GRF4003
Broadband LNA/Linear Driver
0.1 – 3.8 GHz
Preliminary
Package: 1.5 x 1.5 mm DFN-6
Product Description
Features
•
0.7 GHz to 3.8 GHz (Single Match)
•
NF: 0.75 dB @ 2.5 GHz
•
Gain: 13.0 dB @ 2.5 GHz
•
OIP3: +41.0 dBm @ 2.5 GHz
•
OP1dB: +25.0 dBm @ 2.5 GHz
•
Exceptional Low Voltage Linearity
•
Flexible Bias Voltage and Current
The GRF4003 is a broadband, low noise gain block designed
for small cell, wireless infrastructure and other high
performance applications. It exhibits outstanding broadband
NF, linearity and return losses over 700 to 3800 MHz with a
single match.
Configured as a first stage LNA, linear driver or cascaded gain
block, GRF4003 offers high levels of reuse both within a
design and across platforms. The device is operated from a
supply voltage of 1.8 V to 5.5 V with a selectable Iddq range
of 30 to 100 mA for optimal efficiency and linearity.
GRF4003 is internally matched to 50 Ω at the input and
output ports, needing only external DC blocks and a bias
choke on the output.
Consult with the GRF applications engineering team for
custom tuning/evaluation board data and device sparameters
• Internally Matched to 50 Ω
Functional Block Diagram
1.5 x 1.5 mm DFN-6
Applications
•
Linear Driver Amp for High PAR
waveforms such as LTE and WCDMA
•
Small Cells and Cellular Repeaters
•
First Stage LNA
•
Microwave Backhaul
• Low Voltage Radios
VEN 1
NC
Bias
NC
RFIN
NC
RFOUT/Vd
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GRF4003
Preliminary
Absolute Ratings:
Parameter
Drain Voltage
RF Input Power: (Load VSWR < 2:1; VD: 5.0 volts)
Operating Temperature (Package Heat Sink)
Maximum Channel Temperature
(MTTF > 10^6 Hours)
Maximum Dissipated Power
Electrostatic Discharge:
Charged Device Model: (TBD)
Human Body Model: (TBD)
Storage:
Storage Temperature
Moisture Sensitivity Level
Symbol
Min.
Max.
Unit
Vd
0
PIN MAX
TAMB
Tmax
-40
6.0
+20
+105
+190
V
dBm
°C
°C
600
mW
PDISS MAX
CDM
HBM
500
250
TSTG
MSL
-40
V
V
+150
2
°C
--
Caution! ESD Sensitive Device
Exceeding Absolute Maximum Rating conditions may cause permanent damage to the device.
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Preliminary
GRF4003
Pin Out (Top View)
Pin Assignments:
Pin
Name
1
VENABLE
2
3
4
5
6
NC
RF_In
RF_Out
NC
NC
GND
PKG BASE
Revision Date: 12/09/2015
Description
Note
No Connect or Ground
Venable < 0.2 volts turns the device off. Venable and series resistor M3
control the device Iddq.
No internal connection to die
LNA RF input
Internally matched 50Ω. An external DC blocking cap must be used.
LNA RF output
Internally matched 50Ω. VDD must be applied through a choke to this pin
No Connect or Ground
No internal connection to die
No Connect or Ground
No internal connection to die
Ground
Provides DC and RF ground for LNA, as well as thermal heat sink. Use
multiple ground vias beneath the package for optimal RF and thermal
performance
Enable Voltage Input
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GRF4003
Preliminary
Nominal Operating Parameters:
Parameter
Symbol
Gain Mode (Venable high)
Test Frequency
Gain
Input Return Loss
Output Return Loss
Noise Figure (De-embedded)
Output 3rd Order Intercept
Output 1dB Compression Power
Switching Rise Time
Switching Fall Time
Supply Current
Enable Current
Thermal Data
Thermal Resistance (measured via IR scan)
Channel Temperature @ +85 C Reference
(Package Heat Sink)
Revision Date: 12/09/2015
Min
.
Specification
Typ.
Max.
Unit
Condition
Vdd: 5.0 V, TA = 25°C
FTEST
S21
S11
S22
NF
OIP3
2500
13.0
-11
-16
0.75
+41.0
MHz
dB
dB
dB
dB
dBm
OP1dB
TRISE
TFALL
IDD
IENABLE
+25.0
500
500
95
2
dBm
ns
ns
mA
mA
Θjc
TCHANNEL
105
135
ᵒC/W
ᵒC
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+7.0 dBm POUT per tone at 2 MHz
Spacing (2499 and 2501 MHz)
Adjustable for optimal IP3
On standard evaluation board
Vd: 5.0 V; Iddq: 95 mA; No RF;
Pdiss: 475 mW
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GRF4003
Preliminary
GRF4003 Performance vs. Bias
Gain (dB)
GRF4003 Evaluation Board Gain vs. Frequency
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
5.0V 95mA
3.3V 55mA
1.8V 55mA
700
1960
2600
3600
Freq (MHz)
GRF4003 Noise Figure vs. Frequency: 5V/95mA
1.5
1.4
1.3
NF (dB)
1.2
1.1
1
Evaluation Board
0.9
De-embedded
0.8
0.7
0.6
0.5
700
1960
2600
3600
Freq (MHz)
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GRF4003
Preliminary
OP1dB (dBm)
GRF4003 Evaluation Board OP1dB vs. Frequency
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
5.0V 95mA
3.3V 55mA
1.8V 55mA
700
1960
2600
3600
Freq (MHz)
OIP3 (dBm)
GRF4003 Evaluation Board OIP3 vs. Frequency
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
5.0V 95mA
3.3V 55mA
1.8V 55mA
700
1960
2600
3600
Freq (MHz)
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GRF4003
Preliminary
GRF4003 Performance vs. Temperature
GRF4003 Evaluation Board NF vs. Frequency over Temperature; 5.0V/95mA
1.7
1.6
1.5
1.4
1.3
NF (dB)
1.2
105
1.1
1
85
0.9
25
0.8
-40
0.7
0.6
0.5
0.4
700
1960
2600
3600
Freq (MHz)
GRF4003 De-embedded NF vs. Frequency over Temperature
1.6
1.5
1.4
1.3
1.2
NF (dB)
1.1
105
1
0.9
85
0.8
25
0.7
-40
0.6
0.5
0.4
0.3
700
1960
2600
3600
Freq (MHz)
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GRF4003
Preliminary
Iddq (mA)
GRF4003 Iddq vs. Temperature; Vdd: 5.0 volts
105
104
103
102
101
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
105C
85C
25C
-40C
700
1960
2600
3600
Freq (MHz)
Gain (dB)
GRF4003 Evaluation Board Gain vs. Frequency over Temperature
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
105C
85C
25C
-40C
700
1960
2600
3600
Freq (MHz)
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GRF4003
Preliminary
GRF4003 Evaluation Board OP1dB vs. Frequency over Temperature
27
OP1dB (dBm)
26
25
105C
85C
24
25C
-40C
23
22
700
1960
2600
3600
Freq (MHz)
GRF4003 Evaluation Board OIP3 vs. Frequency over Temperature
44
43
42
OIP3 (dBm)
41
40
105C
39
85C
38
25C
37
-40C
36
35
34
700
1960
2600
3600
Freq (MHz)
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Preliminary
GRF4003
GRF4003 Evaluation Board S-Parameters and Stability Mu Factor (700-3800 MHz Match)
Note: Mu >= 1.0 implies unconditional stability
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Preliminary
GRF4003
GRF4003 Theory of Operation:
The GRF4003 is a single-stage, high-performance, low noise linear amplifier that is suitable for a wide range of
applications. The device is internally matched to 50 ohms and covers 100-3800 MHz with a single set of DC
blocking caps (M1) and (M7) and bias inductor (M6).
The device Iddq can be set independently from the drain voltage Vdd via the resistor M3 in series with Venable.
This allows the device Iddq to be optimized to meet a given linearity requirement with the highest possible
efficiency. For a given Venable, increasing M3 will result in lower Iddq. As shown in the data sheet plots,
GRF4003 exhibits excellent gain, NF and linearity over a wide range of Vdd values from 1.8 V up to 5.0 V. The
tables on the following page show bias resistor M3 values and resulting Iddq for a wide range of Venable and
Vdd settings. The standard evaluation board is populated with a 350 Ohm resistor at M3 for evaluation
purposes. With this resistor in place, the Venable voltage can be varied to achieve the desired Iddq to meet the
target linearity requirements. The GRF applications team sees little performance benefit from GRF4003 Iddq
values greater than 100 mA.
M_Opt is a 0.5 pF capacitor which was added to the application schematic and evaluation board to slightly
optimize the device return losses over 700 – 3800 MHz.
GRF4003 Bias Resistor vs. Iddq Table:
Device
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
Vdd
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Venable M3 (ohms) Iddq (mA)
5.0
1200
105
5.0
1500
93
5.0
2000
80
5.0
2300
73
5.0
3000
62
5.0
3500
57
5.0
4000
53
5.0
5500
43
5.0
7000
37
Device
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
Vdd
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
Venable M3 (ohms) Iddq (mA)
4.5
1000
102
4.5
1200
93
4.5
1700
76
4.5
2000
70
4.5
2500
61
4.5
3000
54
4.5
3500
49
4.5
4500
42
4.5
6500
33
Device
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
Vdd
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
Venable M3 (ohms) Iddq (mA)
4.0
1000
90
4.0
1200
80
4.0
1700
66
4.0
2000
60
4.0
2500
52
4.0
3000
46
4.0
3500
41
4.0
4500
35
4.0
6500
27
Device
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
Vdd
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
Venable M3 (ohms) Iddq (mA)
3.6
1000
78
3.6
1200
70
3.6
1700
57
3.6
2000
51
3.6
2500
44
3.6
3000
39
3.6
3500
35
3.6
4500
29
3.6
6500
22
Device
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
Vdd
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
Venable M3 (ohms) Iddq (mA)
3.3
1000
70
3.3
1200
63
3.3
1700
50
3.3
2000
45
3.3
2500
39
3.3
3000
34
3.3
3500
31
3.3
4500
26
3.3
6500
19
Device
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
Vdd
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
Venable M3 (ohms) Iddq (mA)
3.0
1000
61
3.0
1200
55
3.0
1700
44
3.0
2000
40
3.0
2500
34
3.0
3000
30
3.0
3500
27
3.0
4500
22
3.0
6500
17
Device
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
GRF4003
Vdd
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
Venable M3 (ohms) Iddq (mA)
1.8
0
100
1.8
100
79
1.8
200
66
1.8
300
57
1.8
500
45
1.8
700
38
1.8
1000
31
1.8
1200
27
1.8
1500
23
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GRF4003
Preliminary
Venable
Vdd
Standard BOM: 700-3800 MHz
M1: 30 pF (High Q)
M3: 350 Ohm (Placeholder)
M4: 0 Ohm
M5: 1.0 uF
M6: 100 nH wire wound
M7: 10 pF
M_Opt: 0.5 pF
M4
Note: Refer to data sheet for
application specific M3 values
M3
M5
GRF4003
M6
1
RFin
Extended BW BOM: 100-3800 MHz
M1: 100 pF (High Q)
M3: 350 Ohm (Placeholder)
M4: 0 Ohm
M5: 1.0 uF
M6: 220 nH wire wound
M7: 100 pF
M_Opt: 0.5 pF
Vd
M1
M7
RFout
M_Opt
GRF4003 Evaluation Board Application Schematic
M_Opt
GRF400X Evaluation Board Assembly Diagram
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Preliminary
GRF4003
GRF4003 DFN-6 Package Dimensions
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Preliminary
GRF4003
GRF4003 1.5 x 1.5 mm 6-Pin DFN PCB Layout Footprint
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Preliminary
Data Sheet Release Status:
Advance
Preliminary
Released
GRF4003
Notes
S-parameter and NF data based on EM simulations for the fully packaged device
using foundry supplied transistor s-parameters. Linearity estimates based on
device size, bias condition and experience with related devices.
All data based on evaluation board measurements in the Guerrilla RF
Applications Lab.
All data based on device qualification data. Typically, this data is nearly identical
to the data found in the preliminary version. Max and min values for key RF
parameters are included.
Information in this datasheet is specific to the Guerrilla RF, LLC (“Guerrilla RF”) product identified.
This datasheet, including the information contained in it, is provided by Guerrilla RF as a service to its customers and may be used for informational purposes only by the customer. Guerrilla RF assumes no responsibility for errors or omissions on this
datasheet or the information contained herein. Information provided is believed to be accurate and reliaible, however, no responsibility is assumed by Guerrilla RF for its use, nor for any infringement of patents, or other rights of third parties, resulting
from its use. Guerrilla RF assumes no liability for any datasheet, datasheet information, materials, products, product information, or other information provided hereunder, including the sale, distribution, reproduction or use of Guerrilla RF products,
information or materials.
No license, whether express, implied, by estoppel, by implication or otherwise is granted by this datasheet for any intellectual property of Guerrilla RF, or any third party, including without limitation, patents, patent rights, copyrights, trademarks and
trade secrets. All rights are reserved by Guerrilla RF.
All information herein, products, product information, datasheets, and datasheet information are subject to change and availability without notice. Guerrilla RF reserves the right to change component circuitry, recommended application circuitry and
specifications at any time without prior notice. Guerrilla RF may further change its datasheet, product information, documentation, products, services, specifications or product descriptions at any time, without notice. Guerrilla RF makes no commitment
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