Agilent 1GC1-8234
0–18 GHz Packaged Active Mixer
TC230P
Data Sheet
Features
• DC-18 GHz on RF and LO
• DC-1 GHz IF
• Low Conversion Loss:
4 dB typ
• High Input P-1dB:
+9 dBm @ 10 GHz
+2 dBm @ 20 GHz
• Single-Supply Operation
VSupply = -7 V
• QFN SMT Package
Package Type:
Package Dimensions:
Package Thickness:
Pad (lead) Pitch:
Pad (lead) Width:
3 x 3 mm MLF-16/QFN-16
3 x 3 mm (118 x 118 mils)
0.90 mm (35 mils)
0.5 mm (20 mils)
0.25 mm (10 mils)
Description
The TC230P offers substantially
improved frequency range and
improved broadband performance in a Gilbert-cell mixer. It
enables low-cost topologies for
both RF and low-microwave instrumentation, which need bestavailable performance, cost,
and manufacturability.
The TC230 can be utilized as a
fundamental, 3rd, 5th, or 7th order harmonic mixer. The mixer
is fabricated using WPTC’s HBT
process, which provides excellent process uniformity, reliability, and 1/f noise performance.
The TC230P is packaged in a
3x3mm plastic molded QFN
package.
1
Absolute Maximum Ratings[1]
Symbol
Parameters/Conditions
Min.
Max.
Units
VEE
Emitter Voltage
-7.5
-6.5
Volts
Pin-RF
CW Input Power - RF port
+10
dBm
Pin-LO
CW Input Power - LO port
–55
+10
dBm
Tch
Operating Channel
150
°C
Tcase
Operating Case Temperature
–55
Tstg
Storage Temperature
–65
Tmax
Maximum Assembly Temperature
(60 seconds maximum)
Temperature [2]
°C
165
°C
300
°C
Notes:
[1]
Operatin in excess of any one of these conditions may result in permanent damage to this device.
TA = 25 °C except for Tch, Tstg, and Tmax.
[2]
Refer to DC Specifications / Physical Properties table for derating information.
DC Specifications/Physical Properties [1]
Symbol
Parameters/Conditions
VEE
Emitter Voltage
IEE
Emitter Current
[1]
Min.
Typ.
Max.
-7
-100
Units
Volts
-95
-90
mA
Measured on Wafer with Tchuck = 25°C unless otherwise noted.
[
RF Specifications[1]
Symbol
Parameters/Conditions
Min.
BW-LO
LO Bandwidth
BW-RF
Typ.
0-8
Typ.
0-18
Max.
Units
0
20
GHz
RF Bandwidth
0
20
GHz
BW-IF
IF Bandwidth
0
1
GHz
Pcomp
Power Compression at 0 dBm Input
CE
Conversion Efficency
IP-1dB
.1
.5
.9
dB
-4
-4
-8
dB
Input 1 dB Power Compression
9
2
dBm
NF
Noise Figure
24
25
dB
L-R
LO to RF Isolation
35
35
dB
R-L
RF to LO Isolation
35
dB
L-I
Lo to IF Isolation
25
dB
R-I
RF to IF Isolation
25
dB
RL RF
RF Port Return Loss
18
11
dB
RL LO
LO Port Return Loss
15
10
dB
RL IF
IF Port Return Loss
14
10
dB
-1
Notes:
1. Measured on wafer with Tchuck = 25°C with VEE = -7V and PLO=-5 dBm. Numbers giver are worst-case across the band unless otherwise
noted.
2
TC230P/rev.3.0
Applications
The TC230 is ideal for downconverting 0-20 GHz signals to
an IF of 0-1 GHz. The TC230 is
particularly well suited for applications that require load-insensitive conversion loss, good
spurious signal suppression,
reasonable dynamic range, and
low LO power over a wide bandwidth.
Biasing
The TC230 requires a single -7 V
power supply to VEE. Curent
will be approximately 95 mA.
LO power can vary between -10
and 0 dBm.
This package is compatible with
wave–solder or reflow printed
circuit board soldering processes.
Pass-through mode is available
with LObar held at a non-zero
voltage - see the Pass-Thru Mode
S-Parameter plot. For increased
gain (S21b), hold LObar positive; for decreased gain (S21a),
hold LObar negative.
Recommended pass-thru LObar
voltage is +0.5V, although voltaes between +0.4V and +1V are
acceptable. These are dissipated
through 55 ohms on-chip.
Operation
Assembly Techniques
The TC230 does not require capacitors on any ports other than
VEE. It is capable of operation
(including pass-through operation) without connecting RFbar
and LObar.
GaAs MMICs are ESD sensitive.
ESD preventive measures must
be employed in all aspects of
handling, assembly, and storage.
GND
17
GND
GND
12
1
50
50
300
300
100
300
100
50
50
300
RF
LO
2
11
LO
(N/C)
GND
RF
(N/C)
50
GND
10
3
GND
GND
60
9
60
4
GND
13
2mA
2mA
4mA
24mA
10mA
8mA
2mA
2mA
IF
14
GND
TC230
15
5
GND
3
6
GND
GND
VEE (-7V @ 95mA)
750pF
16
7
VEE
Figure 1.
TC230P Schematic
8
Pins 1, 3, 4, 5, 6, 8, 9, 10, 12,
13, 15, 16, 17 must be
GND
connected externally to RF GND
TC230P/rev.3.0
GND
5
6
7
8
GND
GND 4
1GM1
1GC1
4234
4220
YYMM
YYMM
Vee
GND 3
13
GND
LOIN 2
15 14
GND
GND 1
IFout
16
GND
GND
Top View
12 GND
11 RFIN
10 GND
9 GND
Figure 2.
TC230P Package Pin 3uts - Top View
IFout
GND
LOin
16
15
14
13
GND
1
12
2
11
3
10
4
9
GND
5
6
7
8
RFin
GND
0.1uF
Vee Capacitor
Figure 3.
TC230P Board Configuration
4
TC230P/rev.3.0
3.00
.118
Top View
1.75
.068
1GM1
1GC1
4234
4220
YYMM
YYMM
1
1.75
.068
3.00
.118
0.24
.009
Side Vew
Bottom View
16
0.50
.020
0.90
.035
Figure 4.
TC230P Package Dimensions
TC230P/rev.3.0
5
1G C1-4234 (TC230) Conversion Efficiency vs LO Pow er
0
-5
-10dBm
-9dBm
-8dBm
-7dBm
-6dBm
-5dBm
-4dBm
-3dBm
-2dBm
-1dBm
0dBm
(dB)
-10
-5dBm
R ecom m ended
LO P ower
-15
-20
-25
-30
0
2
4
6
8
10
12
14
16
18
20
22
24
26
Frequency (GHz)
Figure 5.
TC230P Conversion Gain
1G C1-4234 (T C230) Isolation
-10
-20
RF to IF
(dB)
-30
RF to LO
LO to IF
-40
IF to LO
-50
RF to IF
-60
-70
0
2
4
6
8
10
12
14
16
18
20
Frequency (G Hz)
Figure 6.
TC230P Isolation
6
TC230P/rev.3.0
Compression vs RF Frequency
Compression [dB]
0
-0.5
-1
0 dBm
-1.5
4 dBm
-2
-2.5
-3
0
2
4
6
8
10
12
14
16
18
20
RF Frequency [GHz]
Figure 7.
TC230P Compression
SSB NF vs. LO Frequency
30
29
28
NF [dB]
27
26
25
24
23
22
21
20
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
LO Freq [GHz]
Figure 8.
TC230P Noise Figure
TC230P/rev.3.0
7
1GC1-4234 (TC230) Port Match
0
-5
(dB)
-10
RF
-15
LO
IF
-20
-25
-30
-35
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Figure 9.
TC230P RF and LO Port Return
Figure 10.
TC230P Pass Through Mode
This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of circuit specifications.
In this data sheet the term typical refers to the 50th percentile performance. For additional information contact WPTC Marketing at 1-577-4482.
8
TC230P/rev.3.0
G-Cell QFN mixer inherent W-CDMA ACLR. E4438C LO.
Ph. noise -150dBc/Hz@ 5MHz. 40MHz IF, LO = -5dBm
0
-25
-20
-15
-10
-5
0
5
-10
-20
ACLR dBc
-30
-40
5MHZ
10MHz
-50
-60
-70
-80
P in dBm.
Figure 11.
TC230P Pass Through Mode
TC230P/rev.3.0
9