
best performance to reduce lead
inductance as close to ground leads as
possible
3
RF OUT/
BIAS
Part Number Ordering Information
Part Number
Reel Size
Devices / Reel
SBB-5089Z
7"
1000
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
6
Description
RF output and bias pin. DC voltage is
present on this pin, therefore a DC blocking
capacitor is necessary for proper operation.
http://www.sirenza.com
EDS-103839 Rev F