RH108A - Operational Amplifier

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RH108A
Operational Amplifier
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
The RH108A is a precision operational amplifier particularly well-suited for high source impedance applicationsrequiring low offset and bias currents and low powerconsumption.
(Note 1)
Supply Voltage ........................................................±20V
Differential Input Current (Note 1) .......................±10mA
Input Voltage (Note 2)............................................ ±15V
Output Short-Circuit Duration .......................... Indefinite
Operating Temperature Range................ –55°C to 125°C
Storage Temperature Range................... –65°C to 150°C
Lead Temperature (Soldering, 10 sec) .................. 300°C
The wafer lots are processed to Linear Technology’s inhouse Class S flow to yield circuits usable in stringentmilitary applications.
For complete electrical specifications, performance curves
and applications information, see the LM108A/LM108
data sheet.
L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear
Technology Corporation. All other trademarks are the property of their respective owners.
BURN-IN CIRCUIT
10k
20V
20V
33pF
7
2
8
–
1
200Ω
3
2
OR
6
249k
+
3V
4
3
30pF
7
–
+
8
1
6
1.5k
4
10k
–20V
–20V
RH108A BI
PACKAGE INFORMATION
TOP VIEW
8
COMP1 1
7 V+
–
–IN 2
+
COMP1 1
–IN 2
6 OUT
5 NC
+IN 3
TOP VIEW
TOP VIEW
COMP2
+IN 3
8
–
+
V– 4
4
V – (CASE)
H PACKAGE
8-LEAD TO-5 METAL CAN
J8 PACKAGE
8-LEAD CERDIP
7
COMP2
V
+
6
OUT
5
NC
COMPIN
NC
1
10
GUARD
2
9
COMPOUT
–IN
3
8
V+
+IN
4
7
OUT
GUARD
5
6
V–
W PACKAGE
10-LEAD CERPAC
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RH108A
TABLE 1: ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
VOS
Input Offset Voltage
ΔVOS
ΔTemp
Average Tempco of Offset
Voltage
IOS
Input Offset Current
ΔTemp
Average Tempco of Offset
Current
IB
Input Bias Current
AVOL
Large-Signal Voltage Gain
ΔIS
CONDITIONS
NOTES
(Preirradiation, Note 4)
MIN
TA = 25°C
TYP MAX
SUBGROUP
0.5
–55°C ≤ TA ≤ 125°C
MIN TYP MAX
1
1.0
3
SUBGROUP
2,3
5.0
0.2
1
0.4
3
VS = ±15V, VOUT = ±10V
RL ≥ 10k
1
80
3.0
4
40
mV
μV/°C
2,3
2.5
2.0
UNITS
nA
pA/°C
2,3
nA
5,6
V/mV
CMRR
Common Mode Rejection Ratio
96
1
96
2,3
dB
PSRR
Power Supply Rejection Ratio
96
1
96
2,3
dB
Input Voltage Range
VS = ±15V
VS = ±15V, RL = 10k
VOUT
Output Voltage Swing
RIN
Input Resistance
IS
Supply Current
3
±13.5
±13
3
4
V
±13
5,6
30
0.6
TABLE 1A: ELECTRICAL CHARACTERISTICS
1
0.4
2
mA
(Preirradiation, Note 4)
10KRAD (Si)
MIN MAX
20KRAD (Si) 50KRAD (Si) 80KRAD (Si)
MIN MAX MIN MAX MIN MAX
SYMBOL
PARAMETER
VOS
Input Offset Voltage
0.5
0.5
0.5
1.0
mV
IOS
Input Offset Current
0.3
0.3
0.3
0.3
nA
IB
Input Bias Current
AVOL
Large-Signal Voltage Gain
CMRR
Common Mode Rejection Ratio
PSRR
Power Supply Rejection Ratio
Input Voltage Range
VOUT
Output Voltage Swing
RIN
Input Resistance
IS
Supply Current
NOTES
V
MΩ
(Note 6)
CONDITIONS
±13.5
±2.0
VS = ±15V, VOUT = ±10V
RL ≥ 10k
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: For supply voltages less than ±15V, the maximum input voltage
isequal to the supply voltage.
±2.0
±2.0
±4.0
UNITS
nA
98
98
90
86
dB
96
96
84
70
dB
4
96
96
84
70
dB
3
±13.5
±13.5
±13.5
±13.5
V
±13
±13
±13
±13
V
3
30
30
0.6
30
0.6
30
0.6
MΩ
0.6
mA
Note 3: Guaranteed by design, characterization or correlation to
othertested parameters.
Note 4: ±5V ≤ VS ≤ ±20V preirradiation, ±5V ≤ VS ≤ ±15V postirradiation,
unless otherwise noted.
Note 5: VS = ±15V, VCM = 0V, TA = 25°C unless otherwise noted.
Note 6: 25°C ≤ TA ≤ 125°C.
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RH108A
TABLE 2: ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUP
Final Electrical Test Requirements (Method 5004)
1*,2,3,4,5,6
Group A Test Requirements (Method 5005)
1,2,3,4,5,6
Group C and D End Point Electrical Parameters
(Method 5005)
PDA Test Notes
The PDA is specified as 5% based on failures from group A, subgroup 1,
tests after cooldown as the final electrical test in accordance with method
5004 of MIL-STD-883 Class B. The verified failures (including Delta
parameters) of group A, subgroup 1, after burn-in divided by the total
number of devices submitted for burn-in in that lot shall be used to
determine the percent for the lot.
1
*PDA applies to subgroup 1. See PDA Test Notes.
Linear Technology Corporation reserves the right to test to tighter limits
than those given.
TOTAL DOSE BIAS CIRCUIT
10k
15V 0.1μF
2
10k
8V
3
30pF
7
1
–
8
+
6
4
0.1μF
–15V
REVISION HISTORY
RH108A TDBC
(Revision history begins at Rev C)
REV
DATE
DESCRIPTION
C
11/10
Note 4 revised and added to Power Supply Rejection Ratio.
PAGE NUMBER
2
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Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
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RH108A
TYPICAL PERFORMANCE CHARACTERISTICS
Input Offset Voltage
Input Bias Current
6
V S = 15V
VCM = 0V
V S = 15V
VCM = 0V
4
0.5
0
–0.5
–1.0
–1.5
2
0
–2
–4
10
100
TOTAL DOSE KRAD (Si)
1000
–1.0
1000
1
110
100
90
80
70
1000
Power Supply Rejection Ratio
V S = 15V
VCM = 13.5V
150
1000
160
POWER SUPPLY REJECTION RATIO (dB)
COMMON MODE REJECTION RATIO (dB)
120
10
100
TOTAL DOSE KRAD (Si)
10
100
TOTAL DOSE KRAD (Si)
RH108A G03
Common Mode Rejection Ratio
160
V S = 15V
VOUT = 10V
RL = 10k
1
–0.5
RH108A G02
Open-Loop Gain
130
0
–2.0
10
100
TOTAL DOSE KRAD (Si)
1
RH108A G01
140
0.5
–1.5
–8
1
V S = 15V
VCM = 0V
1.0
–6
–2.0
OPEN-LOOP GAIN (V/mV)
Input Offset Current
1.5
INPUT OFFSET CURRENT (nA)
1.0
INPUT BIAS CURRENT (nA)
INPUT OFFSET VOLTAGE (mV)
1.5
140
130
120
110
100
90
80
140
120
100
80
60
40
20
70
1
RH108A G04
10
100
TOTAL DOSE KRAD (Si)
1000
RH108A G05
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH108A G06
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Linear Technology Corporation
ID No. 66-10-0156 • LT 1110 REV C • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com
© LINEAR TECHNOLOGY CORPORATION 1989
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