PD - 97427A
IRFH7911PbF
HEXFET® Power MOSFET
VDS
Q1
30
Q2
30
V
RDS(on) max
8.6
3.0
m:
8.3
34
nC
13
28
A
(@VGS = 10V)
Qg (typical)
ID
(@TA = 25°C)
Dual PQFN 5X6 mm
Applications
•
Control and synchronous MOSFET for buck converters
Features and Benefits
Benefits
Features
Increased power density
Control and synchronous FET in one package
(50% vs two PQFN 5x6)
Low charge control MOSFET (8.3 nC typical)
Low RDSon synchronous MOSFET (< 3.0 mΩ)
Lower switching losses
results in Lower conduction losses
⇒
100% Rg tested
Low Profile (≤ 0.9 mm)
Increased power density
Easier manufacturing
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
Increased reliability
MSL2, Industrial Qualification
Orderable part num ber
IRFH7911TRPBF
IRFH7911TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Increased reliability
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
Parameter
Q1 Max.
Q2 Max.
VDS
Drain-to-Source Voltage
30
VGS
Gate-to-Source Voltage
± 20
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
13
ID @ TA = 70°C
10
23
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
100
230
Units
V
28
PD @TA = 25°C
Power Dissipation
2.4
3.4
PD @TA = 70°C
Power Dissipation
1.5
2.2
TJ
Linear Derating Factor g
Operating Junction and
TSTG
Storage Temperature Range
0.019
A
W
0.027
W/°C
°C
Q1 Max.
Q2 Max.
Units
7.7
2.5
°C/W
53
37
-55 to + 150
Thermal Resistance
RθJC
Parameter
Junction-to-Case f
RθJA
Junction-to-Ambient g
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1
1/12/10
IRFH7911PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
ΔΒVDSS/ΔTJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
Q1&Q2
Q1
Q2
Q1
Q2
VGS(th)
ΔVGS(th)/ΔTJ
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
IDSS
Drain-to-Source Leakage Current
IGSS
gfs
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Qg
Total Gate Charge
Qgs1
Pre-Vth Gate-to-Source Charge
Qgs2
Post-Vth Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw
Switch Charge (Qgs2 + Qgd)
Qoss
Output Charge
RG
Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Q1&Q2
Q1
Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min.
30
–––
–––
–––
–––
–––
–––
1.35
–––
–––
–––
–––
–––
–––
17
106
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.021
0.022
7.2
11.1
2.4
3.4
–––
-6.8
-6.4
–––
–––
–––
–––
–––
–––
8.3
34
2.0
7.9
1.0
3.6
3.2
11
2.1
12
4.2
15
5.0
19
1.8
0.7
12
22
15
35
12
28
5.9
14
1060
4450
230
850
110
440
Max.
–––
–––
–––
8.6
14.5
3.0
4.0
2.35
–––
–––
1.0
150
100
-100
–––
–––
12
51
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
Units
VGS = 0V, ID = 250μA
V
V/°C Reference to 25°C, ID = 1mA
e
e
e
e
VGS = 10V, ID = 12A
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 26A
VGS = 4.5V, ID = 21A
Q1: VDS = VGS, ID = 25μA
V
mV/°C Q2: VDS = VGS, ID = 100μA
mΩ
μA
nA
S
nC
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VDS = 15V, ID = 10A
VDS = 15V, ID = 21A
Q1
VDS = 15V
VGS = 4.5V, ID = 10A
Q2
VDS = 15V
VGS = 4.5V, ID = 21A
nC
VDS = 16V, VGS = 0V
Ω
ns
pF
Q1
VDD = 15V, VGS = 4.5V
ID = 10A
RG=1.8Ω
Q2
VDD = 15V, VGS = 4.5V
ID = 21A
RG=1.8Ω
VGS = 0V
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
c
Typ.
–––
–––
d
Q1 Max.
12
10
Q2 Max.
32
21
Units
mJ
A
Diode Characteristics
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS
ISM
2
c
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
–––
–––
13
20
13
24
Max.
3.0
3.0
100
230
1.0
1.0
20
29
20
36
Units
Conditions
A
MOSFET symbol
showing the
integral reverse
A
p-n junction diode.
TJ = 25°C, IS = 10A, VGS = 0V
V
TJ = 25°C, IS = 21A, VGS = 0V
ns Q1 TJ = 25°C, IF = 10A,
VDD = 15V, di/dt = 300A/μs
nC Q2 TJ = 25°C, IF = 21A,
VDD = 15V, di/dt = 280A/μs
e
e
e
e
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IRFH7911PbF
Typical Characteristics
Q1 - Control FET
ID, Drain-to-Source Current (A)
TOP
100
BOTTOM
10
Q2 - Synchronous FET
1000
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
TOP
ID, Drain-to-Source Current (A)
1000
1
2.3V
0.1
100
BOTTOM
10
1
2.3V
0.1
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
Tj = 25°C
Tj = 25°C
0.01
0.01
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
≤60μs PULSE WIDTH
ID, Drain-to-Source Current (A)
Tj = 150°C
10
100
Fig 2. Typical Output Characteristics
1000
TOP
100
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
TOP
ID, Drain-to-Source Current (A)
1000
1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
1
100
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
10
2.3V
≤60μs PULSE WIDTH
2.3V
Tj = 150°C
0.1
1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
1000
ID, Drain-to-Source Current (A)
1000
ID, Drain-to-Source Current (A)
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
100
TJ = 150°C
10
1
TJ = 25°C
100
TJ = 150°C
10
TJ = 25°C
1
VDS = 15V
VDS = 15V
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
0.1
0.1
2
3
4
5
VGS, Gate-to-Source Voltage (V)
6
Fig 5. Typical Transfer Characteristics
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1
2
3
4
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
3
IRFH7911PbF
Typical Characteristics
Q1 - Control FET
10000
Q2 - Synchronous FET
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
C, Capacitance (pF)
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
10000
Ciss
Coss
1000
Crss
100
10
1
10
1
100
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
14
ID= 10A
12
VDS = 24V
VGS, Gate-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
14
VDS= 15V
10
8
6
4
2
0
ID= 21A
12
VDS= 15V
10
8
6
4
2
0
0
5
10
15
20
25
0
20
Qg, Total Gate Charge (nC)
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
100μsec
10
1msec
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.01
80
100
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
100μsec
1msec
10
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
4
60
Fig 10. Typical Gate Charge vs. Gate-to-Source
Voltage
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
1000
40
Qg, Total Gate Charge (nC)
Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage
0.1
VDS = 24V
0.01
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 12. Maximum Safe Operating Area
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IRFH7911PbF
Typical Characteristics
Q1 - Control FET
Q2 - Synchronous FET
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 12A
VGS = 10V
1.5
(Normalized)
RDS(on) , Drain-to-Source On Resistance
2.0
1.0
1.5
1.0
0.5
0.5
-60 -40 -20
0
20
40
60
-60 -40 -20
80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 13. Normalized On-Resistance vs. Temperature
0
20
40
60
TJ , Junction Temperature (°C)
ISD , Reverse Drain Current (A)
1000
100
TJ = 150°C
10
TJ = 25°C
1.00
100
TJ = 150°C
10
TJ = 25°C
1.00
VGS = 0V
VGS = 0V
0.10
0.4
0.6
0.8
1.0
1.2
1.4
0.10
1.6
0.2
VSD , Source-to-Drain Voltage (V)
ID = 13A
20
15
TJ = 125°C
10
TJ = 25°C
5
4
6
8
10
12
14
16
VGS, Gate-to-Source Voltage (V)
Fig 17. Typical On-Resistance vs.Gate Voltage
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0.6
0.8
1.0
1.2
1.4
1.6
Fig 16. Typical Source-Drain Diode Forward Voltage
RDS (on), Drain-to -Source On Resistance (mΩ)
25
2
0.4
VSD , Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain Diode Forward Voltage
RDS (on), Drain-to -Source On Resistance (mΩ)
80 100 120 140 160
Fig 14. Normalized On-Resistance vs. Temperature
1000
ISD , Reverse Drain Current (A)
ID = 26A
VGS = 10V
12
ID = 26A
10
8
6
TJ = 125°C
4
TJ = 25°C
2
2
4
6
8
10
12
14
16
VGS, Gate-to-Source Voltage (V)
Fig 18. Typical On-Resistance vs.Gate Voltage
5
IRFH7911PbF
Typical Characteristics
Q1 - Control FET
Q2 - Synchronous FET
14
30
25
10
ID , Drain Current (A)
ID , Drain Current (A)
12
8
6
4
20
15
10
5
2
0
0
25
50
75
100
125
150
25
50
TA , Ambient Temperature (°C)
150
2.5
VGS(th) Gate threshold Voltage (V)
VGS(th) Gate threshold Voltage (V)
125
Fig 20. Maximum Drain Current vs. Ambient Temp.
2.5
ID = 25μA
2.0
1.5
1.0
0.5
2.0
ID = 250μA
1.5
1.0
0.5
-75
-50
-25
0
25
50
75
100
125
150
-75
-50
-25
TJ , Temperature ( °C )
0
25
50
75
100
125
150
TJ , Temperature ( °C )
Fig 21. Threshold Voltage vs. Temperature
Fig 22. Threshold Voltage vs. Temperature
150
EAS, Single Pulse Avalanche Energy (mJ)
50
EAS, Single Pulse Avalanche Energy (mJ)
100
TA , Ambient Temperature (°C)
Fig 19. Maximum Drain Current vs. Ambient Temp.
ID
2.3A
3.1A
BOTTOM 10A
TOP
40
30
20
10
ID
5.4A
6.6A
BOTTOM 21A
TOP
100
50
0
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 23. Maximum Avalanche Energy vs. Drain Current
6
75
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 24. Maximum Avalanche Energy vs. Drain Current
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IRFH7911PbF
100
Thermal Response ( Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q1)
Thermal Response ( Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 26. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q2)
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7
IRFH7911PbF
Driver Gate Drive
D.U.T
ƒ
-
‚
-
-
„
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 28. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
+
V
- DD
IAS
VGS
20V
A
0.01Ω
tp
I AS
Fig 29a. Unclamped Inductive Test Circuit
RD
VDS
Fig 29b. Unclamped Inductive Waveforms
VDS
90%
VGS
D.U.T.
RG
+
- VDD
V10V
GS
10%
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on)
Fig 30a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
tr
t d(off)
Fig 30b. Switching Time Waveforms
Id
Vds
50KΩ
12V
tf
Vgs
.2μF
.3μF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 31a. Gate Charge Test Circuit
8
Qgs1 Qgs2
Qgd
Qgodr
Fig 31b. Gate Charge Waveform
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IRFH7911PbF
PQFN 5x6 Outline "C" Package Details
For footprint and stencil design recommendations, please refer to application note AN-1152 at
http://www.irf.com/technical-info/appnotes/an-1152.pdf
PQFN 5x6 Outline "C" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
PIN 1
IDENTIFIER
XXXX
XYWWX
XXXXX
PART NUMBER
(“4 or 5 digits”)
MARKING CODE
(Per Marking Spec)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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9
IRFH7911PbF
PQFN 5x6 Outline "C" Tape and Reel
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Qualification information†
Qualification level
Moisture Sensitivity Level
RoHS compliant
††
Cons umer
†††
(per JEDE C JE S D47F
guidelines )
MS L2 ††††
PQFN 5mm x 6mm
(per JE DE C J-S T D-020D††† )
Yes
† Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
†† Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
†††† Higher MSL ratings may be available for the specific package types listed here. Please contact your
International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Revision History
Date
1/8/2010
Comment
Pin number on front page drawing has been corrected
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C,
Q1: L = 0.23mH, RG = 25Ω, IAS = 10A;
Q2: L = 0.15mH, RG = 25Ω, IAS = 21A.
ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
Rθ is measured at TJ approximately 90°C.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
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