SiC Power Module
Datasheet
BSM120D12P2C005
Application
Circuit diagram
 Motor drive
1
 Inverter, Converter
 Photovoltaics, wind power generation.
10
9
8(N.C)
 Induction heating equipment.
3,4
5
6
7(N.C)
Features
2
1) Low surge, low switching loss.
*Do not connnect to NC pin.
2) High-speed switching possible.
3) Reduced temperature dependence.
Construction
This product is a half bridge module consisting of SiC-DMOS and SiC SBD from ROHM.
Dimensions & Pin layout (Unit : mm)
10
9
8
7
6
5
4
1
2
3
(M2.6 FOR SELF-TAPPING
SCREW)
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1/8
2013.05 - Rev.B
Data Sheet
BSM120D12P2C005
Absolute maximum ratings (Tj = 25°C)
Parameter
Conditions
Symbol
VDSS G-S short
Drain-source voltage
Gate-source voltage()
Gate-source voltage()
Drain current *
VGSS
ID
1
Source current *
IDRM
IS
ISRM
1
Total power disspation *3
Junction temperature
Storage temperature
Ptot
Tj
Tstg
Isolation voltage*4
Visol

Mounting torque
Limit
1200
22
40 to150
40 to125
Unit
V
V
V
A
A
A
A
W
°C
°C
2500
Vrms
4.5
3.5
N·m
N·m
D-S short
6
120
240
120
240
780
DC(Tc=60°C)
Pulse (Tc=60°C) 1ms　*2
Tc=60°C
Pulse (Tc=60°C) 1ms *2
Tc=25°C
Terminals to baseplate,
f=60Hz AC 1min.
Main Terminals : M6 screw
Mounting to heat shink : M5 screw
(*1) Measurement of Tc is to be done at the point just under the chip.
(*2) Repetition rate should be kept within the range where temperature rise of die should not exceed Tj max.
(*3) Tj is less than 150°C (*4) Actual measurement is 3000V/1sec . in accordance with UL1557.
Electrical characteristics (Tj=25°C)
Parameter
Symbol
Static drain-source on-state
voltage
Conditions
VDS(on) ID=120A, VGS=18V
Drain cutoff current
IDSS
VDS=1200V, VGS=0V
Source-drain voltage
VSD
VGS=0V, IS=120A
Min.
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Gate-source threshold voltage VGS(th) VDS=10V, ID=22mA
IGSS
Gate-source leakage current
td(on)
tr
trr
td(off)
tr
Ciss
Switching characteristics
Input capacitance
VGS=22V, VDS=0V
VGS= 6V, VDS=0V
VGS(on)=18V, VGS(off)=0V
VDS=600V
ID=120A
RG=3.9
inductive load
VDS=10V, VGS=0V, f=1MHz
Junction-to-case thermal
resistance
Rth(j-c)
DMOS (1/2 module) *5
SBD (1/2 module) *5
Case-to-heat sink
Thermal resistance
Rth(c-f)
Case to heat sink, per 1 module,
Thermal grease appied *6


Typ.
2.4
3.5
Max.
3.2
4.6
Unit
V
V


2
mA


1.7
2.2
2.1
2.7
V
V
1.6
2.7
4.0
V

0.5










45
50
30
170
60
14
0.5









0.16
0.21
A
A
ns
ns
ns
ns
ns
nF
°C/W
°C/W

0.04

°C/W
(*5) Measurement of Tc is to be done at the point just beneath the chip.
(*6) Typical value is measured by using thermally conductive grease of =0.9W / (m · K).
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2/8
2013.05 - Rev.B
Data Sheet
BSM120D12P2C005
Waveform for switching test
Eoff = ID × VDS
Eon = ID × VDS
trr
Vsurge
VDS
90%
90%
10%
2%
ID
10%
2%
2%
10%
2%
90%
VGS
10%
td (on)
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tr
td (off)
3/8
tf
2013.05 - Rev.B
Data Sheet
BSM120D12P2C005
Electrical characteristic curves (Typical)
Fig.2 Drain-Source Voltage vs. Drain Current
Fig.1 Typical Output Characteristics
10
240
VGS =16V
VGS =18V
Drain Current : ID [A]
180
VGS =18V
9
Drain-Source Voltage : VDS [V]
Tj=25ºC
VGS =20V
VGS =14V
120
VGS =12V
60
VGS =10V
0
8
Tj=125ºC
7
6
5
Tj=25ºC
4
3
2
1
0
0
2
4
6
8
0
100
Drain-Source Voltage : VDS [V]
300
Drain Current : ID [A]
Fig.3 Drain-Source Voltage vs.
Gate-Source Voltage
Fig.4 Forward characteristic of Diode-inverter
1000
10
8
7
6
5
4
ID=120A
3
ID=80A
2
ID=60A
1
ID=20A
Diode Forward Current : Is [A]
Tj=25ºC
9
Drain-Source Voltage : VDS [V]
200
Tj=25ºC
100
Tj=125ºC
10
Tj=125ºC
Tj=25ºC
VGS =0V
VGS =18V
1
0
10
15
20
0
25
Gate-Source Voltage : VGS [V]
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1
2
3
4
Source-Drain Voltage : VSD [V]
4/8
2013.05 - Rev.B
Data Sheet
BSM120D12P2C005
Electrical characteristic curves (Typical)
Fig.5 Drain Current vs. Gate-Source Voltage
Fig.6 Drain Current vs. Gate-Source Voltage
0.10
1.E+00
VDS =10V
VDS =10V
0.09
1.E-01
1.E-02
Drain Current : ID [A]
Drain Current : ID [A]
0.08
Tj=125ºC
1.E-03
1.E-04
Tj=25ºC
1.E-05
1.E-06
0.07
0.06
0.05
0.04
Tj=125ºC
0.03
Tj=25ºC
0.02
0.01
1.E-07
0.00
0.0
1.0
2.0
3.0
4.0
0.0
Gate-Source Voltage : VGS [V]
2.0
3.0
4.0
Gate-Source Voltage : VGS [V]
Fig.8 Switching Characteristics [ Tj=125ºC ]
Fig.7 Switching Characteristics [ Tj=25ºC ]
1,000
1,000
td(off)
Switching Time : t [ns]
tr
td(off)
Switching Time : t [ns]
1.0
tf
100
td(on)
10
VDS =600V
VGS(on) =18V
VGS(off) =0V
RG =3.9
Inductive Load
1
tr
tf
100
td(on)
10
VDS =600V
VGS(on) =18V
VGS(off) =0V
RG =3.9
Inductive Load
1
0
100
200
300
0
Drain Current : ID [A]
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100
200
300
Drain Current : ID [A]
5/8
2013.05 - Rev.B
Data Sheet
BSM120D12P2C005
Electrical characteristic curves (Typical)
Fig.9 Switching Loss vs. Drain current
[ Tj=25ºC ]
Fig.10 Switching Loss vs. Drain current
[ Tj=125ºC ]
10
10
VDS =600V
VGS(on) =18V
VGS(off) =0V
RG =3.9
Inductive Load
8
Eon
6
Eoff
4
2
Eon
6
4
Eoff
2
Err
Err
0
0
0
50
100
150
200
250
0
300
Drain Current : ID [A]
100
10
VDS =600V
VGS(on) =18V
VGS(off) =0V
RG =3.9
Inductive Load
1
0
100
200
Irr
10
10
VDS =600V
VGS(on) =18V
VGS(off) =0V
RG =3.9
Inductive Load
1
300
1
0
Drain Current : ID [A]
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100
trr
Reverse Recovery Time : trr [ns]
Irr
Reverse Recovery Current : Irr [A]
Reverse Recovery Time : trr [ns]
trr
1
300
Fig.12 Reverse Recovery Characteristics vs.
Drain Current [ Tj=125ºC ]
100
10
200
Drain Current : ID [A]
Fig.11 Reverse Recovery Characteristics vs.
Drain Current [ Tj=25ºC ]
100
100
Reverse Recovery Current : Irr [A]
Switching Loss [mJ]
8
Switching Loss [mJ]
VDS =600V
VGS(on) =18V
VGS(off) =0V
RG =3.9
Inductive Load
100
200
300
Drain Current : ID [A]
6/8
2013.05 - Rev.B
Data Sheet
BSM120D12P2C005
Electrical characteristic curves (Typical)
Fig.13 Switching Characteristics vs. Gate
Resistance [ Tj=25ºC ]
Fig.14 Switching Characteristics vs. Gate
Resistance [ Tj=125ºC ]
10,000
VDS =600V
ID =120A
VGS(on) =18V
VGS(off) =0V
Inductive Load
1,000
100
VDS =600V
ID =120A
VGS(on) =18V
VGS(off) =0V
Inductive Load
td(off)
Switching Time : t [ns]
Switching Time : t [ns]
10,000
tf
td(on)
1,000
td(off)
tf
tr
100
td(on)
tr
10
10
1
10
1
100
100
Gate Resistance : RG []
Gate Resistance : RG []
Fig.15 Switching Loss vs. Gate Resistance
[ Tj=25ºC ]
Fig.16 Switching Loss vs. Gate Resistance
[ Tj=125ºC ]
10
10
VDS =600V
ID =120A
VGS(on) =18V
VGS(off) =0V
Inductive Load
VDS =600V
ID =120A
VGS(on) =18V
VGS(off) =0V
Inductive Load
8
6
Switching Loss [mJ]
8
Switching Loss [mJ]
10
Eoff
Eon
4
2
6
Eon
Eoff
4
2
Err
Err
0
0
1
10
1
100
Gate Resistance : RG []
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10
100
Gate Resistance : RG []
7/8
2013.05 - Rev.B
Data Sheet
BSM120D12P2C005
Electrical characteristic curves (Typical)
Fig.17 Typical Capacitance vs. Drain-Source
Voltage
Fig.18 Gate Charge Characteristics
[ Tj=25ºC ]
25
100
Gate-Source Voltage : VGS [V]
Ciss
Capasitance : C [nF]
10
Coss
1
0.1
Tj=25ºC
f = 1MHz
VGS =0V
Crss
ID =120A
VDD =600V
Pulsed
20
15
10
5
0
0.01
0.01
1
0
100
Drain-Source Voltage : VDS [V]
400
600
800
Total Gate charge : Qg [nC]
Fig.19 Normalized Transient Thermal
Impedance vs. Pulse Width
Fig.20 Static Drain - Source On-State Resistance
vs. Junction Temperature
10
0.10
Single Pulse
Tc=25ºC
1
Per unit base
DMOS part : Rth(j-c)=0.16ºC/W
SBD part : Rth(j-c)=0.21ºC/W
0.1
0.001
0.01
0.1
1
10
Static Drain - Source On-State Resistance
: RDS(on) []
Normalized Transient Thermal Impedance : Rth
200
Pulse Width : Pw [s]
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ID=120A
Pulsed
0.08
VGS =12V
0.06
VGS =14V
VGS =16V
0.04
0.02
VGS =20V
VGS =18V
0.00
25
50
75
100
125
150
175
Junction Temperature : Tj [ºC]
8/8
2013.05 - Rev.B
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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R1102B