FGD4536
360 V PDP Trench IGBT
Features
General Description
•
•
•
•
•
Using novel trench IGBT technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for consumer
appliances and PDP TV applications where low conduction and
switching losses are essential.
High Current Capability
Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 50 A
High Input Impedance
Fast Switching
RoHS Compliant
Applications
• PDP TV, Consumer Appliances
C
G
TO-252/D-PAK
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Unit
VCES
Collector to Emitter Voltage
360
V
VGES
Gate to Emitter Voltage
 30
V
Pulsed Collector Current
@ TC =
25oC
220
A
Maximum Power Dissipation
@ TC = 25oC
125
W
IC pulse(1)*
PD
Maximum Power Dissipation
@ TC =
100oC
50
W
TJ
Operating Junction Temperature
-55 to +150
oC
Tstg
Storage Temperature Range
-55 to +150
oC
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
oC
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
RJC(IGBT)
Thermal Resistance, Junction to Case
-
1.0
oC/W
RJA
Thermal Resistance, Junction to Ambient
-
62.5
oC/W
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 1sec
* Ic_pluse limited by max Tj
©2011 Fairchild Semiconductor Corporation
FGD4536 Rev. C1
1
www.fairchildsemi.com
FGD4536 — 360 V PDP Trench IGBT
September 2013
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGD4536
FGD4536TM
TO252(D-PAK)
380 mm
16 mm
-
FGD4536
FGD4536TM_F065
TO252(D-PAK)
380 mm
16 mm
-
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
360
-
-
V
-
0.4
-
V/oC
Off Characteristics
BVCES
TJ
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250 A
Temperature Coefficient of Breakdown
VGE = 0V, IC = 250 A
Voltage
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V
-
-
100
A
IGES
G-E Leakage Current
VGE = VGES, VCE = 0 V
-
-
±400
nA
IC = 250 A, VCE = VGE
BVCES
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
2.4
3.3
4.0
V
IC = 20 A, VGE = 15 V
-
1.19
-
V
IC = 30 A, VGE = 15 V
-
1.33
-
V
IC = 50 A, VGE = 15 V,
TC = 25oC
-
1.59
1.8
V
IC = 50 A, VGE = 15 V,
TC = 125oC
-
1.66
-
V
-
1295
-
pF
-
56
-
pF
-
43
-
pF
-
5
-
ns
-
20
-
ns
-
41
-
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
-
182
-
ns
td(on)
Turn-On Delay Time
-
5
-
ns
tr
Rise Time
-
21
-
ns
td(off)
Turn-Off Delay Time
-
43
-
ns
tf
Fall Time
-
249
-
ns
Qg
Total Gate Charge
-
47
-
nC
Qge
Gate to Emitter Charge
-
5.4
-
nC
Qgc
Gate to Collector Charge
-
15
-
nC
©2011 Fairchild Semiconductor Corporation
FGD4536 Rev. C1
VCC = 200 V, IC = 20 A,
RG = 5 , VGE = 15 V,
Resistive Load, TC = 25oC
VCC = 200 V, IC = 20 A,
RG = 5 , VGE = 15 V,
Resistive Load, TC = 125oC
VCE = 200 V, IC = 20 A,
VGE = 15 V
2
www.fairchildsemi.com
FGD4536 — 360 V PDP Trench IGBT
Package Marking and Ordering Information
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
Figure 5. Saturation Voltage vs. VGE
Figure 6. Saturation Voltage vs. VGE
©2011 Fairchild Semiconductor Corporation
FGD4536 Rev. C1
3
www.fairchildsemi.com
FGD4536 — 360 V PDP Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 8. Capacitance Characteristics
Figure 9. Gate charge Characteristics
Figure 10. SOA Characteristics
Fgure 11. Turn-on Characteristics vs.
Gate Resistance
Figure 12. Turn-off Characteristics vs.
Gate Resistance
©2011 Fairchild Semiconductor Corporation
FGD4536 Rev. C1
4
www.fairchildsemi.com
FGD4536 — 360 V PDP Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
Figure 15. Switching Loss vs. Gate Resistance
Figure 16. Switching Loss vs. Collector Current
Figure 17. Turn off Switching SOA Characteristics
©2011 Fairchild Semiconductor Corporation
FGD4536 Rev. C1
5
www.fairchildsemi.com
FGD4536 — 360 V PDP Trench IGBT
Typical Performance Characteristics
FGD4536 — 360 V PDP Trench IGBT
Typical Performance Characteristics
Figure 18.Transient Thermal Impedance of IGBT
PDM
t1
©2011 Fairchild Semiconductor Corporation
FGD4536 Rev. C1
6
t2
www.fairchildsemi.com
FGD4536 — 360 V PDP Trench IGBT
Mechanical Dimensions
Figure 19. TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003.
Dimensions in Millimeters
©2011 Fairchild Semiconductor Corporation
FGD4536 Rev. C1
7
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
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THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
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expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2011 Fairchild Semiconductor Corporation
FGD4536 Rev. C1
8
www.fairchildsemi.com
FGD4536 — 360 V PDP Trench IGBT
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