TIP140T/141T/142T
TIP140T/141T/142T
Monolithic Construction With Built In BaseEmitter Shunt Resistors
• High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.)
• Industrial Use
• Complement to TIP145T/146T/147T
TO-220
1
1.Base
2.Collector
3.Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
60
80
100
Units
V
V
V
VCEO
Collector-Emitter Voltage : TIP140T
: TIP141T
: TIP142T
60
80
100
V
V
V
VEBO
IC
Emitter-Base Voltage
5
V
Collector Current (DC)
10
A
ICP
Collector Current (Pulse)
15
A
IB
Base Current (DC)
0.5
A
PC
Collector Dissipation (TC=25°C)
80
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
: TIP140T
: TIP141T
: TIP142T
Equivalent Circuit
C
B
R1
R2
R 1 ≅ 8kΩ
R 2 ≅ 0.12 k Ω
E
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
ICEO
ICBO
Parameter
Collector-Emitter Sustaining Voltage
: TIP140T
: TIP141T
: TIP142T
Test Condition
IC = 30mA, IB = 0
Min.
Typ.
Max.
60
80
100
Units
V
V
V
Collector Cut-off Current
: TIP140T
: TIP141T
: TIP142T
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
2
2
2
mA
mA
mA
: TIP140T
: TIP141T
: TIP142T
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
1
1
1
mA
mA
mA
Collector Cut-off Current
IEBO
Emitter Cut-off Current
VBE = 5V, IC = 0
hFE
DC Current Gain
VCE = 4V, IC = 5A
VCE =4V, IC = 10A
2
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 5A, IB = 10mA
IC = 10A, IB = 40mA
2
3
1000
500
mA
mA
V
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10A, IB = 40mA
3.5
V
VBE(on)
Base-Emitter On Voltage
VCE = 4V, IC = 10A
3
V
VCC = 30V, IC = 5A
IB1 = 20mA
IB2 = -20mA
RL = 6Ω
tD
Delay Time
tR
Rise Time
tSTG
Storage Time
tF
Fall Time
©2002 Fairchild Semiconductor Corporation
0.15
µs
0.55
µs
2.5
µs
2.5
µs
Rev. B1, December 2002
TIP140T/141T/142T
Typical Characteristics
10
IB = 2000uA
IB=
IB = 1800uA
8
IB = 1600uA
7
IB = 1400uA
100k
uA
1200
00uA
= 10
IB = 800uA
IB
VCE = 4V
IB = 600uA
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
9
IB = 400uA
6
5
4
IB = 200uA
3
2
10k
1k
100
1
0
0
1
2
3
4
10
0.1
5
1
Figure 1. Static Characteristic
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
100
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 2. DC current Gain
1000
10
f=0.1MHz
Cob[pF], CAPACITANCE
IC=500IB
VBE(sat)
1
VCE(sat)
0.1
100
10
0.01
0.1
1
10
1
100
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
100
1000
Figure 4. Collector Output Capacitance
100
PC[W], POWER DISSIPATION
100
10
DC
IC[A], COLLECTOR CURRENT
10
VCB[V], COLLECTOR-BASE VOLTAGE
1
TIP140T
TIP141T
80
60
40
20
TIP142T
0
0.1
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
1000
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 6. Power Derating
Rev. B1, December 2002
TIP140T/141T/142T
Package Dimensions
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
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This datasheet contains final specifications. Fairchild
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The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1