ISSN: 2277 – 9043
International Journal of Advanced Research in Computer Science and Electronics Engineering
(IJARCSEE)
Volume 4, Issue 1, January 2015
Optical Signal Processing Through Efficient
Electro Optic Modulators in Advanced Optical
Communication Networks Under Thermo-optic
Effects
1,2,3
Ahmed Nabih Zaki Rashed1*, Abd El-Naser A. Mohammed2
and Fatma Mohammed Aref Mahmoud Houssien3
Electronics and Electrical Communications Engineering Department
Faculty of Electronic Engineering, Menouf 32951, Menoufia University, EGYPT
*
E-mail: ahmed_733@yahoo.com
Abstract— Semiconductor optical modulator devices plays an
important role in several rapidly developing areas of broadband
communications, such as optical networking, metropolitan/access
communications and computing systems due to their easier
processibility and integration over inorganic counterparts.
Optical telecommunication systems at high data rate require
external modulation. An electro-optic modulator (EOM) is used
for modulating the intensity of the laser beam according to the
logical levels of the digital data. This paper has presented the
important transmission characteristics, operation efficiency, and
modulation speed performance design parameters of different
electro-optic polymer modulators. The switching voltage, figure
of merit, extinction ratio, modulation, transit time, modulator
performance speed, and DC half wavelength length product are
the major important design parameters of our interesting. As well
as we have investigated semiconductor electro-optic modulators
such as silicon (Si), gallium arsenide (GaAs), and indium
phosphoide (InP) under thermo-optic effects over wide range of
the affecting parameters for integrated photonics applications.
Optical interconnect technology is expected as a key solution to
solving major performance limitations in high performance
computing caused by bus bandwidth bottleneck, latency and
power consumption issues. Our results are validated against
published experimental work and showed good agreement and
enhancement.
Index Terms— Integrated photonics, Thermo-Optic, Broadband
communications, and Mach-Zehnder (MZ) modulator.
I. INTRODUCTION
Over the past few years, the demands for high
performance computers, ever increasing instructions per
cycle and high energy efficiency, have fuelled the rapid
development of multicore and many core microprocessors.
With the recent advent of quad core processors into the
market [1], coupled with the laboratory demonstration of a
teraflop processor containing 80 cores, the need for
interconnects
supporting
gigascale
and
terascale
input/output has become imperative. Although present
implementations of chip to chip copper interconnects are
being pushed to deliver gigascale bandwidths with the
design of transceivers that use active or passive equalizers,
this is unlikely to be a frequency scalable option. On a
parallel front, optical technology has been successfully
deployed in long haul fiber communications for more than
two decades now. Individual components targeted toward
these applications have been developed to the extent of
delivering bandwidths as large as 40 Gb/s. Multiple
channels of such high bandwidth transmitted together using
wavelength division multiplexing (WDM) is capable of
terascale data rates [2].
It would therefore seem intuitive to extensively employ
similar optical technology in short reach applications such
as rack to rack and board to board communications.
However, this approach has not gathered momentum and the
primary reason has been the high costs of materials such as
III-V semiconductors and lithium niobate, which are
inherently suited for photonic applications. Thus,
developing a cost-effective optical technology has become
essential for its adoption in the computer industry. Interest
in silicon photonics has been spurred predominantly by the
low cost of silicon. In addition, its high volume
manufacturability and the potential of electronics and
photonics integration in the all pervasive microelectronics
applications have added a further boost to this field. Silicon
photonics is now being enabled by the successful
demonstration of the requisite building blocks on silicon
such as fast silicon optical modulators [3], SiGe
photodetectors [4], silicon Raman lasers [5], silicon optical
amplifiers [6], silicon wavelength converters [7], and hybrid
silicon lasers. A high speed silicon photonic transceiver
circuit which monolithically integrates all of these
functionalities would be the ultimate culmination point
expected to provide a low-cost solution for future optical
interconnects. Silicon optical modulators are one of the key
building blocks which have been extensively studied. Highspeed data transmission at 10 Gb/s [8], 30 Gb/s [9], and 40
Gb/s [10] has been demonstrated using silicon modulators
with different device configurations. Combining these
gigascale silicon modulators with recently developed hybrid
silicon lasers [11] and using WDM, one could create a
single chip that can transmit data at Tb/s data rate for future
high performance computing applications and mega data
centers.
II. SIMPLE OPTICAL COMMUNICATION LINK WITH MZ
MODULATOR
A simple optical communications link consists of a
source, a means to modulate the source, a transmission
medium and a receiver. A block diagram of such a link is
shown in Fig. 1. Optical networks are far more complex and
consist of many different links joined together by switches,
multiplexers, demultiplexers, and various types of signal
amplifiers for networks transmitting over hundreds of
kilometers [10, 11].
8
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ISSN: 2277 – 9043
International Journal of Advanced Research in Computer Science and Electronics Engineering
(IJARCSEE)
Volume 4, Issue 1, January 2015
n  ne 
dne
T
dT
(1)
Where dne/dT is the thermo-optic coefficient, ΔT=(T-T0) is
the difference between ambient temperature (T), and room
temperature (T0), and ne is the effective refractive index of
the material based thermal EO intensity modulator is given
by the following formula:
ne 
Fig. 1. Schematic view of optical communication link with
MZ modulator.
A1 2
 2  A22
A3  2

 2  A42
A5  2

 2  A62
(2)
,
A2
A
A 

AA
A3 A4 4
A5 A6 6 
dne  2   1 2 T

T
T  (3)
 



2
2
2
dT  ne   2
2
2
2
2

   A2
  A4
  A62 


 

It can be readily seen that optical modulators are a key
component in an optical communications link. There are
several commercially techniques to modulate a laser source:
direct laser modulation, and electro-optic modulator with
electrode modulation length L, and spacing between
electrodes d are all currently commercially available. Each
type of modulation has unique benefits and limitations [12].
 

The set of parameters of empirical equation coefficients for
different polymeric materials based EO intensity modulators
are recast and dimensionally as listed in Table 1 as a
function of ambient temperature T, and room temperature
T0. The set of different polymeric materials based EO
modulators and their electro-optic and absorption
coefficients at third optical transmission window (at λ=1.55
μm)are listed in Table 1 [17, 18].
III. MATHEMATICAL MODEL ANALYSIS
The thermo-optic effect is present in all transparent
materials and describes the dependence of the material index
of refraction on temperature. Mathematically, this can be
expressed in the following form [13-16]:
Table 1: Electro-optic and absorption coefficients for semiconductor materials at 3rd optical transmission window [12, 17, 19, 22].
Coefficients
A1
Silicon (Si)
1.0668429 (T/T0)
Materials based EO modulators
Gallium Arsenide (GaAs)
4.08765 (T/T0)
Indium Phosphide (InP)
1.2876532 (T/T0)
A2
0.301516485 (T/T0)2
0.2088764 (T/T0)2
0.1197543 (T/T0)2
A3
0.0030434748 (T/T0)
0.7432544 (T/T0)
0.77432987 (T/T0)
2
0.36541232 (T/T0)2
2
A4
1.13475115 (T/T0)
0.3956432 (T/T0)
A5
1.5413308 (T/T0)
0.9887654 (T/T0)
2.9876521 (T/T0)
2
153.75232 (T/T0)2
A6
1104 (T/T0)
Electro-optic coefficient (r41)
Material absorption coefficient (α)
2
15 Pm/volt
0.1 dB/cm
The thermo-optic effect in silicon is large and as such can be
used to impart large variations in refractive index with
modest increases in material temperature. When such a
change occurs uniformly over a finite length, L, then the
change in optical phase relative to unperturbed propagation
is given by [19, 20]:
2 L T dn
,
(4)
 

dT
Where L is the length of the modulation electrode and T is
the temperature rise over this length. When this phase term
is applied to a symmetrical two beam, the resulting
modulated output current as a function of bias current is
given by:
I0 
500 I bias
1  cos 
(5)
Based on MATLAB curve fitting program, the fitting
relation between bias current (Ibias) in mA and applied bias
voltage (Vbias) in Volts can be given by [21]:
2
I bias  0.546  0.743Vbias  0.0564Vbias
(6)
Where Vπ is the voltage required to change the output light
intensity from its maximum value to its minimum value can
be:
27.654387 (T/T0)
1.43 Pm/Volt
0.5 dB/cm
V 
5.8 Pm/Volt
3 dB/cm
d
2  n 3 r41 L
(7)
,
Where d is the distance between the top and the bottom
electrodes, L is the length of the modulation electrode, λ is
the operating optical signal wavelength, r41 is the electrooptic coefficient, and Г is confinement factor, and is defined
as the overlap integration of the modulating electrical field
and the optical mode. The change in effective refractive
index for the transverse magnetic polarization is [22]:
n 
0.5 Vbias n 3 r41
L
,
(8)
The thermal sensitivity of EOM under thermo-optic effect
can be given by [23]:
SM 
T dn
-1
,K
n dT
(9)
In order to assess the suitability and the critical design issues
of commercial optical intensity modulators for applications
in photonic sub systems of future communications,
performances of modulators, based on the different
technologies previously described [24, 25], have been first
compared using information gathered from datasheets and
using features, such as the optical power handling capability
and the following figure of merit (FoM):
9
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International Journal of Advanced Research in Computer Science and Electronics Engineering
(IJARCSEE)
Volume 4, Issue 1, January 2015
 10  0.1
FoM  
 V


 ,


(10)
Where α is the material absorption coefficient, and Vπ is the
switching voltage for 100% modulation at the operating
frequency. This figure of merit expresses the amount of
modulated optical power that can be made available at the
output of a modulator, for a certain amount of radio
frequency drive power [26]. Therefore, the higher the FoM,
the higher the gain and the better. Also based on MATLAB
curve fitting program, the fitting relations between the
extinction ratio (ER), modulation efficiency (ηm) against Vπ
can be given by:
ER  20 V  0.19349 V2 ,
(11)
2
(12)
m  46.4  4.163 V  0.8182 V ,
Where the root mean square errors for the previous fitting
equations are 0.00598%, 0.003785% respectively. The
transit time of EO polymeric modulators is given by [27]:
L
(13)
d 
, nsec
nc
To obtain a high modulation speed, the transit time should
be as small as possible. The 3-dB bandwidth which is a
guide of device operation efficiency can be expressed as
[23, 27, 28]:
2 n c
, GHz
(14)
f 3dB 
 L
The transmission modulation bit rate length product can be
described by [22]:
(15)
PR  B Rm L , Gbit.cm/sec
Where the modulation bit rate with non return to zero
coding can be expressed by the following expression [29]:
0.7
Gbit/sec
(16)
B Rm 
d
IV. SIMULATION RESULTS AND PERFORMANCE EVALUATION
We have investigated the development of different
semiconductor electro-optic modulators for high speed
performance operation in optical communication networks
over wide range of the affecting operating parameters as
shown in Table 2.
Table 2: Proposed operating parameters for different
semiconductor EOMs [3, 5, 7, 12, 15].
Operating parameter
Symbol
Operating signal wavelength
λ
1.55 μm
Value
Electrode modulator length
L
1 ≤ L, cm ≤ 2
Distance between electrodes
d
10 ≤ d, µm ≤ 50
Bias voltage
Vbias
1 ≤ Vbiass, Volt ≤ 10
Confinement factor
Г
0.9
Room temperature
T0
300 K
Ambient temperature
T
300 K-350 K
Based on the modeling equations analysis over wide range
of the operating parameters, and the series of the Figs. (226), the following features are assured:
i) Figs. (2-4) have indicated that modulated output current
increases for different electro-optic modulators under
study with increasing both ambient temperature
variations and applied bias voltage. It is found that
silicon electro-optic modulator has presented the
highest modulated output current in compared with
other modulators.
ii)As shown in Figs. (5-7) have demonstrated that
switching voltage increases with increasing distance
between electrodes for different electro-optic
modulators under study. As well as it is evident that
silicon electro-optic modulator has presented the lowest
switching voltage in compared with other modulators.
iii)
Figs. (8-10) have indicated that modulator thermal
sensitivity increases with increasing ambient
temperature variations for different electro-optic
modulators under study. As well as it is indicated that
indium phosphide electro-optic modulator has presented
the lowest thermal sensitivity in compared with other
modulators.
iv)
Figs. (11-13) have assured that figure of merit
increases for different electro-optic modulators under
study with increasing electrode modulator length and
decreasing ambient temperature variations. As well as it
is evident that silicon electro-optic modulator has
presented the highest figure of merit in compared with
other modulators.
v) As shown in Figs. (14-19) have indicated that extinction
ratio and modulation efficiency increase for different
electro-optic modulators under study with increasing
distance between electrodes. Moreover it is theoretically
found that silicon electro-optic modulator has presented
the highest both extinction ratio and modulation
efficiency in compared with other modulators.
10
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70
T=350 K
Modulated output current, IO, mA
60
T=325 K
50
T=300 K
40
30
20
10
0
1
2
3
4
5
6
7
8
9
10
Bias voltage, Vbias, Volt
Fig. 2. Variations of modulated output current for silicon modulator against variations of bias voltage and ambient
temperature at the assumed set of the operating parameters.
60
Modulated output current, IO, mA
T=350 K
50
T=325 K
T=300 K
40
30
20
10
0
1
2
3
4
5
6
7
8
9
10
Bias voltage, Vbias, Volt
Fig. 3. Variations of modulated output current for gallium arsenide modulator against variations of bias voltage and ambient
temperature at the assumed set of the operating parameters.
Modulated output current, IO, mA
45
40
T=350 K
35
T=325 K
30
T=300 K
25
20
15
10
5
0
1
2
3
4
5
6
7
8
9
10
Bias voltage, Vbias, Volt
Fig. 4. Variations of modulated output current for indium phosphide modulator against variations of bias voltage and
ambient temperature at the assumed set of the operating parameters.
11
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1.4
Experimental [18]
Switching voltage, Vπ, Volt
1.2
Theoretical model
1
0.8
0.6
0.4
0.2
10
15
20
25
30
35
40
45
50
Distance between electrodes, d, μm
Fig. 5. Switching voltage in relation to distance between electrodes with electrode modulator length (L=1.5 cm) for silicon
modulator at the assumed set of the operating parameters.
14
Switching voltage, Vπ, Volt
Experimental [27]
12
Theoretical model
10
8
6
4
2
10
15
20
25
30
35
40
45
50
Distance between electrodes, d, μm
Fig. 6. Switching voltage in relation to distance between electrodes with electrode modulator length (L=1.5 cm) for gallium
arsenide modulator at the assumed set of the operating parameters.
3.5
Switching voltage, Vπ, Volt
Experimental [22]
3
Theoretical model
2.5
2
1.5
1
0.5
10
15
20
25
30
35
40
45
50
Distance between electrodes, d, μm
Fig. 7. Switching voltage in relation to distance between electrodes with electrode modulator length (L=1.5 cm) for indium
phosphide modulator at the assumed set of the operating parameters.
12
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2
Experimental [18]
Thermal sensitivity, SM, K-1
1.8
Theoretical model
1.6
1.4
1.2
1
0.8
0.6
0.4
300
305
310
315
320
325
330
335
340
345
350
Ambient temperature, T, K
Fig. 8. Variations of silicon modulator thermal sensitivity against variations of ambient temperature at the assumed set of the
operating parameters.
3
Thermal sensitivity, SM, K-1
Experimental [27]
2.5
Theoretical model
2
1.5
1
0.5
300
305
310
315
320
325
330
335
340
345
350
Ambient temperature, T, K
Fig. 9. Variations of gallium arsenide modulator thermal sensitivity against variations of ambient temperature at the assumed
set of the operating parameters.
1.2
Experimental [22]
Thermal sensitivity, SM, K-1
1
Theoretical model
0.8
0.6
0.4
0.2
0
300
305
310
315
320
325
330
335
340
345
350
Ambient temperature, T, K
Fig. 10. Variations of indium phosphide modulator thermal sensitivity against variations of ambient temperature at the
assumed set of the operating parameters.
13
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Figure of merit, FoM, V-1.cm-1
0.9
0.8
T=300 K
0.7
T=325 K
T=350 K
0.6
0.5
0.4
0.3
0.2
0.1
0
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
Electrode modulator length, L, cm
Fig. 11. Figure of merit of silicon modulator in relation to electrode modulator length and ambient temperatures at the
assumed set of the operating parameters.
0.6
Figure of merit, FoM, V-1.cm-1
T=300 K
0.5
T=325 K
T=350 K
0.4
0.3
0.2
0.1
0
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
Electrode modulator length, L, cm
Fig. 12. Figure of merit of gallium arsenide modulator in relation to electrode modulator length and ambient temperatures at
the assumed set of the operating parameters.
0.45
T=300 K
Figure of merit, FoM, V-1.cm-1
0.4
T=325 K
0.35
T=350 K
0.3
0.25
0.2
0.15
0.1
0.05
0
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
Electrode modulator length, L, cm
Fig. 13. Figure of merit of indium phosphide modulator in relation to electrode modulator length and ambient temperatures
at the assumed set of the operating parameters.
14
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20
19
Experimental [18]
Extinction ratio, ER, dB
18
Theoretical model
17
16
15
14
13
12
11
10
9
10
15
20
25
30
35
40
45
50
Distance between electrodes, d, μm
Fig. 14. Extinction ratio in relation to distance between electrodes with electrode modulator length (L=1.5 cm) for silicon
modulator at the assumed set of the operating parameters.
Extinction ratio, ER, dB
16
15
Experimental [27]
14
Theoretical model
13
12
11
10
9
8
7
6
10
15
20
25
30
35
40
45
50
Distance between electrodes, d, μm
Fig. 15. Extinction ratio in relation to distance between electrodes with electrode modulator length (L=1.5 cm) for gallium
arsenide modulator at the assumed set of the operating parameters.
13
Experimental [22]
12
Theoretical model
Extinction ratio, ER, dB
11
10
9
8
7
6
5
4
10
15
20
25
30
35
40
45
50
Distance between electrodes, d, μm
Fig. 16. Extinction ratio in relation to distance between electrodes with electrode modulator length (L=1.5 cm) for indium
phosphide modulator at the assumed set of the operating parameters.
15
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72.5
Experimental [18]
Modulation efficiency, ηm, %
70
Theoretical model
67.5
65
62.5
60
57.5
55
10
15
20
25
30
35
40
45
50
Distance between electrodes, d, μm
Fig. 17. Modulation efficiency in relation to distance between electrodes with electrode modulator length (L=1.5 cm) for
silicon modulator at the assumed set of the operating parameters.
65
Experimental [27]
Modulation efficiency, ηm, %
62.5
Theoretical model
60
57.5
55
52.5
50
47.5
45
10
15
20
25
30
35
40
45
50
Distance between electrodes, d, μm
Fig. 18. Modulation efficiency in relation to distance between electrodes with electrode modulator length (L=1.5 cm) for
gallium arsenide modulator at the assumed set of the operating parameters.
Modulation efficiency, ηm, %
57.5
55
Experimental [22]
52.5
Theoretical model
50
47.5
45
42.5
40
37.5
35
10
15
20
25
30
35
40
45
50
Distance between electrodes, d, μm
Fig. 19. Modulation efficiency in relation to distance between electrodes with electrode modulator length (L=1.5 cm) for
indium phosphide modulator at the assumed set of the operating parameters.
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30
Si based EOM
Transient time, τd, nsec
25
GaAs based EOM
InP based EOM
20
15
10
5
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
Electrode modulator length, L, cm
Fig. 20. Variations of transient time for different elect-optic modulators under study versus electrode modulator length with
room temperature (T0=300 K) at the assumed set of the operating parameters.
40
Si based EOM
35
Transient time, τd, nsec
GaAs based EOM
30
InP based EOM
25
20
15
10
5
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
Electrode modulator length, L, cm
Fig. 21. Variations of transient time for different elect-optic modulators under study versus electrode modulator length with
ambient temperature (T=325 K) at the assumed set of the operating parameters.
50
Si based EOM
Transient time, τd, nsec
45
GaAs based EOM
40
InP based EOM
35
30
25
20
15
10
5
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
Electrode modulator length, L, cm
Fig. 22. Variations of transient time for different elect-optic modulators under study versus electrode modulator length with
ambient temperature (T=350 K) at the assumed set of the operating parameters.
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3-dB bandwidth or modulation
speed, f3-dB, GHz
50
45
Si based EOM
40
GaAs based EOM
InP based EOM
35
30
25
20
15
10
5
0
1
2
3
4
5
6
7
8
9
10
Bias voltage, Vbias, Volt
Fig. 23. Variations of modulation speed for different elect-optic modulators under study versus bias voltage with room
temperature (T0=300 K) at the assumed set of the operating parameters.
35
3-dB bandwidth or modulation
speed, f3-dB, GHz
Si based EOM
30
GaAs based EOM
InP based EOM
25
20
15
10
5
0
1
2
3
4
5
6
7
8
9
10
Bias voltage, Vbias, Volt
Fig. 24. Variations of modulation speed for different elect-optic modulators under study versus bias voltage with ambient
temperature (T=325 K) at the assumed set of the operating parameters.
30
3-dB bandwidth or modulation
speed, f3-dB, GHz
Si based EOM
25
GaAs based EOM
InP based EOM
20
15
10
5
0
1
2
3
4
5
6
7
8
9
10
Bias voltage, Vbias, Volt
Fig. 25. Variations of modulation speed for different elect-optic modulators under study versus bias voltage with ambient
temperature (T=350 K) at the assumed set of the operating parameters.
18
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International Journal of Advanced Research in Computer Science and Electronics Engineering
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75
Si based EOM
Modulation bit rate length
product, PR, Gbit.cm/sec
65
GaAs based EOM
InP based EOM
55
45
35
25
15
5
300
305
310
315
320
325
330
335
340
345
350
Ambient temperature, T, K
Fig. 26. Modulation bit rate length product for different electro-optic modulators in relation to ambient temperature
variations at the assumed set of the operating parameters.
vi) Figs. (20-22) have assured that modulator transient
time increases with increasing both electrode modulator
length and ambient temperature variations for different
electro-optic modulators under study. As well as it is
evident that silicon electro-optic modulator has
presented the lowest transient time in compared with
other modulators.
vii) As shown in Figs. (23-25) have demonstrated that
modulation operation speed increases with increasing
applied bias voltage and decreasing ambient
temperature variations for different electro-optic
modulators under study. As well as it is indicated that
silicon electro-optic modulator has presented the
highest modulation operation speed in compared with
other modulators.
viii) Fig. 26 has assured that modulation bit rate length
product decreases with increasing ambient temperature
variations for different electro-optic modulators under
study. It is observed that silicon electro-optic modulator
has presented the highest modulation bit rate length
product in compared with other modulators under the
same operation conditions.
V. CONCLUSIONS
Optical interconnect technology is expected as a key
solution to solving major performance limitations in high
performance computing caused by bus bandwidth
bottleneck, latency and power consumption issues. A critical
component in an optical interconnect is a high speed optical
modulator with low power/energy consumption and a small
footprint. While electro-optic modulators have been
developed with speed up to multi GHz. It is theoretically
found that silicon electro-optic modulators has presented the
highest modulated output current, modulation speed, figure
of merit modulation bit rate length product and the lowest
transient time, switching voltage with medium stable
thermal stability in compared with other modulators under
study within the same operating conditions. as well as it is
evident the dramatic effects of ambient temperatures
variations on the performance of all different electro-optic
modulators.
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All Rights Reserved © 2015 IJARCSEE
ISSN: 2277 – 9043
International Journal of Advanced Research in Computer Science and Electronics Engineering
(IJARCSEE)
Volume 4, Issue 1, January 2015
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Authors Profile
Dr. Ahmed Nabih Zaki Rashed was
born in Menouf city, Menoufia State, Egypt
country in 23 July, 1976. Received the B.Sc.,
M.Sc., and Ph.D. scientific degrees in the
Electronics and Electrical Communications
Engineering Department from Faculty of
Electronic Engineering, Menoufia University
in May 1999, July 2005, and 28 February 2010
respectively. Currently, his job carrier is a
scientific lecturer in Electronics and Electrical
Communications Engineering Department,
Faculty of Electronic Engineering, Menoufia
university, Menouf 32951.
His scientific master science thesis has focused on polymer fibers
in optical access communication systems. Moreover his scientific
Ph. D. thesis has focused on recent applications in linear or
nonlinear passive or active in optical networks. His interesting
research mainly focuses on transmission capacity, a data rate
product and long transmission distances of passive and active
optical communication networks, wireless communication, radio
over fiber communication systems, and optical network security
and management. He has published many high scientific research
papers in high quality and technical international journals in the
field of advanced communication systems, optoelectronic devices,
and passive optical access communication networks. His areas of
interest and experience in optical communication systems,
advanced optical communication networks, wireless optical access
networks, analog communication systems, optical filters and
Sensors. As well as he is editorial board member in high academic
20
All Rights Reserved © 2015 IJARCSEE
ISSN: 2277 – 9043
International Journal of Advanced Research in Computer Science and Electronics Engineering
(IJARCSEE)
Volume 4, Issue 1, January 2015
scientific International research Journals. Moreover he is a
reviewer member in high impact scientific research international
journals in the field of electronics, electrical communication
systems, optoelectronics, information technology and advanced
optical communication systems and networks. His personal
electronic mail ID (E-mail:ahmed_733@yahoo.com). He has
supervised four PhD students and three MSc. students successfully
and four Ph. D students and Seven MSc. students are currently
pursuing their research under guidance. His published paper under
the title "High reliability optical interconnections for short
range applications in high performance optical communication
systems" in Optics and Laser Technology, Elsevier Publisher has
achieved most popular download articles in 2013.
Eng. Fatma Mohammed Aref
Mahmoud Houssien was born in
cairo city, Egypt in 5 April 1979.
Received the B.Sc., and M.Sc.
scientific degrees in the Electronics
and Communications Engineering
Department
from
Faculty
of
Engineering, Zagazig University in
2000, and 2012 respectively.
Currently, she is an electronics and
communications engineer on the
Operation and Maintenance of the
Transmission Sector for the Middle
and East Delta in Telecom Egypt. She is over ten years working in
Transmission Sector for the Middle and East Delta in Telecom
Egypt and contributed in many projects during execution,
operation, and maintenance for Alcatel-Lucent, Nortel Networks,
Siemens Products, Cisco Networks and ZTE Switches. She has
spent two weeks in training course under the DWDM Optical
Devices from Alcatel-Lucent University, France. Her scientific
master science thesis has focused on Local Area Optical
Communication Networks especially via utilizing Polymer Optical
Fibers. She is currently pursuing the Ph.D. degree in transmission
schemes, structures of optical laser diode sources and
photodetectors, channel modeling in optical communication
networks, optoelectronic devices and the field of advanced optical
communication systems at Electronics and Electrical
Communications Engineering Department, Faculty of Electronic
Engineering, Menoufia University, Menouf city, Menoufia state,
Egypt. Her interesting research mainly focuses on data rate product
for short and long transmission distances of optical communication
networks, optoelectronic devices and advanced optical
communication systems. Her interests are in advanced optical
communication networks, radio over optical fiber communication
systems, DWDM optical networks, wireless optical access
networks, optical filters and sensors, optical network security and
management, optoelectronic devices, network management
systems, network security, encryption and optical access
computing systems, digital communications systems, wireless
communications, nanotechnology, satellite communications,
information technology, ATM networks, mobile networks
(GSM,GPRS,CDMA networks, UMTS, WI-MAX), digital signal
processing (DSP), Fuzzy and neural networks.
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