10-PZ12B2A040MR01-M330L68Y Maximum Ratings

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10-PZ12B2A040MR01-M330L68Y
target datasheet
flowBOOST 0 SiC
1200V/ 40mΩ
Features
flowBOOST 0 SiC
TM
● Rohm SiC-Power MOSFET´s and Schottky Diodes
● Dual Boost Topology
● Ultra Low Inductance with Integrated DC-capacitors
● Extremely Fast Switching with No "Tail" Current
● Solderless Press-fit Mounting Technology
● Temperature sensor
Schematic
Target Applications
● Solar Inverter
● Power Supply
Types
● 10-PZ12B2A040MR01-M330L68Y
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
1200
V
30
A
160
A
58
W
T1, T3 Boost MOSFET
Drain to source breakdown voltage
DC drain current
Pulsed drain current
VDS
ID
IDpulse
Tj=Tjmax
Th=80°C
tp limited by Tjmax
Ptot
Gate-source peak voltage
VGS
-6 / 22
V
Tjmax
150
°C
VRRM
1200
V
33
A
96
A
80
W
175
°C
Maximum Junction Temperature
Tj=Tjmax
Th=80°C
Power dissipation
D2, D4 Boost Diode
Peak Repetitive Reverse Voltage
DC forward current
IF
Tj=Tjmax
Repetitive peak forward current
IFRM
tp limited by Tjmax
Power dissipation per Diode
Ptot
Tj=Tjmax
Maximum Junction Temperature
copyright Vincotech
Tjmax
1
Th=80°C
Th=80°C
Revision: 1
10-PZ12B2A040MR01-M330L68Y
target datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
1600
V
30
A
370
A
39
W
Tjmax
150
°C
VMAX
1000
V
Storage temperature
Tstg
-40…+125
°C
Operation temperature under switching condition
Top
-40…+(Tjmax - 25)
°C
4000
V
D1,D3 Protection diode
VRRM
Tc=25°C
IF
Tj=Tjmax
Surge forward current
IFSM
tp=10ms
Power dissipation per Diode
Ptot
Tj=Tjmax
Peak Repetitive Reverse Voltage
DC forward current
Maximum Junction Temperature
Th=80°C
Th=80°C
C1, C2
Max.DC voltage
Thermal Properties
Insulation Properties
Insulation voltage
Vis
Comparative tracking index
CTI
copyright Vincotech
t=2s
DC voltage
>200
2
Revision: 1
10-PZ12B2A040MR01-M330L68Y
target datasheet
Characteristic Values
Parameter
Conditions
Symbol
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
Value
IC [A] or
IF [A] or
ID [A]
Tj
Min
Typ
Unit
Max
T1, T3 Boost MOSFET
Static drain to source ON resistance
Rds(on)
Gate threshold voltage
V(GS)th
18
20
VDS=VGS
0,0088
Gate to Source Leakage Current
Igss
-6/22
0
Zero Gate Voltage Drain Current
Idss
0
1200
Turn On Delay Time
Rise Time
Turn off delay time
Fall time
td(ON)
tr
td(OFF)
tf
Turn-on energy loss per pulse
Eon
Turn-off energy loss per pulse
Eoff
Total gate charge
Qg
Gate to source charge
Qgs
Rgoff=tbd Ω
Rgon=tbd Ω
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
40
62,5
1,6
200
0,8
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
20
Tj=25°C
µA
ns
mWs
54
Qgd
62
Input capacitance
Ciss
3700
Output capacitance
Coss
Reverse transfer capacitance
Crss
Internal Gate Resistance
RG
RthJH
V
nA
212
400
18
Gate to drain charge
Thermal resistance chip to heatsink per chip
mΩ
4
f=100kHz
0
1000
Tj=25°C
nC
350
pF
40
f=1MHz
UAC=25mV
3,15
Ω
Preapplied
Phase change
material
1,20
K/W
D2, D4 Boost Diode
Diode forward voltage
VF
Reverse leakage current
IRM
Reverse recovery time
trr
Reverse recovered charge
Peak rate of fall of recovery current
20
1200
Qrr
di(rec)max
/dt
Reverse recovery energy
Erec
Thermal resistance chip to heatsink per chip
RthJH
Rgon=tbd Ω
Preapplied
Phase change
material
Tj=25°C
Tj=150°C
Tj=25°C
Tj=175°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
1,5
1,9
20
240
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
V
400
A
ns
µC
A/µs
mWs
K/W
1,15
D1,D3 Protection diode
Diode forward voltage
Thermal resistance chip to heatsink per chip
copyright Vincotech
VF
RthJH
13
Preapplied
Phase change
material
Tj=25°C
Tj=125°C
1
0,9
1,8
3
1,21
1,1
V
K/W
Revision: 1
10-PZ12B2A040MR01-M330L68Y
target datasheet
Characteristic Values
Parameter
Conditions
Symbol
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
Value
IC [A] or
IF [A] or
ID [A]
Tj
Min
Typ
Unit
Max
C1, C2
C
100
nF
Rated resistance
R
22000
Ω
Deviation of R100
∆R/R
C value
Thermistor
R100
R100=1486 Ω
Tj=25°C
P
Power dissipation constant
-5
5
%
Tc=100°C
200
mW
Tc=100°C
2
mW/K
A-value
B(25/50)
Tol. ±3%
Tj=25°C
3950
K
B-value
B(25/100)
Tol. ±3%
Tj=25°C
3996
K
Vincotech NTC Reference
copyright Vincotech
Tj=25°C
4
B
Revision: 1
10-PZ12B2A040MR01-M330L68Y
target datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
w/o thermal paste 12mm housing Press-fit pin
Ordering Code
10-PZ12B2A040MR01-M330L68Y
in DataMatrix as
M330L68Y
in packaging barcode as
M330L68Y
Outline
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Pin table
X
0
3
6
8,5
18,5
21
28,5
31,5
33,2
33,2
33,2
33,2
31,5
28,5
21
18,5
8,5
6
3
0
0
0
Y
Function
22,2
22,2
22,2
22,2
22,2
22,2
22,2
22,2
19,2
16,7
5,5
3
0
0
0
0
0
0
0
0
9,6
12,6
S1
G1
DCDCDC+
DC+
NC
NC
IN1
IN1
IN2
IN2
NC
NC
DC+
DC+
DCDCG3
S3
Th1
Th2
Pinout
copyright Vincotech
5
Revision: 1
10-PZ12B2A040MR01-M330L68Y
target datasheet
PRODUCT STATUS DEFINITIONS
Datasheet Status
Target
Product Status
Definition
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in any
manner without notice. The data contained is exclusively
intended for technically trained staff.
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
6
Revision: 1
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