5410 series
VCXO Module ICs with Built-in Varicap
OVERVIEW
The 5410 series are VCXO module ICs supported 20MHz to 62MHz fundamental oscillation. They employ a recently developed varicap
diode fabrication process at fixation communication usage that provides a low phase noise characteristic and a wide frequency pulling
range without any external components. The 5410 series are ideal for wide pulling range, low phase noise, VCXO modules.
FEATURES
▪ VCXO with recently developed varicap diode built-in
▪ Wide frequency pulling range
±150ppm@A1 version, VC=1.65±1.65V, f=40MHz
(Crystal unit: γ= 330, C0 = 1.3pF)
±140ppm@B1 version, VC=1.65±1.65V, f=61.44MHz
(Crystal unit: γ= 350, C0 = 3.2pF)
▪ Oscillation frequency range (for fundamental oscillation):
20 to 40MHz (A1～A5 version)
40 to 62MHz (B1～B3 version)
▪ Low phase noise: -135dBc/Hz@A1 version, 1kHz Offset, f=40MHz
-160dBc/Hz@A1 version, 10MHz Offset, f=40MHz
(Crystal unit: γ= 330, C0 = 1.3pF)
-126dBc/Hz@B1 version, 1kHz Offset, f=61.44MHz
-160dBc/Hz@B1 version, 10MHz Offset, f=61.44MHz
(Crystal unit: γ= 350, C0 = 3.2pF)
▪ Operating supply voltage range: 2.97 to 3.63V
▪ Operating current consumption
1.6mA@A1 version, f=40MHz, Q pin no load
2.7mA@B1 version, f=61.44MHz, Q pin no load
▪ Frequency divider built-in
Selectable by version: fOSC,fOSC/2,fOSC/4,fOSC/8,fOSC/16
▪ CMOS output
▪ Output drive capability: 2.8mA
▪ -40 to 105°C operating temperature range
▪ Standby function
High impedance in standby mode, oscillator stops
▪ CMOS output duty level (1/2VDD)
▪ 50±5% output duty
▪ Wafer form (WF5410xx)
▪ Chip form (CF5410xx)
APPLICATIONS
Miniature VCXO modules for fixation communication
SERIES CONFIGURATION
Output frequency and version name
Operating supply voltage
Recommended operating
range [V]
frequency range*1 [MHz]
fOSC
fOSC/2
fOSC/4
fOSC/8
fOSC/16
20 to 40
5410A1
5410A2
5410A3
5410A4
5410A5
40 to 62
5410B1
5410B2
5410B3
-
-
2.97 to 3.63
*1. The recommended oscillation frequency is a yardstick value derived from the resonator used for NPC characteristics authentication. However, the
oscillation frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to resonator characteristics and mounting conditions, so
the oscillation characteristics of components must be carefully evaluated.
ORDERING INFORMATION
Device
Package
WF5410xx-4
Wafer form
Version name
WF5410□□-4
Form WF:Wafer form
CF: Chip (Die) form
CF5410xx-4
Chip form
Frequency divider function
Oscillation frequency range A: 20 to 40MHz
B: 40 to 62MHz
SEIKO NPC CORPORATION - 1
5410 series
PAD LAYOUT
(Unit: μm)
(420,400)
Q
6
Y VDD
7
(0,0)
1
2
(-420,-400) XTN
5
VSS
4
INHN
3
VC
XT
X
Chip size: 0.84mm × 0.80mm
Chip thickness: 130μm
PAD size: 90μm
Chip base: VSS level
PIN DESCRIPTION and PAD COORDINATE
No.
1
2
Pin
XTN
XT
I/O
PAD coordinate [μm]
Description
O
Crystal connection pins.
I
Crystal is connected between XT and XTN.
Oscillation frequency control voltage input pin (positive polarity)
X
Y
-189.0
-295.0
59.4
-295.0
315.0
-244.6
315.0
34.2
3
VC
I
4
INHN
I
5
VSS
-
(-) ground
315.0
280.2
6
Q
O
Output one of fOSC, fOSC/2, fOSC/4, fOSC/8, fOSC/16
-315.0
280.2
7
VDD
-
(+) supply voltage
-315.0
34.2
(frequency increase with increasing voltage)
Input pin controlled output state (oscillator stops when LOW),
power-saving pull-up resistor built-in
BLOCK DIAGRAM
RPU1,RPU2
INHN
VDD
Voltage
Regulator
XT
RVC1
CVC1
OSC
Level
Shifter
1/N
Divider
Buffer
(CMOS)
Q
N=1,2,4,8,16
XTN
RVC2
CVC2
VC
VSS
SEIKO NPC CORPORATION - 2
5410 series
SPECIFICATIONS
Absolute Maximum Ratings
VSS=0V
Parameter
Symbol
Condition
Rating
Unit
-0.3 to +5.0
V
Input pins
-0.3 to VDD+0.3
V
Output pins
-0.3 to VDD+0.3
V
+125
°C
-65 to +125
°C
*1
VDD
Between VDD and VSS
*1*2
VIN
Supply voltage range
Input voltage range
*1*2
Output voltage range
VOUT
Junction temperature*3
Tj
Storage temperature range*4
TSTG
Wafer form, Chip form
Output current*3
IOUT
Q pin
Ta = -40～+85°C
±20
Ta = -40～+105°C
±10
mA
*1. This parameter rating is the values that must never exceed even for a moment. This product may suffer breakdown if this parameter rating is exceeded.
Operation and characteristics are guaranteed only when the product is operated at recommended operating conditions.
*2. VDD is a VDD value of recommended operating conditions.
*3. Do not exceed the absolute maximum ratings. If they are exceeded, a characteristic and reliability will be degraded.
*4. When stored in nitrogen or vacuum atmosphere applied to IC itself only (excluding packaging materials).
Recommended Operating Conditions
VSS=0V
Parameter
Symbol
Condition
Rating
MIN
TYP
MAX
Unit
5410A1～5410A5 version
20
40
5410B1～5410B3 version
40
62
5410A1～5410A5 version
1.25
40
5410B1～5410B3 version
10
62
VDD
Between VDD and VSS*2
2.97
3.63
Input voltage
VIN
VC pin , INHN pin
VSS
VDD
V
Operating temperature
Ta
-40
+105
°C
Output load
CL
15
pF
Oscillation frequency range*1
fOSC
Output frequency range
fOUT
Operating supply voltage
Q pin
MHz
MHz
V
*1. The oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency
range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation
characteristics of components must be carefully evaluated.
*2. Mount a ceramic chip capacitor that is larger than 0.01μF proximal to IC (within approximately 3mm) between VDD and VSS in order to obtain stable
operation of 5410 series. In addition, the wiring pattern between IC and capacitor should be as wide as possible.
Note. Since it may influence the reliability if it is used out of range of recommended operating conditions, this product should be used within this range.
SEIKO NPC CORPORATION - 3
5410 series
Electrical Characteristics
5410A1～5410A5 version
VDD=2.97 to 3.63V, VC=0.5VDD, VSS=0V, Ta= -40 to +105°C unless otherwise noted.
Parameter
Symbol
Rating
Condition
MIN
5410A1(fOSC), measurement 1, no load, INHN=”OPEN”,
VDD=3.3V, fOSC=40MHz, fOUT=40MHz
5410A2(fOSC/2), measurement 1, no load, INHN=”OPEN”,
VDD=3.3V, fOSC=40MHz, fOUT=20MHz
Current consumption
IDD
5410A3(fOSC/4), measurement 1, no load, INHN=”OPEN”,
VDD=3.3V, fOSC=40MHz, fOUT=10MHz
5410A4(fOSC/8), measurement 1, no load, INHN=”OPEN”,
VDD=3.3V, fOSC=40MHz, fOUT= 5MHz
5410A5(fOSC/16), measurement 1, no load, INHN=”OPEN”,
VDD=3.3V, fOSC=40MHz, fOUT=2.5MHz
VOH
measurement 2，Q pin, IOH=-2.8mA
LOW-level output voltage
VOL
measurement 2，Q pin, IOL=2.8mA
HIGH-level input voltage
VIH
measurement 3, INHN pin
LOW-level input voltage
VIL
measurement 3, INHN pin
Output leakage current
IZ
measurement 4, Q pin, Ta=25°C , INHN=“Low”
mA
1.1
1.6
mA
1.0
1.5
mA
0.9
1.4
mA
μA
V
0.4
V
V
0.7VDD
-1
0.3VDD
V
1
μA
measurement 5, INHN pin, VINHN=0V
1
3.5
9
MΩ
RPU2
measurement 5, INHN pin, VINHN=0.7VDD
23
47
71
kΩ
RVC1
measurement 6, between XT and VC
210
420
630
397
793
1190
RVC2
measurement 6, between XTN and VC
116
233
350
VC=0.3V
5.1
5.6
6.2
VC=1.65V
2.5
3.1
3.6
VC=3.0V
1.2
1.5
1.8
VC=0.3V
7.6
8.4
9.3
VC=1.65V
3.8
4.7
5.4
VC=3.0V
1.7
2.3
2.8
A1 version
A2, A3, A4, A5 version
Design value (a monitor pattern on a wafer is tested),
Excluding parasitic capacitance.
capacitance
CVC2
frequency
1.8
VDD-0.4
Oscillator block built-in
Maximum modulation
1.2
RPU1
CVC1
Input leakage resistance
mA
100
HIGH-level output voltage
resistance
3.0
Ta = -40～+105°C
measurement 1, INHN=“Low”
Oscillator block built-in
1.6
10
ISTB
Pull-up resistance
MAX
Ta = -40～+85°C
Standby current
Unit
TYP
RVIN
Design value (a monitor pattern on a wafer is tested),
Excluding parasitic capacitance.
measurement 7, VC pin, Ta=25°C
kΩ
pF
pF
MΩ
10
measurement 10, -3dB frequency, Ta=25°C
FM
VDD=3.3V, VC=1.65V±1.65V
15
25
kHz
crystal=40MHz (R1=42Ω, C0=1.3pF)
SEIKO NPC CORPORATION - 4
5410 series
5410B1～5410B3 version
VDD=2.97 to 3.63V, VC=0.5VDD, VSS=0V, Ta= -40 to +105°C unless otherwise noted.
Parameter
Symbol
Rating
Condition
MIN
5410B1(fOSC), measurement 1, no load, INHN=”OPEN”,
VDD=3.3V, fOSC=61.44MHz, fOUT=61.44MHz
Current consumption
IDD
5410B2(fOSC/2), measurement 1, no load, INHN=”OPEN”,
VDD=3.3V, fOSC=61.44MHz, fOUT=30.72MHz
5410B3(fOSC/4), measurement 1, no load, INHN=”OPEN”,
VDD=3.3V, fOSC=61.44MHz, fOUT=15.36MHz
VOH
measurement 2，Q pin, IOH=-2.8mA
LOW-level output voltage
VOL
measurement 2，Q pin, IOL=2.8mA
HIGH-level input voltage
VIH
measurement 3, INHN pin
LOW-level input voltage
VIL
measurement 3, INHN pin
Output leakage current
IZ
measurement 4, Q pin, Ta=25°C , INHN=“Low”
mA
1.6
2.6
mA
μA
V
0.4
V
V
0.7VDD
-1
0.3VDD
V
1
μA
measurement 5, INHN pin, VINHN=0V
1
3.5
9
MΩ
RPU2
measurement 5, INHN pin, VINHN=0.7VDD
23
47
71
kΩ
RVC1
measurement 6, between XT and VC
B1 version
210
420
630
B2, B3 version
303
606
909
RVC2
measurement 6, between XTN and VC
116
233
350
VC=0.3V
5.1
5.6
6.2
VC=1.65V
2.5
3.1
3.6
VC=3.0V
1.2
1.5
1.8
VC=0.3V
5.1
5.6
6.2
VC=1.65V
2.5
3.1
3.6
VC=3.0V
1.2
1.5
1.8
Design value (a monitor pattern on a wafer is tested),
Excluding parasitic capacitance.
capacitance
CVC2
frequency
3.2
VDD-0.4
Oscillator block built-in
Maximum modulation
2.0
RPU1
CVC1
Input leakage resistance
mA
100
HIGH-level output voltage
resistance
5.0
Ta = -40～+105°C
measurement 1, INHN=“Low”
Oscillator block built-in
2.7
10
ISTB
Pull-up resistance
MAX
Ta = -40～+85°C
Standby current
Unit
TYP
RVIN
Design value (a monitor pattern on a wafer is tested),
Excluding parasitic capacitance.
measurement 7, VC pin, Ta=25°C
kΩ
pF
pF
MΩ
10
measurement 10, -3dB frequency, Ta=25°C
FM
VDD=3.3V, VC=1.65V±1.65V
15
25
kHz
crystal=61.44MHz (R1=20Ω, C0=3.2pF)
SEIKO NPC CORPORATION - 5
5410 series
Switching Characteristics
5410A1～5410A5 version
VDD = 2.97 to 3.63V, VC=0.5VDD, VSS= 0V, Ta = -40 to +105°C unless otherwise noted
Parameter
Symbol
Condition
AC HIGH-level output voltage
VTOP
measurement 8, CL=15pF
AC LOW-level output voltage
VBASE
measurement 8, CL=15pF
Q pin
Output rise time
tr
Q pin
Output fall time
tf
Q pin
Output duty cycle
DUTY
Q pin
Output enable time
tOE
Q pin
Output disable delay time
tOD
measurement 8,
CL=15pF
0.1VDD→0.9VDD
measurement 8,
CL=15pF
0.9VDD→0.1VDD
Rating
MIN
TYP
0.9VDD
2.8
Ta = -40～+105°C
6.0
6.5
Ta = -40～+85°C
3.0
Ta = -40～+105°C
6.0
6.5
45
Unit
V
0.1VDD
Ta = -40～+85°C
measurement 8, VDD=3.3V
CL=15pF, Ta=25°C,
MAX
50
V
ns
ns
55
%
measurement 9, Ta=25°C, CL=15pF
2
ms
measurement 9, Ta=25°C, CL=15pF
200
ns
Note. The ratings are measured by using the NPC standard crystal and jig. They may vary due to crystal characteristics, so they must be carefully evaluated.
5410B1～5410B3 version
VDD = 2.97 to 3.63V, VC=0.5VDD, VSS= 0V, Ta = -40 to +105°C unless otherwise noted
Parameter
Symbol
Condition
AC HIGH-level output voltage
VTOP
measurement 8, CL=15pF
AC LOW-level output voltage
VBASE
measurement 8, CL=15pF
Q pin
Output rise time
tr
Q pin
Output fall time
tf
Q pin
Output duty cycle
DUTY
Q pin
Output enable time
tOE
Q pin
Output disable delay time
tOD
measurement 8,
CL=15pF
0.1VDD→0.9VDD
measurement 8,
CL=15pF
0.9VDD→0.1VDD
Rating
MIN
TYP
0.9VDD
2.2
Ta = -40～+105°C
5.0
5.5
Ta = -40～+85°C
2.4
Ta = -40～+105°C
5.0
5.5
45
Unit
V
0.1VDD
Ta = -40～+85°C
measurement 8, VDD=3.3V
CL=15pF, Ta=25°C,
MAX
50
V
ns
ns
55
%
measurement 9, Ta=25°C, CL=15pF
2
ms
measurement 9, Ta=25°C, CL=15pF
200
ns
Note. The ratings are measured by using the NPC standard crystal and jig. They may vary due to crystal characteristics, so they must be carefully evaluated.
SEIKO NPC CORPORATION - 6
5410 series
Switching Time Measurement Waveform
VDD
0.9V DD
VTOP
0.9VDD
Q
0.1VDD
0.1VDD
VBASE
VSS
Tw
T
tr
DUTY measurement
voltage 0.5VDD
DUTY = Tw/T×100 (%)
tf
Figure 1. Output switching waveform
VDD
INHN
VIH
VIL
VSS
tOD
0.1V
tOE
VTOP
0.5VDD
Q
VBASE
0.1V
fout
Hi-Z
Low
fout
When INHN goes HIGH to LOW, the Q output becomes high impedance.
When INHN goes LOW to HIGH, the Q output goes LOW once and then becomes normal output operation after having detected oscillation signals.
Figure 2. Switching waveform controlled output state
SEIKO NPC CORPORATION - 7
5410 series
FUNCTIONAL DESCRIPTION
INHN Function
Q output is stopped and becomes high impedance.
Power Saving Pull-up Resistor
The INHN pin pull-up resistance changes its value to RPU1 or RPU2 in response to the input level (HIGH or LOW).
When INHN is tied to LOW level, the pull-up resistance becomes large (RPU1), thus reducing the current consumed by the resistance.
When INHN is left open circuit or tied to HIGH level, the pull-up resistance becomes small (RPU2), thus internal circuit of INHN becomes
HIGH level.
Consequently, the IC is less susceptible to the effects of noise, helping to avoid problems such as the output stopping suddenly.
Boot function
It becomes easy to start oscillation by making XT pin potential to VDD level when oscillation starts up. A current flows into VC pin when
the voltage below a VDD level is being applied to VC pin. A boot function is canceled after an oscillation start.
Oscillation Start-up Detector Function
The 5410 series have an oscillation detection circuit. The oscillation detection circuit disables the output until crystal oscillation becomes
stable when oscillation circuit starts up. This function avoids the abnormal oscillation in the initial power up and in a reactivation by INHN.
SEIKO NPC CORPORATION - 8
5410 series
MEASUREMENT CIRCUITS
MEASUREMENT CIRCUIT 1
Measurement Parameter: IDD, ISTB
A
Crystal
IDD,ISTB
0.01μF
VDD
XT
XTN
Q
VC
INHN VSS
Parameter
SW1
IDD
OFF
ISTB
ON
SW1
MEASUREMENT CIRCUIT 2
Measurement Parameter: VOH, VOL
XT input signal : 1.5VP-P sine wave
0.01μF
VDD
XT
Signal
0.001μF
50Ω
XTN
Q
50Ω
VC
V
INHN VSS
Q
ΔV
VOH
VS
VS adjusted so that ΔV=50×IOH
0.1μF
VS
VOH
VOL
Q
ΔV
VS
VOL
VS adjusted so that ΔV=50×IOL
SEIKO NPC CORPORATION - 9
5410 series
MEASUREMENT CIRCUIT 3
Measurement Parameter: VIH, VIL
Crystal
0.01μF
VDD
XT
XTN
Q
CL=15pF
(Including probe capacitance)
VC
INHN VSS
VIH
VIL
V
VIH: VSS→VDD , voltage that changes enable output state
VIL: VDD→VSS , voltage that changes disable output state
MEASUREMENT CIRCUIT 4
Measurement Parameter: IZ
0.01μF
VDD
XT
Q
XTN
A
IZ
VC
INHN VSS
MEASUREMENT CIRCUIT 5
Measurement Parameter: RPU1, RPU2
0.01μF
VDD
XT
XTN
Q
VC
INHN VSS
IINHN
A
RPU1= (VDD-VINHN)/IINHN, VINHN= 0V
VINHN
V
RPU2= (VDD-VINHN)/IINHN, VINHN= 0.7VDD
SEIKO NPC CORPORATION - 10
5410 series
MEASUREMENT CIRCUIT 6
Measurement Parameter: RVC1, RVC2
IXT
A
0.01μF
VDD
A
XT
IXTN
XTN
Q
XT
XTN
VC
VC
INHN VSS
INHN VSS
RVC1=VDD/IXT
0.01μF
VDD
Q
RVC2=VDD/IXTN
MEASUREMENT CIRCUIT 7
Measurement Parameter: RVIN
IVIN
A
0.01μF
VDD
XT
XTN
Q
VC
INHN VSS
RVIN=VDD/IVIN
MEASUREMENT CIRCUIT 8
Measurement Parameter: DUTY, tr, tf, Pulling Range, CLOSC, VTOP, TBASE
Crystal
0.01μF
VDD
XT
XTN
VC
INHN VSS
Q
CL=15pF
(Including probe capacitance)
SEIKO NPC CORPORATION - 11
5410 series
MEASUREMENT CIRCUIT 9
Measurement Parameter: tOE, tOD
Crystal
0.01μF
VDD
1kΩ
XT
XTN
Q
VC
1kΩ
INHN VSS
Function
Generator
CL=15pF
(Including probe capacitance)
50Ω
MEASUREMENT CIRCUIT 10
Measurement Parameter: FM
Crystal
XT
XTN
Signal
Generator
(AFG3102)
VC input signal:
sine wave, 0 to VDD
Signal Source
Analyzer
(E5052A)
0.01μF
VDD
Q
VC
INHN VSS
EXT Trigger In
SEIKO NPC CORPORATION - 12
5410 series
REFERENCE DATA
The following characteristics are measured using the crystal below. Note that the characteristics will vary with the crystal used.
Crystal used for measurement
Crystal parameters
Parameter
5410Ax
5410Bx
fs (MHz)
39.98946
61.40941
C0 (pF)
1.3
3.2
γ(=C0/C1)
330
350
L1
C1
R1
C0
Frequency Pulling Range
Pulling Range [ppm] VC=1.65V Standard
180
150
120
90
60
30
0
-30
-60
-90
-120
-150
-180
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.0
3.3
Vc [V]
[5410Ax] VDD=3.3V, Ta=25°C, fOSC=40MHz, VC=1.65V
Pulling Range [ppm] VC=1.65V Standard
180
150
120
90
60
30
0
-30
-60
-90
-120
-150
-180
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.0
3.3
Vc [V]
[5410Bx] VDD=3.3V, Ta=25°C, fOSC=61.44MHz, VC=1.65V
Refer to “MEASUREMENT CIRCUIT8” for measurement circuit diagram.
SEIKO NPC CORPORATION - 13
5410 series
-60
-60
-70
-70
-80
Phase Noise [dBc/Hz]
Phase Noise [dBc/Hz]
Phase Noise
Vc=0V
Vc=1.65V
Vc=3.3V
-90
-100
-110
-120
-130
-140
-150
-80
-110
-120
-130
-140
-150
-160
-160
-170
1.E+01 1.E+02 1.E+03 1.E+04 1.E+05 1.E+06 1.E+07 1.E+08
-170
1.E+01
Offset Frequency [Hz]
Vc=0V
Vc=1.65V
Vc=3.3V
-90
-100
1.E+02
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
Offset Frequency [Hz]
[5410A1] VDD=3.3V, Ta=25°C, fOSC=40MHz, fOUT=40MHz
[5410A2] VDD=3.3V, Ta=25°C, fOSC=40MHz, fOUT=20MHz
Phas e Noise [dBc/Hz]
-60
-70
-80
-90
-100
-110
Vc=0V
Vc=1.65V
Vc=3.3V
-120
-130
-140
-150
-160
-170
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
Offset Frequency [Hz]
[5410A3] VDD=3.3V, Ta=25°C, fOSC=40MHz, fOUT=10MHz
SEIKO NPC CORPORATION - 14
-60
-60
-70
-70
-80
-80
Phase Noise [dBc/Hz]
Phase Noise [dBc/Hz]
5410 series
-90
-100
Vc=0V
Vc=1.65V
Vc=3.3V
-110
-120
-130
-140
-90
-100
Vc=0V
Vc=1.65V
Vc=3.3V
-110
-120
-130
-140
-150
-150
-160
-160
-170
1.E+01 1.E+02 1.E+03 1.E+04 1.E+05 1.E+06 1.E+07 1.E+08
-170
1.E+01
1.E+02
Offset Frequency [Hz]
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
Offset Frequency [Hz]
[5410B1] VDD=3.3V, Ta=25°C, fOSC=61.44MHz, fOUT=61.44MHz
[5410B2] VDD=3.3V, Ta=25°C, fOSC=61.44MHz, fOUT=30.72MHz
-60
Phase Noise [ d Bc/Hz]
-70
-80
-90
-100
Vc=0V
Vc=1.65V
Vc=3.3V
-110
-120
-130
-140
-150
-160
-170
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
Offset Frequency [Hz]
[5410B3] VDD=3.3V, Ta=25°C, fOSC=61.44MHz, fOUT=15.36MHz
Crystal
0.01μF
VDD
XT
0.01μF
XTN
Q
200Ω
Signal Source
Analyzer
(Agilent E5052A)
VC
INHN VSS
CL=15pF
Measurement circuit diagram
SEIKO NPC CORPORATION - 15
5410 series
Negative Resistance
0
-200
N egative R asis tance [Ω ]
-400
-600
-800
-1000
-1200
-1400
VC=0V
VC=1.65V
VC=3.3V
-1600
-1800
-2000
0
10
20
30
40
50
60
70
80
70
80
Frequency [MHz]
[5410Ax] VDD=3.3V, Ta=25°C, C0=0pF, boot
0
-100
VC=0V
VC=1.65V
VC=3.3V
Negative R asis tance [Ω ]
-200
-300
-400
-500
-600
-700
-800
-900
-1000
0
10
20
30
40
50
60
Frequency [MHz]
[5410Bx] VDD=3.3V, Ta=25°C, C0=0pF, boot
Network-Analyzer
(Agilent 4396B)
S-Parameter Test Set
(Agilent 85046A)
C0=0pF
0.01μF
VDD
XT
XTN
Q
VC
INHN VSS
Measurement circuit diagram
They were performed with Agilent 4396B using the NPC test jig.
They may vary in a measurement jig, and measurement environment.
SEIKO NPC CORPORATION - 16
5410 series
Equivalent Capacity (CLOSC) of Oscillation Circuit
7
6
CLOSC [pF]
5
4
3
2
1
0
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.0
3.3
2.7
3.0
3.3
Vc [V]
[5410Ax] VDD=3.3V, Ta=25°C, fOSC =40MHz
7
6
CLOSC [pF]
5
4
3
2
1
0
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
Vc [V]
[5410Bx] VDD=3.3V, Ta=25°C, fOSC =61.44MHz
CLOSC: Equivalent capacity of oscillation circuit requested from oscillation frequency
CLosc =
C1
2
⎛ f OSC ⎞
⎜⎜
⎟⎟ − 1
⎝ fs ⎠
− C0
C1: Equivalent series capacity of crystal unit
C0: Equivalent parallel capacity of crystal unit
fs: Series resonating frequency of crystal unit
Refer to “MEASUREMENT CIRCUIT8” for measurement circuit diagram.
SEIKO NPC CORPORATION - 17
5410 series
Drive Level
100
DL [μW]
80
60
40
20
0
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.0
3.3
3.0
3.3
Vc [V]
[5410Ax] VDD=3.3V, Ta=25°C, fOSC =40MHz
180
160
140
DL [μW]
120
100
80
60
40
20
0
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
Vc [V]
[5410Bx] VDD=3.3V, Ta=25°C, fOSC =61.44MHz
Crystal
Tektronix CT-6
Current Probe
0.01μF
VDD
XT
XTN
Q
IX'tal
VC
INHN VSS
CL=15pF
Measurement circuit diagram
SEIKO NPC CORPORATION - 18
5410 series
3
3
0
0
Fm [dB] 1kHz Standard
Fm [dB] 1kHz Standard
Maximum Modulation Frequency
-3
-6
-9
-3
A2
A3
-6
-9
-12
-12
1
10
1
100
[5410A1] VDD=3.3V, Ta=25°C, fOSC =40MHz
100
[5410A2,A3] VDD=3.3V, Ta=25°C, fOSC =40MHz
3
3
0
0
Fm [dB] 1kHz Standard
Fm [dB] 1kHz Standard
10
VC Input Frequency [kHz]
VC Input Frequency [kHz]
-3
-6
-9
-12
-3
-6
B2
B3
-9
-12
1
10
100
VC Input Frequency [kHz]
[5410B1] VDD=3.3V, Ta=25°C, fOSC =61.44MHz
1
10
100
VC Input Frequency [kHz]
[5410B2,B3] VDD=3.3V, Ta=25°C, fOSC =61.44MHz
Refer to “MEASUREMENT CIRCUIT10” for measurement circuit diagram.
SEIKO NPC CORPORATION - 19
5410 series
600
600
500
500
VC Input Impedance [k Ω]
VC Input Impedance [k Ω]
AC Input Impedance (VC pin)
400
300
200
A2
A3
A4
A5
400
300
200
100
100
0
0
0
10
20
30
40
50
60
70
VC　Input Frequency [kHz]
80
90
0
100
10
30
40
50
60
70
VC　Input Frequency [kHz]
80
90
100
[5410A2,A3,A4,A5] Ta=25°C, VC=0V
600
600
500
500
VC Input Impedance [k Ω]
VC Input Impedance [k Ω]
[5410A1] Ta=25°C, VC=0V
20
400
300
200
B2
B3
400
300
200
100
100
0
0
0
10
20
30
40
50
60
70
VC　Input Frequency [kHz]
[5410B1] Ta=25°C, VC=0V
80
90
100
0
10
20
30
40
50
60
70
VC　Input Frequency [kHz]
80
90
100
[5410B2,B3] Ta=25°C, VC=0V
VDD
XT
XTN
Impedance
Analyzer
(HP4194A)
Q
VC
INHN VSS
VC input signal: 1kHz to 100kHz, 0.1V p-p
Measurement circuit diagram
SEIKO NPC CORPORATION - 20
5410 series
Operating Current Consumption
2.0
1.5
I DD [mA]
A2
A5
A4
A1
A3
1.0
VC=0V
VC=1.65V
VC=3.3V
0.5
0.0
0
5
10
15
20
25
30
35
40
Output Frequency [MHz]
[5410Ax] VDD=3.3V, Ta=25°C
3.0
B1
2.5
B2
B3
IDD [mA]
2.0
1.5
VC=0V
VC=1.65V
VC=3.3V
1.0
0.5
0.0
10
15
20
25
30
35
40
45
50
55
60
65
Output Frequency [MHz]
[5410Bx] VDD=3.3V, Ta=25°C
Refer to “MEASUREMENT CIRCUIT1” for measurement circuit diagram.
SEIKO NPC CORPORATION - 21
5410 series
Frequency Deviation by Voltage
3
Vc=0V
Frequency Stability [ppm]
VDD=3.3V Standard
2
Vc=1.65V
Vc=3.3V
1
0
-1
-2
-3
2.97
3.14
3.30
VDD [V]
3.47
3.63
[5410Ax] VDD=3.3V, Ta=25°C, fOSC =40MHz
3
Vc=0V
Frequency Stability [ppm]
VDD=3.3V Standard
2
Vc=1.65V
Vc=3.3V
1
0
-1
-2
-3
2.97
3.14
3.30
VDD [V]
3.47
3.63
[5410Bx] VDD=3.3V, Ta=25°C, fOSC =61.44MHz
Crystal
0.01μF
VDD
XT
XTN
Q
VC
INHN VSS
CL=15pF
(Including probe capacitance)
Measurement circuit diagram
SEIKO NPC CORPORATION - 22
5410 series
Output Waveform
550mV
5.00ns
[5410A1] VDD=3.3V, VC=1.65V, Ta=25°C, fOSC =40MHz, CL=15pF
550mV
3.28ns
[5410B1] VDD=3.3V, VC=1.65V, Ta=25°C, fOSC =61.44MHz, CL=15pF
Refer to “MEASUREMENT CIRCUIT8” for measurement circuit diagram.
Measurement equipment: Oscilloscope Agilent DSO80604B
SEIKO NPC CORPORATION - 23
5410 series
Please pay your attention to the following points at time of using the products shown in this document.
1. The products shown in this document (hereinafter ”Products”) are designed and manufactured to the generally accepted standards of
reliability as expected for use in general electronic and electrical equipment, such as personal equipment, machine tools and
measurement equipment. The Products are not designed and manufactured to be used in any other special equipment requiring
extremely high level of reliability and safety, such as aerospace equipment, nuclear power control equipment, medical equipment,
transportation equipment, disaster prevention equipment, security equipment. The Products are not designed and manufactured to be
used for the apparatus that exerts harmful influence on the human lives due to the defects, failure or malfunction of the Products.
If you wish to use the Products in that apparatus, please contact our sales section in advance.
In the event that the Products are used in such apparatus without our prior approval, we assume no responsibility whatsoever for any
damages resulting from the use of that apparatus.
2. NPC reserves the right to change the specifications of the Products in order to improve the characteristics or reliability thereof.
3. The information described in this document is presented only as a guide for using the Products. No responsibility is assumed by us for any
infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise
under any patents or other rights of the third parties. Then, we assume no responsibility whatsoever for any damages resulting from that
infringements.
4. The constant of each circuit shown in this document is described as an example, and it is not guaranteed about its value of the mass
production products.
5. In the case of that the Products in this document falls under the foreign exchange and foreign trade control law or other applicable laws and
regulations, approval of the export to be based on those laws and regulations are necessary. Customers are requested appropriately take
steps to obtain required permissions or approvals from appropriate government agencies.
SEIKO NPC CORPORATION
1-9-9, Hatchobori, Chuo-ku,
Tokyo 104-0032, Japan
Telephone: +81-3-5541-6501
Facsimile: +81-3-5541-6510
http://www.npc.co.jp/
Email:sales@npc.co.jp
ND12007-E-02 2013.05
SEIKO NPC CORPORATION - 24