FDMS7650 - Micross Components

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FDMS7650
N-Channel PowerTrench® MOSFET
30 V, 100 A, 0.99 mΩ
Features
General Description
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge and extremely low rDS(on).
„ MSL1 robust package design
Applications
„ Max rDS(on) = 0.99 mΩ at VGS = 10 V, ID = 36 A
„ Max rDS(on) = 1.55 mΩ at VGS = 4.5 V, ID = 32 A
„ 100% UIL tested
„ OringFET
„ RoHS Compliant
„ Synchronous rectifier
D
D
D
D
G
S
Top
S
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
Pin 1
S
Bottom
Power 56
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
(Note 4)
Drain Current -Continuous (Package limited)
ID
TC = 25 °C
-Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C
PD
TJ, TSTG
Units
V
±20
V
100
232
(Note 1a)
36
(Note 3)
544
-Pulsed
A
200
Single Pulse Avalanche Energy
EAS
Ratings
30
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
104
(Note 1a)
Operating and Storage Junction Temperature Range
2.5
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
1.2
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS7650
Device
FDMS7650
©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.D3
Package
Power 56
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMS7650 N-Channel PowerTrench® MOSFET
January 2012
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = 20 V, VDS = 0 V
100
nA
3
V
30
V
15
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
1
1.9
-6
mV/°C
VGS = 10 V, ID = 36 A
0.8
0.99
VGS = 4.5 V, ID = 32 A
1.1
1.55
VGS = 10 V, ID = 36 A, TJ = 125 °C
1.1
1.7
VDS = 5 V, ID = 36 A
267
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
11250
14965
pF
3050
4055
pF
240
360
pF
1.4
3
Ω
28
45
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
VDD = 15 V, ID = 36 A,
VGS = 10 V, RGEN = 6 Ω
24
38
ns
83
133
ns
21
34
ns
Total Gate Charge
VGS = 0 V to 10 V
149
209
nC
Qg
Total Gate Charge
88
Gate to Source Charge
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 36 A
63
Qgs
34
nC
Qgd
Gate to Drain “Miller” Charge
13
nC
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2.1 A
(Note 2)
0.7
1.2
VGS = 0 V, IS = 36 A
(Note 2)
0.8
1.3
IF = 36 A, di/dt = 100 A/μs
V
69
97
ns
56
90
nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 1 mH, IAS = 33 A, VDD = 27 V, VGS = 10 V.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.D3
2
www.fairchildsemi.com
FDMS7650 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
200
7
ID, DRAIN CURRENT (A)
160
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
VGS = 4.5 V
120
VGS = 4 V
80
VGS = 3.5 V
40
VGS = 3 V
0
0
0.5
1.0
1.5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
6
VGS = 3 V
5
4
VGS = 3.5 V
3
VGS = 4 V
2
1
VGS = 4.5 V
2.0
0
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
120
160
200
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
-75
-50
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
10
ID = 36 A
VGS = 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
80
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
8
ID = 36A
6
4
TJ = 125 oC
2
TJ = 25 oC
0
100 125 150
2
4
TJ, JUNCTION TEMPERATURE (oC)
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
200
200
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
160
ID, DRAIN CURRENT (A)
VGS = 10 V
0
VDS = 3 V
120
TJ = 150 oC
80
TJ =
25 oC
40
TJ = -55 oC
0
1
2
3
VGS = 0 V
TJ = 150 oC
10
TJ = 25 oC
1
TJ = -55 oC
0.1
0.0
4
VGS, GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.D3
100
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDMS7650 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
VGS, GATE TO SOURCE VOLTAGE (V)
10
20000
ID = 36 A
10000
Ciss
CAPACITANCE (pF)
8
VDD = 10 V
6
VDD = 15 V
4
VDD = 20 V
Coss
1000
2
Crss
f = 1 MHz
VGS = 0 V
100
0.1
0
0
40
80
120
160
Qg, GATE CHARGE (nC)
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
300
100
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
o
RθJC = 1.2 C/W
TJ = 25 oC
10
TJ = 125 oC
1
-3
10
-2
-1
10
10
1
10
2
200
VGS = 4.5 V
100
Limited by Package
0
25
3
10
VGS = 10 V
10
50
150
1000
P(PK), PEAK TRANSIENT POWER (W)
100
ID, DRAIN CURRENT (A)
125
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
500
10
0.1
100
o
Figure 9. Unclamped Inductive
Switching Capability
1
75
Tc, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
1 ms
10 ms
100 ms
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
1s
10 s
RθJA = 125 oC/W
DC
o
TA = 25 C
0.01
0.01
0.1
1
10
100200
TA = 25 oC
100
10
1
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.D3
SINGLE PULSE
RθJA = 125 oC/W
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMS7650 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 125 C/W
0.001
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.D3
5
www.fairchildsemi.com
FDMS7650 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMS7650 N-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.D3
6
www.fairchildsemi.com
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.D3
7
www.fairchildsemi.com
FDMS7650 N-Channel PowerTrench® MOSFET
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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