SUM60N04-05C
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET with Current Sense Terminal
FEATURES
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
ID (A)
40
0.0054 at VGS = 10 V
60a
• TrenchFET® Power MOSFET Plus
Temperature Sensing Diode
• 175 °C Junction Temperature
• New Low Thermal Resistance Package
D2PAK-5
D (Tab, 3)
1 2 3 4 5
(1)
(2)
G
KELVIN
(4)
SENSE
G
D
KELVIN
S
S (5)
SENSE
Ordering Information: SUM60N04-05C
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)d
TC = 25 °C
TC = 100 °C
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)d
Avalanche Current
Single Pulse Avalanche Energy
b
Maximum Power Dissipationa
L = 0.1 mH
TC = 25 °C
TA = 25 °C
Operating Junction and Storage Temperature Range
ID
Unit
V
60a
60a
IDM
250
IS
60a
IAS
60a
EAS
180
A
mJ
c
PD
200
3.75d
W
TJ, Tstg
- 55 to 175
°C
Symbol
Limit
Unit
RthJA
40
RthJC
0.75
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambientd
Junction-to-Case
PCB Mountd
°C/W
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
Document Number: 72370
S-71599-Rev. C, 30-Jul-07
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SUM60N04-05C
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
V(BR)DSS
VGS = 0 V, ID = 250 µA
40
VGS(th)
VDS = VGS, IDS = 250 µA
2.5
IGSS
VDS = 0 V, VGS = ± 20 V
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
± 100
VDS = 40 V, VGS = 0 V
1
VDS = 40 V, VGS = 0 V, TJ = 125 °C
50
VDS = 40 V, VGS = 0 V, TJ = 175 °C
500
ID(on)
VDS = 5 V, VGS = 10 V
120
VGS = 10 V, ID = 25 A
Drain-Source On-State Resistancea
4.5
gfs
µA
0.0054
0.0088
VGS = 10 V, ID = 25 A, TJ = 175 °C
Forward Transconductancea
nA
A
0.0043
VGS = 10 V, ID = 25 A, TJ = 125 °C
rDS(on)
V
Ω
0.011
VDS = 15 V, ID = 20 A
35
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reversen Transfer Capacitance
Crss
Total Gate Chargec
Qg
c
Gate-Source Charge
c
Gate-Drain Charge
Qgd
Rg
Turn-On Delay Time
Rise Timec
Turn-Off Delay Timec
Fall Timec
115
td(off)
150
VDS = 20 V, VGS = 10 V, ID = 25 A
35
f = 1 MHz
2.2
15
20
VDD = 20 V, RL = 0.8 Ω
ID ≅ 25 A, VGEN = 10 V, RG = 2.5 Ω
150
210
60
85
80
110
nC
35
td(on)
tr
pF
1100
630
Qgs
Gate Resistance
c
6400
VGS = 0 V, VDS = 25 V, f = 1 MHz
tf
Ω
ns
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b
IS
60
Pulsed Current
ISM
200
Forward Voltagea
VSD
Continuous Current
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 60 A, VGS = 0 V
1.0
1.5
V
45
70
ns
IF = 60 A, di/dt = 100 A/µs
2.5
5
A
0.06
0.18
µC
1880
2100
trr
IRM(REC)
A
Qrr
Current Sense Characteristics
Current Sense Ratio
Mirror Active Resistance
r
ID = 3.5 A, VGS = 10 V, RSENSE = 2 Ω
rm(on)
VGS = 10 V, ID = 10 mA
1660
5.5
Ω
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72370
S-71599-Rev. C, 30-Jul-07
SUM60N04-05C
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
200
200
VGS = 10 thru 7 V
150
6V
I D - Drain Current (A)
I D - Drain Current (A)
150
100
50
100
TC = 125 °C
50
5V
25 °C
- 55 °C
4V
0
0
0
2
4
6
8
10
0
1
2
3
4
5
6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
7
0.008
200
TC = - 55 °C
r DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
160
25 °C
120
125 °C
80
40
VGS = 10 V
0.004
0.002
0.000
0
0
20
40
60
80
100
0
120
20
40
60
80
100
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
120
20
8000
V GS - Gate-to-Source Voltage (V)
10000
C - Capacitance (pF)
0.006
Ciss
6000
4000
Coss
2000
Crss
0
VGS = 20 V
ID = 25 A
16
12
8
4
0
0
4
8
12
16
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 72370
S-71599-Rev. C, 30-Jul-07
20
0
40
80
120
160
200
240
Qg - Total Gate Charge (nC)
Gate Charge
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SUM60N04-05C
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
100
VGS = 10 V
ID = 25 A
I S - Source Current (A)
r DS(on) - On-Resistance
(Normalized)
1.6
1.2
0.8
TJ = 150 °C
10
TJ = 25 °C
0.4
0.0
- 50
1
- 25
0
25
50
75
100
125
150
175
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ - Junction Temperature ( °C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000
55
ID = 250 µA
52
V (BR)DSS (V)
I Dav (a)
100
IAV (A) at TA = 150 °C
10
49
46
IAV (A) at TA = 25 °C
1
43
40
- 50
0.1
0.00001
0.001
0.0001
0.1
0.01
1
- 25
0
25
50
75
100
125
tin (Sec)
TJ - Junction Temperature (°C)
Avalanche Current vs. Time
Drain Source Breakdown
vs. Junction Temperature
175
1000
70
60
10 µs
50
I D - Drain Current (A)
I D - Drain Current (A)
150
40
30
20
Limited
by rDS(on)
100
1 ms
10 ms
10
100 ms
DC
TC = 25 °C
Single Pulse
1
10
0
100 µs
0.1
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
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175
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
Safe Operating Area
Document Number: 72370
S-71599-Rev. C, 30-Jul-07
SUM60N04-05C
Vishay Siliconix
THERMAL RATINGS
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
10
25
8
20
r DS(on) - On-Resistance (Ω)
r DS(on) - On-Resistance (Ω)
SENSE DIE TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
VGS = 10 V
6
4
2
0
0.00
0.02
0.04
0.06
ISENSE (A)
0.08
0.10
ID = 10 mA
15
10
5
0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-Source Voltage
On-Resistance vs. Sense Current
5000
4000
RS = 5 Ω
3000
RS = 6 Ω
Ratio
G
RS = 2 Ω
2000
VG
RS = 1 Ω
1000
SENSE
S
KELVIN
RS
0
0
4
8
12
16
VGS - Gate-to-Source Voltage (V)
20
Current Ratio (I(MAIN)/IS) vs. Gate-Source Voltage (Figure 1)
Figure 1.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72370.
Document Number: 72370
S-71599-Rev. C, 30-Jul-07
www.vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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