F235
MMIC
Product Description
F235 is a high performance InGaP HBT MMIC amplifier
utilizing a Darlington configuration with an active bias
network. The active bias network provides stable current
over temperature and process Beta variations. Designed
to run directly from a 5V supply, the F235 does not
require a dropping resistor as compared to typical
Darlington amplifiers. The F235 product is designed for
high linearity 5V gain block applications that require
small size and minimal external components.
F235
56G
Hz
Cascadable
0.0
0.055-6G
6GHz
Hz，Cascadable
Active Bias InGaP/GaAs HBT Amplifier
Product Features
Features::
•Wideband Flat Gain to 4GHz
38
dBm @ 1950
MHz
•IP3=
IP3=38
38dBm
1950MHz
•P1dB=
20.5
dBm@
19
50MHz
P1dB=20.5
20.5dBm@
dBm@19
1950MHz
•Single +5V Supply
Class 1C
•1000V ESD
ESD，Class
•MSL 1 moisture rating
Applications
Applications::
• IF & Driver Amplifier
• Cellular, PCS, GSM, UMTS
• Wireless Data, Satellite Terminals
Symbol
G
P1dB
OIP3
Bandwidth
Input VSWR
Output VSWR
Parameter
Units
Frequency
Min.
Typ.
Max.
dB
240MHz
850MHz
1950MHz
2500MHz
19.3
19.3
18.5
18.0
21.0
20.8
20.0
19.5
22.2
22.2
21.5
21.0
dBm
850MHz
1950MHz
19.0
20.5
20.5
Third Order Intercept Point
dBm
240MHz
850MHz
1950MHz
VSWR: Maximum 2.0
MHz
Input Return Loss
Ratio
1950MHz
1.3
Output Return Loss
Ratio
1950MHz
1.6
Small Signal Gain
Output Power at 1dB
Compression
38.0
40.0
38.0
4000
S12
Reverse Isolation
dB
1950MHz
23.1
NF
Noise Figure
dB
1950MHz
2.8
4.0
VD
Device Operating Voltage
V
5.0
5.5
ID
Device Operating Current
mA
73
83
RTH, j-l
Thermal Resistance
℃/W
Test Conditions：Vs＝5V ID＝73mA Typ. OIP3 Tone Spacing=1MHz,
TL=25℃
ZS=ZL=50 Ohms
63
68
Pout per ton=5 dBm
2012-Feb
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F235
MMIC
Typical RF Performance at Key Operating Frequencies (With 50~500M
Hz Application Circuit)
50~500MHz
MHz
Frequency
Frequency（MHz
MHz）
Symbol
Parameter
Unit
50
110
240
400
500
850
G
Small Signal Gain
dB
21.5
21.4
21.3
21.2
21.1
20.8
OIP3
Output Third Order
Intercept Point
dBm
37.5
38.0
38.0
40.0
40.5
40.0
P1dB
Output Power at
1dB Compression
dBm
19.5
21.0
21.0
21.0
20.8
20.6
Input VSWR
Input Return Loss
1.32
1.25
1.14
1.21
1.22
1.15
Output Return Loss
1.40
1.30
1.20
1.15
1.10
1.20
Output VSWR
S12
Reverse Isolation
dB
24
24
24
24
24
23.3
NF
Noise Figure
dB
3.1
2.8
2.8
2.8
2.8
2.8
Test Conditions：Vs＝5V ID＝73mA Typ
TL=25℃
ZS=ZL=50 Ohms
OIP3 Tone Spacing=1MHz,
Pout per ton=5 dBm
Hz Application Circuit
Data on Charts taken with 50~500M
50~500MHz
2012-Feb
www.oei-semiconductor.com
F235
MMIC
Typical RF Performance at Key Operating Frequencies
Symbol
Parameter
Hz Application Circuit)
(With 0.5~3.5G
0.5~3.5GHz
MHz
Frequency
Frequency（MHz
MHz）
Unit
500
850
1950
2500
3500
4000
G
Small Signal Gain
dB
21.1
20.8
19.9
19.4
18.9
17.8
OIP3
Output Third Order
Intercept Point
dBm
40.5
40.0
38.0
35.0
31.0
27.0
P1dB
Output Power at
1dB Compression
dBm
20.8
20.6
20.4
20.0
16.7
15.2
Input VSWR
Input Return Loss
1.22
1.15
1.24
1.21
1.17
1.44
Output Return Loss
1.10
1.20
1.60
1.59
1.39
1.64
Output VSWR
S12
Reverse Isolation
dB
24.2
23.3
23.1
22.8
21.2
22
NF
Noise Figure
dB
2.8
2.8
2.8
3.0
3.1
3.4
Test Conditions：Vs＝5V ID＝73mA Typ
TL=25℃
ZS=ZL=50 Ohms
OIP3 Tone Spacing=1MHz,
Pout per ton=5 dBm
Data on Charts taken with 0.5~3.5 GHz Application Circuit
2012-Feb
www.oei-semiconductor.com
F235
MMIC
2012-Feb
www.oei-semiconductor.com
F235
Pin
Function
1
RF IN
2，4
GND
Description
MMIC
Marking and Pin Definition
RF input pin. This pin requires an
external DC blocking capacitor.
Connecting to ground. Use via
holes for best performance to
reduce lead inductance.
3
RF OUT /
BIAS
RF output and bias pin. DC
blocking capacitor is necessary for
proper operating.
Application Schematic
Serial number
Application Circuit Element Values
Frequency
GHz
Frequency（G
Hz）
Reference
Designator
0.05-0.5
0.5
0.5--3.5
CB
8200 pF
68 pF
LC
1200 nH
82 nH
ESD Class 1C
Appropriate precautions
in handing , packaging
and testing devices must
be observed！
Mounting Instructions
1. Solder the copper pad on the backside of the
device package to the ground plane.
2. Use a large ground pad area with many plated
through-holes.
3. Measurement for this data sheet is made on 0.5
mm thick FR-4 board with 3.38 dielectric constant.
Evaluation Board Layout
Moisture Sensitivity Level Rating
Rating::
Level 1
Absolute Maximum Ratings
Parameter
Absolute Limit
Max. Dvice Current (ID)
Max. Device Voltage (VD)
Max. RF Input Power
110 mA
6.0V
+12 dBm
Max. Junction Temp. (TJ)
+150℃
Max.
Power
0.66 W
Operating
Dissipated
Operating Temp. Range (TL)
Max. Storage Temp.
-40℃ to +85℃
+150℃
Operation beyond any one of these limits may
cause permanent damage.
2012-Feb
www.oei-semiconductor.com
F235
SOT89 Packaging and PCB Pad Layout
Symbol
inch
millimeter
A
0.016
0.42
B
0.019
0.5
MMIC
Units：inch [millimeter]
2012-Feb
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