QFET
®
FQH90N10V2
100V N-Channel MOSFET
Features
Description
• 105A, 100V, RDS(on) = 10mΩ @VGS = 10 V
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
• Low gate charge ( typical 147 nC)
• Low Crss ( typical 300 pF)
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for DC to DC
converters, sychronous rectification, and other applications lowest Rds(on) is required.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
D
G
TO-247
G D
S
FQH Series
S
Absolute Maximum Ratings
Symbol
Parameter
FQH90N10V2
Unit
100
V
105
78
A
A
(Note 1)
420
A
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
±30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
2430
mJ
IAR
Avalanche Current
(Note 1)
105
A
EAR
Repetitive Avalanche Energy
(Note 1)
33
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
4.5
V/ns
330
2.2
W
W/°C
-55 to +175
°C
300
°C
(TC = 25°C)
- Derate above 25°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink
RθJA
Thermal Resistance, Junction-to-Ambient
©2005 Fairchild Semiconductor Corporation
FQH90N10V2 Rev. A
1
Min.
Max.
Unit
--
0.45
°C/W
0.24
--
°C/W
--
40
°C/W
www.fairchildsemi.com
FQH90N10V2 100V N-Channel MOSFET
October 2005
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
HV290N10
FQH90N10V2
TO-247
-
-
30
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max Units
100
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
--
0.1
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 100V, VGS = 0V
VDS = 80V, TC = 150°C
---
---
1
10
µA
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
2.0
--
4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 52.5A
--
8.5
10
mΩ
gFS
Forward Transconductance
VDS = 40V, ID = 52.5A
--
72
--
S
--
4730
6150
pF
--
1180
1530
pF
--
300
390
pF
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 100V, ID = 90A
RG = 25Ω
(Note 4, 5)
VDS = 80V, ID = 90A
VGS = 10V
(Note 4, 5)
--
52
114
ns
--
492
994
ns
--
304
618
ns
--
355
720
ns
--
147
191
nC
--
28
--
nC
--
60
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
105
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
420
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 105A
--
--
1.4
V
trr
Reverse Recovery Time
--
114
--
ns
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 90A
dIF/dt =100A/µs
--
0.54
--
µC
(Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.22mH, IAS = 105A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 105A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FQH90N10V2 Rev. A
2
www.fairchildsemi.com
FQH90N10V2 100V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
2
10
2
10
ID, Drain Current [A]
ID, Drain Current [A]
Top :
175°C
25°C
1
10
-55°C
0
10
* Notes :
1. VDS = 40V
* Notes :
1. 250µs Pulse Test
2. TC = 25°C
1
10
10
-1
0
2. 250µs Pulse Test
10
1
10
10
-1
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
30
2
IDR, Reverse Drain Current [A]
RDS(ON) [mΩ],
Drain-Source On-Resistance
25
VGS = 10V
20
15
VGS = 20V
10
5
* Note : TJ = 25°C
0
10
1
10
175°C
25°C
0
10
* Notes :
1. VGS = 0V
2. 250µs Pulse Test
-1
0
100
200
300
400
500
10
600
0.2
0.4
0.6
ID, Drain Current [A]
1.6
Coss = Cds + Cgd
Crss = Cgd
VGS, Gate-Source Voltage [V]
10
8000
Capacitance [pF]
1.4
12
Ciss = Cgs + Cgd (Cds = shorted)
9000
Ciss
7000
6000
Coss
5000
4000
* Notes ;
1. VGS = 0 V
3000
Crss
2000
2. f = 1 MHz
1000
VDS = 50V
VDS = 80V
8
6
4
2
* Note : ID = 90A
0
10
0
1
10
VDS, Drain-Source Voltage [V]
FQH90N10V2 Rev. A
1.2
Figure 6. Gate Charge Characteristics
11000
0
-1
10
1.0
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
10000
0.8
0
20
40
60
80
100
120
140
160
QG, Total Gate Charge [nC]
3
www.fairchildsemi.com
FQH90N10V2 100V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2. ID = 250µA
2.0
1.5
1.0
* Notes :
1. VGS = 10 V
0.5
2. ID = 45 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
-50
0
TJ, Junction Temperature [°C]
Figure 9. Maximum Safe Operating Area
10
80
1 ms
ID, Drain Current [A]
ID, Drain Current [A]
200
90
100 µs
2
10 ms
DC
1
10
* Notes :
1. TC = 25°C
0
150
100
10 µs
10
100
Figure 10. Maximum Drain Current
vs. Case Temperature
Operation in This Area
is Limited by R DS(on)
3
10
50
TJ, Junction Temperature [°C]
2. TJ = 175°C
70
60
50
40
30
20
3. Single Pulse
10
-1
10
0
10
1
2
10
0
25
10
VDS, Drain-Source Voltage [V]
50
75
100
125
150
175
TC, Case Temperature [°C]
Figure 11. Transient Thermal Response Curve
ZθJC(t), Thermal Response
10
0
D =0.5
10
-1
0 .2
* N ote s :
1 . Z θ JC (t) = 0 .45 ° C /W M a x.
0 .1
3 . T J M - T C = P D M * Z θ JC (t)
2 . D u ty F ac to r, D = t 1 /t 2
0 .0 5
10
-2
10
PDM
0.02
0.01
t1
single pu lse
-5
10
-4
10
-3
10
-2
10
-1
t2
10
0
10
1
t 1 , S q u a re W a ve P u ls e D u ra tio n [se c ]
FQH90N10V2 Rev. A
4
www.fairchildsemi.com
FQH90N10V2 100V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FQH90N10V2 100V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQH90N10V2 Rev. A
5
www.fairchildsemi.com
FQH90N10V2 100V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQH90N10V2 Rev. A
6
www.fairchildsemi.com
FQH90N10V2 100V N-Channel MOSFET
Mechanical Dimensions
TO-247AD (FKS PKG CODE 001)
Dimensions in Millimeters
FQH90N10V2 Rev. A
7
www.fairchildsemi.com
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
Across the board. Around the world.™
The Power Franchise®
Programmable Active Droop™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UltraFET®
UniFET™
VCX™
Wire™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to affect
its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
8
FQH90N10V2 Rev. A
www.fairchildsemi.com
FQH90N10V2 100V N-Channel MOSFET
TRADEMARKS