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KETEK GmbH
Hofer Str. 3
81737 München
Phone +49-89-673467-70
Fax +49-89-673467-77
KETEK GmbH
VITUS
Silicon Drift Detectors
.
.
.
.
User’s Manual
.
.
.
.
.
.
Steffen Pahlke
Rev. 3
Information furnished by KETEK is believed to be accurate and reliable.
However, no responsibility is assumed by KETEK for its use, nor for any
infringements of patents or other rights of third parties that may result from its
use. Specifications given in this document subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights
of KETEK. Trademarks and registered trademarks are the property of their
respective owners.
KETEK GmbH, Hofer Str. 3, D-81737 München, Germany
Tel: +49-(0)89-67346770
Fax: +49-(0)89-67346777
www.ketek.net
©2012 KETEK GmbH. All rights reserved.
KETEK VITUS SDD Manual
1. Table of Contents
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
17.
18.
19.
20.
21.
22.
Table of Contents............................................................................................................................ 3
Revision History .............................................................................................................................. 3
Features .......................................................................................................................................... 5
Applications ..................................................................................................................................... 5
Functional Block Diagram ............................................................................................................... 5
General Description ........................................................................................................................ 5
Safety .............................................................................................................................................. 6
General Restrictions ....................................................................................................................... 7
Specifications .................................................................................................................................. 8
Absolute Maximum Ratings ........................................................................................................ 9
Ambient Conditions .................................................................................................................. 10
ESD Caution ............................................................................................................................. 10
Pin Configuration and Functional Descriptions ........................................................................ 10
Typical Performance Characteristics ........................................................................................ 11
Theory of Operation .................................................................................................................. 17
Applications and Operations Information ................................................................................. 19
16.1. Wiring ................................................................................................................................... 19
16.2. Mechanical Connection ........................................................................................................ 19
16.3. Readout Circuit for Temperature Sensor ............................................................................. 20
16.4. Operating Voltages .............................................................................................................. 21
16.5. Preamplifier Design .............................................................................................................. 22
16.6. Peltier Characteristics .......................................................................................................... 23
Collimator ................................................................................................................................. 25
Outline Dimensions .................................................................................................................. 26
Footprint ................................................................................................................................... 27
Ordering Guide ......................................................................................................................... 28
Optional .................................................................................................................................... 28
Contact ..................................................................................................................................... 29
2. Revision History
11/07 – Revision 0: Initial Version
12/03 – Revision 1: Minor textual changes, accommodation of Specifications
12/08 – Revision 2: Minor textual changes, accommodation of Specifications
12/11 – Revision 3: Update Gain of SDD, update Typical Performance Characteristics due to new FET,
update spectral definitions
Rev. 3
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KETEK GmbH
KETEK VITUS SDD Manual
Rev. 3
Page 4 of 29
KETEK GmbH
KETEK VITUS SDD Manual
3. Features

Silicon Drift Detector

energy resolution down to 123eV FWHM at Mn-Kα

excellent peak-to-background

operable at an ambient temperature of up to +80°C with excellent performance

high count rate capability up to 1,000,000 cps

efficient integrated Peltier element

no liquid nitrogen cooling required

radiation hardness during more than 10 years standard count rate exposure

easy to use

active areas from 7 to 100mm² available
4. Applications

XRF

µ-XRF

EDX

EDS

TXRF

XRD

Handheld
5. Functional Block Diagram
Fig. 1: KETEK VITUS SDD Functional Block Diagram
6. General Description
KETEK VITUS Silicon Drift Detectors (SDD) are the state-of-the-art X-ray detectors based on silicon
substrates. Their typical X-ray energy range is between 0.2keV and 30keV. They are used in
applications such as EDX, EDS, XRF, TXRF in bench top as well as in handheld based systems. Due
to their wide operating temperature range they are especially suited for industrial and automotive
applications.
Rev. 3
Page 5 of 29
KETEK GmbH
KETEK VITUS SDD Manual
7. Safety
It is strongly recommended to read this user manual carefully and completely before installing or
activating the SDD. Please keep this user manual always with the system for that any operator can get
this important information. In case of resale – even when second hand – or in case of scrapping at the
end of lifetime this manual has to be given along with the system. Please handle the attached
documents “Beryllium Material Data Sheet” and “Statement of contamination…” the same way.
WARNING!
The detector contains a thin, fragile Be window. If this window is damaged, the detector
will be destroyed and cannot be repaired.
Be windows damaged due to improper handling are not covered under warranty.
This product uses – a very small amount - of toxic beryllium material at the inner side of
the detector foil. Beryllium is preferred as an entrance window coating because it
provides a light-tight seal and, further, does not introduce spurious peaks in the
measured spectrum. In normal operation there is no danger to get in contact with any
toxic materials. If the SDD window was destroyed by accident, follow our safety
instructions.
Scrapping at end of lifetime has to be done according to the (local) legal requirements.
Make the “Beryllium Material Data Sheet” available to your waste disposal contractor. Do
not scrap the SDD to your domestic waste.
Due to the very thin window foil you should take care neither to touch it with fingers nor
to bring other things or materials under test too near to it.
Keep away excessive dust particle streams from the SDD window.
Excessive electrostatic discharge might destroy the window. Take care ESD is well bled
off in your application.
Some of the SDD types are evacuated. A damaged entrance window may implode
scattering small beryllium particles in the immediate vicinity of the SDD. In this case,
rigorously clean the SDD and its surrounding area following all the precautions
mentioned in the “Beryllium Material Safety Data Sheet”.
Always keep the SDD protection cap with the system, even if fixed mounted. It’s
necessary for cleaning, service and shipping to be able to protect the beryllium window.
CAUTION!
High voltages need to be applied to the detector for use. To prevent electrical shock, do
not touch the detector.
Do not drop or cause mechanical shock to the detector. Components inside the detector
are mechanically fragile and may be damaged if the unit is dropped.
Avoid temperature shocks. If the detector is out of allowed temperature range, make
sure to acclimate slowly.
Avoid air pressure shocks. Especially in evacuated applications take care to ventilate
slowly.
Let the protection cap be mounted at the SDD as long as the system isn’t mounted in its
end application. Your end application has to be designed that way to make unexpected,
damaging contact with the SDD window impossible. Make sure your samples under test
might never touch the SDD window.
Do not remove the protective cap from the detector until data is to be taken. The detector
window is made from thin beryllium which is extremely brittle and can shatter very easily.
Do not have any object come in contact with the window. Do not touch the detector
because the oil from the fingers will cause it to oxidize. Use gloves. The window cannot
be repaired. If the window is damaged the detector assembly must be replaced. Be
windows damaged due to improper handling will not be covered under warranty. Keep
the protective cover nearby at all times and cover the detector when the instrument is not
in use.
Rev. 3
Page 6 of 29
KETEK GmbH
KETEK VITUS SDD Manual
Radiation damage to the detector will occur if it is exposed to a high flux environment.
Synchrotron Radiation Beams should be modified with attenuators before they are
allowed to strike the detector or the fluorescence target. Damage to the detector will be
permanent if the flux from an X-Ray Tube, a strong nuclear radiation source, or an
accelerator is not attenuated.
No user serviceable parts inside the units. Refer servicing to KETEK GmbH. To prevent
electrical shock, do not remove covers.
Keep the device dry and clean!
Warranty
KETEK GmbH warrants to the original purchaser this instrument to be free from defects in materials
and workmanship for a period of one year from shipment. KETEK GmbH will, without charge, repair or
replace (at its option) a defective instrument upon return to the factory. This warranty does not apply in
the event of misuse or abuse of the instrument or unauthorized alterations or repair. KETEK GmbH
shall not be liable for any consequential damages, including without limitation, damages resulting from
the loss of use due to failure of this instrument. All products returned under the warranty must be
shipped prepaid to the factory with documentation describing the problem and the circumstances
under which it was observed. Additionally the statement of contamination must be filled out completely
and returned with the product. KETEK must be notified prior to return shipment. The instrument will be
evaluated, repaired or replaced, and promptly returned if the warranty claims are substantiated. A
nominal fee will be charged for unsubstantiated claims. Please include the model and serial number in
all correspondence with KETEK.
Care Instructions
Do not clean the SDD under any circumstances. Do not use any alcoholic, acid or rubbing cleaning
agents.
8. General Restrictions and Recommendations
Rev. 3
-
do not use detector without heat sink connection. Overheating will destroy the module
-
do not solder the pins or any other part of the detector module
-
avoid touching the detector module
-
use gloves to avoid corrosion
-
avoid touching the entrance window of the detector module. It contains hazardous materials
Page 7 of 29
KETEK GmbH
KETEK VITUS SDD Manual
9. Specifications
Parameter
VOLTAGES
R1
RX
BACK
FET-Substrate/Bulk
Drain
CURRENTS
R1 = RX
BACK*
Drain
Temp.-Sensor
PELTIER (TEC)
Voltage
Current
Voltage
Current
Gain
Conditions/Comments
measured before filtering
Min
Typ
Max
Tolerance
-25
-160
-100
-7
1
-20
-130
-65
-4
3
-5
-80
-35
-2
4
±1
±5
±2
±1
±0.1
V
V
V
V
V
10
20
at maximum cooling
1
2
2
3
4
0.1
1
5
-35°C operating temp @ 20°C heat sink temp.
H7 / H20 / H30 / H50
1.6
1.7
1.8
H7 / H20 / H30 / H50
250
300
350
maximum cooling @ 20°C heat sink temp.
H7 / H20 / H30 / H50
3.0
3.3
3.6
H7 / H20 / H30 / H50
600
650
700
0.9
±5
±0.1
±0.1
±0.1
µA
nA
mA
µA
±0.1
±10
V
mA
5
±0.1
±10
±30%
Unit
V
mA
mV/keV
* Back voltage absolute value should not exceed one half of the RX voltage absolute value by more than 10V
These specifications refer to the whole VITUS SDD class. Please refer to the individual SDD
datasheet for detailed information.
Rev. 3
Page 8 of 29
KETEK GmbH
KETEK VITUS SDD Manual
10. Absolute Maximum Ratings
Parameter
VOLTAGES
R1
RX
BACK*
FET-Substrate/Bulk
Peltier H7/H20/H30/H50
Peltier H80
Peltier H7LE/H15LE/H20LE
CURRENTS
RX
Drain
Temp.-Sensor
Peltier H7/H20/H30/H50
Peltier H80
Peltier H7LE/H15LE/H20LE
Radiation Hardness @17keV
Torque
Stresses beyond those listed under Absolute
Rating
Maximum Ratings may cause permanent
≥ -30V
≥ -180V
≥ -100V
≥ -15V
≤ 3.6V
≤ 4.5V
≤ 4V
damage to the device. This is a stress rating
only; functional operation of the device at these
or any other conditions above those indicated
in the applications and operations section of
this specification is not implied. Exposure to
absolute
≤ 1mA
≤ 10mA
≤ 50µA
≤ 700mA
≤ 1000mA
≤ 900mA
12
≤ 10 Photons
≤ 0.8Nm
maximum
rating
conditions
for
extended periods may affect device reliability.
* Back voltage absolute value should not exceed one half of
the RX voltage absolute value by more than 10V
Rev. 3
Page 9 of 29
KETEK GmbH
KETEK VITUS SDD Manual
11. Ambient Conditions
Parameter
OPERATING
Temperature
Humidity
Pressure
Pressure Change
STORAGE
Temperature
Humidity
Min
Max
Unit
0
10
0
60
80
1.1
100
°C
% RH
atm
mbar/s
0
10
60
90
°C
% RH
Conditions
non condensing
non condensing
12. ESD Caution
ESD (Electrostatic Discharge) sensitive device.
Charged devices and circuit boards can discharge without
detection. Although this product features patented or proprietary
protection circuitry, damage may occur on devices subjected to
high energy ESD. Therefore, proper ESD precautions should be
taken to avoid performance degradation or loss of functionality.
13. Pin Configuration and Functional Descriptions
VITUS H7, H20, H30, H50
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
Rev. 3
Description
Temp Sensor - /GND
Temp Sensor +
Ring 1
Back
Reset
FET-Substrate / Bulk
Source
Drain
Feedback
Peltier +
Ring X
Peltier -
VITUS H80, R100
Mnemonic
TD- /GND
TD+
R1
BK
RES
SUB / BULK
FFS
FFD
FB
P+
RX
P-
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
Page 10 of 29
Description
Peltier Ring X
Feedback
Peltier +
Drain
Source
Reset
FET-Substrate / Bulk
Back
Ring 1
Temp Sensor +
Temp Sensor - /GND
Mnemonic
PRX
FB
P+
FFD
FFS
RES
SUB / BULK
BK
R1
TD+
TD- /GND
KETEK GmbH
KETEK VITUS SDD Manual
14. Typical Performance Characteristics
Fig. 2: Typical KETEK VITUS Silicon Drift Detector Spectrum of H7 active area type SDD with an Fe-55 source,
taken with a KETEK preamplifier and a digital pulse processor.
Fig. 3: Definition of Peak-to-Background (P/B) and Peak-to-Tail (P/T) of a typical spectrum
taken with a KETEK preamplifier and a digital pulse processor.
Rev. 3
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KETEK VITUS SDD Manual
1.0
0.9
0.8
Transmission
0.7
0.6
8 µm
12.5 µm
25 µm
0.5
0.4
0.3
0.2
0.1
0.0
500
1000
1500
2000
2500
3000
Photon energy (eV)
Fig. 4: Typical transmission of KETEK Silicon Drift Detectors with different Beryllium entrance window thickness
Fig. 5: Typical transmission of KETEK Silicon Drift Detectors with low energy AP3.3 entrance window
Fig. 6: Typical absorption efficiency of KETEK Silicon Drift Detectors with a thickness of 450µm and 8µm Beryllium window
Rev. 3
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KETEK VITUS SDD Manual
Fig. 7: Typical control range of Silicon Drift Detector chip temperature at different ambient temperatures
Fig. 8: Typical calculated energy resolutions of Silicon Drift Detectors for low energies
Fig. 9: Typical Input to Output Count Rate Ratio (Throughput) for different Peaking Times
taken with a KETEK VITUS H30 SDD and an XIA Mercury Digital Pulse Processor
Rev. 3
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KETEK VITUS SDD Manual
H7
H20
H30
H50
H80
H7-LE
H15-LE
Fig. 10: Typical KETEK VITUS Silicon Drift Detector Spectrum with an Fe-55 source,
taken with an KETEK preamplifier and an XIA Mercury digital pulse processor for the different VITUS active areas.
Rev. 3
Page 14 of 29
KETEK GmbH
KETEK VITUS SDD Manual
H7
H15 / H20
H30
H50
H80
Fig. 11: Typical energy resolution for different chip operating temperatures dependent on the Peaking Time for different SDD
sizes.
Rev. 3
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KETEK VITUS SDD Manual
H7
H15 / H20
H30
H50
H80
Fig. 12: Typical energy resolution for different input count rates dependent on the Peaking Time for different SDD sizes.
Rev. 3
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15. Theory of Operation
The silicon bulk of the Silicon Drift Detector (SDD) has to be depleted completely to make the sensor
sensitive for incoming photons. By applying a negative voltage to the back contact of the SDD, the
detector bulk is completely depleted. An incoming photon will generate a number of electrons and
holes dependent on its energy. The holes drift to the back side of the detector formed by the large
area back contact whereas the electrons drift to the anode where the accumulated charge can be
measured or read out. The drift field for the electrons is applied by a ring structure on one side of the
SDD with a negative voltage at the outer ring (Ring X) and a voltage close to 0V at the innermost ring
(Ring 1).
Fig. 13: Silicon Drift Detector potential diagram
The anode is connected to: a) the gate of the first field effect transistor (FET), b) the feedback
capacitance (CFB) and c) the cathode of the reset diode (D RES). The combination of a) and b), the FET
and the feedback capacitance, respectively, forms the first part of a charge sensitive amplifier, used to
read out the accumulated electrical charge. The combination forms a transimpedance (current to
voltage) and an integrator when connected to the subsequent stages of the pre-amplifier. Therefore
the source of the FET has to be connected to ground and the drain voltage and current need to be set
appropriately (typically 3V and 3mA). The operating point of the FET is optimized by setting its bulk or
substrate voltage.
GND
UOR
Driftfield
UIR
Anode
-V
UBACK
Homogeneous thin entrance window
Fig. 14: Silicon Drift Detector schematic
Rev. 3
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KETEK VITUS SDD Manual
The FET is operated in a common source configuration. The leakage current sensed at the FET gate
causes a ramp signal at the output of the pre-amplifier. The slope of the ramp signal, and thus its
frequency, is dependant on the operating temperature. The incoming photons generate short current
pulses, with a certain rise time (dependant on the location of interaction of the x-ray with the SDD
chip), and a certain duration and amplitude (dependent on the energy of the incoming photon). In turn,
these short pulses generate steps superimposed on the pre-amplifier’s ramped output signal. The
height of a step contains the information necessary to determine the energy of the interacting photon.
1,5
Preamp Out
Reset Out
1
Amplitude [V]
0,5
0
-0,5
-1
-1,5
0
5
10
15
20
Time [ms]
Fig. 15: Typical KETEK Preamplifier Output Signal including Preamplifier Reset Pulse Output
using a KETEK VITUS SDD irradiated with an Fe-55 Source at -35°C Operating Temperature
0,04
Amplitude [V]
0
-0,04
-0,08
Preamp
Out
-0,12
-0,16
0
20
40
60
80
100
120
Time [µs]
Fig. 16: Zoom of Figure 15, typical KETEK Preamplifier Output Signal including Preamplifier Reset Pulse Output
using a KETEK VITUS SDD irradiated with an Fe-55 Source at -35°C Operating Temperature showing step like pulses
Rev. 3
Page 18 of 29
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KETEK VITUS SDD Manual
16. Application and Operation Information
For (optimal) operation, SDDs require the application of several voltages and integration with a charge
sensitive amplifier and other pulse forming electronics (either analog or digital). Typically, a high
voltage DC power supply feeds the drift ring voltages; a high current, linearly regulated, low voltage
power supply feeds the Peltier element; and a bipolar, linearly regulated power supply feeds the
charge sensitive amplifier and pulse forming electronics.
The drift ring voltages can be generated from a filtered high voltage rail, by using several voltage
dividers. Each detector may have individual ring currents. Thus potentiometers should be used for
voltage adjustments as the voltage drop at the voltage dividers depends on the ring currents.
Fig. 17: KETEK Silicon Drift Detector connected to typical preamplifier board – block diagram
The Peltier power supply should be regulated with a PI/PID loop to keep the operating temperature of
the SDD chip stable. Therefore it is necessary to read out the temperature sensor of the SDD.
16.1.
Wiring
The SDD should be placed as close as possible to the preamplifier. It is recommended to shield at
least the preamplifier connections. It is strongly recommended using a single point ground. Please
note that also the housing of the SDD should be connected to ground.
16.2.
Mechanical Connection
WARNING: Do not operate the detector without proper heat sink connection.
Overheating of the detector will destroy the module.
It is strongly recommended to install the detector connected to a proper heat sink. Dimensioning the
heat sink is dependant on ambient temperature, air ventilation, operating temperature of the SDD,
surface area and its condition. The guaranteed operating temperature is always related to the heat
sink temperature. Therefore the minimum operating temperature can vary and is directly dependant on
the quality of the heat sink interconnection.
Rev. 3
Page 19 of 29
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KETEK VITUS SDD Manual
16.3. Read out Circuit for Temperature Sensor
a) Temperature Diode:
Using a diode as temperature sensor leads to a linear relationship between the measured voltage and
sensor temperature. The line’s slope depends on the diode bias current. For the recommended 1µA,
the slope is 2.35mV/K. It is recommended to apply a constant current.
b) Thermistor (NTC resistor):
In case of the thermistor the temperature function is given by the following equation:
1
3
 1.129241  103  2.341077  10 4  ln( R)  8.775468  108  ln( R) 
T
The function is shown in the following plot. At 25°C the resistance is 10kΩ.
1E7
Resistance [Ohm]
1000000
100000
10000
1000
100
-100
-50
0
50
100
150
Temperature (°C)
Fig. 18: Temperature function of a thermistor as SDD temperature sensor
To read out the temperature sensor, the following schematic is recommended. Although a diode (D1)
is shown in the schematic, it may be replaced with a thermistor (say, Rt); the equations given below
apply, if D1 is replaced with Rt. R4 limits the maximum current through the temperature sensor and
should be set as follows:
R4 
U
V1

I I ( D1)
For example: The voltage V1 is +5V and the current I(D1) should be 1µA. This leads to R4=5MΩ.
R1 and R2 form a voltage divider representing the offset voltage. They can be used to set the circuit’s
signal swing, given the operational demands on the SDD, e.g. if an ADC is used to digitize the voltage,
tuning R1 and R2 would ensure the desired temperature range corresponds to voltage values in the
ADC’s range.
R1, R2 and R3 determine the gain of the circuit. The gain can be calculated as follows:
A 1
Rev. 3
R3
( R1 R 2)
Page 20 of 29
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KETEK VITUS SDD Manual
Fig. 19: Typical Read out Circuit for temperature sensors with linearization, offset correction and gain.
16.4.
Operating Voltages
Several voltages are needed for operating the detector (exact values are given in each detector data
sheet), for example:
1.
Ring 1
= approx. -20V
2.
Ring X
= approx. -130V
3.
Back
= approx. -65V
The detector voltages should be filtered using the following combinations of resistors and capacitors
providing low pass filters:
1.
Ring 1:
RR1 = 15kΩ,
CR1 = 220nF
2.
Ring X:
RRX = 500kΩ,
CRX = 47nF/250V
3.
Back:
RBack = 1MΩ,
CBack = 47nF/250V
Fig. 20: Operating voltages filtering block diagram
Rev. 3
Page 21 of 29
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KETEK VITUS SDD Manual
Before switching on the system, the output-signal of the preamplifier and the shaped signal should be
connected to an oscilloscope.
The preamplifier operating voltage must be switched on first.
The detector voltages should be switched on in the following order:
R1 – RX – Back
The voltages to be applied must be set according to the detector datasheet. Typical currents flowing
are several μA through Ring 1 and Ring X (voltage divider) and approx. 1nA for the back contact if the
back voltage is applied. R1 and RX currents should be equal!
After switching on the detector voltages the signal of the preamplifier should show a ramp. The ramp
period depends on the chip temperature. At -35°C the ramp period should be in the range of several
microseconds.
16.5.
Preamplifier Design
For the design of the preamplifier it is recommended to use the FET in the common source
configuration. Therefore the source of the FET can be connected directly to signal ground. The drain
drives the signal. The substrate or bulk should be adjusted to the value given in the datasheet of each
single SDD. Also a low pass filter should be used to suppress any noise. Typical values are:
Substrate/Bulk: RSUB = 10kΩ,
CSUB = 4.7µF/16V Tantalum, low ESR
The drain can be driven by a simple current source formed by a resistor. Additional low pass filtering is
mandatory. Tantalum capacitor with low ESR of at least 100µF should be chosen.
The Drain and Feedback lines should be well separated to avoid any ringing or crosstalk. It is
recommended to shield at least one of the above lines.
The Reset circuit should include a current limiter. This will protect the sensitive reset diode mechanism
inside the SDD. It is recommended to use an in-line resistor of at least 2kΩ.
Fig. 21: Preamplifier connection block diagram
Rev. 3
Page 22 of 29
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KETEK VITUS SDD Manual
16.6.
Peltier Characteristics
The KETEK Silicon Drift Detectors are provided in three different performance grades, based on the
package’s internal atmosphere and size: evacuated TO-8 packages (H7, H20, H30, and H50);
evacuated non-TO-8 packages for larger devices (H80, R100); and, low-energy, nitrogen filled TO-8
packages (H7-LE, H15-LE). The three types have different cooling capabilities because of the
different internal atmosphere (vacuum or nitrogen) and different sizes.
4
H7-LE
3
H80
Power [W]
H7
2
1
0
-60
-50
-40
-30
-20
-10
0
10
20
Temperature [°C]
Fig. 22: Typical power consumption of the three different KETEK VITUS SDDs
It is strongly recommended to limit the current as mentioned in chapter “10. Absolute Maximum
Ratings”. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. Functional operation of the device at these or any other conditions above those
indicated in the applications and operations section of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Please note that the behaviour of the Peltiers can vary with changed ambient temperatures. The
efficiency of the Peltier elements is increasing approximately by 0.5K for each Kelvin of increasing
ambient temperature. Additionally the step response factor will change which will influence the
parameters of the control loop for the regulation of the operating temperature.
Rev. 3
Page 23 of 29
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KETEK VITUS SDD Manual
20
10
0
100mA
Temperature [°C]
-10
-20
200mA
-30
300mA
-40
400mA
-50
500mA
700mA
-60
0
50
100
150
200
250
300
350
400
Time [s]
Fig. 23: Typical H7 step response functions for different Peltier currents
using a diode as temperature sensor with 1µA operating current and 10V compliance voltage.
20
10
100mA
0
Temperature [°C]
200mA
-10
300mA
-20
400mA
500mA
-30
600mA
700mA
-40
800mA
900mA
-50
1000mA
-60
0
50
100
150
200
250
300
350
400
Time [s]
Fig. 24: Typical H80 step response functions for different Peltier currents
using a diode as temperature sensor with 1µA operating current and 10V compliance voltage.
20
100mA
Temperature [°C]
0
200mA
300mA
400mA
-20
500mA
600mA
700mA
900mA
-40
-60
0
50
100
150
200
250
300
350
400
Time [s]
Fig. 25: Typical H7-LE step response functions for different Peltier currents
using a diode as temperature sensor with 1µA operating current and 10V compliance voltage.
Rev. 3
Page 24 of 29
KETEK GmbH
KETEK VITUS SDD Manual
17. Collimator
The KETEK Multilayer Collimator consists of a Tantalum (Ta) foil covered with stacked layers of
Chromium (Cr), Titanium (Ti) and Aluminium (Al). The purity of the layers is ≥99%.
All collimators are mounted on-chip.
Fig. 26: KETEK multi-layer collimator
Optionally, KETEK offers an external outer clip-on collimator VPROTECT. Depending on the
application, the geometry of the x-ray beam can differ. To avoid any foreign absorption or fluorescence
the additional collimator can optimize the beam geometry.
Fig. 27: KETEK additional external clip-on collimator
Rev. 3
Page 25 of 29
KETEK GmbH
KETEK VITUS SDD Manual
18. Outline Dimensions
H7LE
H15LE
Ø
4.78
H7
H20
H30
H50
H80
R100
Fig. 28: Outline dimensions of the different KETEK VITUS Silicon Drift Detector types
Rev. 3
Page 26 of 29
KETEK GmbH
KETEK VITUS SDD Manual
19. Footprint
For H7, H20, H30, H50 SDDs: (Bottom View), M4x6 Screw
Mating connectors:
-
Type Tyco Electronics/AMP 6-5330808-5
For H80 and R100 SDDs: (Bottom View), M6x8 Screw
Mating connectors:
Rev. 3
-
Type Tyco Electronics/AMP 2-5331272-3
-
Type Tyco Electronics/AMP 2-5331272-7
Page 27 of 29
KETEK GmbH
KETEK VITUS SDD Manual
20. Ordering Guide
Encapsulation
Window
Cap
material
Collimator
-
Active area
-
window
Chip entrance
O
Temp. Sensor
2
Peltier
F
FET
5
450µm
Chip thickness
Product VITUS
V
Example:
V5F2T0-H30-ML8BEV: VITUS 450µm SDD Chip with low capacitance FET and a Thermistor as
temperature sensor, active area of 30mm² with high peak-to-background ratio, multilayer collimator in
a bevelled cap with a Be window sealed under vacuum.
21. Optional
Optional available are different KETEK products in combination with the VITUS Silicon Drift Detector:
-
KETEK Preamplifier: High performance stand-alone preamplifier for SDD applications
-
KETEK VICO: VITUS Components, -PA: Preamplifier, -TC: TEC/Peltier Controller, -HV: High
Voltage Power Supply, -DP: Digital Pulse Processor, -EV: Evaluation Board
-
KETEK VIAMP: VITUS SDD in combination with preamplifier
-
KETEK AXAS: Analytical X-ray Acquisition System
-
KETEK VPROTECT: external collimator
For detailed information please contact KETEK Sales and Marketing Office.
Rev. 3
Page 28 of 29
KETEK GmbH
KETEK VITUS SDD Manual
22. Contact
KETEK Headquarter Sales Office
KETEK GmbH
Hofer Str. 3
81737 München
Email
info@ketek.net
Phone +49 (0) 89 673467 75
Fax
+49 (0) 89 673467 77
www.ketek.net
Rev. 3
Page 29 of 29
KETEK GmbH