Data Sheet, V2.1, July 2008
BGA736L16
Tri-Band HSDPA LNA
(2100, 1900/2100, 800/900 MHz)
RF & Protection Devices
Edition 2008-07-03
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2009.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BGA736L16 - Tri-Band HSDPA LNA
BGA736L16
Revision History: 2008-07-03, V2.1
Previous Version: 2008-02-27, V2.0
Page
Subjects (major changes since last revision)
5, 6
Updated HBM ESD protection
11
Added RF characteristics for UMTS band VIII
13
Added RF characteristics for UMTS band IV
39
Added application circuit schematic for UMTS bands I, IV and VIII
all
Updated values for high and mid gain currents
Data Sheet
3
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
2.9.1
2.9.2
2.10
2.10.1
2.10.2
2.11
2.11.1
2.12
2.13
2.14
2.15
2.16
2.17
2.18
2.19
2.20
2.21
2.22
2.23
2.24
2.25
2.26
2.27
2.28
2.29
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Band Select / Gain Control Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Supply current characteristics; TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Logic Signal Characteristics; TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Measured RF Characteristics Low Band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Measured RF Characteristics UMTS Band V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Measured RF Characteristics UMTS Band VIII . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Measured RF Characteristics Mid Band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Measured RF Characteristics UMTS Band II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Measured RF Characteristics UMTS Band IV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Measured RF Characteristics High Band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Measured RF Characteristics UMTS Band I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Measured Performance Low Band High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Measured Performance Low Band High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . . 16
Measured Performance Low Band Mid Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Measured Performance Low Band Mid Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 19
Measured Performance Low Band Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Measured Performance Low Band Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . . 21
Measured Performance Mid Band High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Measured Performance Mid Band High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . . 24
Measured Performance Mid Band Mid Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Measured Performance Mid Band Mid Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 26
Measured Performance Mid Band Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Measured Performance Mid Band Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 29
Measured Performance High Band High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . 30
Measured Performance High Band High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . 31
Measured Performance High Band Mid Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Measured Performance High Band Mid Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . . 34
Measured Performance High Band Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Measured Performance High Band Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . . 36
3
3.1
3.2
3.3
3.4
Application Circuit and Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UMTS bands I, II and V Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UMTS bands I, IV and VIII Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
4.1
4.2
Physical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Package Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Data Sheet
4
38
38
39
40
41
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Description
1
Description
The BGA736L16 is a highly flexible, tri-gain mode, and tri-band (2100, 1900/2100, 800/900 MHz) MMIC low noise
amplifier for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the BGA736L16
features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection on-chip and
matching off chip.
While two gain modes are common in W-CDMA systems, a third gain mode has been introduced to reduce the
LNA gain just enough to pass adjacent channel tests without compromising on HSDPA performance. The
1900 MHz path can be converted into a 2100 MHz path and vice versa by optimizing the input matching and using
an additional external output matching network. This document specifies device performance for the band
combinations - UMTS bands I / II / V and UMTS bands I / IV / VIII.
Features
• Gain: 16 / 3 / -8 dB in high / mid / low gain mode
• Noise figure: 1.1 dB in high gain mode
• Supply current: 5.3 / 5.3 / 0.85 mA in high / mid / low gain modes
• Standby mode current consumption < 2 µA
• Outputs internally matched to 50 Ω
• 2 kV HBM ESD protection
• Low external component count
• Small leadless TSLP-16-1 package (2.3 x 2.3 x 0.39 mm)
• Pb-free (RoHS compliant) package
TSLP-16-1 package
QF
5)*1'+
9&&
9*6 9*6 5),10
5)2870
5),1+
5)287+
5)*1'0
Figure 1
QF
%LDVLQJ/RJLF
&LUFXLWU\
5),1/
9(1 5)287/
9(1 55() Block diagram of triple-band LNA
Type
Package
Marking
Chip
BGA736L16
PG-TSLP-16-1
BGA736
T1540
Data Sheet
5
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Absolute Maximum Ratings
2
Electrical Characteristics
2.1
Absolute Maximum Ratings
Table 1
Absolute Maximum Ratings
Parameter
Symbol
VCC
Supply current
ICC
Pin voltage
VPIN
Pin voltage RF input pins
VRFIN
RF input power
PRFIN
Junction temperature
Tj
Ambient temperature range TA
Storage temperature range TSTG
Supply voltage
2.2
Thermal Resistance
Table 2
Thermal Resistance
Parameter
Symbol
Thermal resistance junction RthJS
to soldering point
2.3
ESD Integrity
Table 3
ESD Integrity
Parameter
Symbol
Values
Unit
Min.
Max.
-0.3
3.6
V
10
mA
-0.3
VCC +0.3
V
-0.3
0.9
V
4
dBm
150
°C
-30
85
°C
-65
150
°C
Note / Test Condition
All pins except RF input pins
Value
Unit
Note / Test Conditions
≤ 110
K/W
Value
Unit
Note / Test Conditions
V
All pins
Typ.
ESD hardness HBM
1)
VESD-HBM
2000
1) According to JESD22-A114
Data Sheet
6
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
DC Characteristics
2.4
DC Characteristics
Table 4
DC Characteristics, TA = 25 °C
Parameter
Symbol
VCC
Supply current high and mid ICCHG
gain mode
ICCMG
Supply voltage
Values
Min.
Typ.
Max.
2.7
2.8
3.0
-30°C
25°C
85°C
mA
mA
mA
µA
ICCLG
850
Supply current standby
mode
ICCOFF
0.1
Logic level high
VHI
VLOW
IENL
IENH
IGSL
IGSH
Logic currents VEN
Logic currents VGS
1.5
2.8
V
0.5
µA
10.0
µA
0.1
µA
5.0
µA
Band Select / Gain Control Truth Table
Table 5
Band Select Truth Table, VCC = 2.8 V
All bands
VEN1 and VEN2
V
0.2
2.5
All bands
Supply current is
proportional to absolute
temperature
µA
2
0.0
Note / Test Condition
V
4.3
5.3
6.4
Supply current low gain
mode
Logic level low
Unit
VEN1 and VEN2
VGS
High band
Mid band
Low band
Standby mode
VEN1
H
H
L
L
VEN2
H
L
H
L
Table 6
Gain Control Truth Table, VCC = 2.8 V
High Gain
Mid Gain
Low Gain
VGS1
H
H
L
VGS2
L
H
L
Data Sheet
7
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Supply current characteristics; TA = 25 °C
Supply current characteristics; TA = 25 °C
2.6
Supply current high / mid gain mode versus reference resistor RREF (see Figure 2 on page 38 for reference
resistor; low gain mode supply current is independent of reference resistor).
Supply Current Highband ICC = f (RREF)
Supply Current Midband ICC = f (RREF)
VCC = 2.8 V
9
9
8
8
7
7
Icc [mA]
Icc [mA]
VCC = 2.8 V
6
5
6
5
4
4
3
3
2
1
10
2
100
RREF [kΩ]
1
10
100
RREF [kΩ]
Supply Current Lowband ICC = f (RREF)
VCC = 2.8 V
9
8
Icc [mA]
7
6
5
4
3
2
1
10
100
RREF [kΩ]
Data Sheet
8
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Logic Signal Characteristics; TA = 25 °C
Logic Signal Characteristics; TA = 25 °C
2.7
Current consumption of logic inputs VEN1, VEN2, VGS1, VGS2
Logic Currents IEN1,2 = f (VEN1,2)
VCC = 2.8 V
Logic Currents IGS1,2 = f (VGS1,2)
VCC = 2.8 V
12
6
10
4
IGS1,2 [µA]
IEN1,2 [µA]
8
6
4
2
2
0
0
0.5
1
1.5
2
2.5
0
3
0
0.5
1
VEN1,2 [V]
2.8
Switching Times
Table 7
Typical switching times; TA = -30 ... 85 °C
Parameter
1.5
2
2.5
3
VGS1,2 [V]
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Settling time gainstep
tGS
1
µs
Switching from any gain
mode to a different gain
mode; all bands
Settling time bandselect
tBS
1.6
µs
Switching from any band
to a different band; all
gain modes
Data Sheet
9
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured RF Characteristics Low Band
2.9
Measured RF Characteristics Low Band
2.9.1
Measured RF Characteristics UMTS Band V
Table 8
Typical Characteristics 800 MHz Band, TA = 25 °C, VCC = 2.8 V, RREF = 8.2 kΩ
Parameter
Symbol
Values
Min.
Pass band range
869
Current consumption
Gain
Reverse Isolation
1)
Noise figure
Input return loss
1)
1)
Output return loss
2)
Stability factor
Input compression point1)
1)
Typ.
Inband IIP3
f1 - f2 = 1 MHz
Pf1 = Pf2 = -25 dBm
Unit
Note / Test Condition
Max.
894
MHz
ICCHG
ICCMG
ICCLG
S21HG
S21MG
S21LG
S12HG
S12MG
S12LG
NFHG
NFMG
NFLG
S11HG
S11MG
S11LG
S22HG
S22MG
S22LG
k
5.20
mA
High gain mode
5.20
mA
Mid gain mode
IP1dBHG
IP1dBMG
IP1dBLG
IIP3HG
IIP3MG
IIP3LG
-11
dBm
High gain mode
-10
dBm
Mid gain mode
-12
dBm
Low gain mode
-5
-5
-3
dBm
High gain mode
Mid gain mode
Low gain mode
0.85
mA
Low gain mode
15.5
dB
High gain mode
3.0
dB
Mid gain mode
-8.9
dB
Low gain mode
-38
dB
High gain mode
-40
dB
Mid gain mode
-9
dB
Low gain mode
1.1
dB
High gain mode
2.4
dB
Mid gain mode
9.0
dB
Low gain mode
-14
dB
50 Ω, high gain mode
-12
dB
50 Ω, mid gain mode
-10
dB
50 Ω, low gain mode
-20
dB
50 Ω, high gain mode
-22
dB
50 Ω, mid gain mode
-18
dB
50 Ω, low gain mode
>3.1
DC to 10 GHz; all gain
modes
1) Verified by random sampling; not 100% RF tested
2) Not tested in production; guaranteed by device design
Data Sheet
10
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured RF Characteristics Low Band
2.9.2
Measured RF Characteristics UMTS Band VIII
Table 9
Typical Characteristics 900 MHz Band, TA = 25 °C, VCC = 2.8 V, RREF = 8.2 kΩ
Parameter
Symbol
Values
Min.
Pass band range
Current consumption
Gain
Reverse Isolation
1)
Noise figure
Input return loss
1)
Output return loss1)
2)
Stability factor
Input compression point1)
1)
Typ.
925
Inband IIP3
f1 - f2 = 1 MHz
Pf1 = Pf2 = -25 dBm
Unit
Note / Test Condition
Max.
960
MHz
ICCHG
ICCMG
ICCLG
S21HG
S21MG
S21LG
S12HG
S12MG
S12LG
NFHG
NFMG
NFLG
S11HG
S11MG
S11LG
S22HG
S22MG
S22LG
k
5.20
mA
High gain mode
5.20
mA
Mid gain mode
0.85
mA
Low gain mode
15.2
dB
High gain mode
2.8
dB
Mid gain mode
-8.8
dB
Low gain mode
-37
dB
High gain mode
-39
dB
Mid gain mode
-9
dB
Low gain mode
1.2
dB
High gain mode
2.6
dB
Mid gain mode
9.0
dB
Low gain mode
-14
dB
50 Ω, high gain mode
-12
dB
50 Ω, mid gain mode
-11
dB
50 Ω, low gain mode
-20
dB
50 Ω, high gain mode
-19
dB
50 Ω, mid gain mode
-19
dB
50 Ω, low gain mode
IP1dBHG
IP1dBMG
IP1dBLG
IIP3HG
IIP3MG
IIP3LG
-9
dBm
High gain mode
-5
dBm
Mid gain mode
-11
dBm
Low gain mode
-5
-5
-3
dBm
High gain mode
Mid gain mode
Low gain mode
>3.4
DC to 10 GHz; all gain
modes
1) Verified by random sampling; not 100% RF tested
2) Not tested in production; guaranteed by device design
Data Sheet
11
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured RF Characteristics Mid Band
2.10
Measured RF Characteristics Mid Band
2.10.1
Measured RF Characteristics UMTS Band II
Table 10
Typical Characteristics 1900 MHz Band, TA = 25 °C, VCC = 2.8 V, RREF = 8.2 kΩ
Parameter
Symbol
Values
Min.
Pass band range
1930
Current consumption
Gain
Reverse Isolation
1)
Noise figure
Input return loss
1)
1)
Output return loss
2)
Stability factor
Input compression point1)
1)
Typ.
Inband IIP3
f1 - f2 = 1 MHz
Pf1 = Pf2 = -26 dBm
Unit
Note / Test Condition
Max.
1990
MHz
ICCHG
ICCMG
ICCLG
S21HG
S21MG
S21LG
S12HG
S12MG
S12LG
NFHG
NFMG
NFLG
S11HG
S11MG
S11LG
S22HG
S22MG
S22LG
k
5.30
mA
High gain mode
5.30
mA
Mid gain mode
IP1dBHG
IP1dBMG
IP1dBLG
IIP3HG
IIP3MG
IIP3LG
-13
dBm
High gain mode
-13
dBm
Mid gain mode
-7
dBm
Low gain mode
-5
-6
2
dBm
High gain mode
Mid gain mode
Low gain mode
0.85
mA
Low gain mode
16.1
dB
High gain mode
2.7
dB
Mid gain mode
-8.1
dB
Low gain mode
-35
dB
High gain mode
-36
dB
Mid gain mode
-8
dB
Low gain mode
1.0
dB
High gain mode
2.3
dB
Mid gain mode
7.8
dB
Low gain mode
-15
dB
50 Ω, high gain mode
-12
dB
50 Ω, mid gain mode
-11
dB
50 Ω, low gain mode
-19
dB
50 Ω, high gain mode
-18
dB
50 Ω, mid gain mode
-18
dB
50 Ω, low gain mode
>2.6
DC to 10 GHz; all gain
modes
1) Verified by random sampling; not 100% RF tested
2) Not tested in production; guaranteed by device design
Data Sheet
12
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured RF Characteristics Mid Band
2.10.2
Measured RF Characteristics UMTS Band IV
Table 11
Typical Characteristics 2100 MHz Band, TA = 25 °C, VCC = 2.8 V, RREF = 8.2 kΩ
Parameter
Symbol
Values
Min.
Pass band range
Current consumption
Gain
Reverse Isolation
1)
Noise figure
Input return loss
1)
Output return loss1)
2)
Stability factor
Input compression point1)
1)
Typ.
2110
Inband IIP3
f1 - f2 = 1 MHz
Pf1 = Pf2 = -26 dBm
Unit
Note / Test Condition
Max.
2155
MHz
ICCHG
ICCMG
ICCLG
S21HG
S21MG
S21LG
S12HG
S12MG
S12LG
NFHG
NFMG
NFLG
S11HG
S11MG
S11LG
S22HG
S22MG
S22LG
k
5.30
mA
High gain mode
5.30
mA
Mid gain mode
0.85
mA
Low gain mode
15.3
dB
High gain mode
2.3
dB
Mid gain mode
-7.5
dB
Low gain mode
-34
dB
High gain mode
-35
dB
Mid gain mode
-8
dB
Low gain mode
1.1
dB
High gain mode
2.7
dB
Mid gain mode
7.5
dB
Low gain mode
-19
dB
50 Ω, high gain mode
-14
dB
50 Ω, mid gain mode
-12
dB
50 Ω, low gain mode
-18
dB
50 Ω, high gain mode
-17
dB
50 Ω, mid gain mode
-15
dB
50 Ω, low gain mode
IP1dBHG
IP1dBMG
IP1dBLG
IIP3HG
IIP3MG
IIP3LG
-12
dBm
High gain mode
-12
dBm
Mid gain mode
-6
dBm
Low gain mode
-5
-6
2
dBm
High gain mode
Mid gain mode
Low gain mode
>2.6
DC to 10 GHz; all gain
modes
1) Verified by random sampling; not 100% RF tested
2) Not tested in production; guaranteed by device design
Data Sheet
13
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured RF Characteristics High Band
2.11
Measured RF Characteristics High Band
2.11.1
Measured RF Characteristics UMTS Band I
Table 12
Typical Characteristics 2100 MHz Band, TA = 25 °C, VCC = 2.8 V, RREF = 8.2 kΩ
Parameter
Symbol
Values
Min.
Pass band range
2110
Current consumption
Gain
Reverse Isolation
1)
Noise figure
Input return loss
1)
1)
Output return loss
2)
Stability factor
Input compression point1)
1)
Typ.
Inband IIP3
f1 - f2 = 1 MHz
Pf1 = Pf2 = -27 dBm
Unit
Note / Test Condition
Max.
2170
MHz
ICCHG
ICCMG
ICCLG
S21HG
S21MG
S21LG
S12HG
S12MG
S12LG
NFHG
NFMG
NFLG
S11HG
S11MG
S11LG
S22HG
S22MG
S22LG
k
5.30
mA
High gain mode
5.30
mA
Mid gain mode
IP1dBHG
IP1dBMG
IP1dBLG
IIP3HG
IIP3MG
IIP3LG
-13
dBm
High gain mode
-13
dBm
Mid gain mode
-7
dBm
Low gain mode
-5
-5
2
dBm
High gain mode
Mid gain mode
Low gain mode
0.85
mA
Low gain mode
16.2
dB
High gain mode
2.3
dB
Mid gain mode
-8.0
dB
Low gain mode
-35
dB
High gain mode
-36
dB
Mid gain mode
-8
dB
Low gain mode
1.0
dB
High gain mode
2.6
dB
Mid gain mode
7.9
dB
Low gain mode
-13
dB
50 Ω, high gain mode
-12
dB
50 Ω, mid gain mode
-10
dB
50 Ω, low gain mode
-19
dB
50 Ω, high gain mode
-24
dB
50 Ω, mid gain mode
-14
dB
50 Ω, low gain mode
>2.2
DC to 10 GHz; all gain
modes
1) Verified by random sampling; not 100% RF tested
2) Not tested in production; guaranteed by device design
Data Sheet
14
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured Performance Low Band High Gain Mode vs. Frequency
2.12
Measured Performance Low Band High Gain Mode vs. Frequency
TA = 25 °C, VCC = 2.8 V, VGS1 = 2.8 V, VGS2 = 0 V, VEN1 = 0 V, VEN2 = 2.8 V, RREF = 8.2 kΩ
Power Gain |S21| = f( f )
Power Gain Wideband |S21| = f( f )
17
20
10
16.5
Power Gain [dB]
Power Gain [dB]
0
16
−30°C
15.5
25°C
85°C
15
−10
−20
−30
−40
14.5
14
0.86
−50
0.87
0.88
0.89
−60
0.9
0
2
Frequency [GHz]
4
6
8
10
8
10
Frequency [GHz]
Matching |S11| = f( f ), |S22| = f( f )
Reverse Isolation |S12| = f( f )
0
0
−5
−10
−20
S
11
−15
|S12| [dB]
|S11|, |S22| [dB]
−10
S
22
−30
−20
−40
−25
−50
−30
−35
0.86
0.87
0.88
0.89
−60
0.9
Frequency [GHz]
Data Sheet
0
2
4
6
Frequency [GHz]
15
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured Performance Low Band High Gain Mode vs. Temperature
Noise Figure NF = f( f )
Input Compression P1dB = f( f )
1.7
−10
1.6
1.5
−11
1.4
P1dB [dBm]
NF [dB]
1.3
1.2
1.1
1
−12
−13
0.9
−14
0.8
0.7
0.6
0.86
0.87
0.88
0.89
−15
0.86
0.9
0.87
Frequency [GHz]
2.13
0.88
0.89
0.9
Frequency [GHz]
Measured Performance Low Band High Gain Mode vs. Temperature
VCC = 2.8 V, VGS1 = 2.8 V, VGS2 = 0 V, VEN1 = 0 V, VEN2 = 2.8 V, RREF = 8.2 kΩ
Power Gain |S21| = f(TA)
Supply Current ICC = f(TA)
18
7
17.5
6.5
6
16.5
ICC [mA]
Power Gain [dB]
17
16
5.5
15.5
5
15
4.5
14.5
14
−40
−20
0
20
40
60
80
4
−40
100
T [°C]
0
20
40
60
80
100
T [°C]
A
Data Sheet
−20
A
16
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured Performance Low Band Mid Gain Mode vs. Frequency
Noise Figure NF = f(TA)
Input Compression P1dB = f(TA)
1.7
−5
1.6
1.5
−7
1.4
P1dB [dBm]
NF [dB]
1.3
1.2
1.1
1
−9
−11
0.9
−13
0.8
0.7
0.6
−40
−20
0
20
40
60
80
−15
−40
100
−20
0
TA [°C]
2.14
20
40
60
80
100
TA [°C]
Measured Performance Low Band Mid Gain Mode vs. Frequency
TA = 25 °C, VCC = 2.8 V, VGS1 = 2.8 V, VGS2 = 2.8 V, VEN1 = 0 V, VEN2 = 2.8 V, RREF = 8.2 kΩ
Power Gain |S21| = f( f )
Power Gain Wideband |S21| = f( f )
4
10
0
3.5
−10
Power Gain [dB]
Power Gain [dB]
−30°C
3
25°C
85°C
2.5
2
−20
−30
−40
1.5
1
0.86
−50
0.87
0.88
0.89
−60
0.9
Frequency [GHz]
Data Sheet
0
2
4
6
8
10
Frequency [GHz]
17
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured Performance Low Band Mid Gain Mode vs. Frequency
Matching |S11| = f( f ), |S22| = f( f )
Reverse Isolation |S12| = f( f )
0
0
−5
−10
−20
S
|S12| [dB]
|S11|, |S22| [dB]
−10
11
−15
−30
S
22
−20
−40
−25
−50
−30
−35
0.86
0.87
0.88
0.89
−60
0.9
0
Frequency [GHz]
2
4
6
8
10
Frequency [GHz]
Noise Figure NF = f( f )
Input Compression P1dB = f( f )
3.5
−8
3.3
−9
3.1
−10
P1dB [dBm]
NF [dB]
2.9
2.7
2.5
2.3
2.1
−11
−12
−13
1.9
−14
1.7
1.5
0.86
0.87
0.88
0.89
−15
0.86
0.9
Frequency [GHz]
Data Sheet
0.87
0.88
0.89
0.9
Frequency [GHz]
18
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured Performance Low Band Mid Gain Mode vs. Temperature
2.15
Measured Performance Low Band Mid Gain Mode vs. Temperature
VCC = 2.8 V, VGS1 = 2.8 V, VGS2 = 2.8 V, VEN1 = 0 V, VEN2 = 2.8 V, RREF = 8.2 kΩ
Power Gain |S21| = f(TA)
Supply Current ICC = f(TA)
5
7
4.5
6.5
3.5
6
3
ICC [mA]
Power Gain [dB]
4
2.5
2
5.5
5
1.5
1
4.5
0.5
0
−40
−20
0
20
40
60
80
4
−40
100
−20
0
TA [°C]
20
40
60
80
100
60
80
100
TA [°C]
Noise Figure NF = f(TA)
Input Compression P1dB = f(TA)
3.5
−5
3.3
−7
3.1
−9
P1dB [dBm]
NF [dB]
2.9
2.7
2.5
2.3
−11
−13
2.1
1.9
−15
1.7
1.5
−40
−20
0
20
40
60
80
−17
−40
100
T [°C]
Data Sheet
−20
0
20
40
T [°C]
A
A
19
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured Performance Low Band Low Gain Mode vs. Frequency
2.16
Measured Performance Low Band Low Gain Mode vs. Frequency
TA = 25 °C, VCC = 2.8 V, VGS1 = 0 V, VGS2 = 0 V, VEN1 = 0 V, VEN2 = 2.8 V, RREF = 8.2 kΩ
Power Gain |S21| = f( f )
Power Gain Wideband |S21| = f( f )
−7
0
−7.5
−10
−20
Power Gain [dB]
Power Gain [dB]
−8
−8.5
−30°C, 25°C
−9
85°C
−9.5
−40
−50
−10
−60
−10.5
−11
0.86
−30
0.87
0.88
0.89
−70
0.9
0
2
Frequency [GHz]
4
6
8
10
8
10
Frequency [GHz]
Matching |S11| = f( f ), |S22| = f( f )
Reverse Isolation |S12| = f( f )
0
0
−5
−10
S
11
−20
|S12| [dB]
|S11|, |S22| [dB]
−10
−15
−30
S22
−20
−40
−25
−50
−30
−35
0.86
0.87
0.88
0.89
−60
0.9
Frequency [GHz]
Data Sheet
0
2
4
6
Frequency [GHz]
20
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured Performance Low Band Low Gain Mode vs. Temperature
Input Compression P1dB = f( f )
11
−5
10.5
−6
10
−7
9.5
−8
P1dB [dBm]
NF [dB]
Noise Figure NF = f( f )
9
8.5
−9
−10
8
−11
7.5
−12
7
0.86
0.87
0.88
0.89
−13
0.86
0.9
0.87
Frequency [GHz]
2.17
0.88
0.89
0.9
Frequency [GHz]
Measured Performance Low Band Low Gain Mode vs. Temperature
VCC = 2.8 V, VGS1 = 0 V, VGS2 = 0 V, VEN1 = 0 V, VEN2 = 2.8 V, RREF = 8.2 kΩ
Power Gain |S21| = f (TA)
Supply Current ICC = f (TA)
−7
1
−7.5
0.95
0.9
−8.5
ICC [mA]
Power Gain [dB]
−8
−9
0.85
−9.5
0.8
−10
0.75
−10.5
−11
−40
−20
0
20
40
60
80
0.7
−40
100
T [°C]
0
20
40
60
80
100
T [°C]
A
Data Sheet
−20
A
21
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured Performance Mid Band High Gain Mode vs. Frequency
Input Compression P1dB = f(TA)
11
−2
10.5
−4
10
−6
9.5
−8
P1dB [dBm]
NF [dB]
Noise Figure NF = f(TA)
9
8.5
−10
−12
8
−14
7.5
−16
7
−40
−20
0
20
40
60
80
−18
−40
100
−20
0
TA [°C]
2.18
20
40
60
80
100
TA [°C]
Measured Performance Mid Band High Gain Mode vs. Frequency
TA = 25 °C, VCC = 2.8 V, VGS1 = 2.8 V, VGS2 = 0 V, VEN1 = 2.8 V, VEN2 = 0 V, RREF = 8.2 kΩ
Power Gain |S21| = f( f )
Power Gain Wideband |S21| = f( f )
17
20
10
16.5
0
Power Gain [dB]
Power Gain [dB]
−30°C
16
25°C
15.5
85°C
15
−10
−20
−30
−40
14.5
14
1.93
−50
1.94
1.95
1.96
1.97
1.98
−60
1.99
Frequency [GHz]
Data Sheet
0
2
4
6
8
10
Frequency [GHz]
22
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured Performance Mid Band High Gain Mode vs. Frequency
Matching |S11| = f( f ), |S22| = f( f )
Reverse Isolation |S12| = f( f )
0
0
−5
−10
−20
S11
−15
|S12| [dB]
|S11|, |S22| [dB]
−10
−30
S22
−20
−40
−25
−50
−30
−35
1.93
1.94
1.95
1.96
1.97
1.98
−60
1.99
0
2
Frequency [GHz]
4
6
8
10
Frequency [GHz]
Noise Figure NF = f( f )
Input Compression P1dB = f( f )
1.7
−10
1.6
1.5
−11
1.4
P1dB [dBm]
NF [dB]
1.3
1.2
1.1
1
−12
−13
0.9
−14
0.8
0.7
0.6
1.93
1.94
1.95
1.96
1.97
1.98
−15
1.93
1.99
Frequency [GHz]
Data Sheet
1.94
1.95
1.96
1.97
1.98
1.99
Frequency [GHz]
23
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured Performance Mid Band High Gain Mode vs. Temperature
2.19
Measured Performance Mid Band High Gain Mode vs. Temperature
VCC = 2.8 V, VGS1 = 2.8 V, VGS2 = 0 V, VEN1 = 2.8 V, VEN2 = 0 V, RREF = 8.2 kΩ
Power Gain |S21| = f(TA)
Supply Current ICC = f(TA)
18
7
17.5
6.5
6
16.5
ICC [mA]
Power Gain [dB]
17
16
5.5
15.5
5
15
4.5
14.5
14
−40
−20
0
20
40
60
80
4
−40
100
−20
0
TA [°C]
20
40
60
80
100
60
80
100
TA [°C]
Noise Figure NF = f(TA)
Input Compression P1dB = f(TA)
1.7
−5
1.6
1.5
−7
1.4
P1dB [dBm]
NF [dB]
1.3
1.2
1.1
1
−9
−11
0.9
−13
0.8
0.7
0.6
−40
−20
0
20
40
60
80
−15
−40
100
T [°C]
Data Sheet
−20
0
20
40
T [°C]
A
A
24
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured Performance Mid Band Mid Gain Mode vs. Frequency
2.20
Measured Performance Mid Band Mid Gain Mode vs. Frequency
TA = 25 °C, VCC = 2.8 V, VGS1 = 2.8 V, VGS2 = 2.8 V, VEN1 = 2.8 V, VEN2 = 0 V, RREF = 8.2 kΩ
Power Gain |S21| = f( f )
Power Gain Wideband |S21| = f( f )
4
10
0
3.5
−10
Power Gain [dB]
Power Gain [dB]
−30°C
3
25°C
2.5
2
85°C
−30
−40
1.5
1
1.93
−20
−50
1.94
1.95
1.96
1.97
1.98
−60
1.99
0
2
Frequency [GHz]
Matching |S11| = f( f ), |S22| = f( f )
6
8
10
8
10
Reverse Isolation |S12| = f( f )
0
0
−5
−10
−10
S11
−20
|S12| [dB]
|S11|, |S22| [dB]
4
Frequency [GHz]
−15
S22
−30
−20
−40
−25
−50
−30
−35
1.93
1.94
1.95
1.96
1.97
1.98
−60
1.99
Frequency [GHz]
Data Sheet
0
2
4
6
Frequency [GHz]
25
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured Performance Mid Band Mid Gain Mode vs. Temperature
Noise Figure NF = f( f )
Input Compression P1dB = f( f )
3.5
−8
3.3
−9
3.1
−10
P1dB [dBm]
NF [dB]
2.9
2.7
2.5
2.3
2.1
−11
−12
−13
1.9
−14
1.7
1.5
1.93
1.94
1.95
1.96
1.97
1.98
−15
1.93
1.99
1.94
Frequency [GHz]
2.21
1.95
1.96
1.97
1.98
1.99
Frequency [GHz]
Measured Performance Mid Band Mid Gain Mode vs. Temperature
VCC = 2.8 V, VGS1 = 2.8 V, VGS2 = 2.8 V, VEN1 = 2.8 V, VEN2 = 0 V, RREF = 8.2 kΩ
Power Gain |S21| = f(TA)
Supply Current ICC = f(TA)
5
7
4.5
6.5
3.5
6
3
ICC [mA]
Power Gain [dB]
4
2.5
2
5.5
5
1.5
1
4.5
0.5
0
−40
−20
0
20
40
60
80
4
−40
100
T [°C]
0
20
40
60
80
100
T [°C]
A
Data Sheet
−20
A
26
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured Performance Mid Band Low Gain Mode vs. Frequency
Noise Figure NF = f(TA)
Input Compression P1dB = f(TA)
3.5
−5
3.3
−7
3.1
−9
P1dB [dBm]
NF [dB]
2.9
2.7
2.5
2.3
−11
−13
2.1
1.9
−15
1.7
1.5
−40
−20
0
20
40
60
80
−17
−40
100
−20
0
TA [°C]
2.22
20
40
60
80
100
TA [°C]
Measured Performance Mid Band Low Gain Mode vs. Frequency
TA = 25 °C, VCC = 2.8 V, VGS1 = 0 V, VGS2 = 0 V, VEN1 = 2.8 V, VEN2 = 0 V, RREF = 8.2 kΩ
Power Gain |S21| = f( f )
Power Gain Wideband |S21| = f( f )
−6
0
−6.5
−10
−20
−7.5
Power Gain [dB]
Power Gain [dB]
−7
−30°C
25°C
−8
85°C
−8.5
−60
−9.5
1.94
1.95
1.96
1.97
1.98
−70
1.99
Frequency [GHz]
Data Sheet
−40
−50
−9
−10
1.93
−30
0
2
4
6
8
10
Frequency [GHz]
27
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured Performance Mid Band Low Gain Mode vs. Frequency
Matching |S11| = f( f ), |S22| = f( f )
Reverse Isolation |S12| = f( f )
0
0
−5
−10
S11
−20
|S12| [dB]
|S11|, |S22| [dB]
−10
−15
−30
S
22
−20
−40
−25
−50
−30
−35
1.93
1.94
1.95
1.96
1.97
1.98
−60
1.99
0
2
Frequency [GHz]
10
−5
9.5
−6
9
−7
8.5
−8
8
7.5
6.5
−12
1.96
1.97
1.98
−13
1.93
1.99
Frequency [GHz]
Data Sheet
10
−10
−11
1.95
8
−9
7
1.94
6
Input Compression P1dB = f( f )
P1dB [dBm]
NF [dB]
Noise Figure NF = f( f )
6
1.93
4
Frequency [GHz]
1.94
1.95
1.96
1.97
1.98
1.99
Frequency [GHz]
28
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured Performance Mid Band Low Gain Mode vs. Temperature
2.23
Measured Performance Mid Band Low Gain Mode vs. Temperature
VCC = 2.8 V, VGS1 = 0 V, VGS2 = 0 V, VEN1 = 2.8 V, VEN2 = 0 V, RREF = 8.2 kΩ
Power Gain |S21| = f(TA)
Supply Current ICC = f(TA)
−6
1
−6.5
0.95
0.9
−7.5
ICC [mA]
Power Gain [dB]
−7
−8
0.85
−8.5
0.8
−9
0.75
−9.5
−10
−40
−20
0
20
40
60
80
0.7
−40
100
−20
0
TA [°C]
9.5
−4
9
−6
8.5
−8
P1dB [dBm]
NF [dB]
−2
8
7.5
100
60
80
100
−12
−14
6.5
−16
20
40
60
80
−18
−40
100
T [°C]
−20
0
20
40
T [°C]
A
Data Sheet
80
−10
7
0
60
Input Compression P1dB = f(TA)
10
−20
40
TA [°C]
Noise Figure NF = f(TA)
6
−40
20
A
29
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured Performance High Band High Gain Mode vs. Frequency
2.24
Measured Performance High Band High Gain Mode vs. Frequency
TA = 25 °C, VCC = 2.8 V, VGS1 = 2.8 V, VGS2 = 0 V, VEN1 = 2.8 V, VEN2 = 2.8 V, RREF = 8.2 kΩ
Power Gain |S21| = f( f )
Power Gain Wideband |S21| = f( f )
17
20
10
16.5
−30°C
0
Power Gain [dB]
Power Gain [dB]
25°C
16
85°C
15.5
15
−10
−20
−30
−40
14.5
14
2.11
−50
2.12
2.13
2.14
2.15
2.16
−60
2.17
0
2
Frequency [GHz]
Matching |S11| = f( f ), |S22| = f( f )
6
8
10
8
10
Reverse Isolation |S12| = f( f )
0
0
−5
−10
−10
S
−20
11
|S12| [dB]
|S11|, |S22| [dB]
4
Frequency [GHz]
−15
−30
S22
−20
−40
−25
−50
−30
−35
2.11
2.12
2.13
2.14
2.15
2.16
−60
2.17
Frequency [GHz]
Data Sheet
0
2
4
6
Frequency [GHz]
30
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured Performance High Band High Gain Mode vs. Temperature
Noise Figure NF = f( f )
Input Compression P1dB = f( f )
1.7
−10
1.6
1.5
−11
1.4
P1dB [dBm]
NF [dB]
1.3
1.2
1.1
1
−12
−13
0.9
−14
0.8
0.7
0.6
2.11
2.12
2.13
2.14
2.15
2.16
−15
2.11
2.17
2.12
Frequency [GHz]
2.25
2.13
2.14
2.15
2.16
2.17
Frequency [GHz]
Measured Performance High Band High Gain Mode vs. Temperature
VCC = 2.8 V, VGS1 = 2.8 V, VGS2 = 0 V, VEN1 = 2.8 V, VEN2 = 2.8 V, RREF = 8.2 kΩ
Power Gain |S21| = f(TA)
Supply Current ICC = f(TA)
18
7
17.5
6.5
6
16.5
ICC [mA]
Power Gain [dB]
17
16
5.5
15.5
5
15
4.5
14.5
14
−40
−20
0
20
40
60
80
4
−40
100
T [°C]
0
20
40
60
80
100
T [°C]
A
Data Sheet
−20
A
31
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured Performance High Band Mid Gain Mode vs. Frequency
Noise Figure NF = f(TA)
Input Compression P1dB = f(TA)
1.7
−5
1.6
1.5
−7
1.4
P1dB [dBm]
NF [dB]
1.3
1.2
1.1
1
−9
−11
0.9
−13
0.8
0.7
0.6
−40
−20
0
20
40
60
80
−15
−40
100
−20
0
TA [°C]
2.26
20
40
60
80
100
TA [°C]
Measured Performance High Band Mid Gain Mode vs. Frequency
TA = 25 °C, VCC = 2.8 V, VGS1 = 2.8 V, VGS2 = 2.8 V, VEN1 = 2.8 V, VEN2 = 2.8 V, RREF = 8.2 kΩ
Power Gain |S21| = f( f )
Power Gain Wideband |S21| = f( f )
4
10
0
3.5
Power Gain [dB]
Power Gain [dB]
−10
3
−30°C
2.5
25°C
2
1.5
−50
2.12
2.13
2.14
2.15
2.16
−60
2.17
Frequency [GHz]
Data Sheet
−30
−40
85°C
1
2.11
−20
0
2
4
6
8
10
Frequency [GHz]
32
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured Performance High Band Mid Gain Mode vs. Frequency
Matching |S11| = f( f ), |S22| = f( f )
Reverse Isolation |S12| = f( f )
0
0
−5
−10
−20
S11
−15
|S12| [dB]
|S11|, |S22| [dB]
−10
−30
S
22
−20
−40
−25
−50
−30
−35
2.11
2.12
2.13
2.14
2.15
2.16
−60
2.17
0
2
Frequency [GHz]
4
6
8
10
Frequency [GHz]
Noise Figure NF = f( f )
Input Compression P1dB = f( f )
3.5
−8
3.3
−9
3.1
−10
P1dB [dBm]
NF [dB]
2.9
2.7
2.5
2.3
2.1
−11
−12
−13
1.9
−14
1.7
1.5
2.11
2.12
2.13
2.14
2.15
2.16
−15
2.11
2.17
Frequency [GHz]
Data Sheet
2.12
2.13
2.14
2.15
2.16
2.17
Frequency [GHz]
33
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured Performance High Band Mid Gain Mode vs. Temperature
2.27
Measured Performance High Band Mid Gain Mode vs. Temperature
VCC = 2.8 V, VGS1 = 2.8 V, VGS2 = 2.8 V, VEN1 = 2.8 V, VEN2 = 2.8 V, RREF = 8.2 kΩ
Power Gain |S21| = f(TA)
Supply Current ICC = f(TA)
5
7
4.5
6.5
3.5
6
3
ICC [mA]
Power Gain [dB]
4
2.5
2
5.5
5
1.5
1
4.5
0.5
0
−40
−20
0
20
40
60
80
4
−40
100
−20
0
TA [°C]
20
40
60
80
100
60
80
100
TA [°C]
Noise Figure NF = f(TA)
Input Compression P1dB = f(TA)
3.5
−5
3.3
−7
3.1
−9
P1dB [dBm]
NF [dB]
2.9
2.7
2.5
2.3
−11
−13
2.1
1.9
−15
1.7
1.5
−40
−20
0
20
40
60
80
−17
−40
100
T [°C]
Data Sheet
−20
0
20
40
T [°C]
A
A
34
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured Performance High Band Low Gain Mode vs. Frequency
2.28
Measured Performance High Band Low Gain Mode vs. Frequency
TA = 25 °C, VCC = 2.8 V, VGS1 = 0 V, VGS2 = 0 V, VEN1 = 2.8 V, VEN2 = 2.8 V, RREF = 8.2 kΩ
Power Gain |S21| = f( f )
Power Gain Wideband |S21| = f( f )
−6
0
−6.5
−10
−20
Power Gain [dB]
Power Gain [dB]
−7
−7.5
−30°C
25°C
−8
85°C
−8.5
−40
−50
−9
−60
−9.5
−10
2.11
−30
2.12
2.13
2.14
2.15
2.16
−70
2.17
0
2
Frequency [GHz]
4
6
8
10
8
10
Frequency [GHz]
Matching |S11| = f( f ), |S22| = f( f )
Reverse Isolation |S12| = f( f )
0
0
−5
−10
S
11
−20
S
22
|S12| [dB]
|S11|, |S22| [dB]
−10
−15
−30
−20
−40
−25
−50
−30
−35
2.11
2.12
2.13
2.14
2.15
2.16
−60
2.17
Frequency [GHz]
Data Sheet
0
2
4
6
Frequency [GHz]
35
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured Performance High Band Low Gain Mode vs. Temperature
Input Compression P1dB = f( f )
10
−5
9.5
−6
9
−7
8.5
−8
P1dB [dBm]
NF [dB]
Noise Figure NF = f( f )
8
7.5
−9
−10
7
−11
6.5
−12
6
2.11
2.12
2.13
2.14
2.15
2.16
−13
2.11
2.17
2.12
2.13
Frequency [GHz]
2.29
2.14
2.15
2.16
2.17
Frequency [GHz]
Measured Performance High Band Low Gain Mode vs. Temperature
VCC = 2.8 V, VGS1 = 0 V, VGS2 = 0 V, VEN1 = 2.8 V, VEN2 = 2.8 V, RREF = 8.2 kΩ
Power Gain |S21| = f(TA)
Supply Current ICC = f(TA)
−6
1
−6.5
0.95
0.9
−7.5
ICC [mA]
Power Gain [dB]
−7
−8
0.85
−8.5
0.8
−9
0.75
−9.5
−10
−40
−20
0
20
40
60
80
0.7
−40
100
T [°C]
0
20
40
60
80
100
T [°C]
A
Data Sheet
−20
A
36
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Electrical Characteristics
Measured Performance High Band Low Gain Mode vs. Temperature
Input Compression P1dB = f(TA)
10
−2
9.5
−4
9
−6
8.5
−8
P1dB [dBm]
NF [dB]
Noise Figure NF = f(TA)
8
7.5
−10
−12
7
−14
6.5
−16
6
−40
−20
0
20
40
60
80
−18
−40
100
TA [°C]
Data Sheet
−20
0
20
40
60
80
100
TA [°C]
37
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Application Circuit and Block Diagram
UMTS bands I, II and V Application Circuit Schematic
3
Application Circuit and Block Diagram
3.1
UMTS bands I, II and V Application Circuit Schematic
C7
100nF
VCC = 2.8 V
VGS = 0 / 2.8 V
VGS = 0 / 2.8 V
0 GND
5 n/c
RFIN
1900 MHz
RFIN
2100 MHz
C1
39 pF
4 RFGNDH
3 VCC
2 VGS 1 VGS 2 1
C2
8.2pF
6
L1 L1
RFINM
4.7 nH 3.9
C3
18 pF
16
RFOUTM
C4
22 pF
L2
3.9 nH
7
RFINH
15
RFOUTH
8
RFGNDM
9 n/c
RFIN
800 MHz
C5
3.0pF
14
RFOUTL
Biasing & Logic
Circuitry
10 RFINL
11 VEN 2
12 VEN1 RREF 13
C6
39pF
L3
8.2nH
VEN = 0 / 2.8 V
RFOUT
1900 MHz
RFOUT
2100 MHz
RFOUT
800 MHz
RREF
8 .2 kΩ
VEN = 0 / 2.8 V
BGA736 L16 _Appl_ T_071210 .vsd
Figure 2
Application circuit with chip outline (top view)
Note: Package paddle (Pin 0) has to be RF grounded.
Table 13
Parts List
Part Number
Part Type
Manufacturer
Size
Comment
L1...L3
Chip inductor
Various
0402
Wirewound, Q ≈ 50
C1...C7
Chip capacitor
Various
0402
RREF
Chip resistor
Various
0402
Data Sheet
38
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Application Circuit and Block Diagram
UMTS bands I, IV and VIII Application Circuit Schematic
3.2
UMTS bands I, IV and VIII Application Circuit Schematic
C7
100nF
0 GND
5 n/c
RFIN
2100 MHz
RFIN
2100 MHz
C1
18pF
C3
18 pF
VCC = 2.8 V
4 RFGNDH
VGS = 0 / 2.8 V
VGS = 0 / 2.8 V
3 VCC
2 VGS1 VGS 2 1
L4
2.9nH
C2
6.8 pF
6
L1 L1
RFINM
3.4nH 3. nH
C4
22 pF
7
L2
RFINH
3.9 nH
RFOUT
2100 MHz
16
RFOUTM
RFOUT
2100 MHz
15
RFOUTH
L5
3.9nH
8
RFGNDM
9 n/c
RFIN
900 MHz
C5
3 .0pF
RFOUT
900 MHz
14
Biasing & Logic
Circuitry
10 RFINL
11 VEN2
RFOUTL
12 VEN1 RREF 13
R REF
8.2 kΩ
C6
39 pF
VEN = 0 / 2.8 V
L3
7 .3nH
VEN = 0 / 2.8 V
BGA736 L16_ Appl_Bands _IV_VIII.vsd
Figure 3
Application circuit with chip outline (top view)
Note: Package paddle (Pin 0) has to be RF grounded.
Table 14
Parts List
Part Number
Part Type
Manufacturer
Size
Comment
L1...L5
Chip inductor
Various
0402
Wirewound, Q ≈ 50
C1...C7
Chip capacitor
Various
0402
RREF
Chip resistor
Various
0402
Data Sheet
39
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Application Circuit and Block Diagram
Pin Definition
3.3
Pin Definition
Table 15
Pin Definition and Function
Pin Number
Symbol
Function
0
GND
Ground connection for low band (800/900 MHz) LNA and control
circuity (package paddle)
1
VGS2
Gain step control
2
VGS1
Gain step control
3
VCC
Supply voltage
4
RFGNDH
High band (2100 MHz) LNA RF ground
5
n/c
Not connected
6
RFINM
Mid band (1900/2100 MHz) LNA input
7
RFINH
High band (2100 MHz) LNA input
8
RFGNDM
Mid band (1900/2100 MHz) LNA RF ground
9
n/c
Not connected
10
RFINL
Low band (800/900 MHz) LNA input
11
VEN2
Band select control
12
VEN1
Band select control
13
RREF
Bias current reference resistor (high / mid gain mode)
14
RFOUTL
Low band (800/900 MHz) LNA output
15
RFOUTH
High band (2100 MHz) LNA output
16
RFOUTM
Mid band (1900/2100 MHz) LNA output
Data Sheet
40
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Application Circuit and Block Diagram
Application Board
3.4
Application Board
7RS/D\HUWRSYLHZ
0LGGOH/D\HUWRSYLHZ
%RWWRP/D\HUWRSYLHZ
%*$/B$SSB%RDUGYVG
Figure 4
Application board layout on 3-layer FR4. Top layer thickness: 0.2 mm, bottom layer thickness:
0.8 mm, 35 µm Cu metallization, gold plated. Board size: 20 x 50 mm
PP&RSSHU
PP3UHSUHJ)5
PP3UHSUHJ)5
PP&RSSHU
PP)5
PP3UHSUHJ)5
PP3UHSUHJ)5
PP&RSSHU
%*$/B&URVVB6HFWLRQB9LHZYVG
Figure 5
Data Sheet
Cross-section view of application board
41
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Application Circuit and Block Diagram
5),1+
*1'
5)2870
5)287+
5)287/
(1
(1
5),1/
5)*1'0
*6
*6
9&&
55()
5),10
5)*1'+
Application Board
%*$/B$SSB%RDUGBH[DFWYVG
Figure 6
Detail of application board layout
Note: In order to achieve the same performance as given in this datasheet please follow the suggested PCB-layout
as closely as possible. The position of the GND vias is critical for RF performance.
Data Sheet
42
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Physical Characteristics
Package Footprint
4
Physical Characteristics
4.1
Package Footprint
NSMD
0.55
1.25
0.3
0.2
0.3
0.2
0.3
0.2
0.3
Stencil apertures
Solder mask
SMD - V1
SMD - V2 (e.g. BGA734L16)
0.55
0.35
0.225
0.55
0.2
0.3
0.3
0.3
Copper
0.15
2.3
0.15
2.3
1.25
0.35
0.225
0.2
0.3
0.3
0.2
0.3
Copper
0.2
0.3
0.2
1.25
0.3
2.3
2.3
0.2
0.3
0.075
0.275
0.225
1.25
0.225
0.2
0.3
0.2
0.3
0.2
Solder mask
0.2
0.3
0.3
0.3
0.2
0.3
0.2
0.3
0.2
Vias top to first inner layer
TSLP-16-1-FP V01
Figure 7
Data Sheet
Recommended footprint and stencil layout for the TSLP-16-1 package. SMD - V2 footprint is
used on IFX application board
43
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Physical Characteristics
Package Dimensions
4.2
Package Dimensions
Top view
Bottom view
2.3 ±0.05
0.39 +0.01
-0.03
2 ±0.05
0.05 MAX.
1±0.05
9
10
11
12
15
6
16
4
3
2
1
1 6 x 0.2 ±0.035
1) Dimension applies to plated terminals
Data Sheet
14
1.4 ±0.035 1)
7
5
Pin 1 marking
Figure 8
8
0 . 0 5 x 45˚
1 6 x 0.2 ±0.035
2.3 ±0.05
2 ±0.05
1.4 ±0.035
1±0.05
13
TSLP-16-1-PO V02
Package outline (top, side and bottom view)
44
V2.1, 2008-07-03
www.infineon.com
Published by Infineon Technologies AG