IEEE INDUSTRY APPLICATIONS MAGAZINE • JULY|AUG. 2002 • WWW.IEEE.ORG/IAS
HYBRID POWER MODULES utilize a unique
INJECTION-MOLDED LEAD-FRAME DESIGN
and provide cost-effective integration of
power devices, gate drive, and protection.
26
HE USE OF INVERTERS IN APPLI-
There are several factors driving the expansion of
ANCE APPLICATIONS is increasing rap-
inverterized appliances in the United States. The primary
idly. Although the idea of inverterized
motivation for inverterized appliances is to conserve utili-
appliances is new for the United States, it is
ties. Environmental concerns and interests have become
not in other parts of the world. The charts in Fig. 1 show
more prevalent. The public is concerned about energy us-
T
age and water consumption. The gov-
the appliance market for air conditioners, refrigerators, washing machines,
BY JOHN DONLON,
ernment is pushing for efficiency in
and vacuums in North America and Ja-
JOANNE ACHHAMMER,
appliances that often make it necessary
pan. In Japan, 37% of the appliance
HIDEO IWAMOTO, &
to use inverters. Inverterized appli-
market is already inverterized, while
MITSUTAKA IWASAKI
ances mean increased efficiency, improved performance, and added value
less than 1% of the U.S. market is.
There is a great deal of potential for inverterized appliances
in the United States.
to the consumer.
The consumer will pay more for inverter features, but
The charts in Fig. 2 break down the Japanese appliance
not that much more. So, it is important that the cost of new
market specifically for air conditioners, washing machines,
inverterized appliances remains low. There are other re-
and refrigerators greater than 12 cubic ft. Over 80% of
quirements and challenges for appliance inverters. Appli-
their air conditioners and refrigerators, and nearly 40% of
ances are usually assembled in high volume, so the
Japan’s washing machines, are already inverterized. There-
manufacturing process must be as simple as possible; the
fore, there are good opportunities for inverters in all of
inverters must be easy to manufacture. Another inverter re-
these appliances in the U.S. as well.
quirement is small size. The addition of an inverter should
1077-2618/02/$17.00©2002 IEEE
not increase the size of the appliance.
Since there is limited heat sinking
available in appliances, high-efficiency inverters are required. High
reliability is also required. Adding
electronics should not degrade the
equipment; ideally, inverters should
make it more reliable. Also, inverters
should not adversely affect the life
span; there must be no reduction in
expected service life. These are the
basic issues for inverterized appliance applications.
The DIP-IPM Concept
The DIP-IPM concept evolved
from conventional IPMs. IPMs
containing power semiconductors
5,900 k
1,700 k
Data Based on SY00
Japanese appliance market.
Data Based on SY00
2,650 k
Data Based on FY00
IEEE INDUSTRY APPLICATIONS MAGAZINE • JULY|AUG. 2002 • WWW.IEEE.ORG/IAS
along with gate-driving integrated
circuits (ICs) and protection funcCOMPARED TO
tions have been widely accepted for
general-purpose and high-perforDISCRETE
mance industrial motor drive applications ranging from 200 W to more
SEMICONDUCTORS,
than 150 kW [1], [2], [4]. The success of these modules is the direct reINTEGRATED
sult of advantages gained through
MODULES OFFER
increased integration. Some of these
advantages include
LOWER SYSTEM
■ reduced design time and improved reliability offered by the
COST, IMPROVED
factory-tested, built-in gate
drive and protection functions
Inverters in Appliances
MANUFACTURABILITY,
Effective utilization of ac and
■ lower losses resulting from sibrushless dc motors in appliance apmultaneous optimization of
AND INCREASED
power chips and protection
plications requires motor control that
functions
cost effectively meets stringent perRELIABILITY.
formance, efficiency, reliability, and
■ smaller size resulting from the
size requirements. Currently, most
use of bare power die and consmall motor controls utilize discrete
trol chips
power semiconductors in TO-220 or TO-247 packages
■ improved manufacturability resulting from lower
along with high-voltage integrated circuits (HVICs) for
external component count and isolated heat sink
their power stage. There are several deficiencies in this apmounting surface.
proach. Manufacturing costs associated with mounting and
isolating multiple high-voltage discrete components are
Inverter
Noninverter
significant. Relatively large and complex printed circuit designs are required to meet all of the spacing and layout reJapan
North America
quirements of the HVIC and discrete power device
combination. Equally perplexing is the challenge of mainTotal Market – 25,697 k Units
Total Market – 47,834 k Units
taining consistent performance and reliability when the
characteristics of the HVIC drivers and insulated-gate bipo129 k
lar transistors (IGBTs) are not properly matched.
9,609 k
An obvious solution to these problems is to use an integrated power device that contains all the required power
semiconductors along with matched drivers in a single isolated base module. Unfortunately, most integrated devices
16,088 k
44,705 k
require relatively expensive insulated-metal substrate
Data
Based
on
FY99
(IMS) or direct-bond copper (DBC) isolated packages that
1
add considerable cost compared to transfer-molded discrete components. To meet the demanding cost and size re- Appliance market (air conditioner, refrigerator, washing
quirements of consumer appliance inverters, a unique, machine, vacuum).
completely transfer-molded intelligent power device has been develInverter
Noninverter
oped. The dual-in-line-package
intelligent-power-module (DIPWashing Machine
Refrigerator
Air Conditioner
IPM) offers the low cost of a disTotal Market – 4,300 k Units
Total Market – 7,000 k Units
≥12 ft3
crete approach with all the advanTotal Market – 2,050 k Units
1,100 k
tages of an IPM. Compared to a
350 k
1,650 k
discrete approach, these devices offer high reliability, small size, and
reduced manufacturing costs by
integrating optimally matched
power devices and HVIC drivers in
a single factory tested module.
2
27
DIP-IPM
CPU
HVIC
Level Shift
Gate Drive
UV Prot.
15 V
3
AC
Line
Motor
LVIC
Gate Drive
UV Prot.
SC Prot.
RSHUNT
3
DIP-IPM block diagram.
Fig. 3 presents a basic block diagram of the DIP-IPM
integrated features that include the power devices and custom control ICs for gate drive and protection. The key to
the DIP-IPM is the integration of HVICs to provide level
shifting and gate drive for high-side IGBTs. This results in
significant cost savings by enabling direct connection of all
six IGBT control signals to the controller. The HVIC also
provides undervoltage lockout protection to allow simplified implementation of the required floating power supplies using bootstrap techniques. With just a few external
components, the entire three-phase power stage can operate from a single 15-V control power supply. The DIP-IPM
also utilizes a custom low-voltage IC (LVIC) to provide
gate drive, short-circuit (SC) protection, and undervoltage
lockout for the low-side IGBTs.
Incorporating level shifting into the DIP-IPM reduces
high-voltage spacing requirements on the control
printed-circuit board (PCB), allowing a significant savings
in circuit-board space. The factory-verified coordination of
ICs and power chips assures high reliability. All of these features are combined in a compact, low-cost transfer-molded
package that allows miniaturization of inverter designs.
IEEE INDUSTRY APPLICATIONS MAGAZINE • JULY|AUG. 2002 • WWW.IEEE.ORG/IAS
The DIP-IPM Package
28
4
Internal view of the DIP-IPMs.
Control Pins
Power Pins
Al Bond Wire Power Chips
IGBT, FWDi
Mold Resin
HVIC
Au Bond Wire
Aluminum Block
DIP-IPMs are made using two different packages. A larger
package, designated the Original DIP-IPM, is produced
for higher power ratings. Lower power ratings are in a
smaller package, the Mini DIP-IPM. Both packages (Fig.
4) are manufactured in a similar manner.
The DIP-IPMs are fabricated using a transfer molding
process like that used for very large ICs. First, bare power
chips and the custom HVIC and LVIC die are assembled on
a lead frame. Ultrasonic bonding of large-diameter aluminum wires makes electrical connections between the power
chips and lead frame. Small-diameter gold wires are
bonded to make the signal-level connections between the
IC die and lead frame. This part of the process is the same
for both devices. Next, they are encapsulated. This is where
the two packages differ.
The cross-section of the Original DIP-IPM is shown in
Fig. 5. These larger devices are fabricated using a two-step
injection molding process. In the first step, a thin layer of
thermally conductive epoxy is formed between the lead
5
Original DIP-IPM package cross-section.
Power Pins
Al Bond Wire
Control Pins
Au Bond Wire
Power Chips
IGBT, FWDi
HVIC
Mold Resin
Mini-DIP-IPM package cross-section.
7
6
The DIP-IPMs.
Level Shift
Gate Drive
UV Prot.
Level Shift
Gate Drive
UV Prot.
V
Vcc
Gate Drive
UV Prot.
Motor
Gate Drive
W
RSHUNT
N
RSF
CSF
8
Optimum
PWM
Frequency
Typical
Motor
Ratings
220 VAC
low
750 W
PS21254-E
15 A/600 V
high
750 W
A schematic diagram including a typical external circuit
for the DIP-IPM is shown in Fig. 8. All devices contain
the six IGBT/free-wheel diode pairs required for a
three-phase motor drive. There is one LVIC for the three
low-side IGBTs that provides the gate drive and protection functions. There are three HVICs for the three
high-side IGBTs that provide gate drive, protection functions, and level shifting.
PS21245-E
20 A/600 V
low
1,500 W
PS21255-E
20 A/600 V
high
1,500 W
PS21246-E
25 A/600 V
low
2,200 W
PS20341-G
3 A/500 V
low
125 W
PS20351-G
3 A/500 V
high
125 W
Power Chip Design and Ratings
PS20342-G
5 A/600 V
low
200 W
PS20352-G
5 A/600 V
high
200 W
PS20353-G
10 A/600 V
high
400 W
Electrical Characteristics of the DIP-IPM
The input voltage for most consumer appliance and
low-end industrial applications is between 100-240 VAC.
To cover this range, IGBTs and free-wheel diodes with a
500-600 V breakdown rating were selected. The IGBT
Mini-DIP-IPM
IEEE INDUSTRY APPLICATIONS MAGAZINE • JULY|AUG. 2002 • WWW.IEEE.ORG/IAS
Overcurrent
Protection
Level Shift
Input
Condition
HVIC
HVIC
+
+
U
Input
Condition
HVIC
5-V Logic Interface to MCU
P
Input
Condition
frame and an aluminum block. The thin
VUFS
layer of epoxy and the aluminum block
VUFB
allow good heat transfer and provide electrical isolation between the power chips
VP1
and heat sink. The Original DIP’s inteUP +Vcc
grated aluminum block provides the
thermal characteristics needed for the
VUFS
higher power devices. Then, the second
VUFB
injection-molding step encapsulates the
entire lead frame assembly to achieve the
VP1
final form. The two-step molding process
VP +Vcc
allows fabrication of modules with IGBT
ratings of up to 25 A at elevated case temVWFS
peratures. This performance is comparaVWFB
ble to assemblies utilizing discrete
TO-247 style copackaged devices (i.e.,
VP1
containing both IGBT and free-wheel diWP +Vcc
ode chips).
The cross-section of the Mini
NC
DIP-IPM is shown in Fig. 6. The lead
UN
frame is formed to produce a thin, flat
VN
Input Signal
layer of thermally conductive epoxy beConditioning
WN
tween the power chips and heat sink
FO
mounting surface of the device. This thin
Fault
CFO
layer of epoxy and bent lead frame allow
Logic
CIN
good heat transfer and provide electrical
VNC
isolation. The molding process encapsuUV
VN1
lates the entire lead frame assembly to
Prot.
+
+Vcc LVIC
achieve the final form. The single step
molding process has been utilized to fab15 V
ricate modules with IGBT ratings of up
to 10 A at elevated case temperatures.
The performance is comparable to assemblies utilizing discrete TO-220 style DIP-IPM functional diagram.
copackaged devices.
Fig. 7 is a photograph of the two
DIP-IPMs in their final form. The Original DIP is pictured
TABLE 1. DIP-IPM RATINGS
on the bottom and the Mini DIP is on the top. The photograph shows their relative size compared to a U.S. quarter-dollar coin. The transfer molded DIP-IPM is less
IGBT Ratings
Type
(IC/VCES)
Number
expensive to produce than conventional hybrid modules,
because it does not require an IMS or ceramic substrate and
plastic shell housing. The transfer molding process is also
Original DIP-IPM
well suited for high-volume, automated mass production,
PS21244-E
15 A/600 V
thus substantially reducing cost.
29
Floating Supply
HVIC
(P)
D
High Voltage
Level Shifters
E
A
PIN
RQ
S
F
Gate
Drive
B
One-Shot
Pulse Logic
C
+15 V
Gate
Drive
NIN
(N)
A
B
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C
30
D
E
F
9
High-voltage level shift.
Charging
Path
chips are fabricated using a fourth-generation 1-µm planar process to achieve
high efficiency with low switching and
conduction losses. To obtain the lowest
cost in a given application, it is necessary
to maximize the power silicon utilization. To do this, the IGBT chip is further
optimized, taking advantage of the fundamental trade-off between switching
and conduction losses. For low-frequency
applications operating at pulsewidthmodulation (PWM) frequencies less than
5 kHz, the IGBT chips are optimized for
low VCE(sat) in order to minimize conduction losses. For higher frequency applications operating at PWM frequencies of
more than 10 kHz, the IGBT chips are
optimized for low switching losses.
All free-wheel diodes used in
DIP-IPMs are super fast/soft recovery
shallow diffused types. These diodes have
been carefully optimized to have soft recovery characteristics over a wide range of
currents and temperatures in order to
minimize electromagnetic/radio-frequency interference (EMI/RFI) noise.
The available ratings for DIP-IPMs are
summarized in Table I. The types shown
in the table have a rated isolation voltage
of 1,500 V. There are also 2,500-V isolation types available. The device/motor
rating coordination is based on typical requirements. More stringent overload requirements may necessitate using the next
higher rated device.
Floating Supply
V(U,V,W)
(P)
+
Collector
Current (A)
Gate
Drive
Bootstrap
Supply
Diode
Protection Level Filter
Set By RSF × CSF
=1.5-2.0 µs
(U,V,W)
Overcurrent
Trip Level
+
15 V
CIN(n)
Gate
Drive
VSC(ref)
RSHUNT
(N)
Typical IC
Waveform
0
~2 µs
Pulse Width (µs)
10
Bootstrap supply operation.
11
DIP-IPM short-circuit and overcurrent protection.
5V
+
15 V
+
VD
DIP-IPM
Vreg (6.2-V Typ.)
Controller
5.1 k
4.7 k
R
C
R
UP, VP,
WP, UN,
VN, WN
Rreg (57-k Typ.)
Gate
Drive
RIN
(1k Typ.) Vth(off)=3.0-V Typ.
Vth(on)=1.4-V Typ.
Fault Logic
FO
C
GND
12
DIP-IPM interface circuit.
13
High-Voltage Level Shift
The main feature of DIP-IPMs is the high-voltage level
shifting provided by the integrated HVIC. The built-in
level shift eliminates the need for optocouplers and allows
direct connection of all six control inputs to the central-processing unit/digital signal processor (CPU/DSP).
The omission of an isolated interface circuit results in significant savings.
The detailed operation and timing diagram for the
level shift function is shown in Fig. 9. The falling and rising edges of the p-side control signal (A) activate the one
shot pulse logic that generates turn-on pulses (B, C) for
the high-voltage level-shifting metal-oxide-semiconductor field-effect transistors (MOSFETs). Narrow on pulses
are used to minimize the power dissipation within the
HVIC. The high-voltage MOSFETs pull
the inputs to the high-side driver latch (D,
E) low to set and reset the gate drive for the
p-side IGBT (F).
14
DIP-IPM used in an air-conditioner circuit.
ode. When the n-side IGBT is off, the energy stored in the
capacitor provides power for the high-side gate drive.
Using this technique, it is possible to operate all six IGBT
gate drivers from a single 15-V supply. The bootstrap circuit is a very low-cost method of providing power for the
high-side IGBT gate drive.
Loss is Improved
By Approximately 20%
Bootstrap Supply Scheme
100
Relative Comparison
Power for the high-side gate drive is normally supplied using external bootstrap circuits (Fig. 8). The bootstrap circuit typically
consists of a low-current 600-V fast-recovery
diode with a small series resistor to limit the
peak charging current and a floating supply
reservoir capacitor.
The operation of the bootstrap supply is
outlined in Fig. 10. When the low-side
IGBT is turned on, the floating supply capacitor is charged through the bootstrap di-
80
STATIC Di
STATIC Tr
SW. OFF
SW. ON
60
40
20
0
Bipolar Tr
DIP-IPM
Loss reduction with DIP-IPM in an air-conditioning application.
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Discrete approach versus DIP-IPM.
15
31
Bipolar
Module
Base
Drive
Circuit
MultiOutput
Power
Source
Circuit
Microprocessor
Undervoltage Lockout
Configuration of Existing Circuit Board
The DIP-IPM is protected from failure of the 15-V control
power supply by a built-in undervoltage (UV) lockout circuit. If the voltage of the control supply falls below the UV
trip value, the low-side IGBTs are turned off, and a fault signal is provided. In addition, the p-side HVIC gate drive circuits have independent undervoltage lockout circuits that
turn off the IGBT to protect against failure if the voltage of
the floating power supply becomes too low. In the case of a
high-side undervoltage lockout, the affected IGBT will be
turned off, but a fault signal is not generated.
SC Protection
The DIP-IPMs have an integrated SC protection function.
The LVIC monitors the voltage across an external shunt resistor (RSHUNT) to detect excessive current in the dc link. A
resistance-capacitance (RC) filter (RSF, CSF) with a time
constant of 1.5-2 µs is normally inserted (Fig. 8). It prevents erroneous fault detection due to di/dt induced noise
on the shunt resistor and free-wheel diode recovery currents. The RC time constant produces a time-dependent
trip
level (Fig. 11). When the voltage at the CIN pin exSingle
DIP-IPM
ceeds the VSC reference level, the lower arm IGBTs are
Output
Power
turned off, and a fault signal is asserted at the FO pin. When
Source
selecting the external shunt, it is very important that the
Circuit
maximum trip current setting not exceed the short-circuit
saturation current of the IGBTs. If the shunt resistance is
too small, the short circuit may not be detected, as the
Configuration of DIP-IPM Circuit Board
16
IGBTs themselves will limit the current to a level below
the trip point. If this happens, the SC protection function is
PCB area reduction with DIP-IPM in an air-conditioning apeffectively disabled. When a short-circuit condition is deplication.
tected, the IGBTs remain off until the fault
time (tFO) has expired and the input signal has
cycled to its off state. The duration of tFO is set
Number of
by an external timing capacitor CFO. The recNumber of
Components on Circuit
Components on Existing
ommended
CFO is 22 nF, which will yield a
Board with DIP-IPM - 80
Circuit Board - 140
fault output duration of about 1.8 ms.
32
Component Count
Reduced By 40%
Interface Circuit
17
Component count reduction with DIP-IPM in an air-conditioning application.
100
Relative Comparison
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Microprocessor
Circuit Board Area
Is Reduced By 25%
80
60
40
Failure Rate Is Improved
By Approximately 40%
20
0
Bipolar Tr
DIP-IPM
18
Reliability improvement with DIP-IPM in an air-conditioning application.
The DIP-IPM has seven microprocessor-compatible input and output signals. The built-in
HVIC level shifters allow all signals to be referenced to the common ground of the 15-V control power supply. The signals are 5-V
transistor-transistor logic/complimentary
metal-oxide-semiconductor (TTL/CMOS) compatible in order to permit direct connection to a
PWM controller. The interface circuit between
the PWM controller and the DIP-IPM can be
made by either direct connections or
optocouplers, depending on the requirements of
the application.
Fig. 12 shows the internal structure of the
DIP-IPMs control signals and a simplified schematic of a typical external interface circuit. On
and off operations for all six of the DIP-IPM’s
IGBTs are controlled by the active low-control
inputs UP, VP, WP, UN, VN, and WN. Normally,
these inputs are pulled high to the 5-V logic
supply of the controller with an external 4.7-kΩ
resistor. The controller commands the respective
IGBT to turn on by pulling the input low. Approximately
1.6 V of hysteresis is provided on all control inputs to help
prevent oscillations and enhance noise immunity. The optional capacitors C and resistors R, shown dashed in the figure, can be added to further improve noise filtering.
The fault signal output FO is in an open collector configuration. Normally, the fault signal line is pulled high to
the 5-V logic supply with a 5.1-kΩ resistor (Fig. 12).
When a short-circuit condition or improper control power
supply voltage is detected, the DIP-IPM turns on the internal open collector device and pulls the fault line low.
Loss Is
Improved
By 22%
100%
80%
60%
STATIC Di
STATIC Tr
SW OFF
SW ON
40%
20%
0%
MOSFET
DIP-IPM System Advantages
DIP-IPM (PS20351)
19
Cost (in US $)
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Fig. 13 shows a comparison of the components required in
a typical three-phase motor drive using discrete Loss reduction with DIP-IPM in a refrigeration application.
copackaged IGBT devices versus the DIP-IPM. Clearly,
there are significant manufacturing advantages to the DIP-IPM approach. Each of the
Component Count of
Component Count
discrete devices must be individually
Existing Circuit Board
of Circuit Board with
mounted and isolated, which typically results
Inverter Region - 76
DIP-IPM - 48
in a very complex assembly and significant
manufacturing time. On the other hand, the
37% Reduction
DIP-IPM contains all six of the required
of Component Count
IGBT/free-wheel diode pairs and has a fully
isolated mounting surface. Mounting is accomplished with only two screws, and no ad20
ditional isolation material is required. The
reduced manufacturing time and simplified Component-count reduction with DIP-IPM in a refrigeration application.
assembly provided by the
DIP-IPM will allow improvements in both cost and reliability
of the finished system.
US$0.44
Another advantage of the
Details of Cost
DIP-IPM is that the integrated
Baseplate Cost
HVIC and LVIC gate drive and
US$0.83
protection functions are factory
Production Cost
Cost Before
tested with the IGBTs as a subsysIncorporating IPM
Materials Cost
tem. This eliminates uncertainty
about the critical coordination of
the electrical characteristics of
these components. The result is
Cost
Reduction
better, more consistent system perCost after IPM
of US$1.74
formance and reliability.
The ultra-compact DIP-IPMs
MR-M38T(Old Type)
MR-M38X(New Type)
offer many benefits for appliance
21
motor controls. Fig. 14 shows an
inverter for compressor speed con- Cost savings with DIP-IPM in a refrigeration application.
trol in a home air conditioner. In
this application, it is easy to see
how the DIP-IPM simplifies the design. This particular plementation was with discrete MOSFETs. The DIP-IPM
application was originally implemented using discrete bi- design reduced losses by 22% (Fig. 19) and reduced the
polar transistors. Examining the benefits of the DIP-IPM component count by 37% (Fig. 20). Using the DIP-IPM
approach in detail, it reduced losses by 20% (Fig. 15), brought the original equipment manufacturer (OEM) a
shrank the printed circuit board area by 25% (Fig. 16), and significant cost reduction of US$1.74 per unit (Fig. 21).
reduced the component count by 40% (Fig. 17). In addition to these benefits, which are directly measurable, the Conclusion
DIP-IPM produced an additional benefit of an improve- DIP-IPMs consisting of a combination of power devices, low
ment in reliability by reducing the failure rate by 40% voltage ICs, and high voltage ICs in a unique, low-cost,
(Fig. 18).
transfer-molded package have been developed. These deThe same types of savings were achieved in a commer- vices have been optimized to simplify and miniaturize incial refrigeration application. In this case, the existing im- verters in appliance applications. Compared to discrete
33
semiconductors, these new integrated modules offer lower
cost, improved manufacturability, and increased reliability.
References
[1] G. Majumdar, et al., “A new generation high performance intelligent module,” presented at PCIM’92 Europe.
[2] E.R. Motto, J.F. Donlon, G. Majumdar, S. Hatae, S. Ohshima, and K.
Takanashi, “A new generation of intelligent power devices for motor drive applications,” in Conf. Rec. IEEE IAS Annual Meeting,
1993, vol. 2, pp. 1332-1338.
[3] E. Motto, “Protecting high current IGBT modules from over current and short circuits,” in Proc. PCIM’95, San Jose, CA, vol. 10, pp.
445-451.
[4] J. Donlon, E. Motto, G. Majumdar, S. Mori, W. Taylor, and R. Xu,
“A new converter/inverter system for windpower generation
utilizing a new 600 amp, 1200 volt intelligent IGBT power module,” in Conf. Rec. IEEE IAS Annual Meeting, 1994, vol. 2, pp.
1031-1042.
IEEE INDUSTRY APPLICATIONS MAGAZINE • JULY|AUG. 2002 • WWW.IEEE.ORG/IAS
[5] E.R. Motto, J.F. Donlon, G. Majumdar, and S. Hatae, “A new intelligent power module with microprocessor compatible analog cur-
34
rent feedback, control input, and status output signals,” in Conf.
Rec. IEEE IAS Annual Meeting, 1996, vol. 3, pp. 1287-1291.
[6] E. Motto, “A new ultracompact ASIPM with integrated HVASIC,”
in Proc. PCIM’97, Baltimore, MD, vol. 36.
[7] G. Majumdar, K.H. Hussein, M. Iwasaki, H. Kawafuji, T. Iwagami,
and H. Yoshida, “Novel intelligent power modules for low-power
inverters,” in Proc. 1998 IEEE Power Electronics Specialists Conf.,
vol. 2, 1173-1179.
[8] S. Noda, S. Yamada, G. Majumdar, and T. Yamada, “A novel super
compact intelligent power module,” in Proc. 1997 PCIM Europe,
Nurnberg, Germany, Power Conversion vol., pp. 1-10.
[9] E.R. Motto, “Application specific intelligent power modules—A
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PCIM’98, Santa Clara, CA, vol. 37, pp. 115-129.
John Donlon (jdonlon@pwrx.com) and Joanne Achhammer are
with Powerex Incorporated in Youngwood, Pennsylvania, USA.
Hideo Iwamoto and Mitsutaka Iwasaki are with Mitsubishi
Electric Corporation in Fukuoka, Japan. This paper first appeared in its original format at the 2001 IEEE International
Appliance Technical Conference.