FDMS7650
N-Channel PowerTrench® MOSFET
30 V, 100 A, 0.99 mΩ
Features
General Description
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge and extremely low rDS(on).
„ MSL1 robust package design
Applications
„ Max rDS(on) = 0.99 mΩ at VGS = 10 V, ID = 36 A
„ Max rDS(on) = 1.55 mΩ at VGS = 4.5 V, ID = 32 A
„ 100% UIL tested
„ OringFET
„ RoHS Compliant
„ Synchronous rectifier
D
D
D
D
G
S
Top
S
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
Pin 1
S
Bottom
Power 56
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
(Note 4)
Drain Current -Continuous (Package limited)
ID
TC = 25 °C
-Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C
PD
TJ, TSTG
Units
V
±20
V
100
232
(Note 1a)
36
(Note 3)
544
-Pulsed
A
200
Single Pulse Avalanche Energy
EAS
Ratings
30
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
104
(Note 1a)
Operating and Storage Junction Temperature Range
2.5
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
1.2
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS7650
Device
FDMS7650
©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.D3
Package
Power 56
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMS7650 N-Channel PowerTrench® MOSFET
January 2012
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = 20 V, VDS = 0 V
100
nA
3
V
30
V
15
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
1
1.9
-6
mV/°C
VGS = 10 V, ID = 36 A
0.8
0.99
VGS = 4.5 V, ID = 32 A
1.1
1.55
VGS = 10 V, ID = 36 A, TJ = 125 °C
1.1
1.7
VDS = 5 V, ID = 36 A
267
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
11250
14965
pF
3050
4055
pF
240
360
pF
1.4
3
Ω
28
45
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
VDD = 15 V, ID = 36 A,
VGS = 10 V, RGEN = 6 Ω
24
38
ns
83
133
ns
21
34
ns
Total Gate Charge
VGS = 0 V to 10 V
149
209
nC
Qg
Total Gate Charge
88
Gate to Source Charge
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 36 A
63
Qgs
34
nC
Qgd
Gate to Drain “Miller” Charge
13
nC
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2.1 A
(Note 2)
0.7
1.2
VGS = 0 V, IS = 36 A
(Note 2)
0.8
1.3
IF = 36 A, di/dt = 100 A/μs
V
69
97
ns
56
90
nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 1 mH, IAS = 33 A, VDD = 27 V, VGS = 10 V.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.D3
2
www.fairchildsemi.com
FDMS7650 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
200
7
ID, DRAIN CURRENT (A)
160
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
VGS = 4.5 V
120
VGS = 4 V
80
VGS = 3.5 V
40
VGS = 3 V
0
0
0.5
1.0
1.5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
6
VGS = 3 V
5
4
VGS = 3.5 V
3
VGS = 4 V
2
1
VGS = 4.5 V
2.0
0
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
120
160
200
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
-75
-50
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
10
ID = 36 A
VGS = 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
80
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
8
ID = 36A
6
4
TJ = 125 oC
2
TJ = 25 oC
0
100 125 150
2
4
TJ, JUNCTION TEMPERATURE (oC)
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
200
200
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
160
ID, DRAIN CURRENT (A)
VGS = 10 V
0
VDS = 3 V
120
TJ = 150 oC
80
TJ =
25 oC
40
TJ = -55 oC
0
1
2
3
VGS = 0 V
TJ = 150 oC
10
TJ = 25 oC
1
TJ = -55 oC
0.1
0.0
4
VGS, GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.D3
100
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDMS7650 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
VGS, GATE TO SOURCE VOLTAGE (V)
10
20000
ID = 36 A
10000
Ciss
CAPACITANCE (pF)
8
VDD = 10 V
6
VDD = 15 V
4
VDD = 20 V
Coss
1000
2
Crss
f = 1 MHz
VGS = 0 V
100
0.1
0
0
40
80
120
160
Qg, GATE CHARGE (nC)
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
300
100
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
o
RθJC = 1.2 C/W
TJ = 25 oC
10
TJ = 125 oC
1
-3
10
-2
-1
10
10
1
10
2
200
VGS = 4.5 V
100
Limited by Package
0
25
3
10
VGS = 10 V
10
50
150
1000
P(PK), PEAK TRANSIENT POWER (W)
100
ID, DRAIN CURRENT (A)
125
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
500
10
0.1
100
o
Figure 9. Unclamped Inductive
Switching Capability
1
75
Tc, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
1 ms
10 ms
100 ms
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
1s
10 s
RθJA = 125 oC/W
DC
o
TA = 25 C
0.01
0.01
0.1
1
10
100200
TA = 25 oC
100
10
1
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.D3
SINGLE PULSE
RθJA = 125 oC/W
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMS7650 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 125 C/W
0.001
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.D3
5
www.fairchildsemi.com
FDMS7650 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMS7650 N-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.D3
6
www.fairchildsemi.com
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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2.
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.D3
7
www.fairchildsemi.com
FDMS7650 N-Channel PowerTrench® MOSFET
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