NJL6401R-3 COBP High Speed Photo Diode GENERAL DESCRIPTION The NJL6401R-3 is a high-speed PIN photodiode capable of detecting in a wide wavelength range of up to infrared light from the blue-violet light. The features are low wavelength dependence and fast fall-time. An ultra-small and thin package of COBP is adopted, and providing high efficient space-saving. . FEATURES • Corresponding to three wavelength (=405nm/650nm/780nm) • Short rise-time, fall-time 2ns typ. (=405nm/650nm/780nm, VR=2.5V, 10-90%) • High speed 250MHz ( =780nm) 300MHz ( =650nm) 350MHz ( =405nm) • Miniature, thin package • Active area 1.2mmX1.7mmX0.8mm 0.7mmX0.7mm APPLICATIONS • Laser monitor for Blu-ray, etc. • Monitor for RGB wavelength • Photoelectric switch, Space light transmitting, etc. ABSOLUTE MAXIMUM RATINGS (Ta=25C) PARAMETER Reverse Voltage Operating Temperature Storage Temperature Reflow Soldering Temperature SYMBOL VR Topr Tstg Tsol RATINGS 35 -30 to +85 -40 to +100 255 UNIT V C C C ELECTRO-OPTICAL CHARACTERISTICS (Ta=25C) PARAMETER Dark Current Forward Voltage Capacitance Peak Wavelength Sensitivity SYMBOL ID VF Ct P S Rise time, Fall time tr/tf Cut off Frequency fc TEST CONDITION VR=10V IF=1mA VR=2.5V, f=1MHz — VR=2.5V, =780nm VR=2.5V, =650nm VR=2.5V, =405nm VR=2.5V, =780nm, 10-90%, 1mW VR=2.5V, =650nm, 10-90%, 1mW VR=2.5V, =405nm, 10-90%, 1mW VR=2.5V, =780nm, RL=50-3dB VR=2.5V, =650nm, RL=50-3dB VR=2.5V, =405nm, RL=50-3dB MIN — — — — 0.37 0.34 0.22 — — — — — — TYP 0.1 — 4 800 0.47 0.42 0.28 2 2 2 250 300 350 MAX 2.0 1.0 — — — — — — — — — — — UNIT nA V pF nm A/W A/W A/W ns ns ns MHz MHz MHz 20.June.2014 Rev.2.2 -1- NJL6401R-3 Unit : mm Anode 1 2 0.8±0.15 0.45 1 0.08 0.35 1.2 0.12 0.4 (0.28) 0.45 Resist 0.12 (0.2) 0.08 Active area: 0.7x0.7mm 1.7 OUTLINE Cathode GENERAL TOLERANCE : ± 0.1mm 0.54 0.56 1.16 0.56 1: anode 2: cathode PCB Pattern 20.June.2014 Rev.2.2 -2- NJL6401R-3 TYPICAL CHARACTERISTICS Relative Sensitivity vs. Illuminance (Ta=25C) Spectral Response (Ta=25C) 1.00E-03 100% VR=2.5V 90% 1.00E-04 80% λ=650nm,780nm Relative Sensitivity(%) Light Current IL(A) 70% λ=405nm 1.00E-05 1.00E-06 60% 50% 40% 30% 20% 1.00E-07 10% 1.00E-08 0.01 0.1 1 10 0% 300 100 400 500 600 700 800 900 1000 Wavelength(nm) Illuminance (mW/cm2) Dark Current vs. Temperature Relative Sensitivity vs. Temperature 1.00E-08 105% VR=2.5V VR=2.5V 104% 1.00E-09 Relative Sensitivity(%) Dark Current ID(A) 1.00E-10 1.00E-11 1.00E-12 103% λ=780nm 102% λ=405nm 101% λ=650nm 100% 99% 98% 97% 1.00E-13 96% 1.00E-14 -40 95% -20 0 20 40 60 80 100 -40 -20 0 Ambient Temperature Ta(ºC) 20 40 80 100 Rise Time vs. Reverse Voltage (Ta=25C) Fall Time vs. Reverse Voltage (Ta=25C) 5.0 5.0 RL=50Ω RL=50Ω 4.0 4.0 λ=780nm λ=780nm 3.0 Fall Time(ns) Rise Time(ns) 60 Ambient Temperature Ta(ºC) λ=405nm,650nm 2.0 1.0 3.0 λ=405nm,650nm 2.0 1.0 0.0 0.0 0 1 2 3 VR(V) 20.June.2014 Rev.2.2 4 5 0 1 2 3 4 5 VR(V) -3- NJL6401R-3 Relative Sensitivity vs. Frequency (Ta=25C) Capacitance vs. Reverse Voltage (Ta=25C) 10 0 9 VR=2.5V,RL=50Ω -1 8 Capacitance Cj(pF) Relative Sensitivity (dB) 7 λ=780nm -2 λ=650nm -3 λ=405nm 6 5 4 3 -4 2 -5 1 0 -6 1 10 100 0 1000 1 2 3 4 5 Reverse Voltage VR(V) Frequency (MHz) MEASURING CIRCUIT FOR RESPONSE TIME Oscilloscope Pulse Generator Input 90% 50 Laser NJL6401R-3 Output 10% tr 20.June.2014 Rev.2.2 tf -4- NJL6401R-3 MOUNTING METHOD NOTE Mounting was evaluated with the following profiles in our company, so there was no problem. However, confirm mounting by the condition of your company beforehand. The exposure of device under higher temperature many affect to the reliability of the products, it is recommended to complete soldering in the shortest time possible. Mounting: Twice soldering is allowed. INFRARED REFLOW SOLDERING METHOD Recommended reflow soldering procedure e 255C 230C 180C 150C a : Temperature ramping rate b : Pre-heating temperature time c : Temperature ramping rate d : Mounting temperature time e : Peak temperature : 1 to 4C/s : 150 to 180C : 60 to 120s : 1 to 4C /s : 230C : 20 to 40s : Lower than 255C f : Temperature ramping rate : 1 to 6C /s The temperature indicates at the surface of mold package Room Temp. a b c d f (NOTE1) Using reflow furnace with short wave infrared radiation heater such as halogen lamp Regarding temperature profile, please refer to those fo reflow furnace. In this case the resin surface temperature may become higher than lead terminals due to endothermic ally of black colored mold resin. Therefore, please avoid from direct exposure to mold resin. (NOTE2) Other method Such other methods of soldering as dipping the device into melted solder and vapor phase method (VPS) are not appropriate because the body of device will be heated rapidly. Therefore, these are not recommended to apply. (NOTE3) The resin gets softened right after soldering, so, the following care has to be taken Not to contact the lens surface to anything. Not to dip the device into water or any solvents. FLOE SOLDERING METHOD Flow soldering is not possible. IRON SOLDERING METHOD Iron soldering is not possible. 20.June.2014 Rev.2.2 -5- NJL6401R-3 CLEANING When Cleaning is needed the following conditions are recommended as the ultrasonic cleaning: Solvent : isopropyl alcohol Frequency: 40kHz Power: 30W/ ℓ Temperature: Lower than 50C Time: Shorter than 300s Cleaning: Once (NOTE1) Do not resonate the products. (NOTE2) Do not touch the products or their mounted board directly to the vibrator. (NOTE3) Do not clean the product immediately after the reflow. (NOTE4) A void the solvent or the vapor solvent from the resin of the device even during the mounting and using. IC STORAGE CONDITIONS AND ITS DURATION (1) Temperature and humidity ranges Pack Sealing Temperature: Humidity: Pack Opening Temperature: Humidity: 5 to 40 [C] 40 to 80 [] 5 to 30 [C] 40 to 70 [] After opening the bag, solder products within 48 hours. Avoid a dry environment below 40% because the products are is easily damageable by the electrical discharge. Store the products in the place where it does not create dew with the products due to a sudden change in temperature. (2) When baking, place the reel vertically to avoid load to the side. (3) Do not store the devices in corrosive-gas atmosphere. (4) Do not store the devices in a dusty place. (5) Do not expose the devices to direct rays of the sun. (6) Do not allow external forces or loads to be applied to IC’s. (7) Be careful because affixed label on the reel might be peeled off when baking. (8) The product is recommended to do the baking before using for the stability of the quality. BAKING In case of keeping expect above condition be sure to apply baking. (Heat-resistant tape) Baking method: Ta=60C, 48 to 72h, Three times baking is allowed Ta=100C, 2 to 6h, Three times baking is allowed STORAGE DURATION Within a year after delivering this device. For the products stored longer than a year, confirm their terminals and solderability before they are used. APPLICATION NOTES When using the laser diode in the vicinity of =405nm, there is the restriction in terms of use. Please be careful in the case of the use. 20.June.2014 Rev.2.2 -6- NJL6401R-3 PACKING SPECIFICATION PACKING DIMENTIONS UNIT : mm Drawing direction P2 Insert direction SIMBOL D0 P0 A T0 B D0 D1 E E F W0 P1 P2 B (TE1) W1 F P0 T0 T1 W0 P1 A T1 D1 W1 DIMENSION 1.40 2.00 1.50 1.10 1.75 3.50 4.00 4.00 2.00 0.25 1.05 8.00 5.40 ±0.10 ±0.10 REMARKS BOTOM DIMENSION BOTOM DIMENSION +0.10 -0.0 ±0.10 ±0.10 ±0.05 ±0.10 ±0.10 ±0.05 ±0.05 ±0.10 ±0.30 ±0.10 THICKNESS 0.1MAX * Carrier tape material : Polycarbonate(antistatic) Cover tape material : Polyester(antistatic) Taping Strength Pull up the cover tape from the carrier tape, and when the opening angle comes around 10 to 15 , and the peeling-off strength Is to be within the power of 20 to 40g. Packaging 1) The taped products are to be rolled up on the taping reel as on the drawing. 2) Rolling up specification 2-1) Start rolling : Carrier tape open space more than 20 Pieces. 2-2) End of rolling : Carrier tape open space more than 20 Pieces, and 2 round of reel space at the cover tape only. 3) Taping quantity : 2,000 Pieces 4) Seal off after putting each reels in a damp proof bag with silica gel. E A B D C SIMBOL DIMENSION A φ180.0±1.0 B φ60.0±1.0 C φ13.0±0.2 D φ21.0±0.8 E 2.0±0.5 W0 9.5±1.0 W1 13.1±1.0 * Reel material : PPE(antistatic) W0 W1 [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. 20.June.2014 Rev.2.2 -7-