PIN Photodiodes
PNZ334 (PN334)
Silicon planar type
φ4.4±0.2
4.0±0.2
0.5
• Plastic type package (φ5)
• High coupling capabillity suitable for plastic fiber
• High quantum efficiency
• High-speed response
1.0
5.0±0.2
■ Features
3.0±0.3
C0.2
0.8
Not soldered 2.0 max.
Unit: mm
φ4.8±0.2
For optical control systems
2-0.8 max.
1.5
26.0±0.1
1.5
0.6
2-0.6±0.1
Rating
2.54
Unit
Reverse voltage
VR
30
V
Power dissipation
PD
100
mW
Operating ambient temperature
Topr
−25 to +85
°C
Storage temperature
Tstg
−30 to +100
°C
0.5±0.1
Symbol
φ5.4±0.2
Parameter
Ta = 25°C
(1.5)
■ Absolute Maximum Ratings
2
1
2.4
1: Anode
2: Cathode
LT5FL102-001 Package
■ Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Dark current
Photocurrent
*1
Peak emission wavelength
Rise time
Conditions
ID
VR = 10 V
IL
VR = 10 V, L = 1 000 lx
λp
VR = 10 V
tr
VR = 10 V, RL = 50 Ω
*2
Fall time *2
tf
Terminal capacitance
Ct
Half-power angle
θ
Min
5
Typ
Max
Unit
0.1
10.0
nA
7
µA
850
nm
2
ns
2
ns
VR = 0 V, f = 1 MHz
6
pF
The angle from which photocurrent
becomes 50%
70
°
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be disregarded radiation.
4. *1: Source: Tungsten (color temperature 2 856 K)
*2: Switching time measurement circuit
Sig. in
VR
(Input pulse)
λP = 900 nm
50 Ω
90%
10%
Sig. out
RL
(Output pulse)
tr
tr: Rise time
tf: Fall time
tf
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHE00042BED
1
PNZ334
IL  L
IL  V R
12
Photocurrent IL (µA)
Photocurrent IL (µA)
102
10
1
L = 1 000 lx
8
L = 500 lx
4
10−1
10−2
1
102
10
103
0
104
0
10
Illuminance L (lx)
20
40
10
1
10−1
10−1
50
Spectral sensitivity characteristics
100
VR = 10 V
10
8
1
10−1
10−2
4
0
40
10−3
−40
80
VR = 10 V
Ta = 25°C
80
Relative sensitivity ∆S (%)
Dark current ID (nA)
12
Ambient temperature Ta (°C)
0
40
60
40
20
0
200
80
Directivity characteristics
400
600
1 000
800
Coupling loss characteristics
Coupling loss characteristics
0
0
X, Y = 0 mm
Z = 0 mm
1
2
3
4
10−1 −2
10
10−1
1
Load resistance RL (kΩ)
2
1
Coupling loss LX , LY (dB)
Coupling loss LZ (dB)
Rise time tr , Fall time tf (ns)
1
102
10
10
5
1 200
Wavelength λ (nm)
Ambient temperature Ta (°C)
103
102
10
1
Reverse voltage VR (V)
ID  T a
102
VR = 10 V
L = 1 000 lx
16
Photocurrent IL (µA)
30
102
Reverse voltage VR (V)
IL  T a
20
0
−40
Ta = 25°C
Ta = 25°C
Terminal capacitance Ct (pF)
103
Ct  VR
103
16
VR = 10 V
Ta = 25°C
Fiber
Y
Z
φ1 mm
X
0
0.4
0.8
1.2
Distance Z (mm)
SHE00042BED
1.6
Z = 0.3 mm
2
3
4
5
− 0.8
Fiber
Y
X
− 0.4
0
Z
φ1 mm
0.4
Distance X, Y (mm)
0.8
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
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applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
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Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
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• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
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2003 SEP