10-PZ12NMA027MR-M340F68Y
targat datasheet
1200V/ 30mΩ
flowMNPC 0-SIC
Features
flow0 12mm housing
● Rohm™ Silicon Carbide Power MOSFET
● Rohm™ Silicon Carbide Power Schottky Diode
● MNPC Topology with Splitted Output
● Ultra Low Inductance with Integrated DC-capacitors
● Extremely Fast Switching with No "Tail" Current
● Unsensitivity for Cross Through Conduction
● Solderless Press-fit Mounting Technology
● Temperature sensor
Schematic
Target Applications
● High Efficient Solar Inverter
● UPS
Types
● 10-PZ12NMA027MR-M340F68Y
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
1200
V
40
A
240
A
85
W
T1, T4 H-bridge MOSFET
Drain-source break down voltage
DC drain current
Pulsed drain current
VDSS
ID
IDpulse
Tj=Tjmax
Th=80°C
tp limited by Tjmax
Power dissipation
Ptot
Gate-source peak voltage
VGS
-6 / 22
V
Tjmax
150
°C
VRRM
650
V
28
A
120
A
63
W
175
°C
Maximum Junction Temperature
Tj=Tjmax
Th=80°C
D7, D8 Neutral Point FWD
Peak Repetitive Reverse Voltage
DC forward current
IF
Tj=Tjmax
Repetitive peak forward current
IFRM
tp limited by Tjmax
Power dissipation per Diode
Ptot
Tj=Tjmax
Maximum Junction Temperature
copyright by Vincotech
Tjmax
1
Th=80°C
Th=80°C
Revision: 1
10-PZ12NMA027MR-M340F68Y
targat datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
650
V
50
A
240
A
76
W
±20
V
none
µs
V
160
A
T2, T3 Neutral Point IGBT
Collector-emitter break down voltage
DC collector current
VCE
IC
Tj=Tjmax
Th=80°C
Repetitive peak collector current
ICpuls
tp limited by Tjmax
Power dissipation per IGBT
Ptot
Tj=Tjmax
Gate-emitter peak voltage
VGE
Short circuit ratings
tSC
Tj≤150°C
VCC
VGE=15V
Th=80°C
Tj≤150°C
Reverse Bias Safe Operation Area
Icmax
Maximum Junction Temperature
Tjmax
175
°C
VRRM
650
V
11
A
12
A
21
W
Tjmax
175
°C
VRRM
1200
V
14
A
46
A
38
W
175
°C
500
V
VCEmax=650V
D2,D3 Neutral Point IGBT Inverse Diode
Peak Repetitive Reverse Voltage
DC forward current
IF
Tj=Tjmax
Th=80°C
Repetitive peak forward current
IFRM
tp limited by Tjmax
Power dissipation per Diode
Ptot
Tj=Tjmax
Maximum Junction Temperature
Th=80°C
D5, D6 H-bridge FWD
Peak Repetitive Reverse Voltage
DC forward current
IF
Th=80°C
Tj=Tjmax
Repetitive peak forward current
IFRM
tp limited by Tjmax
Power dissipation per Diode
Ptot
Tj=Tjmax
Maximum Junction Temperature
Th=80°C
Tjmax
DC link Capacitor
Max.DC voltage
VMAX
Tc=25°C
Thermal Properties
Storage temperature
Tstg
-40…+125
°C
Operation temperature under switching condition
Top
-40…+(Tjmax - 25)
°C
4000
V
Insulation Properties
Insulation voltage
Vis
Comparative tracking index
CTI
copyright by Vincotech
t=2s
DC voltage
>200
2
Revision: 1
10-PZ12NMA027MR-M340F68Y
targat datasheet
Characteristic Values
Parameter
Conditions
Symbol
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
Value
IC [A] or
IF [A] or
ID [A]
Tj
Min
Typ
Unit
Max
T1, T4 H-bridge MOSFET
Drain-source on-state resistance
Rds(on)
VCE=VGE
Gate threshold voltage
V(GS)th
VDS=VGS
18
30
0,0132
Gate to Source Leackage Current
IGSS+
IGSS-
-6/22
0
Zero Gate Voltage Drain Current
IDSS
0
1200
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
tr
td(off)
tf
Turn-on energy loss per pulse
Eon
Turn-off energy loss per pulse
Eoff
Total gate charge *
Qg
Gate to source charge
Qgs
Rgoff=tbd Ω
Rgon=tbd Ω
18
400
30
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
27,00
42,00
1,6
300
30
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
nC
93
6240
Output capacitance
Coss
Reverse transfer capacitance
Crss
Internal Gate Resistance
RG
RthJH
mWs
nC
Qgd
Thermal resistance chip to heatsink per chip
ns
nC
Cies
800
µA
81
Input capacitance *
0
V
nA
318
Gate to drain charge
f=1MHz
mΩ
4
pF
Tj=25°C
231
Tj=25°C
2,1
Ω
0,8
K/W
48
f=1MHz
UAC=25mV
Preaplied Phase
change material
D7, D8 Neutral Point FWD
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
VF
IRRM
trr
Qrr
Rgon=tbdΩ
di(rec)max
/dt
Reverse recovered energy
Erec
Thermal resistance chip to heatsink per chip
RthJH
copyright by Vincotech
30
Preaplied Phase
change material
Tj=25°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,40
1,60
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
1,50
3
V
A
ns
µC
A/µs
mWs
K/W
Revision: 1
10-PZ12NMA027MR-M340F68Y
targat datasheet
Characteristic Values
Parameter
Conditions
Symbol
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
Value
IC [A] or
IF [A] or
ID [A]
Unit
Tj
Min
Typ
Max
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=175°C
Tj=25°C
Tj=125°C
3,3
4,0
4,7
1,65
2,22
T2, T3 Neutral Point IGBT
Gate emitter threshold voltage
VGE(th)
VCE=VGE
0,0008
Collector-emitter saturation voltage
VCE(sat)
15
Collector-emitter cut-off incl diode
ICES
0
650
Gate-emitter leakage current
IGES
20
0
Integrated Gate resistor
Rgint
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
80
tf
Turn-on energy loss per pulse
Eon
Turn-off energy loss per pulse
Eoff
Input capacitance
Cies
Output capacitance
Coss
Reverse transfer capacitance
Crss
Gate charge
QGate
Thermal resistance chip to heatsink per chip
RthJH
240
none
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
tr
td(off)
0,08
Rgoff=tbdΩ
Rgon=tbdΩ
V
V
mA
nA
Ω
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
ns
mWs
5000
f=1MHz
0
25
15
520
Tj=25°C
80
Tj=25°C
190
nC
1,25
K/W
pF
18
80
Preaplied Phase
change material
D2,D3 Neutral Point IGBT Inverse Diode
Diode forward voltage
Thermal resistance chip to heatsink per chip
VF
RthJH
6
Tj=25°C
Tj=125°C
1,23
Preaplied Phase
change material
1,55
1,50
2,1
V
K/W
3,70
D5, D6 H-bridge FWD
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
VF
Ir
1200
IRRM
Reverse recovery time
trr
Reverse recovered charge
Qrr
Peak rate of fall of recovery current
10
Rgon=tbd Ω
di(rec)max
/dt
Reverse recovery energy
Erec
Thermal resistance chip to heatsink per chip
RthJH
Tj=25°C
Tj=150°C
Tj=25°C
Tj=175°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1
1,49
1,77
1,9
250
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
Preaplied Phase
change material
V
µA
A
ns
µC
A/µs
mWs
2,50
K/W
270
nF
22000
Ω
DC link Capacitor
C value
C
Thermistor
Rated resistance
R
Deviation of R100
∆R/R
Power dissipation
P
T=25°C
R100=1486 Ω
T=25°C
Power dissipation constant
-5
+5
%
T=25°C
200
mW
Tj=25°C
2
mW/K
B-value
B(25/50)
Tol. ±3%
Tj=25°C
3950
K
B-value
B(25/100)
Tol. ±3%
Tj=25°C
3996
K
Vincotech NTC Reference
copyright by Vincotech
B
4
Revision: 1
10-PZ12NMA027MR-M340F68Y
targat datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
without thermal paste 12mm housing
Ordering Code
10-PZ12NMA027MR-M340F68Y
in DataMatrix as
M340F68Y
in packaging barcode as
M340F68Y
Outline
Pinout
copyright by Vincotech
5
Revision: 1
10-PZ12NMA027MR-M340F68Y
targat datasheet
PRODUCT STATUS DEFINITIONS
Datasheet Status
Target
Product Status
Definition
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in any
manner without notice. The data contained is exclusively
intended for technically trained staff.
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright by Vincotech
6
Revision: 1