TSOP17..
Photo Modules for PCM Remote Control Systems
Available types for different carrier frequencies
Type
TSOP1730
TSOP1736
TSOP1738
TSOP1756
f0
30 kHz
36 kHz
38 kHz
56 kHz
Type
TSOP1733
TSOP1737
TSOP1740
f0
33 kHz
36.7 kHz
40 kHz
Description
The TSOP17.. – series are miniaturized receivers for infrared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be decoded
by a microprocessor. The main benefit is the reliable
function even in disturbed ambient and the protection
against uncontrolled output pulses.
GND
VS
OUT
94 8691
Features
D
D
D
D
D Improved shielding against electric field
Photo detector and preamplifier in one package
disturbance
Output active low
D 5 Volt supply voltage, low power consumption
D TTL and CMOS compatibility
D Continuous transmission possible (tpi/T 0.4)
Internal filter for PCM frequency
x
High immunity against ambient light
Block Diagram
2
Control
Circuit
Input
100 kW
3
PIN
AGC
Band
Pass
VS
OUT
Demodulator
1
GND
94 8136
TELEFUNKEN Semiconductors
Rev. A2, 24-Sep-96
1 (6)
TSOP17..
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Test Conditions
Supply Voltage
Supply Current
Output Voltage
Output Current
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
Symbol
VS
IS
VO
IO
Tj
Tstg
Tamb
Ptot
Tsd
(Pin 2)
(Pin 2)
(Pin 3)
(Pin 3)
x
(Tamb 85 °C)
t 10 s, 1 mm from case
x
Value
–0.3...6.0
5
–0.3...6.0
5
100
–25...+85
–25...+85
50
260
Unit
V
mA
V
mA
°C
°C
°C
mW
°C
Typ
0.6
1.0
35
Max
0.8
Unit
mA
mA
m
250
mV
Basic Characteristics
Tamb = 25_C
Parameter
Supply
pp y Current ((Pin 2))
Transmission Distance
Output Voltage Low (Pin 3)
Irradiance (30 – 40 kHz)
Irradiance (56 kHz)
Irradiance
Directivity
Test Conditions
VS = 5 V, Ev = 0
VS = 5 V, Ev = 40 klx, sunlight
Ev = 0, test signal see fig.7,
IR diode TSIP5201, IF = 400 mA
IOSL = 0.5 mA,Ee = 0.7 mW/m2,
f = fo, tp/T = 0.4
Pulse width tolerance:
tpi – 5/fo < tpo < tpi + 6/fo,
test signal (see fig.7)
Pulse width tolerance:
tpi – 5/fo < tpo < tpi + 6/fo,
test signal (see fig.7)
Symbol
ISD
ISH
d
Min
0.4
VOSL
Angle of half transmission distance
Ee min
0.35
0.5
mW/m2
Ee min
0.4
0.6
mW/m2
Ee max
ϕ1/2
W/m2
deg
30
±45
Application Circuit
330 W *)
2
TSOP17..
TSUS 5...
TSIP 5...
3
4.7 mF *)
+5 V **)
>10 kW
optional
mC
1
96 12108
GND
*) only necessary to suppress power supply disturbances
**) tolerated supply voltage range : 4.5 V<VS <5.5V
2 (6)
TELEFUNKEN Semiconductors
Rev. A2, 24-Sep-96
TSOP17..
Typical Characteristics (Tamb = 25_C unless otherwise specified)
Ee min – Threshold Irradiance ( mW/m2 )
E e min / E e – Rel. Responsitivity ( % )
1.0
0.8
0.6
0.4
0.2
f = f0
"5%
Df ( 3 dB ) = f0 / 10
2.0
f ( E ) = f0
1.6
1.2
0.8
0.4
0.0
0.0
0.7
0.8
0.9
1.0
1.1
1.3
1.2
f / f0 – Relative Frequency
94 8143
Figure 1. Frequency Dependence of Responsivity
tpo – Output Pulse Length (ms)
0.9
0.8
Input burst duration
0.6
0.5
l = 950 nm,
optical test signal, fig.7
0.4
0.3
0.2
0.1
0
0.1
1.0
10.0
3.5
^
^
Correlation with ambient light sources
( Disturbance effect ) : 1 0W/m2 1.4 klx
( Stand.illum.A, T = 2855 K ) 8.2 klx
( Daylight, T = 5900 K )
3.0
2.5
2.0
Ambient, l = 950 nm
1.5
1.0
0.5
96 12111
0
0.01
0.10
f = f0
1 kHz
10 kHz
1
100 Hz
0.1
0.01
E e min – Threshold Irradiance (mW/m2 )
E e min – Threshold Irradiance (mW/m2 )
4.0
1.00
10.00
0.1
1
10
100
1000
DVs RMS – AC Voltage on DC Supply Voltage ( mV )
1.0
0.9
0.8
Figure 3. Sensitivity in Bright Ambient
Sensitivity in dark ambient
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
–30 –15
100.00
E – DC Irradiance (W/m2)
TELEFUNKEN Semiconductors
Rev. A2, 24-Sep-96
2.0
1.6
Figure 5. Sensitivity vs. Supply Voltage Disturbances
5.0
4.5
1.2
10
94 9106
Figure 2. Sensitivity in Dark Ambient
0.8
Figure 4. Sensitivity vs. Electric Field Disturbances
100.0 1000.0 10000.0
Ee – Irradiance ( mW/m2 )
96 12110
0.4
E – Field Strength of Disturbance ( kV / m )
Ee min – Threshold Irradiance ( mW/m2 )
1.0
0.7
0.0
94 8147
96 12112
0
15
30
45
60
75
90
Tamb – Ambient Temperature ( °C )
Figure 6. Sensitivity vs. Ambient Temperature
3 (6)
TSOP17..
Optical Test Signal
( IR diode TSIP 5201, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms )
t
tpi *
T
* tpi
w 10/fo is recommended for optimal function
Output Signal
VO
1)
2)
VOH
96 12109
"
7/f0 < td < 15/f0
tpo = tpi 6/f0
0.9
0.8
0.6
0.5
Toff
0.4
0.3
l = 950 nm,
optical test signal, fig.8
0.2
0.1
1.0
t
10.0
100.0 1000.0 10000.0
Ee – Irradiance (mW/m2)
96 12114
tpo2 )
Figure 7. Output Function
Ee
Ton
0.7
0
0.1
VOL
td1 )
1.0
T on ,Toff – Output Pulse Length (ms)
Ee
Figure 10. Output Pulse Diagram
Optical Test Signal
1.0
600 ms
t
600 ms
T = 60 ms
94 8134
VO
Output Signal, ( see Fig.10 )
I s – Supply Current ( mA )
0.9
0.7
0.6
0.5
0.4
0.3
0.2
0.1
VOH
0
–30 –15
VOL
Ton
t
Toff
Figure 8. Output Function
2.0
1.5
1.0
N=32
0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
tp/T – Duty Cycle
Figure 9. Sensitivity vs. Duty Cycle
4 (6)
S ( l ) rel – Relative Spectral Sensitivity
E e min – Threshold Irradiance (mW/m2 )
N=16
pulses per burst
2.5
0
15
30
45
60
75
90
Tamb – Ambient Temperature ( °C )
96 12115
Figure 11. Supply Current vs. Ambient Temperature
3.0
96 12113
Vs = 5 V
0.8
1.2
1.0
0.8
0.6
0.4
0.2
0
750
0.7
94 8408
850
950
1050
1150
l – Wavelength ( nm )
Figure 12. Relative Spectral Sensitivity vs. Wavelength
TELEFUNKEN Semiconductors
Rev. A2, 24-Sep-96
1.0
1.0
0.9
0.9
Relative Transmission distance
Relative Transmission distance
TSOP17..
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
–90–75–60–45–30–15 0 15 30 45 60 75 90
95 11339
Angle (deg)
Figure 13. Vertical Directivity ϕy
0
–90–75–60–45–30–15 0 15 30 45 60 75 90
Angle (deg)
95 11340
Figure 14. Horizontal Directivity ϕx
Dimensions in mm
96 12116
TELEFUNKEN Semiconductors
Rev. A2, 24-Sep-96
5 (6)
TSOP17..
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs).
The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
6 (6)
TELEFUNKEN Semiconductors
Rev. A2, 24-Sep-96