High Speed GaAlAs Infrared Emitter
OPE5685
DIMENSIONS (Unit : mm)
5.7
5.0
7.7
8.7
The OPE5685 is GaAlAs infrared emitting diode
that is designed for high power, low forward voltage
and high speed rise / fall time.
This device is optimized for speed and efficiency
at emission wavelength 850nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 plastic package
and has wide beam angle with lensed package
and cup frame. Especially this device is suited
as the emitter of data transmission without cable.
24.0 Min
1.3 Max
FEATURES
• High speed : 25ns rise time
• 850nm wavelength
• Wide beam angle
• Low forward voltage
• High power and high reliability
• Available for pulse operating
2-0.5
2.0
APPLICATIONS
• Emitter of IrDA
• IR Audio and Telephone
• High speed IR communication
• IR LANs
• Available for wireless digital data transmission
2.5
Anode
Cathode
Tolerance : ±0.2mm
STORAGE
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions
and environments for this device.
MAXIMUM RATINGS
Item
Symbol
Rating
Power Dissipation
PD
150
Forward current
IF
100
Pulse forward current
IFP
1.0
*1
Reverse voltage
VR
4.0
Operating temp.
Topr.
-25~ +85
*2
Soldering temp.
Tsol.
260.
*1
.Duty ratio = 1/100, pulse width=0.1ms.
*2
.Lead Soldering Temperature (2mm from case for 5sec.).
ELECTRO-OPTICAL CHARACTERISTICS
Item
Symbol
(Ta=25°C)
Unit
MW
MA
A
V
°C
°C
Conditions
Forward voltage
VF
IF=50mA
Reverse current
Capacitance
Radiant intensity
IR
Ct
Ie
VR=4V
f=1MHz
IF=50mA
Peak emission wavelength
λp
Spectral bandwidth 50%
Min.
Typ.
2.0
V
10
20
50
µA
pF
mW/sr
IF=50mA
850
nm
∆λ
IF=50mA
45
nm
Half angle
∆θ
IF=50mA
±22
deg.
Optical rise & fall time(10%~90%)
tr/tf
IF=50mA
IF=50mA DC
+10mA p-p
25/13
ns
14
MHz
Cut off frequency
*3
fc
*3
. 10logPo(fc MHz)/Po(0.1 MHz)=-3
7
1.5
(Ta=25°C)
Max.
Unit
OPE5685
High Speed GaAlAs Infrared Emitter
FORWARD CURRENT Vs.
AMBIENT TEMP.
Ta=25°C
Ta=25
200
100
50
30
100
80
10
5
3
60
40
1
0.5
0.3
0.1
20
0
-20
RADIANT INTENSITY Vs.
FORWARD CURRENT.
0
20
40
60
80
Ambient Temperature Ta(°C)
1
100
RELATIVE RADIANT INTENSITY Vs.
AMBIENT TEMP.
3 5 10
30 50 100 200 500
Forward Current IF(mA)
RELATIVE RADIANT INTENSITY Vs.
EMISSION WAVELENGTH.
1.0
IF=50mA
Ta=25°C
0.8
3
2
0.6
1
0.8
0.5
0.3
0.2
0.1
0.4
0.2
-20
100
0
20
40
60
80
Ambient Temperature Ta(°C)
0.0
700
100
FORWARD CURRENT Vs.
FORWARD VOLTAGE
50
ANGULAR DISPLACEMENT Vs
RELATIVE RADIANT INTENSITY
Ta=25°C
Ta=25°C
30
20
-30°
-20°
-10°
0°
10°
20°
30°
40°
-40°
-50°
10
5
4
3
2
1
1.0
750 800 850 900 950
Emission Wavelength λ(nm)
50°
-60°
1.1
1.2
1.3
1.4
Forward Voltage VF(V)
1.5
1.6
8
60°
-70°
70°
-80°
-90°
1.0
80°
90°
1.0
0.5
0
0.5
Relative Radiant intensity