FQP27P06
P-Channel QFET® MOSFET
- 60 V, - 27 A, 70 m
Description
Features
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
• - 27 A, - 60 V, RDS(on) = 70 m (Max.) @ VGS = - 10 V,
ID = - 13.5 A
• Low Gate Charge (Typ. 33 nC)
• Low Crss (Typ. 120 pF)
• 100% Avalanche Tested
• 175C Maximum Junction Temperature Rating
S

G
●
●
▶ ▲
●
G
D
TO-220
S
D
Absolute Maximum Ratings
Symbol
VDSS
ID

TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQP27P06
-60
- Continuous (TC = 100°C)
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
Unit
V
-27
A
-19.1
A
-108
A
 25
V
(Note 2)
560
mJ
Avalanche Current
(Note 1)
-27
A
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
12
-7.0
120
0.8
-55 to +175
mJ
V/ns
W
W/°C
°C
300
°C
FQP27P06
1.25
Unit
°C/W
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RJC
Parameter
Thermal Resistance, Junction-to-Case, Max.
RCS
Thermal Resistance, Case-to-Sink, Typ.
0.5
°C/W
RJA
Thermal Resistance, Junction-to-Ambient, Max.
62.5
°C/W
©2001 Fairchild Semiconductor Corporation
FQP27P06 Rev.C0
1
www.fairchildsemi.com
FQP27P06 P-Channel QFET® MOSFET
March 2013
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions

Off Characteristics
Min
Typ
Max
Unit
-60
--
--
V
--
V/°C
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 A
BVDSS
/
TJ
Breakdown Voltage Temperature
Coefficient
ID = -250 A, Referenced to 25°C
--
-0.06
VDS = -60 V, VGS = 0 V
--
--
-1
A
VDS = -48 V, TC = 150°C
--
--
-10
A
Gate-Body Leakage Current, Forward
VGS = -25 V, VDS = 0 V
--
--
-100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = 25 V, VDS = 0 V
--
--
100
nA
IDSS
IGSSF
Zero Gate Voltage Drain Current

On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 A
-2.0
--
-4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -13.5 A
--
0.055
0.07

gFS
Forward Transconductance
VDS = -30 V, ID = -13.5 A
--
12.4
--
S
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
--
1100
1400
pF
--
510
660
pF
--
120
155
pF

Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance

Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -30 V, ID = -13.5 A,
RG = 25 
(Note 4)
VDS = -48 V, ID = -27 A,
VGS = -10 V
(Note 4)
--
18
45
ns
--
185
380
ns
--
30
70
ns
--
90
190
ns
--
33
43
nC
--
6.8
--
nC
--
18
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-27
A
ISM
--
--
-108
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = -27 A
Drain-Source Diode Forward Voltage
--
--
-4.0
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -27 A,
dIF / dt = 100 A/s
--
105
--
ns
--
0.41
--
C
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.9mH, IAS = -27A, VDD = -25V, RG = 25 Starting TJ = 25°C
3. ISD ≤ -27A, di/dt ≤ 300A/s, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
FQP27P06 Rev.C0
2
www.fairchildsemi.com
FQP27P06 P-Channel QFET® MOSFET
Elerical Characteristics
2
2
10
10
VGS
- 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
1
10
-ID , Drain Current [A]
-ID, Drain Current [A]
Top :
0
1
10
175℃
25℃
0
10
-55℃
※ Notes :
1. VDS = -30V
2. 250μ s Pulse Test
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
10
-1
-1
0
10
10
1
10
2
10
4
Figure 1. On-Region Characteristics
2
0.20
-IDR , Reverse Drain Current [A]
RDS(on) [],
Drain-Source On-Resistance
10
10
0.16
VGS = - 10V
0.12
VGS = - 20V
0.08
0.04
※ Note : TJ = 25℃
1
10
0
10
175℃
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
-1
0
10
20
30
40
50
60
70
80
10
90 100 110 120 130
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
3000
12
-VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2500
Coss
Capacitance [pF]
8
Figure 2. Transfer Characteristics
0.24
0.00
6
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
2000
Ciss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
1500
1000
Crss
500
0
-1
10
0
10
VDS = -30V
8
10
VDS = -48V
6
4
2
※ Note : ID = -27 A
0
1
0
5
10
15
20
25
30
35
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
FQP27P06 Rev.C0
10
Figure 6. Gate Charge Characteristics
3
www.fairchildsemi.com
FQP27P06 P-Channel QFET® MOSFET
Typical Characteristics
(Continued)
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
-BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = -250 μA
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = -10 V
2. ID = -13.5 A
0.5
0.0
-100
200
-50
o
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
30
Operation in This Area
is Limited by R DS(on)
25
2
100 s
-ID, Drain Current [A]
-ID, Drain Current [A]
10
1 ms
10 ms
1
DC
10
0
10
※ Notes :
o
1. TC = 25 C
20
15
10
5
o
2. TJ = 175 C
3. Single Pulse
0
25
-1
10
0
1
10
2
10
10
50
Figure 9. Maximum Safe Operating Area
Zθ JC(t), Thermal Response
10
75
100
125
150
175
TC, Case Temperature [℃]
-VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
0
D = 0 .5
※ N o te s :
1 . Z θ J C ( t ) = 1 .2 5 ℃ /W M a x .
2 . D u t y F a c to r , D = t 1 / t 2
3 . T J M - T C = P D M * Z θ J C( t )
0 .2
0 .1
10
-1
0 .0 5
PDM
0 .0 2
0 .0 1
10
t1
s in g le p u ls e
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
FQP27P06 Rev.C0
4
www.fairchildsemi.com
FQP27P06 P-Channel QFET® MOSFET
Typical Characteristics
FQP27P06 P-Channel QFET® MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
-10V
300nF
VDS
VGS
Qgs
Qgd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
t on
td(on)
VDD
VGS
VGS
t off
tr
td(off)
tf
10%
DUT
-10V
VDS
90%
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
tp
ID
RG
VDD
DUT
-10V
VDS (t)
ID (t)
IAS
BVDSS
tp
©2001 Fairchild Semiconductor Corporation
FQP27P06 Rev.C0
VDD
Time
5
www.fairchildsemi.com
FQP27P06 P-Channel QFET® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
VDS
DUT
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Compliment of DUT
(N-Channel)
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
Body Diode Reverse Current
IRM
di/dt
IFM , Body Diode Forward Current
VDS
( DUT )
VSD
Body Diode
Forward Voltage Drop
VDD
Body Diode Recovery dv/dt
©2001 Fairchild Semiconductor Corporation
FQP27P06 Rev.C0
6
www.fairchildsemi.com
FQP27P06 P-Channel QFET® MOSFET
Package Dimensions
TO-220
©2001 Fairchild Semiconductor Corporation
FQP27P06 Rev.C0
7
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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2.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2001 Fairchild Semiconductor Corporation
FQP27P06 Rev.C0
8
www.fairchildsemi.com
FQP27P06 P-Channel QFET® MOSFET
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