IRLML6402PbF-1
VDS
RDS(on) max
(@VGS = -4.5V)
Qg (typical)
ID
(@TA = 25°C)
-20
V
0.065
Ω
8.0
nC
-3.7
A
HEXFET® Power MOSFET
G 1
3 D
S
2
Micro3™(SOT-23)
Features
Industry-standard pinout SOT-23 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
Standard Pack
Base Part Number
Package Type
IRLML6402TRPbF-1
Micro3™ (SOT-23)
Form
Quantity
Tape and Reel
3000
Orderable Part Number
IRLML6402TRPbF-1
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-20
-3.7
-2.2
-22
1.3
0.8
0.01
11
± 12
-55 to + 150
V
A
W
W/°C
mJ
V
°C
Thermal Resistance
Parameter
RθJA
1
Maximum Junction-to-Ambientƒ
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Typ.
Max.
Units
75
100
°C/W
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IRLML6402PbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ΔV(BR)DSS/ΔTJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
-20
–––
–––
–––
-0.40
6.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = -250μA
-0.009 ––– V/°C Reference to 25°C, I D = -1mA ‚
0.050 0.065
VGS = -4.5V, ID = -3.7A ‚
Ω
0.080 0.135
VGS = -2.5V, ID = -3.1A ‚
-0.55 -1.2
V
VDS = VGS, ID = -250μA
––– –––
S
VDS = -10V, ID = -3.7A ‚
––– -1.0
VDS = -20V, VGS = 0V
µA
––– -25
VDS = -20V, VGS = 0V, TJ = 70°C
––– -100
VGS = -12V
nA
––– 100
VGS = 12V
8.0
12
ID = -3.7A
1.2 1.8
nC
VDS = -10V
2.8 4.2
VGS = -5.0V ‚
350 –––
VDD = -10V
48 –––
ID = -3.7A
ns
588 –––
RG = 89Ω
381 –––
RD = 2.7Ω
633 –––
VGS = 0V
145 –––
pF
VDS = -10V
110 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-1.3
–––
–––
-22
–––
–––
–––
–––
29
11
-1.2
43
17
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.0A, VGS = 0V
TJ = 25°C, IF = -1.0A
di/dt = -100A/μs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width ≤ 400μs; duty cycle ≤ 2%.
ƒ Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.
„ Starting TJ = 25°C, L = 1.65mH
RG = 25Ω, IAS = -3.7A.
** For recommended footprint and soldering techniques refer to application note #AN-994.
2
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IRLML6402PbF-1
100
100
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
10
-2.25V
20μs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
10
-2.25V
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
2.0
TJ = 25 ° C
TJ = 150 ° C
V DS = -15V
20μs PULSE WIDTH
5.0
6.0
7.0
8.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
10
100
Fig 2. Typical Output Characteristics
100
4.0
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3.0
20μs PULSE WIDTH
TJ = 150 °C
1
0.1
-VDS , Drain-to-Source Voltage (V)
10
2.0
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
TOP
TOP
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ID = -3.7A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRLML6402PbF-1
1000
-VGS , Gate-to-Source Voltage (V)
800
Coss = Cds + Cgd
Ciss
600
400
Coss
200
Crss
0
10
ID = -3.7A
VDS =-10V
8
6
4
2
0
1
100
FOR TEST CIRCUIT
SEE FIGURE 13
0
3
9
12
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
-IID , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.2
0.6
0.8
1.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
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10us
10
100us
1ms
1
10ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
V GS = 0 V
0.4
-VSD ,Source-to-Drain Voltage (V)
4
6
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
-ISD , Reverse Drain Current (A)
C, Capacitance(pF)
10
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
1.2
0.1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLML6402PbF-1
25
EAS , Single Pulse Avalanche Energy (mJ)
-ID , Drain Current (A)
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
ID
-1.7A
-3.0A
BOTTOM -3.7A
TOP
20
15
10
5
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
PDM
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
1
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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150
RDS(on) , Drain-to -Source Voltage ( Ω )
0.14
0.12
0.10
0.08
Id = -3.7A
0.06
0.04
0.02
2.0
3.0
4.0
5.0
6.0
-VGS, Gate -to -Source Voltage ( V )
Fig 12. Typical On-Resistance Vs.
Gate Voltage
6
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7.0
RDS ( on ) , Drain-to-Source On Resistance ( Ω )
IRLML6402PbF-1
0.20
VGS = -2.5V
0.16
0.12
0.08
VGS = -4.5V
0.04
0.00
0
5
10
15
20
25
-I D , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
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October 28, 2014
30
IRLML6402PbF-1
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
S
Y
M
B
O
L
6
5
D
3
6
ccc
2
C B A
D
E
E1
e
5
B
e
A
A1
A2
b
c
E
E1
1
DIMENSIONS
MILLIMET ERS
MAX
MIN
0.89
1.12
0.01
0.10
0.88
1.02
0.30
0.50
0.08
0.20
3.04
2.80
2.10
2.64
1.40
1.20
0.95 BSC
1.90 BSC
0.40
0.60
0.25 BSC
0°
8°
0.10
0.20
0.15
e1
L
L1
0
aaa
e1
bbb
ccc
4
INCHES
MIN
MAX
.036
.044
.0004
.0039
.035
.040
.0119
.0196
.0032
.0078
.111
.119
.083
.103
.048
.055
.0375 BSC
.075 BSC
.0158
.0236
.0118 BSC
0°
8°
.004
.008
.006
H
A A2
L1
3X b
A1
bbb
aaa C
C A B
3 SURF
0
7
3X L
RECOMMENDED FOOT PRINT
NOT ES
1. DIMENS IONING AND T OLERANCING PER ASME Y14.5M-1994.
0.972
3X [.038]
2. DIMENS IONS ARE S HOWN IN MILLIMETERS AND INCHES .
3. CONT ROLLING DIMENS ION: MILLIMET ER.
2.742
[.1079]
4 DATUM PLANE H IS LOCATED AT T HE MOLD PART ING LINE.
5 DATUM A AND B T O B E DET ERMINED AT DAT UM PLANE H.
6 DIMENS IONS D AND E1 ARE MEAS URED AT DAT UM PLANE H.
7 DIMENS ION L IS T HE LEAD LENGTH FOR S OLDERING T O A S UBS T RATE.
8. OUT LINE CONFORMS TO JEDEC OUT LINE T O-236AB.
0.95
[.0375]
3X
0.802
[.031]
1.90
[.075]
Micro3 (SOT-23 / TO-236AB) Part Marking Information
W = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
DATE CODE
PART NUMBER
LEAD FREE
YEAR
INDUS TRIAL VERS ION
Cu WIRE
HALOGEN FREE
LOT CODE
X = PART NUMBER CODE REFERENCE:
A = IRLML2402
B = IRLML2803
C = IRLML6302
D = IRLML5103
E = IRLML6402
F = IRLML6401
G = IRLML2502
H = IRLML5203
I = IRLML0030
J = IRLML2030
K = IRLML0100
L = IRLML0060
M = IRLML0040
N = IRLML2060
P = IRLML9301
R = IRLML9303
S = IRLML6244
T = IRLML6246
U = IRLML6344
V = IRLML6346
W = IRFML8244
X = IRLML2244
Y = IRLML2246
Z = IRFML9244
Note: A line above the work week
(as s hown here) indicates Lead - Free.
2011
2012
2013
2014
2015
2016
2017
2018
2019
2020
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
Y
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
W = (27-52) IF PRECEDED BY A LETTER
YEAR
2011
2012
2013
2014
2015
2016
2017
2018
2019
2020
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
Y
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
7
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IRLML6402PbF-1
Micro3™(SOT-23/TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
4.1 ( .161 )
3.9 ( .154 )
TR
1.32 ( .051 )
1.12 ( .045 )
1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
8.3 ( .326 )
7.9 ( .312 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
†
Qualification information
Industrial
Qualification level
(per JEDE C JE S D47F
Moisture Sensitivity Level
Micro3™ (SOT-23)
RoHS compliant
††
guidelines)
MS L1
††
(per JEDE C J-S T D-020D )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Revision History
Date
10/28/2014
Comment
• Updated partmarking to reflect Industrial partmarking on page 7.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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