FQD4P40
P-Channel QFET® MOSFET
-400 V, -2.7 A, 3.1 Ω
Description
Features
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology. This advanced
technology has been especially tailored to minimize onstate resistance, provide superior switching performance,
and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for
electronic lamp ballast based on complimentary half
bridge.
• -2.7 A, -400 V, RDS(on) = 3.1 Ω (Max.) @ VGS = -10 V,
ID = -1.35 A
• Low Gate Charge (Typ. 18 nC)
• Low Crss (Typ. 11 pF)
• 100% Avalanche Tested
S
D
G
S
G
D-PAK
D
Absolute Maximum Ratings T
Symbol
VDSS
ID
o
C
= 25 C unless otherwise noted.
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQD4P40TM
-400
- Continuous (TC = 100°C)
IDM
Drain Current
VGSS
Gate-Source Voltage
- Pulsed
(Note 1)
Unit
V
-2.7
A
-1.71
A
-10.8
A
± 30
V
mJ
EAS
Single Pulsed Avalanche Energy
(Note 2)
260
IAR
Avalanche Current
(Note 1)
-2.7
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
(Note 1)
5.0
-4.5
2.5
mJ
V/ns
W
50
0.4
-55 to +150
W
W/°C
°C
300
°C
dv/dt
PD
Power Dissipation (TC = 25°C)
TJ, TSTG
TL
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RJC
RJA
Parameter
FQD4P40TM
Thermal Resistance, Junction to Case, Max.
2.5
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
110
2
Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max.
©2000 Fairchild Semiconductor Corporation
FQD4P40 Rev. C0
1
Unit
oC/W
50
www.fairchildsemi.com
FQD4P40 — P-Channel QFET® MOSFET
November 2013
Part Number
FQD4P40TM
Electrical Characteristics T
Symbol
Package
DPAK
Top Mark
FQD4P40
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
o
C
= 25 C unless otherwise noted.
Parameter
Test Conditions
Min
Typ
Max
Unit
-400
--
--
V
--
0.36
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, Referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = -400 V, VGS = 0 V
--
--
-1
µA
VDS = -320 V, TC = 125°C
--
--
-10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = -30 V, VDS = 0 V
--
--
-100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = 30 V, VDS = 0 V
--
--
100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
-3.0
--
-5.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -1.35 A
--
2.44
3.1
Ω
gFS
Forward Transconductance
VDS = -50 V, ID = -1.35 A
--
2.5
--
S
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
--
520
680
pF
--
80
105
pF
--
11
15
pF
--
13
35
ns
--
55
120
ns
--
35
80
ns
--
37
85
ns
--
18
23
nC
--
3.8
--
nC
--
9.4
--
nC
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -200 V, ID = -3.5 A,
RG = 25 Ω
(Note 4)
VDS = -320 V, ID = -3.5 A,
VGS = -10 V
(Note 4)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-2.7
A
ISM
--
--
-10.8
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = -2.7 A
Drain-Source Diode Forward Voltage
--
--
-5.0
V
trr
Reverse Recovery Time
--
260
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -3.5 A,
dIF / dt = 100 A/µs
--
1.4
--
µC
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 62 mH, IAS = -2.7 A, VDD = -50 V, RG = 25 Ω, starting TJ = 25oC.
3. ISD ≤ -3.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25oC.
4. Essentially independent of operating temperature.
©2000 Fairchild Semiconductor Corporation
FQD4P40 Rev. C0
2
www.fairchildsemi.com
FQD4P40 — P-Channel QFET® MOSFET
Package Marking and Ordering Information
1
10
1
10
VGS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
Bottom : -5.5 V
-I D, Drain Current [A]
0
10
-I D , Drain Current [A]
Top :
-1
10
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
-2
10
0
10
150℃
25℃
-55℃
-1
-1
0
10
10
1
10
10
2
4
Figure 1. On-Region Characteristics
10
1
10
VGS = - 10V
6
-I DR , Reverse Drain Current [A]
RDS(on) [ Ω ],
Drain-Source On-Resistance
8
Figure 2. Transfer Characteristics
8
VGS = - 20V
4
2
※ Note : TJ = 25℃
0
10
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
-1
0
3
10
12
0.0
0.5
1.0
-ID , Drain Current [A]
1200
-V GS , Gate-Source Voltage [V]
10
Ciss
600
Coss
400
0
-1
10
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
0
10
3.0
1
10
VDS = -80V
VDS = -200V
8
VDS = -320V
6
4
2
※ Note : ID = -3.5 A
0
0
2
4
6
8
10
12
14
16
18
20
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor Corporation
FQD4P40 Rev. C0
2.5
12
800
200
2.0
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000
1.5
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Capacitance [pF]
6
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
0
※ Notes :
1. VDS = -50V
2. 250μs Pulse Test
Figure 6. Gate Charge Characteristics
3
www.fairchildsemi.com
FQD4P40 — P-Channel QFET® MOSFET
!
2.5
2.0
1.1
RDS(ON) , (Normalized)
Drain-Source On-Resistance
-BV DSS , (Normalized)
Drain-Source Breakdown Voltage
1.2
1.0
※ Notes :
1. VGS = 0 V
2. ID = -250 μA
0.9
0.8
-100
-50
0
50
100
150
1.5
1.0
※ Notes :
1. VGS = -10 V
2. ID = -1.75 A
0.5
0.0
-100
200
-50
o
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
Operation in This Area
is Limited by R DS(on)
2.5
1
100 µs
-I D, Drain Current [A]
-I D, Drain Current [A]
10
1 ms
0
DC
10
-1
10
10 ms
※ Notes :
o
1. TC = 25 C
2.0
1.5
1.0
0.5
o
2. TJ = 150 C
3. Single Pulse
-2
10
0
1
10
2
10
0.0
25
3
10
10
50
ZθJ C(t), Thermal Response [oC/W]
Figure 9. Maximum Safe Operating Area
10
125
150
D = 0 .5
0
※ N o te s :
1 . Z θ J C ( t ) = 2 . 5 ℃ /W M a x .
2 . D u ty F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t )
0 .1
0 .0 5
-1
0 .0 2
0 .0 1
PDM
t1
s in g le p u ls e
10
100
Figure 10. Maximum Drain Current
vs. Case Temperature
0 .2
10
75
TC, Case Temperature [℃]
-VDS, Drain-Source Voltage [V]
t2
-2
10
-5
10
-4
10
t1,
-3
10
-2
10
-1
10
0
10
1
q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor Corporation
FQD4P40 Rev. C0
4
www.fairchildsemi.com
FQD4P40 — P-Channel QFET® MOSFET
!
FQD4P40 — P-Channel QFET® MOSFET
200nF
200nF
12V
VGS
Same
Same T
Ty
ype
as DUT
DUT
50KΩ
50K
Ω
Qg
300nF
300nF
VDS
VGS
Qgs
Qgd
DUT
DUT
IG = const.
Charg
Ch
arge
e
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
t on
td(on
d( on))
VDD
VGS
VGS
t of
offf
tr
td(of
d( offf)
tf
10
10%
%
DUT
VGS
VDS
90%
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
BVDS
DSS
S
1
-----------------------------EAS = ---- L IAS2 ------2
BVDS
DSS
S - VDD
L
tp
ID
RG
VGS
Tim
Ti
me
VDD
VDD
VDS (t)
(t))
ID (t
DUT
DUT
IAS
BVDSS
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2000 Fairchild Semiconductor Corporation
FQD4P40 Rev. C0
5
www.fairchildsemi.com
FQD4P40 — P-Channel QFET® MOSFET
+
VDS
DUT
_
I SD
L
Driver
Driv
er
RG
VGS
VGS
( Driver
Driver )
I SD
( DUT )
Compliment of DUT
Comp
(N-C
(N-Channel
hannel))
VDD
• dv/dt cont
ntrrolled b
byy RG
• ISD con
onttrol
ollled by pu
pullse pe
perriod
Gate P
Pul
ulsse W idth
ul
D = -------------------------Gate
te Pul
Ga
Pulse Per
Period
10
10V
V
Body
Bo
dy D
Diiod
ode
eR
Re
everse C
Cu
urren
entt
IRM
di//dt
di
IFM , Bo
Body
dy D
Diiod
ode
eF
For
orw
ward Cu
Curren
entt
VDS
( DUT )
VSD
Body
Bo
dy D
Diiode
For
Forw
ward Vol
Volttag
age
e Drop
Drop
VDD
Body
Bo
dy Diod
Diode
e Recov
cove
ery dv
dv/d
/dtt
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2000 Fairchild Semiconductor Corporation
FQD4P40 Rev. C0
6
www.fairchildsemi.com
FQD4P40 — P-Channel QFET® MOSFET
Mechanical Dimensions
Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003
©2000 Fairchild Semiconductor Corporation
FQD4P40 Rev. C0
7
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2000 Fairchild Semiconductor Corporation
FQD4P40 Rev. C0
8
www.fairchildsemi.com
FQD4P40 — P-Channel QFET® MOSFET
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