SS8050
SS8050
2W Output Amplifier of Portable Radios in
Class B Push-pull Operation.
• Complimentary to SS8550
• Collector Current: IC=1.5A
• Collector Power Dissipation: PC=2W (TC=25°C)
TO-92
1
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Ratings
40
Units
V
VCEO
VEBO
Collector-Emitter Voltage
25
V
Emitter-Base Voltage
6
IC
Collector Current
V
1.5
A
PC
Collector Power Dissipation
1
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-65 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC=100µA, IE=0
Min.
40
BVCEO
Collector-Emitter Breakdown Voltage
IC=2mA, IB=0
25
BVEBO
Emitter-Base Breakdown Voltage
IE=100µA, IC=0
6
ICBO
Collector Cut-off Current
VCB=35V, IE=0
IEBO
Emitter Cut-off Current
VEB=6V, IC=0
hFE1
hFE2
hFE3
DC Current Gain
VCE=1V, IC=5mA
VCE=1V, IC=100mA
VCE=1V, IC=800mA
Typ.
Max.
Units
V
V
V
45
85
40
100
nA
100
nA
300
VCE (sat)
Collector-Emitter Saturation Voltage
IC=800mA, IB=80mA
0.5
VBE (sat)
Base-Emitter Saturation Voltage
IC=800mA, IB=80mA
1.2
V
VBE (on)
Base-Emitter On Voltage
VCE=1V, IC=10mA
1
V
Cob
Output Capacitance
VCB=10V, IE=0, f=1MHz
fT
Current Gain Bandwidth Product
VCE=10V, IC=50mA
V
9.0
pF
100
MHz
hFE Classification
Classification
B
C
D
hFE2
85 ~ 160
120 ~ 200
160 ~ 300
©2004 Fairchild Semiconductor Corporation
Rev. B2, August 2004
SS8050
Typical Characteristics
0.5
1000
0.4
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
VCE = 1V
IB = 3.0mA
IB = 2.5mA
IB = 2.0mA
0.3
IB = 1.5mA
0.2
IB = 1.0mA
0.1
100
10
IB = 0.5mA
0
0.4
0.8
1.2
1.6
1
0.1
2.0
1
VCE[V], COLLECTOR-EMITTER VOLTAGE
10000
100
IC = 10 IB
VCE = 1V
VBE(sat)
1000
100
VCE(sat)
10
0.1
1000
Figure 2. DC current Gain
IC[mA], COLLECTOR CURRENT
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
100
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
1
10
100
10
1
0.1
0.0
1000
0.2
0.4
0.6
0.8
1.0
1.2
VBE[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
1000
fT[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
1000
IE = 0
f = 1MHz
Cob [pF], CAPACITANCE
10
100
10
1
1
10
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2004 Fairchild Semiconductor Corporation
100
VCE = 10V
100
10
1
1
10
100
400
IC[mA], COLLECTOR CURRENT
Figure 6. Current Gain Bandwidth Product
Rev. B2, August 2004
SS8050
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B2, August 2004
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As used herein:
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or (b) support or sustain life, or (c) whose failure to perform
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when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2004 Fairchild Semiconductor Corporation
Rev. I11