LT1055/LT1056 Precision, High Speed, JFET Input Operational

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LT1055/LT1056
Precision, High Speed,
JFET Input Operational Amplifiers
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DESCRIPTIO
FEATURES
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The LT®1055/LT1056 JFET input operational amplifiers
combine precision specifications with high speed performance.
Guaranteed Offset Voltage: 150µV Max
–55°C to 125°C: 500µV Max
Guaranteed Drift: 4µV/°C Max
Guaranteed Bias Current
70°C: 150pA Max
125°C: 2.5nA Max
Guaranteed Slew Rate: 12V/µs Min
For the first time, 16V/µs slew rate and 6.5MHz gain
bandwidth product are simultaneously achieved with offset voltage of typically 50µV, 1.2µV/°C drift, bias currents
of 40pA at 70°C and 500pA at 125°C.
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APPLICATIO S
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The 150µV maximum offset voltage specification is the
best available on any JFET input operational amplifier.
Precision, High Speed Instrumentation
Logarithmic Amplifiers
D/A Output Amplifiers
Photodiode Amplifiers
Voltage-to-Frequency Converters
Frequency-to-Voltage Converters
Fast, Precision Sample-and-Hold
The LT1055 and LT1056 are differentiated by their operating currents. The lower power dissipation LT1055 achieves
lower bias and offset currents and offset voltage. The
additional power dissipation of the LT1056 permits higher
slew rate, bandwidth and faster settling time with a slight
sacrifice in DC performance.
The voltage-to-frequency converter shown below is one of
the many applications which utilize both the precision and
high speed of the LT1055/LT1056.
For a JFET input op amp with 23V/µs guaranteed slew rate,
refer to the LT1022 data sheet.
, LTC and LT are registered trademarks of Linear Technology Corporation.
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TYPICAL APPLICATIO
0kHz to 10kHz Voltage-to-Frequency Converter
4.7k
Distribution of Input Offset Voltage
(H Package)
3M
15V
140
0.001 (POLYSTYRENE)
0V TO 10V
INPUT
10kHZ
TRIM
5k
2
0.1µF
22k
15V
7
+
6
LT1056
3
–
1.5k
OUTPUT
1Hz TO 10kHz
0.005%
LINEARITY
4
–15V
33pF
3.3M
–15V
50% TO ±60µV
100
80
60
40
20
0.1µF
= 1N4148
VS = ±15V
TA = 25°C
634 UNITS TESTED
FROM THREE RUNS
LM329
2N3906
*1% FILM
NUMBER OF UNITS
120
THE LOW OFFSET VOLTAGE OF LT1056
CONTRIBUTES ONLY 0.1Hz OF ERROR
WHILE ITS HIGH SLEW RATE PERMITS
10kHz OPERATION.
0
–400
200
–200
400
0
INPUT OFFSET VOLTAGE (µV)
LT1055/56 TA02
LT1055/56 TA01
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LT1055/LT1056
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ABSOLUTE MAXIMUM RATINGS
(Note 1)
Supply Voltage ...................................................... ±20V
Differential Input Voltage ....................................... ±40V
Input Voltage ......................................................... ±20V
Output Short-Circuit Duration .......................... Indefinite
Operating Temperature Range
LT1055AM/LT1055M/LT1056AM/
LT1056M (OBSOLETE) .............. –55°C to 125°C
LT1055AC/LT1055C/LT1056AC/
LT1056C ................................................ 0°C to 70°C
Storage Temperature Range
All Devices ...................................... – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
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PACKAGE/ORDER INFORMATION
ORDER PART
NUMBER
TOP VIEW
BAL 1
8
N/C
–IN 2
7
V+
+IN 3
6
OUT
V– 4
5
BAL
LT1055CN8
LT1056CN8
BAL 1
8
N/C
–IN 2
7
V+
+IN 3
6
OUT
V– 4
5
BAL
S8 PACKAGE
8-LEAD PLASTIC SO
TJMAX = 150°C, θJA = 130°C/ W
TJMAX = 150°C, θJA = 150°C/ W
1055
1056
ORDER PART
NUMBER
TOP VIEW
NC
8
–IN 2
LT1055S8
LT1056S8
S8 PART
MARKING
N8 PACKAGE
8-LEAD PDIP
BALANCE 1
ORDER PART
NUMBER
TOP VIEW
7
V+
LT1055ACH
LT1055CH
LT1055AMH
LT1055MH
6 OUT
5 BALANCE
4
V–
H PACKAGE
8-LEAD TO-5 METAL CAN
+IN 3
LT1056ACH
LT1056CH
LT1056AMH
LT1056MH
OBSOLETE PACKAGE
TJMAX = 150°C, θJA = 150°C/ W, θJC = 45°C/ W
Consider the N8 Package for Alternate Source
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
TA = 25°C. VS = ±15V, VCM = 0V unless otherwise noted.
LT1055AM/LT1056AM
LT1055AC/LT1056AC
MIN
TYP
MAX
LT1055M/LT1056M
LT1055CH/LT1056CH
LT1055CN8/LT1056CN8
MIN
TYP
MAX
SYMBOL PARAMETER
CONDITIONS
VOS
Input Offset Voltage (Note 2)
LT1055 H Package
LT1056 H Package
LT1055 N8 Package
LT1056 N8 Package
—
—
—
—
50
50
—
—
150
180
—
—
—
—
—
—
70
70
120
140
400
450
700
800
UNITS
µV
µV
µV
µV
IOS
Input Offset Current
Fully Warmed Up
—
2
10
—
2
20
pA
IB
Input Bias Current
Fully Warmed Up
VCM = 10V
—
—
±10
30
±50
130
—
—
±10
30
±50
150
pA
pA
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LT1055/LT1056
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
TA = 25°C. VS = ±15V, VCM = 0V unless otherwise noted.
CONDITIONS
Input Resistance:Differential
Common Mode VCM = –11V to 8V
VCM = 8V to 11V
Input Capacitance
en
LT1055
LT1056
LT1055AM/LT1056AM
LT1055AC/LT1056AC
MIN
TYP
MAX
LT1055M/LT1056M
LT1055CH/LT1056CH
LT1055CN8/LT1056CN8
MIN
TYP
MAX
1012
UNITS
—
—
—
—
1012
1011
4
—
—
—
—
—
—
—
—
1012
1012
1011
4
—
—
—
—
Ω
Ω
Ω
pF
—
—
1.8
2.5
—
—
—
—
2.0
2.8
—
—
µVP-P
µVP-P
—
—
28
14
50
20
—
—
30
15
60
22
nV/√Hz
nV/√Hz
Input Noise Voltage
0.1Hz to 10Hz
Input Noise Voltage Density
f0 = 10Hz (Note 3)
f0 = 1kHz (Note 4)
In
Input Noise Current Density
f0 = 10Hz, 1kHz (Note 5)
—
1.8
4
—
1.8
4
fA/√Hz
AVOL
Large-Signal Voltage Gain
V0 = ±10V
150
130
400
300
—
—
120
100
400
300
—
—
V/mV
V/mV
RL = 2k
RL = 1k
±11
±12
—
±11
±12
—
V
CMRR
Common Mode Rejection Ratio
VCM = ±11V
86
100
—
83
98
—
dB
PSRR
Power Supply Rejection Ratio
VS = ±10V to ±18V
90
106
—
88
104
—
dB
VOUT
Output Voltage Swing
RL = 2k
SR
Slew Rate
GBW
Gain Bandwidth Product
IS
Supply Current
Input Voltage Range
f = 1MHz
±12
±13.2
—
±12
±13.2
—
V
LT1055
LT1056
10
12
13
16
—
—
7.5
9.0
12
14
—
—
V/µs
V/µs
LT1055
LT1056
—
—
5.0
6.5
—
—
—
—
4.5
5.5
—
—
MHz
MHz
LT1055
LT1056
—
—
2.8
5.0
4.0
6.5
—
—
2.8
5.0
4.0
7.0
mA
mA
—
±5
—
—
±5
—
mV
Offset Voltage Adjustment Range RPOT = 100k
The ● denotes the specifications which apply over the temperature range 0°C ≤ TA ≤ 70°C.
VS = ±15V, VCM = 0V unless otherwise noted.
MIN
LT1055AC
LT1056AC
TYP
MAX
LT1055CH/LT1056CH
LT1055CN8/LT1056CN8
MIN
TYP
MAX
SYMBOL PARAMETER
CONDITIONS
UNITS
VOS
Input Offset Voltage (Note 2)
LT1055 H Package
LT1056 H Package
LT1055 N8 Package
LT1056 N8 Package
●
●
●
●
—
—
—
—
100
100
—
—
330
360
—
—
—
—
—
—
140
140
250
280
750
800
1250
1350
µV
µV
µV
µV
Average Temperature
Coefficient of Input Offset
Voltage
H Package (Note 6)
N8 Package (Note 6)
●
●
—
—
1.2
—
4.0
—
—
—
1.6
3.0
8.0
12.0
µV/°C
µV/°C
IOS
Input Offset Current
Warmed Up
TA = 70°C
LT1055
LT1056
●
●
—
—
10
14
50
70
—
—
16
18
80
100
pA
pA
IB
Input Bias Current
Warmed Up
TA = 70°C
LT1055
LT1056
●
●
—
—
±30
±40
±150
±80
—
—
±40
±50
±200
±240
pA
pA
AVOL
Large-Signal Voltage Gain
VO = ±10V, RL = 2k
●
80
250
—
60
250
—
V/mV
CMRR
Common Mode Rejection Ratio
VCM = ±10.5V
●
85
100
—
82
98
—
dB
PSRR
Power Supply Rejection Ratio
VS = ±10V to ±18V
●
89
105
—
87
103
—
dB
VOUT
Output Voltage Swing
RL = 2k
●
±12
±13.1
—
±12
±13.1
—
V
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LT1055/LT1056
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the temperature range
–55°C ≤ TA ≤ 125°C. VS = ±15V, VCM = 0V, unless otherwise noted.
SYMBOL PARAMETER
VOS
MIN
LT1055AM
LT1056AM
TYP
MAX
●
●
—
—
180
180
●
—
CONDITIONS
Input Offset Voltage (Note 2)
LT1055
LT1056
MIN
LT1055M
LT1056M
TYP
MAX
UNITS
500
550
—
—
250
250
1200
1250
µV
µV
1.3
4.0
—
1.8
8.0
µV/°C
Average Temperature
Coefficient of Input Offset
Voltage
(Note 6)
IOS
Input Offset Current
Warmed Up
TA = 125°C
LT1055
LT1056
●
●
—
—
0.20
0.25
1.2
1.5
—
—
0.25
0.30
1.8
2.4
nA
nA
IB
Input Bias Current
Warmed Up
TA = 125°C
LT1055
LT1056
●
●
—
—
±0.4
±0.5
±2.5
±3.0
—
—
±0.5
±0.6
±4.0
±5.0
nA
nA
AVOL
Large-Signal Voltage Gain
VO = ±10V, RL = 2k
●
40
120
—
35
120
—
CMRR
Common Mode Rejection Ratio
VCM = ±10.5V
●
85
100
—
82
98
—
dB
PSRR
Power Supply Rejection Ratio
VS = ±10V to ±17V
●
88
104
—
86
102
—
dB
VOUT
Output Voltage Swing
RL = 2k
●
±12
±12.9
—
±12
±12.9
—
V
V/mV
TA = 25°C. VS = ±15V, VCM = 0V unless otherwise noted.
SYMBOL PARAMETER
VOS
Input Offset Voltage (Note 2)
IOS
Input Offset Current
IB
Input Bias Current
Input Resistance
LT1055CS8/LT1056CS8
MIN
TYP
MAX
CONDITIONS
Differential
Common Mode
1500
µV
Fully Warmed Up
5
30
pA
Fully Warmed Up
VCM = 10V
±30
30
±100
150
pA
pA
VCM = –11V to 8V
VCM = 8V to 11V
0.4
0.4
0.05
TΩ
TΩ
TΩ
4
pF
Input Capacitance
en
UNITS
500
Input Noise Voltage
0.1Hz to 10Hz
LT1055
LT1056
Input Noise Voltage Density
fO = 10Hz (Note 4)
fO = 1kHz (Note 4)
in
Input Noise Current Density
fO = 10Hz, 1kHz (Note 5)
AVOL
Large-Signal Voltage Gain
VO = ±10V
RL = 2k
RL = 1k
Input Voltage Range
µVP-P
µVP-P
2.5
3.5
35
15
70
22
nV/√Hz
nV/√Hz
2.5
10
fA/√Hz
120
100
400
300
V/mV
V/mV
±11
±12
V
CMRR
Common Mode Rejection Ratio
VCM = ±11V
83
98
dB
PSRR
Power Supply Rejection Ratio
VS = ±10V to ±18V
88
104
dB
VOUT
Output Voltage Swing
RL = 2K
±12
±13.2
V
SR
Slew Rate
7.5
9.0
12
14
V/µs
V/µs
GBW
Gain Bandwidth Product
LT1055
LT1056
4.5
5.5
MHz
MHz
IS
Supply Current
LT1055
LT1056
2.8
5.0
Offset Voltage Adjustment Range
LT1055
LT1056
f = 1MHz
RPOT = 100k
±5
4.0
7.0
mA
mA
mV
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LT1055/LT1056
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the temperature range
0°C ≤ TA ≤ 70°C. VS = ±15V, VCM = 0V, unless otherwise noted.
SYMBOL PARAMETER
VOS
LT1055CS8/LT1056CS8
MIN
TYP
MAX
CONDITIONS
UNITS
µV
Input Offset Voltage (Note 2)
●
800
2200
Average Temperature Coefficient of Input Offset Voltage
●
4
15
µV/°C
18
150
pA
±60
±400
IOS
Input Offset Current
Warmed Up, TA = 70°C
●
IB
Input Bias Current
Warmed Up, TA = 70°C
●
AVOL
Large-Signal Voltage Gain
VO = ±10V, RL = 2k
●
60
250
V/mV
CMRR
Common Mode Rejection Ratio
VCM = ±10.5V
●
82
98
dB
pA
PSRR
Power Supply Rejection Ratio
VS = ±10V to ±18V
●
87
103
dB
VOUT
Output Voltage Swing
RL = 2K
●
±12
±13.1
V
For MIL-STD components, please refer to LTC883 data sheet for test
listing and parameters.
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: Offset voltage is measured under two different conditions:
(a) approximately 0.5 seconds after application of power; (b) at TA = 25°C
only, with the chip heated to approximately 38°C for the LT1055 and to
45°C for the LT1056, to account for chip temperature rise when the device
is fully warmed up.
Note 3: 10Hz noise voltage density is sample tested on every lot of A
grades. Devices 100% tested at 10Hz are available on request.
Note 4: This parameter is tested on a sample basis only.
Note 5: Current noise is calculated from the formula: in = (2qlB)1/2, where
q = 1.6 • 10 –19 coulomb. The noise of source resistors up to 1GΩ swamps
the contribution of current noise.
Note 6: Offset voltage drift with temperature is practically unchanged
when the offset voltage is trimmed to zero with a 100k potentiometer
between the balance terminals and the wiper tied to V+. Devices tested to
tighter drift specifications are available on request.
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LT1055/LT1056
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TYPICAL PERFORMANCE CHARACTERISTICS
Input Bias Current Over the
Common Mode Range
BIAS OR OFFSET CURRENTS
MAY BE POSITIVE OR NEGATIVE
100
BIAS CURRENT
30
10
OFFSET CURRENT
3
0
25
75
100
50
AMBIENT TEMPERATURE (°C)
125
1200
VS = ±15V
WARMED UP
800
80
TA = 125°C
TA = 70°C
40
TA = 25°C
0
A
0
–400
–40
TA = 70°C
–80
TA = 125°C
–800
B
A = POSITIVE INPUT CURRENT
B = NEGATIVE INPUT CURRENT
B
–120
–15
–5
0
5
10
–10
COMMON MODE INPUT VOLTAGE (V)
LT1055/56 G01
BATTERY VOLTAGE (V)
120
50% TO
±1.5µV/°C
100
80
60
40
20
50% YIELD
TO ±140µV
80
60
40
20
–1200
0
–800 –600 –400 –200 0 200 400 600 800
INPUT OFFSET VOLTAGE (µV)
15
LT1055/56 G03
Long Term Drift of
Representative Units
Warm-Up Drift
100
50
VS = ±15V
TA = 25°C
CHANGE IN OFFSET VOLTAGE (µV)
VS = ±15V
634 UNITS TESTED
FROM THREE RUNS
VS = ±15V
TA = 25°C
550 UNITS
TESTED FROM
120 TWO RUNS
(LT1056)
100
140
LT1055/56 G02
Distribution of Offset Voltage Drift
with Temperature (H Package)*
140
400
A
160
NUMBER OF INPUTS
300
120
80
60
LT1056CN8
40
LT1055CN8
LT1056 H PACKAGE
20
LT1055 H PACKAGE
0
0
4 6 8 10
–10 –8 –6 –4 –2 0 2
OFFSET VOLTAGE DRIFT WITH TEMPERATURE (µV/°C)
VS = ±15V
TA = 25°C
40
OFFSET VOLTAGE CHANGE µV)
VS = ±15V
VCM = 0V
WARMED UP
Distribution of Input Offset
Voltage (N8 Package)
INPUT BIAS CURRENT, TA = 125°C (pA)
INPUT BIAS AND OFFSET CURRENT (pA)
1000
INPUT BIAS CURRENT, TA = 25°C, TA = 70°C (pA)
Input Bias and Offset Currents
vs Temperature
30
20
10
0
–10
–20
–30
–40
–50
1
3
4
2
TIME AFTER POWER ON (MINUTES)
0
5
1
0
3
2
TIME (MONTHS)
4
LT1055/56 G05
*DISTRIBUTION IN THE PLASTIC (N8) PACKAGE
IS SIGNIFICANTLY WIDER.
5
LT1055/56 GO6
LT1055/56 G04
LT1056
LT1055
0
2
6
4
TIME (SECONDS)
8
10
LT1055/56 GO7
Voltage Noise vs Frequency
100
7
70
PEAK-TO-PEAK
NOISE
5
50
3
30
f0 = 10kHz
2
20
f0 = 1kHz
1
10
20
30
50
60
40
CHIP TEMPERATURE (°C)
70
10
80
LT1055/56 G08
1000
RMS NOISE VOLTAGE DENSITY (nV/√Hz)
0.1Hz TO 10Hz PEAK-TO-PEAK NOISE (µV/P-P)
Noise vs Chip Temperature
10
RMS NOISE VOLTAGE DENSITY (nV/√Hz)
NOISE VOLTAGE (1µV/DIVISION)
0.1Hz to 10Hz Noise
VS = ±15V
TA = 25°C
300
100
LT1056
1/f CORNER = 28HZ
30
LT1055
1/f CORNER
= 20HZ
10
1
3
10
100
30
FREQUENCY (Hz)
300
1000
LT1055/56 G09
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LT1055/LT1056
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TYPICAL PERFORMANCE CHARACTERISTICS
LT1055 Large-Signal Response
20mV/DIV
5V/DIV
Small-Signal Response
5V/DIV
LT1056 Large-Signal Response
AV = 1, CL = 100pF, 0.5µs/DIV
AV = 1, CL = 100pF, 0.5µs/DIV
LT1055/56 G10
LT1055/56 G12
AV = 1, CL = 100pF, 0.2µs/DIV
LT1055/56 G11
Undistorted Output Swing vs
Frequency
Output Impedence vs Frequency
10
LT1056 GBW
SLEW RATE (V/µS)
24
18
LT1056
12
LT1055 GBW
20
6
4
LT1056 SLEW
10
2
LT1055 SLEW
6
VS = ±15V
f0 = 1MHz FOR GBW
0
0
0.1
1
FREQUENCY (MHz)
–25
10
LT1055/56 G13
20
GAIN (dB)
GAIN (dB)
LT1056
LT1056
Voltage Gain vs Temperature
120
GAIN
140
LT1055
LT1056
0
20
–10
10
100
1k 10k 100k 1M 10M 100M
FREQUENCY (Hz)
LT1055/56 G16
1000
1
VS = ±15V
VO = ±10V
300
RL = 1k
100
30
160
VS = ±15V
TA = 25°C
0
1000
LT1055/56 G15
10
40
1
10
100
FREQUENCY (kHz)
1
PHASE SHIFT (DEGREES)
60
LT1056
AV = 1
PHASE
LT1055
80
LT1055
RL = 2k
100
–20
1
LT1056
0.1
100
LT1055
AV = 10
LT1055
Gain, Phase Shift vs Frequency
VS = ±15V
TA = 25°C
120
LT1056
LT1055/56 G14
Gain vs Frequency
140
AV = 100
LT1055
125
25
75
TEMPERATURE (˚C)
VS = ±15V
TA = 25°C
10
VOLTAGE GAIN (V/mV)
LT1055
8
GAIN BANDWIDTH PRODUCT (MHz)
VS = ±15V
TA = 25°C
100
OUTPUT IMPEDANCE (Ω)
30
30
PEAK-TO-PEAK OUTPUT SWING (V)
Slew Rate, Gain Bandwidth vs
Temperature
4
2
FREQUENCY (MHz)
6
8 10
LT1055/56 G17
10
–75
25
–25
75
TEMPERATURE (°C)
125
LT1055/56 G18
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LT1055/LT1056
U W
TYPICAL PERFORMANCE CHARACTERISTICS
LT1055 Settling Time
10
0.5mV
5mV
1mV
0
5mV 2mV
–5
10mV
1mV 0.5mV
VS = ±15V
TA = 25°C
10mV
1
2
0.5mV
5mV
1mV
5mV
–5
10mV
3
0.5mV
2mV 1mV
1
0
2
120
100
60
40
20
90
0
125
10
100
1k
10k 100k
FREQUENCY (Hz)
1M
LT1055/56 G22
25°C
4
TA = 125°C
LT1055
25°C
2
TA = – 55°C
TA = 125°C
±10
±15
±5
SUPPLY VOLTAGE (V)
±20
LT1055/56 G25
40
20
100
100k
10k
1k
FREQUENCY (Hz)
50
TA = –25°C
TA = –125°C
VS = ±15V
–3
TA = –25°C
–9
–15
0.1
TA = – 55°C
40
0
–6
10M
LT1055/56 G24
TA = –55°C
6
3
1M
Short-Circuit Current vs Time
9
–12
0
NEGATIVE
SUPPLY
60
10
SHORT-CIRCUIT CURRENT (mA)
OUTPUT VOLTAGE SWING (V)
SUPPLY CURRENT (mA)
12
TA = – 55°C
POSITIVE
SUPPLY
80
0
10M
15
LT1056
100
Output Swing vs Load Resistance
8
6
TA = 25°C
120
LT1055/56 G23
Supply Current vs Supply Voltage
0
LT1055/56 G21
140
80
CMRR (dB)
CMRR, PSRR (dB)
110
100
Power Supply Rejection Ratio vs
Frequency
VS = ±15V
TA = 25°C
100
25
75
TEMPERATURE (˚C)
–12
Common Mode Rejection Ratio
vs Frequency
VS = ±10V TO ±17V FOR PSRR
VS = ±15V, VCM = ±10.5V FOR CMRR
–25
≈
–11
LT1055/56 G20
Common Mode and Power Supply
Rejections vs Temperature
CMRR
≈
±10
–14
VS = ±15V
–15
50
–50
0
TEMPERATURE (°C)
3
LT1055/56 G19
PSRR
12
11
–13
SETTLING TIME (µS)
SETTLING TIME (µS)
120
13
VS = ±15V
TA = 25°C
0
–10
0
2mV
5
POWER SUPPLY REJECTION RATIO (dB)
10mV
5
15
14
BATTERY VOLTAGE (V)
2mV
OUTPUT VOLTAGE SWING FROM 0V (V)
OUTPUT VOLTAGE SWING FROM 0V (V)
10
–10
Common Mode Range vs
Temperature
LT1056 Settling Time
TA = –125°C
TA = –55°C
TA = 25°C
30
TA = 125°C
20
10
VS = ±15V
0
–10
SINKING
–20
TA = 125°C
–30
TA = 25°C
–40
TA = – 55°C
–50
0.3
1
3
LOAD RESISTANCE (kΩ)
10
LT1055/56 G26
0
2
1
3
TIME FROM OUTPUT SHORT TO GROUND
(MINUTES)
LT1055/56 G27
10556fb
8
LT1055/LT1056
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APPLICATIONS INFORMATION
The LT1055/LT1056 may be inserted directly into LF155A/
LT355A, LF156A/LT356A, OP-15 and OP-16 sockets. Offset nulling will be compatible with these devices with the
wiper of the potentiometer tied to the positive supply.
N/C
OFFSET
TRIM
V+
7
OUTPUT
Offset Nulling
8
1
6
V+
3
5
–
LT1055
LT1056
+
6
V–
GUARD
LT1055/56 AI2
LT1055/56 AI1
No appreciable change in offset voltage drift with temperature will occur when the device is nulled with a potentiometer, RP, ranging from 10k to 200k.
The LT1055/LT1056 can also be used in LF351, LF411,
AD547, AD611, OPA-111, and TL081 sockets, provided
that the nulling cicuitry is removed. Because of the LT1055/
LT1056’s low offset voltage, nulling will not be necessary
in most applications.
Achieving Picoampere/Microvolt Performance
In order to realize the picoampere-microvolt level accuracy of the LT1055/LT1056 proper care must be exercised. For example, leakage currents in circuitry external
to the op amp can significantly degrade performance. High
quality insulation should be used (e.g. Teflon™, Kel-F);
cleaning of all insulating surfaces to remove fluxes and
other residues will probably be required. Surface coating
may be necessary to provide a moisture barrier in high
humidity environments.
Board leakage can be minimized by encircling the input
circuitry with a guard ring operated at a potential close to
that of the inputs: in inverting configurations the guard
ring should be tied to ground, in noninverting connnections
to the inverting input at pin 2. Guarding both sides of the
printed circuit board is required. Bulk leakage reduction
depends on the guard ring width.
Teflon is a trademark of Dupont.
3
OUT
4
V–
4
7
IN
PU
TS
2
2
5
OFFSET
TRIM
1 RP
The LT1055/LT1056 has the lowest offset voltage of any
JFET input op amp available today. However, the offset
voltage and its drift with time and temperature are still not
as good as on the best bipolar amplifiers because the
transconductance of FETs is considerably lower than that
of bipolar transistors. Conversely, this lower transconductance is the main cause of the significantly faster
speed performance of FET input op amps.
Offset voltage also changes somewhat with temperature
cycling. The AM grades show a typical 20µV hysteresis
(30µV on the M grades) when cycled over the –55°C to
125°C temperature range. Temperature cycling from 0°C
to 70°C has a negligible (less than 10µV) hysteresis
effect.
The offset voltage and drift performance are also affected
by packaging. In the plastic N8 package the molding
compound is in direct contact with the chip, exerting
pressure on the surface. While NPN input transistors are
largely unaffected by this pressure, JFET device matching
and drift are degraded. Consequently, for best DC performance, as shown in the typical performance distribution
plots, the TO-5 H package is recommended.
Noise Performance
The current noise of the LT1055/LT1056 is practically
immeasurable at 1.8fA/√Hz. At 25°C it is negligible up to
1G of source resistance, RS (compound to the noise of
RS). Even at 125°C it is negligible to 100M of RS.
10556fb
9
LT1055/LT1056
U
W
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APPLICATIONS INFORMATION
The voltage noise spectrum is characterized by a low 1/f
corner in the 20Hz to 30Hz range, significantly lower than
on other competitive JFET input op amps. Of particular
interest is the fact that with any JFET IC amplifier, the
frequency location of the 1/f corner is proportional to the
square root of the internal gate leakage currents and,
therefore, noise doubles every 20°C. Furthermore, as
illustrated in the noise versus chip temperature curves,
the 0.1Hz to 10Hz peak-to-peak noise is a strong function
of temperature, while wideband noise (f0 = 1kHz) is
practically unaffected by temperature.
Consequently, for optimum low frequency noise, chip
temperature should be minimized. For example, operating
an LT1056 at ±5V supplies or with a 20°C/W case-toambient heat sink reduces 0.1Hz to 10Hz noise from
typically 2.5µVP-P (±15V, free-air) to 1.5µVP-P. Similiarly,
the noise of an LT1055 will be 1.8µVP-P typically because
of its lower power dissipation and chip temperature.
capacitance is isolated from the “false summing” node,
and (2) it does not require a “flat top” input pulse since the
input pulse is merely used to steer current through the
diode bridges. For more details, please see Application
Note 10.
As with most high speed amplifiers, care should be
taken with supply decoupling, lead dress and component
placement.
When the feedback around the op amp is resistive (RF), a
pole will be created with RF, the source resistance and
capacitance (RS, CS), and the amplifier input capacitance
(CIN ≈ 4pF). In low closed-loop gain configurations and
with RS and RF in the kilohm range, this pole can create
excess phase shift and even oscillation. A small capacitor
(CF) in parallel with RF eliminates this problem. With RS
(CS + CIN) = RFCF, the effect of the feedback pole is
completely removed.
CF
High Speed Operation
RF
Settling time is measured in the test circuit shown. This
test configuration has two features which eliminate problems common to settling time measurments: (1) probe
–
RS
CIN
CS
OUTPUT
+
LT1055/56 AI03
Settling Time Test Circuit
15V
0.01 DISC
+
15k
10pF (TYPICAL)
10µF
SOLID
TANTALUM
10k
–
–15V
15k
0.01 DISC
+
2k
50Ω
2W
15V
+ 10µF
SOLID
TANTALUM
2k
+
PULSE GEN
INPUT
(5V MIN STEP)
10µF
SOLID
TANTALUM
15k
0.01 DISC
LT1055
LT1056
AUT OUTPUT
4.7k
+
AMPLIFIER
UNDER
TEST
10k
2N3866
15V
HP5082-8210
HEWLETT
PACKARD
1/2
U440
50Ω
2N160
3Ω
–15V
OUTPUT
TO SCOPE
15V
1/2
U440
–15V
100Ω
DC ZERO
15k
+
0.01 DISC
15V
10µF
SOLID TANTALUM
= 1N4148
–15V
3Ω
2N3866
2N5160
4.7k
–15V
LT1055/56 AI04
10556fb
10
LT1055/LT1056
U
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APPLICATIONS INFORMATION
Voltage Follower with Input Exceeding the Negative
Common Mode Range
Phase Reversal Protection
Most industry standard JFET input op amps (e.g., LF155/
LF156, LF351, LF411, OP15/16) exhibit phase reversal at
the output when the negitive common mode limit at the
input is exceeded (i.e., from –12V to –15V with ±15V
supplies). This can cause lock-up in servo systems. As
shown below, the LT1055/LT1056 does not have this
problem due to unique phase reversal protection circuitry
(Q1 on simplified schematic).
15V
2
7
–
LT1055/56
INPUT
±15V
SINE WAVE
3
+
4
2k
LT1055/56 AI05
Output
LT1055/LT1056
10V/DIV
10V/DIV
10V/DIV
OUTPUT
–15V
Output
(LF155/LF56, LF441, OP-15/OP-16)
Input
6
0.5ms/DIV
0.5ms/DIV
0.5ms/DIV
LT1055/56 AI06
LT1055/56 AI07
LT1055/56 AI08
U
TYPICAL APPLICATIONS †
Exponential Voltage-to-Frequency Converter for Music Synthesizers
INPUT
0V TO 10V
EXPONENT
TRIM
2500Ω*
11.3k*
500pF
POLYSTYRENE
15V
5
6
3.57k*
ZERO TRIM
4
2
2N3906
2N3904
7
–
500k
3
+
SAWTOOTH
OUTPUT
–15V
1.1k
4.7k
500Ω*
6
LT1055
1k*
562Ω*
15V
LM329
4.7k
10k*
10k*
2
15V
7
–
LM301A
1k*
3
1
2
SCALE FACTOR
1V IN OCTAVE OUT
*1% METAL FILM RESISTOR
PIN NUMBERED TRANSISTORS = CA3096 ARRAY
3
15V
6
1
4
0.01µF
8
13
8
+
9
3k
1N148
14
15 2.2k
7
33Ω
–15V
†For ten additional applications utilizing the
LT1055 and LT1056, please see the LTC1043
data sheet and Application Note 3.
TEMPERATURE CONTROL LOOP
LT1055/56 TA03
10556fb
11
LT1055/LT1056
U
TYPICAL APPLICATIO S
12-Bit Charge Balance A/D Converter
74C00
28k
0.003µF
14k
0.01
2
CLK OUTPUT (B)
15V
7
–
10k
6
LT1055
3
+
10k
2N3904
1N4148
249k*
D
4
–15V
OUTPUT
(A)
CLK
Q
74C74
Q
P
CL
1N4148
1N4148
15V
0V TO 10V INPUT
33k
LM329
10k
15V
COUPLE
THERMALLY
6
33k
15V
7
–
2
CIRCUIT OUTPUT
fOUT (A)
RATIO
fCLK (B)
LT1001
4
+
3
–15V
1N4148
LT1055/56 TA04
Fast “No Trims” 12-Bit Multiplying CMOS DAC Amplifier
Fast, 16-Bit Current Comparator
RFEEDBACK
REFERENCE
IN
DELAY = 250ns
HP5082-2810
IOUT1
TYPICAL 12-BIT
CMOS DAC
* = 1% FILM RESISTOR
15V
–
LT1055
IOUT2
OUTPUT
15V
4.7k
50k*
2
15V
–
100k*
+
INPUT
LT1055/56 TA05
3
LT1009
2.5V
7
6
LT1056
+
2
4
3
–15V
3k
8
+
7
LT1011
OUTPUT
1
–
4
–15V
LT1055/56 TA06
10556fb
12
LT1055/LT1056
U
TYPICAL APPLICATIO S
Temperature-to-Frequency Converter
560Ω
1k*
1k*
15V
15V
2N2222
10k
2N2907
6.2k*
LM329
0.01µF
POLYSTYRENE
TTL OUTPUT
0kHz TO 1kHz =
0°C TO 100°C
2.7k
2N2222
2k
100°C
ADJ
500Ω
0°C ADJ
510pF
15V
2
6.2k*
3
10k
7
–
6
LT1055
+
820Ω*
4.7k
4
–15V
LM134
510Ω
2V
137Ω*
*1% FILM RESISTOR
LT1055/56 TA07
100kHz Voltage Controlled Oscillator
15V
2
*1% FILM RESISTOR
=1N4148
100kHz
DISTORTION
TRIM
2k
9.09k*
3
22.1k
+
2
–
–15V
1k
15V
50k
10Hz
DISTORTION
TRIM
–15V
68k
FINE
DISTORTION
TRIMS
POLYSTYRENE
500pF
22M
10k
7
6 2N4391 2N4391 5k*
+
4
–15V
2.5k*
2
–
2N4391
+
–15V
GT
UP
–V
+15V
SINE OUT
2VRMS
0kHs TO 100kHs
–15
10k
22k
HP50822810
2
+
1k
8
LT1011
3
–
1k
7
1
4
20pF
10k
VR
Y1
Y2
10k*
6
4
+V
CC
W
Z1
Z2
15V
15V
7
LT1056
3
X1
X2
U1
U2 AD639
COM
5k
FREQUENCY
TRIM
68k
15pF
–15V
LT1056
3
4
4.5k
15V
10k*
6
LT1056
FREQUENCY LINEARITY = 0.1%
FREQUENCY STABILITY = 150ppm/°C
SETTLING TIME = 1.7µs
DISTORTION = 0.25% AT 100kHz,
0.07% AT 10zHz
0V TO 10V
INPUT
7
–
0.01µF
–15V
LM329
4.7k
–15V
4.7k
15V
LT1055/56 TA08
10556fb
13
LT1055/LT1056
U
TYPICAL APPLICATIO S
12-Bit Voltage Output D/A Converter
12-BIT CURRENT OUTPUT D/A
CONVERTER (e.g., 6012,565
OR DAC-80)
CF
2
0 TO 2
OR 4mA
15V
7
–
6
LT1056
3
+
CF = 15pF TO 33pF
SETTLING TIME TO 2mV
(0.8 LSB) = 1.5µs TO 2µs
OUTPUT
0V TO 10V
4
–15V
LT1055/56 TA09
W
W
SI PLIFIED SCHE ATIC
NULL
5
7 V+
7k
Q8
7k
Q7
NULL 1
J5
J6
J7
–INPUT 2
300Ω
7.5pF
Q9
+INPUT 3
J1
J2
Q15
Q12
20Ω
Q10
Q11
6 OUTPUT
J3
J8
Q2
Q1
Q14
Q13
Q5
8k
200Ω
14k
14k
9pF
Q3
120µA*
(160)
Q4
J4
120µA*
(160)
800µA*
(1000)
400µA*
(1100)
Q16
3k
50Ω
4 V–
*CURRENTS AS SHOWN FOR LT1055. (X) = CURRENTS FOR LT1056.
LT1055/56 SCHM
10556fb
14
LT1055/LT1056
U
PACKAGE DESCRIPTIO
H Package
8-Lead TO-5 Metal Can (.200 Inch PCD)
(Reference LTC DWG # 05-08-1320)
0.335 – 0.370
(8.509 – 9.398)
DIA
0.305 – 0.335
(7.747 – 8.509)
0.040
(1.016)
MAX
0.050
(1.270)
MAX
SEATING
PLANE
0.165 – 0.185
(4.191 – 4.699)
GAUGE
PLANE
0.010 – 0.045*
(0.254 – 1.143)
REFERENCE
PLANE
0.500 – 0.750
(12.700 – 19.050)
0.016 – 0.021**
(0.406 – 0.533)
0.027 – 0.045
(0.686 – 1.143)
45°TYP
PIN 1
0.028 – 0.034
(0.711 – 0.864)
0.200
(5.080)
TYP
0.110 – 0.160
(2.794 – 4.064)
INSULATING
STANDOFF
*LEAD DIAMETER IS UNCONTROLLED BETWEEN THE REFERENCE PLANE
AND 0.045" BELOW THE REFERENCE PLANE
0.016 – 0.024
**FOR SOLDER DIP LEAD FINISH, LEAD DIAMETER IS
(0.406 – 0.610)
H8(TO-5) 0.200 PCD 1197
OBSOLETE PACKAGE
N8 Package
8-Lead PDIP (Narrow .300 Inch)
(Reference LTC DWG # 05-08-1510)
0.400*
(10.160)
MAX
8
7
6
5
1
2
3
4
0.255 ± 0.015*
(6.477 ± 0.381)
0.300 – 0.325
(7.620 – 8.255)
0.009 – 0.015
(0.229 – 0.381)
(
+0.035
0.325 –0.015
+0.889
8.255
–0.381
)
0.045 – 0.065
(1.143 – 1.651)
0.130 ± 0.005
(3.302 ± 0.127)
0.065
(1.651)
TYP
0.100
(2.54)
BSC
0.125
(3.175) 0.020
MIN (0.508)
MIN
0.018 ± 0.003
(0.457 ± 0.076)
N8 1098
*THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.010 INCH (0.254mm)
10556fb
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
15
LT1055/LT1056
U
TYPICAL APPLICATIO
±120V Output Precision Op Amp
125V
1µF
±25mA OUTPUT
HEAT SINK OUTPUT
TRANSISTORS
330Ω
510Ω
10k
2N5415
1N965
100pF
10k
2N3440
50k
2
10k
–
+
1k
2N2222
27Ω
1N4148
7
6
LT1055
3
INPUT
1M
OUTPUT
4
27Ω
1N4148
1k
50k
2N2907
1M
2N5415
2N3440
1N965
10k
33pF
100k
510Ω
330Ω
1µF
–125V
LT1055/56 TA10
U
PACKAGE DESCRIPTIO
0.189 – 0.197*
(4.801 – 5.004)
0.010 – 0.020
× 45°
(0.254 – 0.508)
0.008 – 0.010
(0.203 – 0.254)
0.053 – 0.069
(1.346 – 1.752)
0°– 8° TYP
0.016 – 0.050
(0.406 – 1.270)
0.014 – 0.019
(0.355 – 0.483)
TYP
*DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
**DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD
FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
8
7
6
5
0.004 – 0.010
(0.101 – 0.254)
0.050
(1.270)
BSC
0.150 – 0.157**
(3.810 – 3.988)
0.228 – 0.244
(5.791 – 6.197)
1
2
3
4
SO8 1298
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
LT1122
Fast Settling JFET Op Amp
340ns Settling Time, GBW = 14MHz, SR = 60V/µs
LT1792
Low Noise JFET Op Amp
en = 6nV/√Hz Max at f = 1kHz
10556fb
16
Linear Technology Corporation
LT/CPI 0302 1.5K REV B • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com
 LINEAR TECHNOLOGY CORPORATION 1994
This datasheet has been download from:
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