xR SiC Series...
5A - 1200V SiC Schottky Diode...
UJ2D1205T...
Features
Positive temperature coefficient for safe operation
and ease of paralleling
1
175°C maximum operating junction temperature
Extremely fast switching not dependent on
temperature
Essentially no reverse or forward recovery
1
Typical Applications
Power converters
Industrial motor drives
Switching-mode power supplies
Power factor correction modules
CASE
2
1
2
Part Number
Package
Marking
UJ2D1205T
TO-220-2
UJ2D1205T
Descriptions
United Silicon Carbide, Inc offers the xR series of high-performance SiC Schottky diodes. With zero reverse
recovery charge and 175°C maximum junction temperature, USCI’s diodes are ideally suited for highfrequency and high-efficiency power systems with minimum cooling requirements.
Absolute Maximum Ratings
Parameter
DC Blocking Voltage
Repetitive Peak Reverse Voltage, Tj=25°C
Maximum DC Forward Current
Symbol
VR
Test Conditions
VRRM
IF
TC = 148°C
Value
1200
Units
V
1200
V
5
A
40
A
TC = 25°C, 8.3ms
Half Sine Pulse
TC = 25°C
83
TC = 148°C
15
Non-Repetitive Forward Surge Current
IFSM
Power Dissipation
PTot
Maximum Junction Temperature
TJ,max
175
°C
Storage Temperature
Soldering Temperatures, Wavesoldering
only allowed at leads
TSTG
-55 to 175
°C
260
°C
Tsold
1.6mm from case
for 10s
Rev 1.00
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xR SiC Series...
5A - 1200V SiC Schottky Diode...
UJ2D1205T...
Electrical Characteristics
TJ = +25°C unless otherwise specified
Parameter
Symbol
Forward Voltage
VF
Reverse Current
IR
Total Capacitive Charge
QC
Total Capacitance
Test Conditions
Value
Typ
1.5
IF = 5A, TJ = 25°C
Min
-
IF = 5A, TJ =175°C
-
2.5
3
VR=1200V, Tj=25°C
-
30
190
VR=1200V, TJ=175°C
-
60
600
C
VR=600V, IF=5A,
di/dt=250A/ms
VR=1V, f=1MHz
260
VR=300V, f=1MHz
28
VR=600V, f=1MHz
20
Units
Max
1.7
V
mA
14
nC
pF
Thermal characteristics
Parameter
symbol
Thermal Resistance
RqJC
Test Conditions
Min
Value
Typ
Units
Max
1.8
°C/W
Typical Performance
10
1.E-04
10-4
9
8
Forward Current, IF (A)
Reverse Current, IR (A)
1.E-05
10-5
10-6
1.E-06
10-7
1.E-07
- 55°C
25°C
10-8
1.E-08
175°C
10-9
1.E-09
500
7
6
5
- 55°C
4
25°C
3
100°C
2
150°C
1
175°C
0
600
700 800 900 1000 1100 1200
Reverse Voltage, VR (V)
Figure 1 Typical reverse characteristics
Rev 1.00
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2
3
4
Forward Voltage, VF (V)
5
Figure 2 Typical forward characteristics
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xR SiC Series...
5A - 1200V SiC Schottky Diode...
UJ2D1205T...
60
D = 0.1
D = 0.3
D = 0.5
D = 0.7
D = 1.0
50
80
Forward Current,IF (A)
Power Disspiation, PTot (W)
100
60
40
20
40
30
20
10
0
0
25
50
75
100
TC (°C)
125
150
175
25
Figure 3 Power dissipation
50
75
100
TC (°C)
125
150
175
Figure 4 Diode forward current
Thermal Impedance, ZqJC (°C/W)
350
Capacitance, C (pF)
300
250
200
150
100
50
0
0.1
1
10
100
Reverse Voltage, VR (V)
1000
D = 0.5
D = 0.3
0.1
Rev 1.00
D = 0.1
D = 0.05
D = 0.02
Single Pulse
0.01
1.E-05
Figure 5 Capacitance vs. reverse voltage
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1.E-04
1.E-03
Time , t (s)
1.E-02
1.E-01
Figure 6 Transient thermal impedance
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xR SiC Series...
5A - 1200V SiC Schottky Diode...
UJ2D1205T...
Mechanical Characteristics
Mounting
Torque
M3/M3.5
Screw
1Nm
8.8 lbf-in
Disclaimer
United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and
technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any
errors or inaccuracies within.
Information on all products and contained herein is intended for description only. No license, express or implied, to any
intellectual property rights is granted within this document.
United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon
Carbide, Inc. products and services described herein.
Rev 1.00
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