FGA50N100BNTD
1000 V NPT Trench IGBT
General Description
Features
Using Fairchild's proprietary trench design and advanced
NPT technology, the 1000V NPT IGBT offers superior
conduction and switching performances, high avalanche
ruggedness and easy parallel operation. This device offers
the optimum performance for hard switching application
such as UPS, welder applications.
•
•
•
•
High Speed Switching
Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60 A
High Input Impedance
Built-in Fast Recovery Diode
Application
UPS, Welder, Induction Heating, Microwave Oven
C
G
TO-3P
G C E
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
E
TC = 25C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ TC = 25C
@ TC = 100C
@ TC = 25C
@ TC = 100C
@ TC = 25C
@ TC = 100C
Ratings
1000
 25
50
35
100
30
15
156
63
-55 to +150
-55 to +150
Unit
V
V
A
A
A
A
A
W
W
C
C
300
C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(DIODE)
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2006 Fairchild Semiconductor Corporation
FGA50N100BNTD Rev. C1
1
Typ.
----
Max.
0.8
2.4
25
Unit
C/W
C/W
C/W
www.fairchildsemi.com
FGA50N100BNTD — 1000 V NPT Trench IGBT
November 2013
Part Number
Top Mark
Package
FGA50N100BNTDTU
FGA50N100BNTD
TO-3P
Electrical Characteristics of IGBT
Symbol
Packing
Method Reel Size Tape Width
Rail / Tube
N/A
Quantity
N/A
30
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
1000
--
--
V
VGE = ± 25 V, VCE = 0 V
---
---
1.0
± 500
mA
nA
IC = 60 mA, VCE = VGE
IC = 10 A, VGE = 15 V
IC = 60 A, VGE = 15 V
4.0
---
5.0
1.5
2.5
7.0
1.8
2.9
V
V
V
----
6000
260
200
----
pF
pF
pF
--------
140
320
630
130
275
45
95
---250
350
---
ns
ns
ns
ns
nC
nC
nC
Typ.
1.2
1.8
1.2
0.05
Max.
1.7
2.1
1.5
2
Unit
V
V
us
uA
Off Characteristics
BVCES
ICES
IGES
Collector Emitter Breakdown Voltage
VGE = 0 V, IC = 1 mA
Collector Cut-Off Current
G-E Leakage Current
VCE = 1000 V, VGE = 0 V
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE=10 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCC = 600 V, IC = 60 A,
RG = 51 , VGE=15 V,
Resistive Load, TC = 25C
VCE = 600 V, IC = 60 A,
VGE = 15 V , , TC = 25C
Electrical Characteristics of DIODE T
C
Symbol
Parameter
VFM
Diode Forward Voltage
trr
IR
Diode Reverse Recovery Time
Instantaneous Reverse Current
©2006 Fairchild Semiconductor Corporation
FGA50N100BNTD Rev. C2
= 25C unless otherwise noted
Test Conditions
IF = 15 A
IF = 60 A
IF = 60 A diF/dt = 20 A/us
VRRM = 1000 V
2
Min.
----
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FGA50N100BNTD — 1000 V NPT Trench IGBT
Package Marking and Ordering Information
80
8V
Common Emitter
VGE = 15V
80
o
Collector Current, I C [A]
Collector Current, I C [A]
90
20V
15V
10V
9V
Common Emitter
o
TC = 25 C
60
40
7V
20
Tc = 25 C
o
Tc = 125 C
70
60
50
40
30
20
10
VGE = 6V
0
0
0
1
2
3
4
5
0
Collector-Emitter Voltage, VCE [V]
1
2
3
4
Collector-Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
Common Emitter
O
TC= - 40 C
3
Collector-Emitter Voltage, VCE[V]
Collector-Emitter Voltage, VCE [V]
10
Common Emitter
VGE=15V
80A
60A
2
30A
IC=10A
1
8
6
30A
4
60A
80A
2
IC=10A
0
-50
0
50
100
150
4
o
Case Temperature, TC [ C]
Fig 3. Saturation Voltage vs. Case
Temperature at Varient Current Level
16
10
Common Emitter
o
TC = 25 C
8
6
30A
60A
4
12
20
Fig 4. Saturation Voltage vs. VGE
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
10
8
Gate-Emitter Voltage, VGE [V]
80A
2
IC = 10A
0
Common Emitter
o
TC = 125 C
8
30A
6
60A
80A
4
2
IC = 10A
0
4
8
12
16
20
4
Fig 5. Saturation Voltage vs. VGE
©2006 Fairchild Semiconductor Corporation
FGA50N100BNTD Rev. C1
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
Fig 6. Saturation Voltage vs. VGE
3
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FGA50N100BNTD — 1000 V NPT Trench IGBT
100
FGA50N100BNTD — 1000 V NPT Trench IGBT
10000
10000
Cies
V CC =600V, IC =60A
V GE = +/-15V
Switching Time [ns]
Capacitance [pF]
o
T C =25 C
1000
Coes
100
Cres
Common Emitter
VGE = 0V, f = 1MHz
Tdoff
1000
Tr
T don
Tf
100
o
TC = 25 C
0
5
10
15
20
25
10
30
0
50
100
Collector-Emitter Voltage, VCE [V]
150
200
Gate Resistance, R G [ ]
Fig 7. Capacitance Characteristics
Fig 8. Switching Characteristics vs.
Gate Resistance
20
Common Emitter
VCC=600V, RL=10 
1000
V CC= 6 0 0 V , R g = 5 1 
o
TC=25 C
o
Gate-Emitter Voltage,VGE [V]
Switching Time [ns]
V G E = + /-1 5 V , T C = 2 5 C
T d o ff
Tf
Tr
100
T don
15
10
5
0
10
20
30
40
50
0
60
50
100
150
200
250
300
Gate Charge, Qg [nC]
C o lle cto r C urre nt, IC [A ]
Fig 9. Switching Characteristics vs.
Collector Current
Fig 10. Gate Charge Characteristics
1
100
0.5
Ic MAX (Pulsed)
Ic MAX (Continuous)
0.2
Thermal Response [Zthjc]
Collector Current, Ic [A]
50  s
100  s
10
1ms
DC Operation
1
Single Nonrepetitive
o
Pulse Tc = 25 C
Curves must be derated
linearly with increase
in temperature
0.1
0.01
0.1
1
0.1
0.1
0.05
0.02
singlepulse
0.01
0.01
1E-3
1E-5
10
100
1000
1E-4
1E-3
0.01
0.1
1
10
Rectangular PulseDuration[sec]
Collector - Emitter Voltage, V CE [V]
Fig 11. SOA Characteristics
©2006 Fairchild Semiconductor Corporation
FGA50N100BNTD Rev. C1
Fig 12. Transient Thermal Impedance of IGBT
4
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120
IF= 60 A
o
Forward Current, IF[A]
T C = 100 C
10
o
T C = 25 C
1
0.1
0.0
0.5
1.0
1.5
2.0
TC= 25 C
1.0
0.8
80
trr
0.6
60
0.4
40
0.2
0
40
Forward Voltage, V F [V]
10
8
Irr
0.6
6
0.4
4
100
Reverse Current, IR [uA]
Reverse Recovery Time, trr [us]
160
200
0
240
1000
Reverse Recovery Current Irr [A]
12
trr
0.8
120
Fig 14. Reverse Recovery Characteristics
vs. diF/dt
di/dt=-20A/us
o
TC=25 C
1.0
80
di/dt [A/us]
Fig 13. Forward Characteristics
1.2
20
Irr
0.0
2.5
100
Reverse Recovery Current Irr [A]
Reverse Recovery Time, trr [us]
o
o
T C = 150 C
10
1
0.1
o
T C= 25 C
0.01
1E-3
10
20
30
40
50
60
0
Forward Current, IF [A]
300
600
900
Reverse Voltage, V R [V]
Fig 15. Reverse Recovery Characteristics vs.
Forward Current
250
Fig 16. Reverse Current vs. Reverse Voltage
o
TC = 25 C
Capacitance, Cj [pF]
200
150
100
50
0
0.1
1
10
100
Reverse Voltage, VR [V]
Fig 17. Junction capacitance
©2006 Fairchild Semiconductor Corporation
FGA50N100BNTD Rev. C1
5
www.fairchildsemi.com
FGA50N100BNTD — 1000 V NPT Trench IGBT
1.2
100
FGA50N100BNTD — 1000 V NPT Trench IGBT
Mechanical Dimensions
Figure 18. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65
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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003
©2006 Fairchild Semiconductor Corporation
FGA50N100BNTD Rev. C1
6
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2006 Fairchild Semiconductor Corporation
FGA50N100BNTD Rev. C1
7
www.fairchildsemi.com
FGA50N100BNTD — 1000 V NPT Trench IGBT
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