IGBT
FMG2G50US60
Molding Type Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
•
•
•
•
•
•
UL Certified No. E209204
Short Circuit rated 10us @ TC = 100°C, VGE = 15V
High Speed Switching
Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 50A
High Input Impedance
Fast & Soft Anti-Parallel FWD
Package Code : 7PM-GA
E1/C2
Application
•
•
•
•
•
C1
AC & DC Motor Controls
General Purpose Inverters
Robotics
Servo Controls
UPS
E2
G1
E1
G2
E2
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
TJ
Tstg
Viso
Mounting
Torque
TC = 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminals Screw : M5
Mounting Screw : M5
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ AC 1minute
FMG2G50US60
600
± 20
50
100
50
100
10
250
-40 to +150
-40 to +125
2500
2.0
2.0
Units
V
V
A
A
A
A
us
W
°C
°C
V
N.m
N.m
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
©2001 Fairchild Semiconductor Corporation
FMG2G50US60 Rev. A
FMG2G50US60
September 2001
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
600
--
--
V
VGE = 0V, IC = 1mA
--
0.6
--
V/°C
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
---
---
250
± 100
uA
nA
VGE = 0V, IC = 50mA
5.0
6.0
8.5
V
IC = 50A, VGE = 15V
--
2.2
2.8
V
VCE = 30V, VGE = 0V,
f = 1MHz
----
3460
480
140
----
pF
pF
pF
---------------
20
30
60
110
1.1
1.2
2.3
20
30
70
250
1.2
2.4
3.6
---200
-----------
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
VCC = 300 V, VGE = 15V
100°C
10
--
--
us
VCE = 300 V, IC = 50A,
VGE = 15V
----
145
28
65
210
40
95
nC
nC
nC
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
©2001 Fairchild Semiconductor Corporation
VCC = 300 V, IC = 50A,
RG = 5.9Ω, VGE = 15V
Inductive Load, TC = 25°C
VCC = 300 V, IC = 50A,
RG = 5.9Ω, VGE = 15V
Inductive Load, TC = 125°C
@ TC =
FMG2G50US60 Rev. A
FMG2G50US60
Electrical Characteristics of IGBT T
C
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
Diode Reverse Recovery Charge
= 25°C unless otherwise noted
Test Conditions
TC = 25°C
IF = 50A
TC = 100°C
IF = 50A
di / dt = 100 A/us
Min.
--
Typ.
1.9
Max.
2.8
--
1.8
--
TC = 25°C
--
90
130
TC = 100°C
--
130
--
TC = 25°C
--
5
6.5
TC = 100°C
--
7
--
TC = 25°C
--
225
422
TC = 100°C
--
455
--
Units
V
ns
A
nC
Thermal Characteristics
Symbol
RθJC
RθJC
RθCS
Weight
Parameter
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Case-to-Sink
(Conductive grease applied)
Weight of Module
©2001 Fairchild Semiconductor Corporation
Typ.
--0.05
--
Max.
0.5
1.0
-190
Units
°C/W
°C/W
°C/W
g
FMG2G50US60 Rev. A
FMG2G50US60
Electrical Characteristics of DIODE T
140
15V
Common Emitter
VGE = 15V
TC = 25℃ ━━
TC = 125℃ ------
120
Collector Current, I C [A]
Collector Current, IC [A]
120
12V
100
80
60
VGE = 10V
40
100
80
60
40
20
20
0
0
0
2
4
6
8
1
Collector - Emitter Voltage, VCE [V]
Fig 2. Typical Saturation Voltage Characteristics
5
60
VCC = 300V
Load Current : peak of square wave
Common Emitter
V GE = 15V
50
4
100A
3
50A
2
IC = 30A
Load Current [A]
Collector - Emitter Voltage, VCE [V]
10
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
1
40
30
20
10
Duty cycle : 50%
TC = 100℃
Power Dissipation = 70W
0
0
-50
0
50
100
1
150
10
100
1000
Frequency [KHz]
Case Temperature, T C [℃]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
20
Common Emitter
TC = 25℃
Collector - Emitter Voltage, V CE [V]
Collector - Emitter Voltage, V CE [V]
FMG2G50US60
20V
Common Emitter
T C = 25℃
140
16
12
8
100A
4
50A
IC = 30A
0
Common Emitter
TC = 125℃
16
12
8
100A
4
50A
IC = 30A
0
0
4
8
12
16
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
©2001 Fairchild Semiconductor Corporation
20
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Fig 6. Saturation Voltage vs. VGE
FMG2G50US60 Rev. A
1000
Common Emitter
V GE = 0V, f = 1MHz
T C = 25℃
6000
FMG2G50US60
7000
Common Emitter
VCC = 300V, VGE = +/- 15V
IC = 50A
0
Ton
0
Cies
Switching Time [ns]
Capacitance [pF]
TC = 25 C
TC = 125 C
5000
4000
3000
Coes
2000
Tr
100
Cres
1000
0
10
1
10
1
10
Gate Resistance, RG [Ω ]
Collector - Emitter Voltage, V CE [V]
Fig 8. Turn-On Characteristics vs.
Fig 7. Capacitance Characteristics
Common Emitter
VCC = 300V, VGE = +/- 15V
IC = 50A
Common Emitter
VCC = 300V, VGE = +/- 15V
IC = 50A
10000
0
TC = 25 C
0
TC = 25 C
0
0
Switching Time [ns]
1000
TC = 125 C
Switching Loss [uJ]
TC = 125 C
Toff
Tf
Eoff
Eon
Eoff
100
1000
1
10
1
10
Gate Resistance, RG [Ω ]
Gate Resistance, Rg [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Common Emitter
VCC = 300V, VGE = +/- 15V
RG = 5.9Ω
Common Emitter
VCC = 300V, VGE = +/- 15V
RG = 5.9Ω
1000
0
0
TC = 25 C
TC = 25 C
0
0
TC = 125 C
Switching Time [ns]
Switching Time [ns]
TC = 125 C
Ton
100
Tr
Toff
Tf
Toff
Tf
100
10
10
20
30
40
50
60
70
80
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
90
100
10
20
30
40
50
60
70
80
90
100
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
FMG2G50US60 Rev. A
FMG2G50US60
15
Gate - Emitter Voltage, VGE [ V ]
Common Emitter
VCC = 300V, VGE = +/- 15V
RG = 5.9Ω
0
TC = 25 C
Switching Loss [uJ]
10000
0
TC = 125 C
Eoff
Eon
Eoff
1000
Common Emitter
R L = 5.9 Ω
T C = 25℃
12
200 V
9
6
3
0
100
10
20
30
40
50
60
70
80
90
0
100
40
Collector Current, IC [A]
120
160
Fig 14. Gate Charge Characteristics
300
300
IC MAX. (Pulsed)
100
50us
IC MAX. (Continuous)
100
100us
Collector Current, I C [A]
Collector Current, I C [A]
80
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
1㎳
10
DC Operation
1
0.1
300 V
V CC = 100 V
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linerarly with increase
in temperature
0.3
1
10
Safe Operating Area
o
V GE = 20V, T C = 100 C
10
100
1
1000
1
10
Collector-Emitter Voltage, VCE [V]
100
1000
Collector-Emitter Voltage, V CE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
300
1
Thermal Response, Zthjc [℃/W]
Collector Current, I C [A]
100
10
1
Single Nonrepetitive
Pulse T J ≤ 125℃
V GE = 15V
RG = 5.9 Ω
0.1
0
100
200
0.01
T C = 25℃
IGBT :
DIODE :
1E-3
300
400
500
Collector-Emitter Voltage, V CE [V]
Fig 17. RBSOA Characteristics
©2001 Fairchild Semiconductor Corporation
0.1
600
700
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 18. Transient Thermal Impedance
FMG2G50US60 Rev. A
Peak Reverse Recovery Current, Irr [A]
Reverse Recovery Time, T rr [x10ns]
120
Forward Current, I
F
[A]
Common Cathode
V GE = 0V
T C = 25℃
T C = 125℃
80
40
0
0
1
2
Forward Voltage, V F [V]
Fig 19. Forward Characteristics
©2001 Fairchild Semiconductor Corporation
3
4
Trr
10
Irr
5
Common Cathode
di/dt = 100A/㎲
T C = 25℃
T C = 100℃
2
0
10
20
30
40
50
Forward Current, IF [A]
Fig 20. Reverse Recovery Characteristics
FMG2G50US60 Rev. A
FMG2G50US60
20
160
FMG2G50US60
Package Dimension
7PM-GA
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
FMG2G50US60 Rev. A
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LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H4