NS EL E463
2 Mar. 2009
®
NLR0613AXX
43Gbps TIA + Limiting Amplifier
Features
- 3dB Bandwidth: 25 GHz
Zt: Single 2k ohm
Differential Input
General Description
The NLR0613AXX is an ultra-fast InP HBT TIA + Limiting Amplifier frequency range
extending from DC to 25 GHz.
The IC is fabricated using an InP HBT process. The
NLR0613AXX is provided in a bare die.
Applications
O/E photo receiver of 43Gbps DQPSK optical communication system.
Functional Diagram
PMON
450 ohm
50 ohm
50 ohm
IT
QT
IC
QC
450 ohm
Auto Offset Cancel
3 pF
OMT
OMC
3 pF
1
®
NLR0613AXX
Connection Table
No.
NAME
FUNCTION
No.
NAME
FUNCTION
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
GND
Ground (0.0 V)
21
GND
Ground (0.0 V)
GND
Ground (0.0 V)
22
GND
Ground (0.0 V)
(2)
OMC
AOC Monitor (Complementary)
23
VEE
Power Supply (-4.5 V)
GND
Ground (0.0 V)
24
VEE
Power Supply (-4.5 V)
PMON
Power Monitor
25
GND
Ground (0.0 V)
GND
Ground (0.0 V)
26
GND
Ground (0.0 V)
GND
Ground (0.0 V)
27
GND
Ground (0.0 V)
VEE
Power Supply (-4.5 V)
28
GND
Ground (0.0 V)
VEE
Power Supply (-4.5 V)
29
OMT
AOC(2) Monitor (True)
GND
Ground (0.0 V)
30
GND
Ground (0.0 V)
GND
Ground (0.0 V)
31
GND
Ground (0.0 V)
GND
Ground (0.0 V)
32
GND
Ground (0.0 V)
GND
Ground (0.0 V)
33
GND
Ground (0.0 V)
QC(1)
Data Output (Complementary)
34
GND
Ground (0.0 V)
GND
Ground (0.0 V)
35
IC
Data Input (Complementary)
GND
Ground (0.0 V)
36
GND
Ground (0.0 V)
GND
Ground (0.0 V)
37
IT
Data Input (True)
QT(1)
Data Output (True)
38
GND
Ground (0.0 V)
GND
Ground (0.0 V)
39
GND
Ground (0.0 V)
GND
Ground (0.0 V)
40
GND
Ground (0.0 V)
Notes
(1) AC Coupling, Terminate unused output connectors to GND through 50-ohm resistors.
(2) AOC: Auto Offset Cancel.
GND 32
21 GND
22 GND
23 VEE
24 VEE
26 GND
25 GND
27 GND
28 GND
29 OMT
30 GND
31 GND
Connection Diagram (Top View)
NAME
20 GND
GND 33
19 GND
GND 34
18 QT
IC 35
17 GND
GND 36
16 GND
IT 37
15 GND
GND 38
14 QC
GND 39
13 GND
GND 40
12 GND
NAME
11 GND
10 GND
9 VEE
8 VEE
7 GND
6 GND
5 PMON
4 GND
3 OMC
2 GND
1 GND
2
®
NLR0613AXX
Absolute Maximum Ratings
SYMBOL
PARAMETER
RATING
UNIT
VEE
Power Supply Voltage (VEE)
-6.0 to +0.2
V
Iin
Applied Current at Data Input (IT, IC)
3.5
mApp
Topmcb
Operating Chip Bottom Temperature Range
-5 to 110
°C
Tstor
Storage Temperature
-40 to +125
°C
Note
(1) Short time.
Recommended Operating Conditions
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
VEE
Power Supply
-4.75
-4.50
-4.25
V
Topcb
Operating Chip Bottom Temperature
Maximum Applied Current at Data Input
(IT, IC)
Data Input Interface (IT, IC)
0
25
80
°C
2.0
mApp
Iinmax
IT, IC
(1)
DC coupling (See DC Characteristics)
-
Voutom
AOC Monitor (OMT, OMC)
Terminate with 0.1u F to GND
-
Voutpm
Peak Current Monitor (PMON)
See Sample Implementation
(See Sample PMON Characteristics)
-
QT, QC
Data Output Interface
AC coupling (See AC Characteristics),
Terminate to GND through 50 ohm
-
Note
(1) AOC: Auto Offset Cancel.
DC Characteristics
(VEE = -4.25 V to -4.75 V, GND = 0.0 V, Tcb(1) = 0 to 80 °C)
SYMBOL
PARAMETER
IEE
MIN.
TYP.
MAX.
UNIT
Power Supply Current (VEE)
88
115
mA
Inoff
Input Bias Voltage at Input Current 0mA
(IT, IC)
-1.44
-1.20
V
Pd
Power Dissipation
0.40
0.53
W
Note
(1) Tcb: Chip bottom temperature.
3
(1)
®
NLR0613AXX
AC Characteristics
(VEE = -4.25 V to -4.75 V, GND = 0.0 V, Tcb(1) = 0 to 80 °C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
f-3dB
-3dB Bandwidth
18
25
GHz
(2)
S21
Small Signal Gain@5GHz
26
32
dB
(2)
Gd
Group Delay Deviation @<21.5GHz
16
35
ps
(2)
S22
Output Return Ross @<21.5GHz
-11
-5
dB
(2)
Pmsl
Peak Current Monitor Slope (PMON)
0.24
V/mA
(3)
Vamp
Saturation Output Voltage Amplitude
0.4
Vpp
0.14
Vpmamp
PMON Voltage (V)
Note
(1) Tcb: Chip bottom temperature.
(2) Measurement conditions
2-Port Network Analyzer
IT: AC Coupling, IC: AC Coupling with external capacitor. Terminate to GND through 50 ohm.
QT: AC coupling, QC: AC Coupling with external capacitor. Terminate to GND through 50 ohm.
(3) Calculated as follows: Pmsl = Vpmamp / Iinamp.
0.15
Iinamp
Input Current Amplitude (mApp)
4
1.4
®
NLR0613AXX
Sample S-parameter Characteristics
50
0
-4.25V
-4.50V
-4.75V
-10
30
S22 (dB)
S21 (dB)
40
20
10
-20
-30
-4.25V
-4.50V
-4.75V
-40
0
-50
0
5
10
15
20
25
30
35
40
45
50
0
5
10
frequency (GHz)
15
20
25
30
35
40
45
50
frequency (GHz)
Small Signal Gain: S21
Output Return Loss S22
Measurement Conditions
Tcb=25 °C
IT: AC Coupling
IC: AC Coupling with external capacitor. Terminate to GND through 50 ohm.
QT: AC coupling
QC: AC Coupling with external capacitor. Terminate to GND through 50 ohm.
50
40
-10
30
S22 (dB)
S21 (dB)
0
0 °C
25 °C
80 °C
20
-20
-30
0 °C
25 °C
80 °C
-40
10
-50
0
0
5
10
15
20
25
30
35
40
45
0
50
5
10
15
20
25
30
35
40
45
frequency (GHz)
frequency (GHz)
Small Signal Gain: S21
Output Return Loss S22
Measurement Conditions
VEE=-4.5V
IT: AC Coupling
IC: AC Coupling with external capacitor. Terminate to GND through 50 ohm.
QT: AC coupling
QC: AC Coupling with external capacitor. Terminate to GND through 50 ohm.
5
50
®
NLR0613AXX
Sample PMON Characteristics
-1.5
PMON Voltage (V)
-1.7
-1.9
-2.1
-2.3
4.25V
4.50V
4.75V
-2.5
0.0
0.5
1.0
1.5
Input Current Amplitude (mApp)
Measurement Conditions
Tcb= 25 °C
IT, TC: 21.5Gbps, NRZ, PN=31, MR=1/2
QT: AC Coupling with external capacitor. Terminate to GND through 50 ohm.
QC: AC Coupling with external capacitor. Terminate to GND through 50 ohm.
-1.5
PMON Voltage (V)
-1.7
-1.9
-2.1
0 °C
25 °C
80 °C
-2.3
-2.5
0.0
0.5
1.0
1.5
Input Current Amplitude (mApp)
Measurement Conditions
VEE=-4.5V
IT, TC: 21.5Gbps, NRZ, PN=31, MR=1/2
QT: AC Coupling with external capacitor. Terminate to GND through 50 ohm.
QC: AC Coupling with external capacitor. Terminate to GND through 50 ohm.
6
®
NLR0613AXX
Sample Implementation
Note: Each number corresponds to a pad as shown in Connection Diagram.
1,2,4,6,7,10,11,12,13,15,16,
17, 19, 20,21,22,25,26,27,28,
30, 31, 32,33,34,36,38,39,40
Vamp = 0.4 Vpp
GND
50 ohm
Vpd1
50 ohm
QT
(1)
18
450 ohm
Z0 = 50ohm
IT
Photo
Diode
37
IC
35
450 ohm
Photo
Diode
50 ohm
QC
Z0 = 50ohm
(1)
14
Vpd2
3 pF
3 pF
Vamp = 0.4 Vpp
OMT
OMC
PMON
VEE
29
3
5
8, 9, 23, 24
0.1uF
0.1uF
100 ohm
0.1uF
V
Note
(1) AC coupling with external capacitor.
7
0.1uF
- 4.5 V
50 ohm
®
NLR0613AXX
Mounting Example
Chip capacitor
Alumina Substrate
To VEE
NAME
(1)
To PIN PD
To PIN PD
(1)
NAME
Grounded coplanar
To OMC
To VEE
Chip resistor
To PMON
Chip capacitor
Note
(1) AC coupling with external capacitor.
8
®
NLR0613AXX
Handling Instructions
Since the IC is fabricated using an InP HBT process, users are recommended to follow the
instructions below to prevent damage to the chip from electro-static discharge.
(1) Handling Precautions
1) Use a conductive working desk connected to the ground (or, a conductive table top
connected to the ground).
2) Require all handling personnel to wear a conductive bracelet or wrist-strap connected to
the ground through a 1 M-ohm resistor.
3) Ground all test equipment.
4) Ground all soldering iron tops.
5) Store IC's and other devices such as chip capacitors in their conductive carriers until
they are soldered.
6) Use power supplies that do not generate over-voltages such as spikes. Many power
supplies generate over-voltages when their outputs are turned on or turned off. To
avoid these over-voltages, connect power supplies to VEE after the power supply
outputs are turned on and set to 0 V. Disconnect power supplies from VEE after the
power supply outputs are set to 0 V but before the outputs are turned off.
9
®
NLR0613AXX
Pad Layout
(70,160)
(70,160)
(70,160)
(70,160)
(70,160)
GND
GND
(730, 1680)
(880, 1680)
(1030, 1680) GND
(1180, 1680) VEE
(1330, 1680) VEE
(1480, 1680) GND
(70,160)
GND
(580, 1680)
(70,160)
(70,160)
OMT
(430, 1680)
(70,160)
GND
Window Size
Ver., Hol.
GND (0, 1680)
(1720, 1680) GND
(1720, 1440) GND
(160, 80)
GND (0, 1290)
(1720, 1290) GND
(160, 80)
GND (0, 1140)
(1720, 1140) QT
(160, 80)
(160, 80)
(160, 80)
GND (0, 1440)
(160, 80)
(160, 80)
NAME
(160, 80)
IC
(0, 990)
(1720, 990)
GND
(160, 80)
GND
(0, 840)
(1720, 840)
GND
(160, 80)
IT
(0, 690)
(1720, 690)
GND
(160, 80)
(160, 80)
GND
(0, 540)
(1720, 540)
QC
(160, 80)
(160, 80)
GND
(0, 390)
(1720, 390)
GND
(160, 80)
(160, 80)
GND
(0, 240)
(1720, 240)
GND
(160, 80)
GND
NAME
x
(0, 0)
(1330, 0) VEE
(1480, 0) GND
(70,160)
(70,160)
(70,160)
(70,160)
10
Window Size
Ver., Hol.
(1180, 0) VEE
Die thickness: 0.15 mm
(1720, 0) GND
(1030, 0) GND
(70,160)
(70,160)
(70,160)
(70,160)
GND
(70,160)
GND
OMC
PMON
(580, 0)
GND
(880, 0)
(430, 0)
(730, 0)
(280, 0)
1920 ± 50
(160, 80)
1920 ± 50
y
Window Size
Ver., Hol.
(280, 1680)
Window Size
Ver., Hol.
Unit: µm
®
NLR0613AXX
Caution
1. In order to improve products and technology, specifications are subject to change without notice.
2. When using the products, be sure the latest information and specifications are used.
3. Circuit drawings etc. shall be provided for the purpose of information only on application examples
not for actual installation of equipment. NTT Electronics Corp. shall not assume any liability for
damage that may result from the use of these circuit drawings etc. NTT Electronics Corp. shall not
assent to or guarantee any rights of execution for patent rights of the third parties and other rights
that may be raised for use of these circuit drawings.
4. To make a design, the products shall be used within the assured ranges with respect to maximum
ratings, voltage, and radiation. NTT Electronics Corp. shall not take any responsibility for damage
caused by neglecting the assured values or improper usage.
5. Though NTT Electronics Corp. makes every effort to improve quality and reliability, there is a risk
that failure or malfunction may occur in semiconductors. It is therefore necessary that the
purchasers should take responsibility for making a design that allows the products to operate safely
on equipment and systems without any direct threat to the human body and/or property, should such
failures or malfunction occur.
6. NTT Electronics Corp.'s semiconductor device products are designed to be used with multimedia
networks communication equipment and related measuring equipment. They have not been
developed for such equipment that may affect people's lives. Those who intend to use the products
for special purposes that may affect human life as a result of failure or malfunction in the equipment
using the products or that require extremely high reliability (e.g. life support, aircraft and space
rockets, control in nuclear power facilities, submarine relays, control of operations, etc.) shall
contact NTT Electronics Corp. before using the products. NTT Electronics Corp. shall not assume
any liability for damage that may occur during operation of the products without prior consultation.
7. The product is controlled under the 'Foreign Exchange and Foreign Trade Law'. In the case of
exporting this product, it is requested that you take necessary procedures to obtain prior approval
from the Minister of Economy, Trade and Industry.
8. The product uses arsenic compound. Arsenic compound powder and vapor are dangerous for
humans. Do not break, cut, crush or chemically destroy the products. To dispose of the products,
follow the relevant regulations and laws; do not mix with general industrial waste and domestic
garbage.
9. Any questions should be directed to the Sales Department of NTT Electronics Corp.
Copyright 2009
NTT Electronics Corp.
11