RF Microdevices & System Module Technology
for wireless communication
Star R Huang
CTO
Asia Pacific Microsystems, Inc.
Professor
Department of Electrical Engineering
National Tsing Hua University
March 31, 2006_1/50
confidential
Outline
• RF microdevices
– Potential MEMS devices in handheld products
– FBAR (Film Bulk Acoustic Resonator)
– IPD (Integrated Passive Device)
• SiP RF modules
• apm other products
March 31, 2006_2/50
confidential
More Modules than ever in Mobile Phones
Wherever LTCC is targeted IPD RF module could replace it !
(November 2005 Issue, Nikkei Electronics Asia)
March 31, 2006_3/50
confidential
Market Trend
Radio
Based on Key Users’ Information
eg. Samsung
WLAN b/g Module
10x10mm2
8x8mm2
IEEE Microwave Mag.
Dec. 2004, p.52
Market demands :
*Multiband & more functions to be built in one single module
*SOC based Si single chip and IPD chip in SiP format for WLAN and Bluetooth, etc
*Trend towards miniature single system modules based on IPD/SiP solutions
*Downsizing & Integration of PA Module and AS (Antenna Switch) Module = TX-FEM
In future :
*Trend towards a miniature fully integrated RF radio module for smart phones
based on precise passive elements of IPD
*4G smart phone will need advanced passive elements by using MEMS technology
March 31, 2006_4/50
confidential
Potential MEMS Applications for Mobile Phone
March 31, 2006_5/50
confidential
Wireless Microsystems
March 31, 2006_6/50
confidential
RF Transceiver Architecture
＜ Super-heterodyne architecture
1. Active device integration
2. Passive component integration
March 31, 2006_7/50
confidential
MEMS Components in RF Tranceiver Module
Zero IF removing
Antenna
RF Switch
FBAR
RF Resonator
Inductor/Capacitor
RF Module / RF Package
March 31, 2006_8/50
confidential
RF MEMS and Semiconductor Switches
Source:
IMS2000
2002Workshop
workshop
Source : Raytheon
Raytheon, IEEE
IEEE IMS
March 31, 2006_9/50
confidential
Structure and key technology of FBAR
piezoelectric materials
Key process:
1. Membrane process – KOH etching
2. Piezoelectric materials – AlN thin film development
March 31, 2006_10/50
confidential
Comparison of SAW and FBAR Technology
and applications
技術
應用
SAW
FBAR
原理
表面聲波
體聲波
共振頻率主要
決定因素
梳狀電極間距
導波薄膜厚度
關鍵製程
圖樣定義解析度
導波薄膜厚度控制
適用頻率
10MHz ~ 2.5GHz
2GHz ~ 20GHz
未來趨勢
高頻採用高聲速薄膜
採用微機電結構
射頻
手機、無線網路等
手機、無線網路等
中頻、低頻
通訊、消費性產品
不適用
1.＜2GHz射頻通訊產品
2.放棄中頻通訊產品
3.加強消費性產品線
＞2GHz射頻通訊產
品
產品策略
March 31, 2006_11/50
confidential
Aluminum Nitride Technology
• High quality AlN films showing
– Very smooth surface
– High c-axis orientation
– Dense column structure
A lN (0 0 2 )
I (cps)
Side view of AlN film (above)
and top view of AlN film (below)
P t (1 1 1 )
A lN (1 0 0 )
20
30
40
50
60
2 θ (d e g re e )
XRD pattern of AlN film
March 31, 2006_12/50
confidential
FBAR(Film Bulk Acoustic Resonator) Performance
S(2,2)
☼ Resonator Performance
Q=1234
freq (1.500GHz to 2.500GHz)
FBAR Resonators (OM Picture)
Resonator A
(With Loading Metal)
0.10
0.05
Top Elec.
AlN
Frequency variation (%)
Resonator B
FBAR@1.9G, Q=1200 (Resonator A)
-- without M4
-- with M4
0.00
-0.05
-0.10
-0.15
-0.20
Bottom Elec.
-0.25
0
10
20
30
40
50
60
70
80
90
Temp (deg C)
TCF= 20-28ppm/C @10C-80C
March 31, 2006_13/50
confidential
F
☼ Filter Performance (CP)
Ladder filter
Min. IL < 2.0dB
Ripple < 1.5dB
BW > 60MHz
Rejection > 25dB
Return Loss > 10dB
(PCS-Tx Filter)
March 31, 2006_14/50
confidential
FBAR Filter
Microcap-Protection Technique
Si Microcap
Bonding Pad
FBAR Filter
Over-Molded Packaging
Molded Shell
MC-FBAR
Au Wire
PCB Substrate
March 31, 2006_15/50
confidential
FBAR Duplexer
FD188A (1.9G FBAR Duplexer)
Ant.
L
Design and Structure
Tx
MC-FBAR
C
Inductors
Rx
+
Tx
Filter
0402 SMD
Rx
+
Capacitor
Over-molded package
March 31, 2006_16/50
confidential
Micromachining Technology for RF Applications
Wafer Level Interconnection / Packaging
March 31, 2006_17/50
confidential
RF MEMS Components with High Potential
March 31, 2006_18/50
confidential
Technology Trend
Frequency (GHz)
10
6
5
Trend:
1.
2.
UWB
LTCC
IPD / SiP
WiMax
Japanese Players :
4
3
2
1
WLAN
Bluetooth
2.5G 3G
PWB
Kyocera
TDK
Murata
Alps
Taiyo Yuden
Multi-functions / Multi-modes
New protocols based on high frequencies
(3~10GHz)
Players :
Philips (IDM/In house use)
Simens (IDM/In house use)
1.
SyChips (Design House)
APM (For full range customers)
High level integration
(RF; Digital; Memory; Graphic; etc.)
2. High Q passive elements of high precise values
3. High I/O counts
Taiwanese Players
50µm
25µm
10µm
1µm
Process Line Width
Numbers of Passive Elements / Unit Square
APM Technology Platform:
1. Design and process integration of MMIC, FBAR, IPD, and SiP
2. High Q process for LC
3. Cost and footprint advantage
March 31, 2006_19/50
confidential
RF Component/Module/Microsystem
Core Technology
The complete technology platform in wireless field
IPD, FBAR, &
Packaging
GPRS/WLAN/PHS
Integrated Antenna
Switch, PA Tx RF
Microsystems
Small size
Front-End RF
Microsystems
IPD/SiP
ODM
Apm’s RF
Microsystems
PA & Switch
Low Cost & Compact
RF Microsystems
Solution
March 31, 2006_20/50
Bluetooth / WLAN etc. in
Cellular IPD/SiP Single
module RF
Microsystems
RF MMIC
Design
SiP Solution
&
IPD Platform
Small size RF
Microsystems
RF SiP/MCM
Microsystems
Design
1. IPD : Integrated Passive Device
2. SIP : System in a Package
confidential
Special Materials Thin Film Processes
• Low TCR Metal Resistor film:
– Ta-Al and TaN TCR <150 ppm/C
• Cu plating for High Inductance Film:.
– 0.5nH~30nH and Q>20 @2.4GHZ/5nH.
• Ta2O5 as high capacitance Dielectric Film
– 5pF~1100 pF / 10V <100nA
• AlN Film for Film Bulk Acoustic Resonator :
– Q>400 @1.9GHZ
• Ni/Au plating for Gold Bumping
• Pt film with lift-off process
• Standard metals :
Al-Cu, Ti, TiN, Ag, Au, Ni, Cu,,..
March 31, 2006_21/50
confidential
Q factor of Inductor
40
m1
freq=50.00MHz
Lde=9.016
35
30
Lde
25
20
15
m1
10
ITEM
Range
(nH)
Toleranc
e
(%)
Induct
or
0.5nH
~
30 nH
± 5%
(typical)
5
Size
~ 0.5mm x
0.5m
m
0
0
2
4
6
8
10
freq, GHz
50
Qde
m2
freq=2.450GHz
Qde=37.418
m3
freq=5.150GHz
Qde=29.846
m4
freq=5.850GHz
Qde=23.518
m2
40
m3
m4
30
20
10
0
0
2
4
6
Q-factor
@
2.4
GHz
Q > 20
(typical)
Q>30
(Max.)
8
10
freq, GHz
March 31, 2006_22/50
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IPD Schematic Cross section
Bump
Active die
Inductor
Resistor
March 31, 2006_23/50
Capacitor
Si substrate
confidential
IPD Integrated Passive
Components & interconnects
Matching
network
Antenna
Load
capacitors
High frequency
bypass capacitors
Powers
BPF
Loop filter
Bluetooth chip
Reference
clock tuning
ADC decoupling
capacitors
Green shaded
components and
interconnects are
embedded in IPD chip
March 31, 2006_24/50
Interfaces
High density
inter-connection
Flash/EEPROM memory
R,C for reset
circuit and USB
interface
confidential
IPD Chip Design
IPD Design
High frequency
bypass capacitors
High density
inter-connection
USB interface and
pull high resistors
R: 7 pcs
C: 23 pcs
L: 6 pcs
Flash to IPD: 43 wire bonds
IPD to GETEK: 82 wire bonds
Pull high
resistors
Load capacitors
for crystal
Load capacitors
for crystal
ADC decoupling
capacitors
High density
inter-connection
RF Matching
network
Loop
filter
BPF
March 31, 2006_25/50
confidential
IPD in SiP RF Module Product ExampleBT Module
Microchip 24LC16B/SiW3000/IPD/Getek
Substrate
Microchip
EEPROM/
Flash
Standard chip
Bluetooth
SiW3000
Standard chip
Flash/EEPROM
SiW3000
IPD
Getek Substrate
March 31, 2006_26/50
IPD
Designed &
Manufactured
by apm
Getek Substrate
Designed by apm
confidential
RF System-in-a-package
Interconnection & Wafer Level Packaging Technologies
for fabricating RF SiP
Technologies for Enabling µSiP
a. Vertical Feedthrough
k. Optical Interconnection
i/j
b. V-groove Feedthrough
h/k
e/f/g/ h/j
k
b
g
Microstructures / MEMS
c/d
a
j. Passive/Active Heat Cooler
b
i/j
c. Electrical Interconnection
& Redistribution
i/j
MEMS elements Inside
Microsystem-in-a-Package (µSiP)
f. Wafer Level Lid Attach
d. Integrated
Passive Components
Metal Pad
Wire Bond
Metal Bumper
Solder Ball
i. Various Types
of PKG. Level I/Os
g. Wafer Level Encapsulation
i. Wafer Level Ball Mounting
e. Wafer Level Protection by Wafer
Bonding.
h. Flip Chip/MCM
March 31, 2006_27/50
confidential
The Evolution of SiP Technology
Evolution
SiP Type
I
II
III
Organic substrate
+ SMD
LTCC
IPD/SIP
Generation
first
second
third
Component
embedded
N/A
Available
W/o R
Available
Available
( Design rule ≧
50μm )
Good
If it integrate IPD,
will be an excellent
solution
Available
( Design rule ≧
25μm )
Available
(Design rule ≧ 1μm)
Excellent
3D structure
Excellent
2D structure
Poor
Moderate
Excellent
Process
Capability
Trace & I/O port
included
For small form
factor
For high freq.
stability
(Process Precision)
Conclusion
As Freq. ↑ and form factor ↓, then SiP/IPD is indispensable !
apm own technology
March 31, 2006_28/50
confidential
RF IPD SiP WLAN Module Products -1
apm6116 IPD & SiP
• 5.8×6.1×0.2 mm
•
–
–
–
–
digital
•
analog
Passives
Resistor: 11
Capacitor: 10
Inductor: 6
Balun+ BPF
Interconnection
Trace
Flip-chip pad
(for BB/MAC)
– Analog signal: 8
– Digital signal: ~70
(data, control,
address, clock)
– Power line: ~20
– GND/NC: ~30
Resistor
Capacitor
Pad (wirebond)
Inductor
RF
March 31, 2006_29/50
IPD
confidential
IPD SiP WLAN Module Products - 1
apm6116
Product
802.11b WLAN single system
module
Chip inside
Marvell 88W8305+88W8010
Package
60-pin LGA
Size
12×14×1.8mm
TX power: +11dBm/300mA
RX Sensitivity: -85dBm/ 120mA
Sleep mode 1mA
Performance
Host Interface
SDIO V1.0 & CF+ V2.0
Components
Designed by
apm
IPD (Balun, BPF, high density
interconnection, RC), Substrate,
SiP
SMT, Die bonding, Wire
bonding, Flip-chip
Fully pin-to-pin compatible to
FMD (Fujitsu) MBH7WL07
confidential
SiP Process
Other
March 31, 2006_30/50
SDIO on WinCE : TX: 2.07Mbps,
RX: 2.9Mbps
CF+ on WinCE: TX: 5.4Mbps,
RX: 5.8Mbps
What IPD Process Technology
Available at apm?
z Thinfilm (TaN, TaAl) Resistor Process
z Thinfilm (MIM; MIS) Capacitor Process: (SiO2; Si3N4;
Ta2O5)
z Thinfilm Low Resistance High Q Inductor Process (Cu)
z The Integrated Passive Devices Process on Si wafer
z The Integrated Passive Devices Process on Glass
z Zener diode for ESD/EMI protection circuits
z The Design and Simulation Capability of RF IPD
z Advanced System in Package (SIP) Technology
March 31, 2006_31/50
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Concluding Remarks about RF Products
•RF modules with IPD is the emerging 3rd generation
products which offer small size, low power, high
performance, and easy to use; these benefits translate
into end product short design/development time and
low cost manufacturing/testing
•FBAR filter/duplexer has large market, replacing bulky SAW
devices, potentially it can be integrated into RF modules
•apm has more than three years of development experience in
the above products; several RF IPD modules are in
mass production and more are to come, FBAR is in the
final phase of development.
•apm is the only company in Taiwan possesses this kind of
world class core competence which targeted not only
for the current but also for the future product needs
March 31, 2006_32/50
confidential
Foundry Service/ Inkjet Head
300dpi 20k, 600dpi 24k, 1200dpi 5k wafers shipped
Customer “A”
APM with Marvell, Mar. 14th, 2006_33/90
CONFIDENTIAL
Micromachined Monolithic Inkjet Chip
175 K COTs shipped
APM with Marvell, Mar. 14th, 2006_34/90
CONFIDENTIAL
Pressure Sensor Utilizing Si Bulk
Micromachining & Anodic Bonding
APM with Marvell, Mar. 14th, 2006_35/90
CONFIDENTIAL
Pressure Sensor Products
8.5 million sensors shipped
APM with Marvell, Mar. 14th, 2006_36/90
CONFIDENTIAL
Microrelay Using Thermal Actuators
APM with Marvell, Mar. 14th, 2006_37/90
CONFIDENTIAL
Micromachined Si Submount for LED
Emission Enhancement & Heat Sink
Reflective
Metal Coating
Au Stud Bumps
Dicing Line
APM with Marvell, Mar. 14th, 2006_38/90
Light
LED Chips
MEMS Micro-fin Structures
For Heat Dissipation
CONFIDENTIAL
Fiber Array Alignment & Assembly Microstructure
CELL B
CELL A
APM with Marvell, Mar. 14th, 2006_39/90
CONFIDENTIAL
Micromachined AFM Tips
APM with Marvell, Mar. 14th, 2006_40/90
CONFIDENTIAL
Thank you
We Provide Microtechnologies to
Enhance Customers’ Competitiveness
March 31, 2006_41/50
confidential