HMC326MS8G
MICROWAVE CORPORATION
HBT DRIVER AMPLIFIER 3.0 - 4.5 GHz
FEBRUARY 2001
1
V00.1200
Features
General Description
Psat Output Power: +26 dBm
The HMC326MS8G is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC driver amplifier which operates between
3.0 and 4.5 GHz. The amplifier is packaged in a
low cost, surface mount 8 leaded package with
an exposed base for improved RF and thermal
performance. The amplifier provides 21 dB of
gain and +26 dBm of saturated power from a
+5.0V supply voltage. Power down capability is
available to preserve current consumption when
the amplifier is not in use. Internal circuit matching was optimized to provide greater than 40%
PAE. This amplifier is ideal for usage as a driver
amplifier for wireless local loop applications in
the 3.3 - 3.6 GHz frequency range.
> 40% PAE
High Gain: 21 dB
Vs: +5.0V
Ultra Small Package: MSOP8G
SMT
AMPLIFIERS
Output IP3 : +36 dBm
Guaranteed Performance,
Vs = +5V*, 50 ohm System, -40 to +85 deg C
Parameter
Min.
Frequency Range
Typ.
Max.
3.0 - 4.5
Gain @ 25 °C
18
Gain Variation over Temperature
Units
GHz
21
24
dB
0.025
0.035
dB/ °C
Input Return Loss
8
12
dB
Output Return Loss
5
7
dB
Output Power for 1dB Compression (P1dB)
21
23.5
dB m
Saturated Output Power (Psat)
23
26
dB m
Output Third Order Intercept (IP3)
32
36
dB m
5
dB
Noise Figure
Switching Speed
On/Off
10
ns
Supply Current (Icc)
Off/On
0.001 / 120
mA
Control Voltage (Vpd)
Off/On
0 / +5
Volts
Control Current (Ipd)
Off/On
0.001 / 7
mA
* See application circuit on pg. 1-167.
12 Elizabeth Drive, Chelmsford, MA 01824
1 - 162
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
HMC326MS8G
MICROWAVE CORPORATION
HBT DRIVER AMPLIFIER 3.0 - 4.5 GHz
FEBRUARY 2001
V00.1200
Broadband Gain & Return Loss
Gain vs. Temperature, Vcc= +4.5
25
24
20
1
S21
S11
S22
5
0
-5
20
18
+25C
+85C
-40C
-10
-15
AMPLIFIERS
22
10
GAIN (dB)
RESPONSE (dB)
15
16
-20
2.5
3
3.5
4
4.5
5
5.5
3
6
3.25
3.5
FREQUENCY (GHz)
3.75
4
4.25
4.5
FREQUENCY (GHz)
P1dB vs. Temperature
SMT
2
Psat vs. Temperature
30
30
28
28
24
Psat (dBm)
OUTPUT P1dB (dBm)
26
22
20
18
+25C
+85C
-40C
16
14
26
24
+25C
+85C
-40C
22
12
10
20
3
3.25
3.5
3.75
4
4.25
4.5
3
3.25
3.5
FREQUENCY (GHz)
4
4.25
4.5
Output Power vs.
Input Power@ 3.5 GHz
Output IP3 vs. Temperature
40
Pout (dBm), Gain (dB), PAE (%)
45
+25C
+85C
-40C
38
OIP3 (dBm)
3.75
FREQUENCY (GHz)
36
34
32
30
40
35
30
25
20
15
10
Output Power (dBm)
Gain (dB)
PAE (%)
5
0
3
3.25
3.5
3.75
4
4.25
4.5
FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824
-8
-6
-4
-2
0
2
4
6
8
10
12
INPUT POWER (dBm)
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
1 - 163
HMC326MS8G
MICROWAVE CORPORATION
HBT DRIVER AMPLIFIER 3.0 - 4.5 GHz
FEBRUARY 2001
V00.1200
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
-10
-15
-20
+25C
+85C
-40C
-3
-6
-9
-12
-15
3
3.25
3.5
3.75
4
4.25
3
4.5
3.25
FREQUENCY (GHz)
3.5
3.75
4
4.25
4.5
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Noise Figure vs. Temperature
0
10
9
REVERSE ISOLATION (dB)
SMT
OUTPUT RETURN LOSS (dB)
+25C
+85C
-40C
-5
-10
+25C
+85C
-40C
+25C
+85C
-40C
8
NOISE FIGURE (dB)
AMPLIFIERS
1
INPUT RETURN LOSS (dB)
0
-20
-30
-40
7
6
5
4
3
2
-50
1
-60
0
3
3.25
3.5
3.75
4
4.25
4.5
FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824
1 - 164
3
3.25
3.5
3.75
4
4.25
4.5
FREQUENCY (GHz)
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
HMC326MS8G
MICROWAVE CORPORATION
HBT DRIVER AMPLIFIER 3.0 - 4.5 GHz
FEBRUARY 2001
V00.1200
Absolute Maximum Ratings
Functional Diagram
GND
OUT
GND
Supply Voltage (Vcc)
+5.5 Vdc
Control Voltage (Vpd)
+5.5 Vdc
Input Power (RFin)(Vcc = +4.5V)
+20 dBm
Channel Temperature (Tc)
175 °C
1
Continuous Pdiss (Ta= 85 °C)
1034 mW
(derate 11.49 mW/°C above 85 °C)
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Vpd
GND
IN
SMT
See page 1 - 167 for HMC326MS8G
Application Circuit.
PIN 1
GND
Outline
1.
2.
3.
MATERIAL:
A) PACKAGE BODY - LOW STRESS INJECTION-MOLDED PLASTIC,
SILICA & SILICONE IMPREGNATED.
B) LEADFRAME MATERIAL: COPPER ALLOY
PLATING : LEAD - TIN SOLDER PLATE
DIMENSIONS ARE IN INCHES (MILLIMETERS).
12 Elizabeth Drive, Chelmsford, MA 01824
4.
5.
6.
UNLESS OTHERWISE SPECIFIED ALL TOL. ARE ±0.005 (±0.13).
CHARACTERS TO BE HELVETICA MEDIUM, APPROX .020 HIGH
WHITE INK, LOCATED APPROXIMATELY AS SHOWN.
DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15 MM PER SIDE
DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25 MM PER SIDE
Phone: 978-250-3343
Fax: 978-250-3373
AMPLIFIERS
Vcc
Web Site: www.hittite.com
1 - 165
HMC326MS8G
MICROWAVE CORPORATION
HBT DRIVER AMPLIFIER 3.0 - 4.5 GHz
FEBRUARY 2001
V00.1200
Evaluation PCB for HMC326MS8G
SMT
AMPLIFIERS
1
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have
50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the
ground plane similar to that shown above. A sufficient number of VIA holes should be used to connect the top
and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation
circuit board as shown is available from Hittite upon request.
List of Material
Item
Description
J1 , J2 , J3 , J4
PC Mount SMA RF Connector
R1
10 Ohm Resistor
R2
4.3 Ohm Resistor
R3
330 Ohm Resistor
C 1, C 2
330 pF Capacitor
C3
0.01 µF Capacitor
C4
4700 pF Capacitor
C5
0.7 pF Capacitor
C6
3.0 pF Capacitor
L1
3.3 nH Inductor
U1
HMC326MS8G Ampli fi er
PC B*
104106 Eval Board
* Circuit Board M aterial : Rogers 4350
12 Elizabeth Drive, Chelmsford, MA 01824
1 - 166
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
HMC326MS8G
MICROWAVE CORPORATION
HBT DRIVER AMPLIFIER 3.0 - 4.5 GHz
FEBRUARY 2001
V00.1200
HMC326MS8G Application Circuit
VCTL
(5V)
Vs
(5V)
AMPLIFIERS
1
R2
R3
Vpd
(PIN 1)
Vcc
(PIN 8)
R1
C1
C2
C3
C4
SMT
L1
HMC326MS8G
OUT
(PIN 6)
IN
(PIN 3)
C6
C5
GND
(PIN 2,4,5,7)
Recommended Component Values
12 Elizabeth Drive, Chelmsford, MA 01824
L1
3.3 nH
C 1, C 2
330 pF
C3
0.01 µF
C4
4700 pF
C5
0.7 pF
C6
3.0 pF
R1
10 Ohm
R2
4.3 Ohm
R3
330 Ohm
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
1 - 167
MICROWAVE CORPORATION
FEBRUARY 2001
NOTES:
SMT
AMPLIFIERS
1
12 Elizabeth Drive, Chelmsford, MA 01824
1 - 168
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com