FGAF40N60UF
600 V PT IGBT
General Description
Features
Fairchild's UF series of IGBTs provide low conduction and
switching losses. The UF series is designed for applications
such as general inverters and PFC where high speed
switching is a required feature.
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 20 A
• High Input Impedance
Applications
General Inverter, PFC
C
G
TO-3PF
G C E
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
E
TC = 25C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ TC = 25C
@ TC = 100C
@ TC = 25C
@ TC = 100C
Ratings
600
 20
40
20
160
100
40
-55 to +150
-55 to +150
Unit
V
V
A
A
A
W
W
C
C
300
C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2004 Fairchild Semiconductor Corporation
FGAF40N60UF Rev. C1
Typ.
---
Max.
1.2
40
Unit
C/W
C/W
www.fairchildsemi.com
FGAF40N60UF — 600 V PT IGBT
November 2013
Symbol
Parameter
C
= 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
VGE = 0 V, IC = 250 uA
600
--
--
V
VGE = 0 V, IC = 1 mA
--
0.6
--
V/C
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
---
---
250
± 100
uA
nA
3.5
---
5.1
2.3
3.1
6.5
3.0
--
V
V
V
----
1075
170
50
----
pF
pF
pF
-------------------
15
30
65
35
470
130
600
30
37
110
80
500
310
810
77
20
25
14
--130
100
--1000
--200
250
--1200
150
30
40
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
Off Characteristics
BVCES
BVCES/
TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
IC = 20 mA, VCE = VGE
IC = 20 A, VGE = 15 V
IC = 40 A, VGE = 15 V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Le
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
©2004 Fairchild Semiconductor Corporation
FGAF40N60UF Rev. C1
VCC = 300 V, IC = 20 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 25C
VCC = 300 V, IC = 20 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 125C
VCE = 300 V, IC = 20 A,
VGE = 15 V
Measured 5mm from PKG
www.fairchildsemi.com
FGAF40N60UF — 600 V PT IGBT
Electrical Characteristics of the IGBT T
Common Emitter
Tc = 25℃
20V
Collector Current, Ic (A)
12V
80
60
Collector Current , Ic (A)
15V
120
Common Emitter
VGE=15V
Tc= 25℃
Tc= 125℃
70
VGE = 10V
40
50
40
30
20
10
0
0
0
2
4
6
0.5
8
Collector-Emitter Voltage,VCE(V)
Fig 1. Typical Output Characteristics
4
1
10
Collector-Emitter Voltage, VCE(V)
Fig 2. Typical Saturation Voltage
Characteristics
30
Common Emitter
Vge=15V
Vcc = 300V
Load Current : peak of square wave
40A
20
Load Current [A]
Collector - Emitter Voltage, V
CE
[V]
25
3
20A
2
Ic=10A
1
15
10
5
0
0
30
60
90
120
0
150
0.1
Case Temperature, TC [℃]
100
1000
20
[V]
Common Emitter
TC = 25℃
CE
16
Collector - Emitter Voltage, V
[V]
10
Fig 4. Load Current vs. Frequency
20
CE
1
Frequency [kHz]
Fig 3. Saturation Voltage vs.
Case Temperature at Variant Current Level
Collector - Emitter Voltage, V
Duty cycle : 50%
Tc = 100 ℃
Powe Dissipation = 24W
12
8
20A
4
40A
IC = 10A
0
Common Emitter
TC = 125℃
16
12
8
40A
4
20A
Ic=10A
0
0
4
8
12
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
©2004 Fairchild Semiconductor Corporation
FGAF40N60UF Rev. C1
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Fig 6. Saturation Voltage vs. VGE
www.fairchildsemi.com
FGAF40N60UF — 600 V PT IGBT
80
160
300
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
2500
Common Emitter
Vcc=300V,VGE= ± 15V
Ic=20A
Tc = 25℃
Tc = 125℃ - - - -
Switching Time (ns)
Capacitance (pF)
Cies
2000
Coes
1500
1000
Cres
100
Ton
Tr
500
10
0
1
1
30
10
10
Collector-Emitter Voltage, VCE (V)
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
2000
Common Emitter
Vcc=300V,VGE= ± 15V
Ic=20A
Tc = 25℃
Tc = 125℃
Common Emitter
Vcc=300V,VGE=± 15V
Ic=20A
Tc = 25℃
Tc = 125℃
1000
Toff
Eon
Switching Time (uJ)
Switching Time (ns)
200
100
Gate Resistance, RG( Ω )
100
Tf
Eoff
100
Tf
50
20
1
10
100
200
1
10
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
1000
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 10
Ton
Common Emitter
VCC = 300V, VGE = ± 15V
Switching Time [nS]
100
Switching Time (ns)
200
Fig 10. Switching Loss vs. Gate Resistance
200
10
100
Gate Resistance, RG( Ω )
Gate Resistance, RG( Ω )
TC = 25℃
TC = 125℃
100
Toff
Toff
Tf
RG = 10
Tr
TC = 25℃
Tf
TC = 125℃
20
10
15
20
25
30
Collector Current, Ic (A)
Fig 11. Turn-On Characteristics vs.
Collector Current
©2004 Fairchild Semiconductor Corporation
FGAF40N60UF Rev. C1
35
40
10
15
20
25
30
35
40
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
www.fairchildsemi.com
FGAF40N60UF — 600 V PT IGBT
3000
Common Emitter
RL=15 Ω
Eon
100 Eoff
Common Emitter
VCC = 300V, VGE = ± 15V
Eoff
RG = 10
TC = 25℃
(Tc=25 ℃)
12
Gate-Emitter Voltage, VGE (V)
Switching Time (uJ)
1000
300V
200V
9
Vcc=100V
6
3
TC = 125℃
10
0
10
15
20
25
30
35
40
0
30
Collector Current , Ic (A)
60
90
120
Gate Charge, Qg (nC)
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
500
Ic MAX (Pulsed)
100
Collector Current, I C [A]
Collector Current, Ic [A]
100
50s
Ic MAX (Continuous)
100s
1ms
10
DC Operation
1
Single Nonrepetitive
o
Pulse Tc = 25 C
Curves must be derated
linearly with increase
in temperature
0.1
10
1
Safe Operating Area
o
V GE=20V, TC=100 C
0.1
1
1
10
100
10
100
1000
1000
Collector-Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
Fig 15. SOA Characteristics
Thermal Response [Zthjc]
1
0.5
0.2
0.1
0.1
0.05
Pdm
0.02
t1
0.01
t2
0.01
Duty factor D = t1 / t2
Peak Tj = Pdm  Zthjc + TC
single pulse
1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2004 Fairchild Semiconductor Corporation
FGAF40N60UF Rev. C1
www.fairchildsemi.com
FGAF40N60UF — 600 V PT IGBT
15
3000
FGAF40N60UF — 600 V PT IGBT
Mechanical Dimensions
Figure 18. TO3PF,MOLDED,3LD,FULLPACK (AG)
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©2004 Fairchild Semiconductor Corporation
FGAF40N60UF Rev. C1
www.fairchildsemi.com
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Datasheet contains the design specifications for product development. Specifications
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Datasheet contains preliminary data; supplementary data will be published at a later
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Rev. I66
©2004 Fairchild Semiconductor Corporation
FGAF40N60UF Rev. C1
www.fairchildsemi.com
FGAF40N60UF — 600 V PT IGBT
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