SGA-3486(Z) SGA-3486(Z) DC to 5000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-86 Product Description Features The SGA-3486 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. 24 GaAs MESFET GAIN InGaP HBT 18 Gain (dB) 9 -10 IRL 12 -20 ORL 6 GaAs pHEMT Si CMOS 0 -30 0 Si BJT Return Loss (dB) GaAs HBT SiGe HBT Gain & Return Loss vs. Frequency VD= 2.9 V, ID= 35 mA (Typ.) Si BiCMOS High Gain: 18.0dB at 1950MHz Cascadable 50Ω Operates from Single Supply Low Thermal Resistance Package Applications Optimum Technology Matching® Applied SiGe BiCMOS PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite -40 0 1 GaN HEMT 2 3 Frequency (GHz) 4 5 RF MEMS Parameter Small Signal Gain Min. 19.0 Output Power at 1dB Compression Output Third Intercept Point Bandwidth Determined by Return Loss Input Return Loss Output Return Loss Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (Junction - Lead) 2.6 31 Specification Typ. 21.0 18.0 16.5 12.7 12.5 24.6 26.9 5000 12.2 16.3 3.2 2.9 35 97 Max. 23.0 3.2 39 Unit Condition dB dB dB dBm dBm dBm dBm MHz 850MHz 1950MHz 2400MHz 850MHz 1950MHz 850MHz 1950MHz >8dB dB dB dB V mA °C/W 1950MHz 1950MHz 1950MHz RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. EDS-100635 Rev G 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 6 SGA-3486(Z) Absolute Maximum Ratings Parameter Rating Unit Max Device Current (ID) 70 mA Max Device Voltage (VD) 4 V Max RF Input Power +18 dBm Max Junction Temp (TJ) +150 °C -40 to +85 °C +150 °C Operating Temp Range (TL) Max Storage Temp Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l Typical Performance at Key Operating Frequencies Parameter Unit The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 100 MHz 500 MHz 850 MHz 1950 MHz Small Signal Gain dB 23.2 22.4 21.0 18.0 Output Third Order Intercept Point dBm 25.4 24.6 26.9 Output Power at 1dB Compression dBm 12.3 12.7 12.5 Input Return Loss dB 29.2 15.7 12.9 12.2 Output Return Loss dB 27.2 20.4 18.1 16.3 Reverse Isolation dB 24.9 24.8 24.4 22.9 Noise Figure dB 2.8 2.8 3.2 Test Conditions: VS =5V, ID =35mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, RBIAS=62Ω, TL =25°C, ZS =ZL =50Ω OIP3 vs. Frequency P1dB vs. Frequency VD= 2.9 V, ID= 35 mA (Typ.) VD= 2.9 V, ID= 35 mA (Typ.) 3500 MHz 16.5 28.1 12.4 10.8 16.1 22.2 3.4 14.2 9.4 16.1 19.9 15 35 13 P1dB (dBm) 30 OIP3 (dBm) 2400 MHz 25 20 11 9 7 TL=+25ºC TL=+25ºC 5 15 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 Noise Figure vs. Frequency VD= 2.9 V, ID= 35 mA (Typ.) Noise Figure (dB) 5 4 3 2 1 TL=+25ºC 0 0 2 of 6 0.5 1 1.5 2 Frequency (GHz) 2.5 3 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. EDS-100635 Rev G SGA-3486(Z) |S21| vs. Frequency |S11| vs. Frequency VD= 2.9 V, ID= 35 mA (Typ.) 24 18 -10 S11(dB) S21(dB) VD= 2.9 V, ID= 35 mA (Typ.) 0 12 6 0 0 1 2 3 Frequency (GHz) -30 +25°C -40°C +85°C TL 4 -20 -40 5 0 1 |S12| vs. Frequency 4 5 VD= 2.9 V, ID= 35 mA (Typ.) 0 -10 S22(dB) -15 S12(dB) 2 3 Frequency (GHz) |S22| vs. Frequency VD= 2.9 V, ID= 35 mA (Typ.) -10 +25°C -40°C +85°C TL -20 -25 -30 0 EDS-100635 Rev G 1 2 3 Frequency (GHz) -30 +25°C -40°C +85°C TL 4 -20 +25°C -40°C +85°C TL -40 5 0 1 2 3 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 4 5 3 of 6 SGA-3486(Z) Pin 1 2, 4 Function RF IN GND 3 RF OUT/BIAS Description RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation. Connection to ground. For optimum RF performance, use via holes as close to ground leads as possible to reduce lead inductance. RF output and bias pin. DC voltage is present on this pin, therefor a DC-blocking capacitor is necessary for proper operation. Application Schematic Frequency (Mhz) VS R BIAS 1 uF CD 1000 pF Reference Designator 500 850 1950 2400 3500 CB 220 pF 100 pF 68 pF 56 pF 39 pF CD 100 pF 68 pF 22 pF 22 pF 15 pF LC 68 nH 33 nH 22 nH 18 nH 15 nH LC Recommended Bias Resistor Values for ID=35mA RBIAS=( VS-VD ) / ID 4 1 SGA-3486 3 RF in CB RF out CB 2 Supply Voltage(VS) 5V RBIAS 68 8V 150 10 V 200 12 V 270 Note: RBIAS provides DC bias stability over temperature. Evaluation Board Layout VS 1 uF RBIAS 1000 pF CD A34 CB 4 of 6 LC CB Mounting Instructions 1. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown. 2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. EDS-100635 Rev G SGA-3486(Z) Suggested Pad Layout Package Drawing Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. EDS-100635 Rev G 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 6 SGA-3486(Z) Part Identification 3 4 A34 3 2 4 1 34Z 2 1 Ordering Information 6 of 6 Part Number Reel Size Devices/Reel SGA-3486 13" 3000 SGA-3486Z 13" 3000 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. EDS-100635 Rev G