FGA40N60UFD
Ultrafast IGBT
General Description
Features
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
•
•
•
•
High speed switching
Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A
High input impedance
CO-PAK, IGBT with FRD : trr = 50ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
TO-3P
E
G C E
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
TC = 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
FGA40N60UFD
600
± 20
40
20
160
15
160
160
64
-55 to +150
-55 to +150
Units
V
V
A
A
A
A
A
W
W
°C
°C
300
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2003 Fairchild Semiconductor Corporation
Typ.
----
Max.
0.77
1.7
40
Units
°C/W
°C/W
°C/W
FGA40N60UFD Rev. A
FGA40N60UFD
IGBT
C
Symbol
Parameter
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
600
--
--
V
VGE = 0V, IC = 1mA
--
0.6
--
V/°C
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
---
---
250
± 100
uA
nA
3.5
---
5.1
2.3
3.1
6.5
3.0
--
V
V
V
----
1075
170
50
----
pF
pF
pF
-------------------
15
30
65
35
470
130
600
30
37
110
80
500
310
810
77
20
25
14
--130
100
--1000
--200
250
--1200
150
30
40
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
Min.
--
Typ.
1.4
Max.
1.7
Units
--
1.3
--
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
IC = 20mA, VCE = VGE
IC = 20A, VGE = 15V
IC = 40A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Le
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
VCC = 300 V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 300 V, IC = 20A,
VGE = 15V
Measured 5mm from PKG
Electrical Characteristics of DIODE T
C
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
Diode Reverse Recovery Charge
©2003 Fairchild Semiconductor Corporation
= 25°C unless otherwise noted
Test Conditions
TC = 25°C
IF = 15A
TC = 100°C
IF = 15A,
di/dt = 200A/us
TC = 25°C
--
50
95
TC = 100°C
--
74
--
TC = 25°C
--
4.5
6.0
TC = 100°C
--
6.5
--
TC = 25°C
--
80
180
TC = 100°C
--
220
--
V
ns
A
nC
FGA40N60UFD Rev. A
FGA40N60UFD
Electrical Characteristics of the IGBT T
80
Common Emitter
Tc = 25℃
20V
Common Emitter
V GE=15V
Tc= 25℃
Tc= 125℃
70
Collector Current , Ic (A)
15V
120
Collector Current, I c (A)
FGA40N60UFD
160
12V
80
VGE = 10V
40
60
50
40
30
20
10
0
0
0
2
4
6
0.5
8
Collector-Emitter Voltage,VCE(V)
Fig 1. Typical Output Characteristics
30
Common Emitter
Vge=15V
Vcc = 300V
Load Current : peak of square wave
25
3
40A
20A
2
Ic=10A
1
20
15
10
5
Duty cycle : 50%
Tc = 100℃
Powe Dissipation = 32W
0
0
30
60
90
120
0
150
0.1
Case Temperature, T C [℃]
10
100
1000
Fig 4. Load Current vs. Frequency
20
20
CE
Collector - Emitter Voltage, V
16
12
8
20A
4
Common Emitter
TC = 125℃
[V]
Common Emitter
TC = 25℃
[V]
CE
1
Frequency [kHz]
Fig. 1 Fig3.Saturation Voltage vs. Case
Temperature at Variant Current Level
Collector - Emitter Voltage, V
10
Fig 2. Typical Saturation Voltage
Load Current [A]
Collector - Emitter Voltage, VCE [V]
4
1
Collector-Emitter Voltage, V CE(V)
40A
IC = 10A
0
16
12
8
40A
20A
4
Ic=10A
0
0
4
8
12
16
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
©2003 Fairchild Semiconductor Corporation
20
0
4
8
12
16
20
Gate - Emitter Voltage, V GE [V]
Fig 6. Saturation Voltage vs. VGE
FGA40N60UFD Rev. A
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
2500
Common Emitter
Vcc=300V,VGE= ± 15V
Ic=20A
Tc = 25℃
Tc = 125℃
Switching Time (ns)
Cies
Capacitance (pF)
FGA40N60UFD
300
3000
2000
Coes
1500
1000
Cres
100
Ton
Tr
500
10
0
1
1
30
10
10
Fig 7. Capacitance Characteristics
200
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
2000
Common Emitter
Vcc=300V,V GE= ± 15V
Ic=20A
Tc = 25℃
Tc = 125℃
Common Emitter
Vcc=300V,VGE=± 15V
Ic=20A
Tc = 25℃
Tc = 125℃
1000
Toff
Switching Time (uJ)
Switching Time (ns)
100
Gate Resistance, RG( Ω )
Collector-Emitter Voltage, VCE (V)
100
Tf
Eon
Eoff
100
Tf
50
20
1
10
100
1
200
10
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
1000
Ton
Common Emitter
VCC = 300V, V GE = ± 15V
R G = 10 Ω
T C = 25℃
T C = 125℃
Switching Time [nS]
Switching Time (ns)
100
Tr
200
Fig 10. Switching Loss vs. Gate Resistance
200
10
100
Gate Resistance, RG( Ω )
Gate Resistance, RG( Ω )
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 10Ω
T C = 25℃
T C = 125℃
Toff
100
Toff
Tf
Tf
20
10
15
20
25
30
Collector Current, Ic (A)
Fig 11. Turn-On Characteristics vs.
Collector Current
©2003 Fairchild Semiconductor Corporation
35
40
10
15
20
25
30
35
40
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
FGA40N60UFD Rev. A
Gate-Emitter Voltage, V GE (V)
Switching Time (uJ)
1000
Eon
100
FGA40N60UFD
15
3000
Eoff
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 10Ω
TC = 25℃
TC = 125℃
Eoff
10
10
15
20
25
30
35
Common Emitter
RL=15 Ω
(Tc=25 ℃)
12
300V
200V
9
Vcc=100V
6
3
0
40
0
30
Collector Current , Ic (A)
60
90
120
Gate Charge, Qg (nC)
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
500
500
IC MAX. (Pulsed)
100
50us
Collector Current, IC [A]
Collector Current, I C [A]
100
100us
IC MAX. (Continuous)
1㎳
10
DC Operation
1
0.1
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.3
10
1
Safe Operating Area
o
VGE =20V, T C=100 C
1
10
100
0.1
1000
1
10
Collector-Emitter Voltage, VCE [V]
100
1000
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
1
Thermal Response, Zthjc [℃/W]
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Pdm
single pulse
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1E-3
10
-5
10
-4
-3
10
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2003 Fairchild Semiconductor Corporation
FGA40N60UFD Rev. A
Reverse Recovery Current, Irr [A]
Forward Current, I F [A]
100
10
1
0
1
2
VR = 200V
IF = 15A
T C = 25℃
T C = 100℃
10
1
100
3
Forward Voltage Drop, VF [V]
1000
di/dt [A/us]
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
800
120
V R = 200V
IF = 15A
T C = 25℃
T C = 100℃
600
Reverce Recovery Time, t rr [ns]
Stored Recovery Charge, Qrr [nC]
FGA40N60UFD
100
T C = 25℃
T C = 100℃
400
200
0
VR = 200V
IF = 15A
TC = 25℃
TC = 100℃
100
80
60
40
20
100
1000
di/dt [A/us]
Fig 20. Stored Charge
©2003 Fairchild Semiconductor Corporation
100
1000
di/dt [A/us]
Fig 21. Reverse Recovery Time
FGA40N60UFD Rev. A
FGA40N60UFD
Package Dimensions
TO-3P
15.60 ±0.20
3.00 ±0.20
3.80 ±0.20
+0.15
1.00 ±0.20
18.70 ±0.20
23.40 ±0.20
19.90 ±0.20
1.50 –0.05
16.50 ±0.30
2.00 ±0.20
9.60 ±0.20
4.80 ±0.20
3.50 ±0.20
13.90 ±0.20
ø3.20 ±0.10
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
©2003 Fairchild Semiconductor Corporation
5.45TYP
[5.45 ±0.30]
0.60 –0.05
FGA40N60UFD Rev. A
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2003 Fairchild Semiconductor Corporation
Rev. I2