SGA-6386(Z)
SGA-6386(Z)
DC to
5000MHz,
Cascadable
SiGe HBT
MMIC Amplifier
DC to 5000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)
Package: SOT-86
Product Description
Features
The SGA-6386 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
GaAs HBT
0
-10
ORL
10
-20
TL=+25ºC
IRL
5
GaAs pHEMT
Si CMOS
-30
0
Si BJT
Return Loss (dB)
15
SiGe HBT
„
GAIN
Gain (dB)
9
„
„
VD= 4.9 V, ID= 80 mA (Typ.)
GaAs MESFET
Si BiCMOS
„
Gain & Return Loss vs. Frequency
20
SiGe BiCMOS
„
Broadband Operation: DC to
5000MHz
Cascadable 50Ω
Operates from Single Supply
Low Thermal Resistance
Package
Applications
Optimum Technology
Matching® Applied
InGaP HBT
„
„
„
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
-40
0
1
GaN HEMT
2
3
Frequency (GHz)
4
5
RF MEMS
Parameter
Small Signal Gain
Min.
14.0
Output Power at 1dB Compression
Output Third Intercept Point
Specification
Typ.
15.4
13.5
12.5
21.0
19.0
36.0
34.0
5000
Max.
16.9
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
MHz
Condition
850MHz
1950MHz
2400MHz
850MHz
1950MHz
850MHz
1950MHz
>10dB
Bandwidth Determined by Return
Loss
Input Return Loss
26.7
dB
1950MHz
Output Return Loss
16.2
dB
1950MHz
Noise Figure
4.0
dB
1950MHz
Device Operating Voltage
4.6
4.9
5.4
V
Device Operating Current
72
80
88
mA
Thermal Resistance
97
°C/W
(Junction - Lead)
Test Conditions: VS =8V, ID =80mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS =39Ω, TL =25°C, ZS =ZL =50Ω
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
EDS-100614 Rev G
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6
SGA-6386(Z)
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)
160
mA
Max Device Voltage (VD)
7
V
Max RF Input Power
+18
dBm
Max Junction Temp (TJ)
+150
°C
-40 to +85
°C
+150
°C
Operating Temp Range (TL)
Max Storage Temp
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD <(TJ -TL)/RTH, j-l
Typical Performance at Key Operating Frequencies
Parameter
Unit
100
MHz
500
MHz
850
MHz
1950
MHz
Small Signal Gain
dB
15.9
15.5
15.4
13.5
Output Third Order Intercept Point
dBm
37.1
37.1
36.0
34.0
Output Power at 1dB Compression
dBm
20.2
20.5
21.0
19.0
Input Return Loss
dB
23.8
23.9
25.6
26.7
Output Return Loss
dB
13.2
14.5
16.6
16.2
Reverse Isolation
dB
20.0
20.2
20.4
19.9
Noise Figure
dB
3.7
3.4
3.6
4.0
Test Conditions: VS =8V, ID =80mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=39Ω, TL =25°C, ZS =ZL =50Ω
40
22
36
20
P1dB(dBm)
OIP3(dBm)
12.5
32.2
18.6
20.4
15.1
19.2
4.2
10.7
27.9
16.3
16.0
14.2
17.2
4.6
VD= 4.9 v, ID= 80 mA
VD= 4.9 V, ID= 80 mA
32
28
+25°C
TL
3500
MHz
P1dB vs. Frequency
OIP3 vs. Frequency
24
2400
MHz
18
16
+25°C
TL
14
-40°C
+85°C
-40°C
+85°C
20
12
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.5
1.0
Frequency (GHz)
1.5
2.0
2.5
3.0
3.5
Frequency (GHz)
Noise Figure vs. Frequency
VD= 4.9 V, ID= 80 mA
Noise Figure (dB)
7
6
TL=+25ºC
5
4
TL=+25ºC
3
2
0
2 of 6
1
2
Frequency (GHz)
3
4
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
EDS-100614 Rev G
SGA-6386(Z)
|S21| vs. Frequency
|S11| vs. Frequency
20
0
15
-10
|S11| (dB)
|S21| (dB)
VD= 4.9 V, ID= 80 mA
10
5
0
0
1
2
3
Frequency (GHz)
4
-20
-30
+25°C
-40°C
+85°C
TL
VD= 4.9 V, ID= 80 mA
-40
5
0
1
VD= 4.9 V, ID= 80 mA
5
-10
|S22| (dB)
|S12| (dB)
4
VD= 4.9 V, ID= 80 mA
0
-15
-20
-25
-30
0
1
2
3
Frequency (GHz)
4
+25°C
-40°C
+85°C
TL
-40
5
0
VD vs. ID over Temperature for fixed
VS= 8 V, RBIAS= 39 ohms *
95
-20
-30
+25°C
-40°C
+85°C
TL
1
2
3
Frequency (GHz)
4
5
VD vs. Temperature for Constant ID = 80 mA
5.5
90
5.3
+85°C
80
VD(Volts)
85
ID(mA)
2
3
Frequency (GHz)
|S22| vs. Frequency
|S12| vs. Frequency
-10
+25°C
-40°C
+85°C
TL
+25°C
75
-40°C
5.1
4.9
4.7
70
4.5
65
4.5
4.7
4.9
VD(Volts)
5.1
5.3
-40
-15
10
35
Temperature(°C)
60
85
* Note: In the applications circuit on page 4, RBIAS compensates for voltage and current variation over temperature.
EDS-100614 Rev G
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 6
SGA-6386(Z)
Pin
1
2, 4
Function
RF IN
GND
3
RF OUT/BIAS
Description
RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation.
Connection to ground. For optimum RF performance use via holes as close to ground leads as possible to reduce lead
inductance.
RF output and bias pin. DC voltage is present on this pin, therefore a DC-blocking capacitor is necessary for proper operation.
Application Schematic
pp
Frequency (Mhz)
VS
R BIAS
1 uF
CD
1000
pF
LC
1 SGA-6386 3
CB
500
850
1950
2400
3500
CB
220 pF
100 pF
68 pF
56 pF
39 pF
CD
100 pF
68 pF
22 pF
22 pF
15 pF
LC
68 nH
33 nH
22 nH
18 nH
15 nH
Recommended Bias Resistor Values for ID=80mA
RBIAS=( VS-VD ) / ID
4
RF in
Reference
Designator
RF out
CB
2
Supply Voltage(VS)
RBIAS
6V
13
8V
39
10 V
12 V
62
91
Note: RBIAS provides DC bias stability over temperature.
Evaluation Board Layout
VS
1 uF
RBIAS
1000 pF
CD
A63
CB
LC
Mounting Instructions
1. Use a large ground pad area under device pins 2
and 4 with many plated through-holes as shown.
CB
3. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
4 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
EDS-100614 Rev G
SGA-6386(Z)
Suggested Pad Layout
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
EDS-100614 Rev G
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 6
SGA-6386(Z)
Part Identification
3
4
A63
3
2
4
1
63Z
2
1
Ordering Information
6 of 6
Part Number
Reel Size
Devices/Reel
SGA-6386
13"
3000
SGA-6386Z
13"
3000
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
EDS-100614 Rev G